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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Current | Forward Current | Forward Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DLA40IM800PC-TRL | IXYS | $4.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dla40im800pctrl-datasheets-4253.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 185W | 800V | 10μA | Standard | 275A | 1 | 40A | 10pF @ 400V 1MHz | 800V | 10μA @ 800V | 1.3V @ 40A | 40A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA10P1600UZ-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75W | 1600V | 5μA | TO-252AA | Standard | 92A | 1 | 10A | 1pF @ 400V 1MHz | 1600V | 5μA @ 1600V | 1.55V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA10IM1600UZ-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1600V | 10μA | TO-252AA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1600V | 10μA @ 1600V | 1.26V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS10-01AS-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-dss1001astrl-datasheets-3905.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | TO-263AB | 840mV | Fast Recovery =< 500ns, > 200mA (Io) | 300μA | 100V | Schottky | 100V | 10A | 100V | 300μA @ 100V | 840mV @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30IM300PC-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | AVALANCHE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 175W | 300V | 1μA | 35ns | Standard | 360A | 1 | 30A | 42pF @ 150V 1MHz | 300V | 1μA @ 300V | 1.35V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30I600PM | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | AVALANCHE | TO-220-2 Full Pack, Isolated Tab | 2 | 28 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE | IEC-60747 | NO | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 165W | 600V | 250μA | TO-220AC | 25ns | Standard | 250A | 1 | 26pF @ 400V 1MHz | 600V | 250μA @ 600V | 2.52V @ 30A | 15A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPF30I600AHA | IXYS |
Min: 1 Mult: 1 |
download | Tube | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA50P1200HB | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | TO-247-3 | 3 | 20 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | 8541.10.00.80 | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSFM-T3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 330W | 1200V | 40μA | TO-247AD | Standard | 595A | 1 | 50A | 19pF @ 400V 1MHz | 1200V | 40μA @ 1200V | 1.3V @ 50A | 50A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W4693QK080 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | WD2 | Standard Recovery >500ns, > 200mA (Io) | 15.5μs | Standard | 800V | 50mA @ 800V | 1.05V @ 3000A | 4693A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1022LC120 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W4 | Standard Recovery >500ns, > 200mA (Io) | 3μs | Standard | 1200V | 100mA @ 1200V | 1.85V @ 2050A | 1022A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA17-16A | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | Not Applicable | 180°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsa1716a-datasheets-9402.pdf | 1.6kV | 40A | DO-203AA, DO-4, Stud | 31.32mm | 11mm | Lead Free | 12 Weeks | No SVHC | 2 | Reverse | Single | DO-203AA | 40A | 25A | 1.36V | 370A | Standard Recovery >500ns, > 200mA (Io) | 400A | 4mA | 1.6kV | 400A | 1.6kV | Avalanche | 1.6kV | 25A | 1600V | 4mA @ 1600V | 1.36V @ 55A | 25A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2505MC250 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | 7.6μs | Standard | 2500V | 991mV @ 2000A | 2505A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W0944WC150 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | 190°C | -40°C | ROHS3 Compliant | 2004 | 42mm | DO-200AB, B-PUK | 14.4mm | 8 Weeks | 2 | Single | W1 | 945A | Standard Recovery >500ns, > 200mA (Io) | 9kA | 15mA | 1.5kV | Standard | 1500V | 15mA @ 1500V | 1.45V @ 1930A | 944A | -40°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W1730JK240 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 2400V | 30mA @ 2400V | 1.2V @ 1000A | 1730A | -40°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DCG10P1200HR | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | TO-247-3 | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 755pF @ 0V 1MHz | 1200V | 250μA @ 1200V | 1.8V @ 10A | 12.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSAI75-12B | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsai7516b-datasheets-8519.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.17V | 1.4kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 6mA | 1.5kA | 1.2kV | Avalanche | 1.2kV | 110A | 1400A | 1 | 1200V | 6mA @ 1200V | 1.17V @ 150A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS20-025AS | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-dgsk40025as-datasheets-7941.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 30A | 2mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | 48W | Schottky | 250V | 18A | 1 | 0.014μs | 2mA @ 250V | 1.5V @ 7.5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP75-06AR | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | ISOPLUS247™ | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | ISOLATED | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100mA | 35 ns | Standard | 600V | 75A | 1000A | 1 | 1mA @ 600V | 2.02V @ 75A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS20-018AS-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/ixys-dgsk40018a-datasheets-7890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 180V | 2mA @ 180V | 1V @ 7.5A | 23A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH48P20P | IXYS | $1.13 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth48p20p-datasheets-1938.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 462W Tc | TO-247AD | 144A | 0.085Ohm | 2500 mJ | P-Channel | 5400pF @ 25V | 85m Ω @ 500mA, 10V | 4.5V @ 250μA | 48A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKN75N60C | IXYS | $21.98 |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkn75n60c-datasheets-2217.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 36MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 3 | 560W | 1 | FET General Purpose Power | 30ns | 10 ns | 110 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 560W Tc | 250A | 600V | N-Channel | 36m Ω @ 50A, 10V | 3.9V @ 5mA | 75A Tc | 500nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFY36N20X3 | IXYS | $3.09 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy36n20x3-datasheets-3750.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 19 Weeks | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 176W Tc | TO-252AA | 36A | 50A | 0.045Ohm | 300 mJ | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP160N10T | IXYS | $4.46 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp160n10t-datasheets-3929.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3 | Single | 430W | 1 | FET General Purpose Powers | R-PSFM-T3 | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-220AB | 430A | 0.007Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL38N100Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl38n100q2-datasheets-4910.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | Lead Free | 3 | 8 Weeks | 264 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 380W | 1 | FET General Purpose Power | R-PSIP-T3 | 25 ns | 28ns | 15 ns | 57 ns | 29A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 380W Tc | 0.28Ohm | 5000 mJ | 1kV | N-Channel | 13500pF @ 25V | 280m Ω @ 19A, 10V | 5.5V @ 8mA | 29A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK120N30P3 | IXYS | $15.07 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk120n30p3-datasheets-1840.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 30 Weeks | 3 | Single | 26 ns | 60 ns | 120A | 20V | 300V | 1130W Tc | N-Channel | 8630pF @ 25V | 27m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT220N20X3HV | IXYS | $17.14 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH340N075T2 | IXYS | $8.86 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh340n075t2-datasheets-2443.pdf | TO-247-3 | Lead Free | 30 Weeks | 935W | 1 | TO-247AD (IXFH) | 19nF | 340A | 20V | 75V | 935W Tc | N-Channel | 19000pF @ 25V | 3.2mOhm @ 100A, 10V | 4V @ 3mA | 340A Tc | 300nC @ 10V | 3.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA3N120 | IXYS | $17.02 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n120-datasheets-5453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 200W | 1 | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 200W Tc | 3A | 700 mJ | 1.2kV | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT170N10P | IXYS | $17.20 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtt170n10p-datasheets-5567.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 715W Tc | 350A | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH32N100X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft32n100xhv-datasheets-5642.pdf | TO-247-3 | 19 Weeks | 1000V | 890W Tc | N-Channel | 4075pF @ 25V | 220m Ω @ 16A, 10V | 6V @ 4mA | 32A Tc | 130nC @ 10V | 10V | ±30V |
