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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Current | Forward Current | Forward Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Input | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| W2899MC480 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | W54 | Standard Recovery >500ns, > 200mA (Io) | 48μs | Standard | 4800V | 50mA @ 4800V | 2.9V @ 8600A | 2899A | -40°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1104NC450 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | W5 | Standard Recovery >500ns, > 200mA (Io) | 6μs | Standard | 4500V | 50mA @ 4500V | 2.2V @ 1500A | 1104A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W6262ZC200 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AE | 8 Weeks | W7 | Standard Recovery >500ns, > 200mA (Io) | Standard | 2000V | 150mA @ 2000V | 1.18V @ 6800A | 6262A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSI35-12A | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 180°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsi3512a-datasheets-3149.pdf | 800V | 80A | DO-203AB, DO-5, Stud | 19.63mm | 36.5mm | 17mm | Lead Free | 1 | 6 Weeks | No SVHC | 2 | yes | EAR99 | 8541.10.00.80 | Standard | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 80A | 49A | 1.55V | 650A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 690A | 4mA | 1.2kV | 690A | 1.2kV | Avalanche | 1.2kV | 49A | 1 | 1200V | 4mA @ 1200V | 1.55V @ 150A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M0759YC160 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W2 | Standard Recovery >500ns, > 200mA (Io) | 2μs | Standard | 1600V | 50mA @ 1600V | 1.7V @ 1500A | 759A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS15-018CS | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-dgsk32018cs-datasheets-7846.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 80A | 250μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | TO-252AA | 23 ns | 23 ns | Schottky | 180V | 24A | 1 | 250μA @ 180V | 1.5V @ 7.5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-06BS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | DSEP29-06 | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | Standard | 600V | 30A | 600V | 250μA @ 600V | 2.52V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-04A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dsep6004a-datasheets-1809.pdf | TO-247-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.24V | 600A | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 650μA | 600A | 400V | 30 ns | 30 ns | Standard | 400V | 60A | 1 | 650μA @ 400V | 1.5V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS4-025A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-dgsk8025a-datasheets-8384.pdf | TO-220-2 | 2 | EAR99 | HIGH SWITCHING SPEED | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 1 | Not Qualified | R-PSFM-T2 | 10A | 700μA | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | TO-220AC | Schottky | 250V | 5.4A | 1 | 700μA @ 250V | 1.6V @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VDI50-06P1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/ixys-vid5006p1-datasheets-7499.pdf | ECO-PAC2 | 10 | 16 Weeks | 10 | e3 | Matte Tin (Sn) | 130W | UPPER | UNSPECIFIED | 260 | VDI | 10 | 35 | 1 | Not Qualified | 16nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 130W | 600V | 100 ns | 2.9V | 42.5A | Standard | 310 ns | 600μA | 2.9V @ 15V, 50A | NPT | Yes | 16nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK90N20 | IXYS | $91.84 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | 200V | 90A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | No SVHC | 20mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 80ns | 30 ns | 75 ns | 90A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 500W Tc | 200V | N-Channel | 9000pF @ 25V | 4 V | 23m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH16N120P | IXYS | $7.59 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh16n120p-datasheets-2331.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 660W | 1 | FET General Purpose Power | R-PSFM-T3 | 28ns | 35 ns | 66 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 660W Tc | TO-247AD | 35A | 0.95Ohm | 800 mJ | 1.2kV | N-Channel | 6900pF @ 25V | 950m Ω @ 8A, 10V | 6.5V @ 1mA | 16A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N100D-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 1.1W Ta 25W Tc | N-Channel | 100pF @ 25V | 80 Ω @ 50mA, 0V | 4.5V @ 25μA | 400mA Tj | 5.8nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP14N85X | IXYS | $29.83 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n85x-datasheets-4389.pdf | TO-220-3 | 19 Weeks | yes | 850V | 460W Tc | N-Channel | 1043pF @ 25V | 550m Ω @ 500mA, 10V | 5.5V @ 1mA | 14A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB80N50Q2 | IXYS | $15.70 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfb80n50q2-datasheets-4947.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 60mOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 960W | 1 | FET General Purpose Power | 25ns | 11 ns | 60 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 5000 mJ | 500V | N-Channel | 15000pF @ 25V | 60m Ω @ 500mA, 10V | 5.5V @ 8mA | 80A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA80N075L2 | IXYS | $11.63 |
Min: 1 Mult: 1 |
download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtp80n075l2-datasheets-0936.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 28 Weeks | 1.946308g | not_compliant | e3 | Matte Tin (Sn) | 1 | 15 ns | 35ns | 12 ns | 40 ns | 80A | 20V | 75V | 357W Tc | N-Channel | 3600pF @ 25V | 24m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN110N20L2 | IXYS | $45.40 |
Min: 1 Mult: 1 |
download | Linear L2™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn110n20l2-datasheets-2203.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 735W Tc | 275A | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 100A Tc | 500nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N50D2 | IXYS | $1.32 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty08n50d2-datasheets-2799.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | yes | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 800mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 60W Tc | TO-263AA | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 800mA Tc | 12.7nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP150N15X4 | IXYS | $7.38 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp150n15x4-datasheets-5515.pdf | TO-220-3 | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 7.2m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N100X | IXYS | $14.98 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n100x-datasheets-5605.pdf | TO-247-3 | 19 Weeks | 1000V | 860W Tc | N-Channel | 3290pF @ 25V | 320m Ω @ 13A, 10V | 6V @ 4mA | 26A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB62N80Q3 | IXYS | $35.14 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfb62n80q3-datasheets-5706.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | 264 | No | 3 | Single | 1.56kW | 1 | FET General Purpose Power | R-PSIP-T3 | 54 ns | 300ns | 62 ns | 62A | 30V | SILICON | DRAIN | SWITCHING | 1560W Tc | 5000 mJ | 800V | N-Channel | 13600pF @ 25V | 140m Ω @ 31A, 10V | 6.5V @ 8mA | 62A Tc | 270nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK64N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx64n60p3-datasheets-2082.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 1.13kW | 1 | FET General Purpose Power | Not Qualified | 43 ns | 17ns | 11 ns | 66 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1130W Tc | 160A | 0.095Ohm | 1500 mJ | 600V | N-Channel | 9900pF @ 25V | 95m Ω @ 32A, 10V | 5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH16N10D2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtt16n10d2-datasheets-5658.pdf | TO-247-3 | 3 | 24 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 43ns | 70 ns | 340 ns | 16A | SILICON | DRAIN | SWITCHING | 100V | 830W Tc | 0.064Ohm | N-Channel | 5700pF @ 25V | 64m Ω @ 8A, 0V | 16A Tc | 225nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N100Q3 | IXYS | $53.16 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n100q3-datasheets-7206.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 48 ns | 300ns | 66 ns | 38A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 960W Tc | 110A | 0.22Ohm | 1kV | N-Channel | 13600pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 8mA | 38A Tc | 264nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1F132N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f132n50p3-datasheets-2252.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 30 Weeks | 24 | Single | FET General Purpose Power | 42 ns | 90 ns | 63A | 40V | 500V | 520W Tc | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP15N50L2 | IXYS | $31.67 |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp15n50l2-datasheets-1635.pdf | TO-220-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 300W Tc | TO-220AB | 0.48Ohm | 750 mJ | N-Channel | 4080pF @ 25V | 2.5 V | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 15A Tc | 123nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU12N06T | IXYS | $5.53 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtu12n06t-datasheets-8277.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 33W Tc | 30A | 0.085Ohm | 20 mJ | N-Channel | 256pF @ 25V | 85m Ω @ 6A, 10V | 4V @ 25μA | 12A Tc | 3.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY2N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixty2n65x2-datasheets-9221.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 2A | 650V | 55W Tc | N-Channel | 180pF @ 25V | 2.3 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 4.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP20N50P3M | IXYS | $4.57 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp20n50p3m-datasheets-2906.pdf | TO-220-3 | 3 | 26 Weeks | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 58W Tc | TO-220AB | 8A | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH94N30P3 | IXYS | $10.58 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfh94n30p3-datasheets-3561.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 23 ns | 49 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 300V | 5V | 1040W Tc | TO-247AD | 2500 mJ | N-Channel | 5510pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 102nC @ 10V | 10V | ±20V |
