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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4966DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4966dyt1ge3-datasheets-2310.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 2W | SI4966 | 2 | Dual | 2W | 2 | 8-SO | 40 ns | 40ns | 40 ns | 90 ns | 7.1A | 12V | 20V | 2W | 25mOhm | 2 N-Channel (Dual) | 25mOhm @ 7.1A, 4.5V | 1.5V @ 250μA | 50nC @ 4.5V | Logic Level Gate | 25 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG507BEQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg507bewt1ge3-datasheets-3635.pdf | 28-TSSOP (0.173, 4.40mm Width) | 9.7mm | Lead Free | 28 | 15 Weeks | 402.988471mg | Unknown | 20V | 5V | 450Ohm | 28 | yes | No | 1 | 5μA | GULL WING | 260 | 15V | 0.65mm | DG507 | 28 | 8 | 40 | 0.1mA | 2 | 217MHz | 20V | Multiplexer | Dual, Single | 5V | -15V | 300Ohm | 84 dB | 10Ohm | BREAK-BEFORE-MAKE | 310ns | 12V ±5V~20V | 0.03A | 8:1 | 1nA | 3pF 17pF | 250ns, 200ns | 1pC | 10 Ω | -84dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5915DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5915dct1e3-datasheets-2322.pdf | 8-SMD, Flat Lead | 1.1W | SI5915 | 1206-8 ChipFET™ | 3.4A | 8V | 1.1W | 2 P-Channel (Dual) | 70mOhm @ 3.4A, 4.5V | 450mV @ 250μA (Min) | 3.4A | 9nC @ 4.5V | Logic Level Gate | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3535DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg3536dbt5e1-datasheets-8351.pdf | 10-WFBGA | 1μA | 15 Weeks | 6V | 1.8V | 400mOhm | 10 | No | 1nA | 457mW | DG3535 | 2 | 10-Micro Foot® (2x1.5) | SPDT | 82 ns | 73 ns | Single | 400mOhm | 2:1 | 2.7V~3.3V | SPDT | 2nA | 145pF | 82ns, 73ns | 21pC | 50mOhm (Max) | -69dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6969BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6969bdqt1e3-datasheets-4682.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 30mOhm | 8 | 830mW | SI6969 | 2 | Dual | 8-TSSOP | 20 ns | 35ns | 35 ns | 110 ns | -4.6A | 8V | 12V | 830mW | 30mOhm | -12V | 2 P-Channel (Dual) | 30mOhm @ 4.6A, 4.5V | 800mV @ 250μA | 4A | 25nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431EDY-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 8 | 21 Weeks | 1 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 5.5V | 1 | NOT SPECIFIED | 1 | R-PDSO-G8 | 30Ohm | 80 dB | 0.4Ohm | 200ns | 2:1 | 2.7V~12V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7905DN-T1-E3 | Vishay Siliconix | $6.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7905dnt1ge3-datasheets-5421.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 15 Weeks | 60mOhm | 8 | No | 20.8W | SI7905 | 2 | Dual | PowerPAK® 1212-8 Dual | 880pF | 6 ns | 13ns | 10 ns | 26 ns | 5A | 20V | 40V | 20.8W | 60mOhm | -40V | 2 P-Channel (Dual) | 880pF @ 20V | 60mOhm @ 5A, 10V | 3V @ 250μA | 6A | 30nC @ 10V | Standard | 60 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 55Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG401 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ910DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-siz910dtt1ge3-datasheets-2518.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 8 | EAR99 | No | 100W | SIZ910 | 8 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 35ns | 12 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 48W 100W | 100A | 0.0075Ohm | 31 mJ | 30V | 2 N-Channel (Half Bridge) | 1500pF @ 15V | 5.8m Ω @ 20A, 10V | 2.2V @ 250μA | 40nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG508BEQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 500μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg508bent1ge4-datasheets-3833.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 430μm | 4.4mm | 15V | 250MHz | Lead Free | -200μA | 16 | 15 Weeks | 172.98879mg | Unknown | 44V | 12V | 500Ohm | 16 | yes | No | 1 | 10μA | e3 | MATTE TIN | 450mW | GULL WING | 260 | 15V | 0.65mm | DG508 | 16 | 8 | Single | 40 | 450mW | 1 | 300 ns | 250 ns | 20V | Multiplexer | 300 ns | Dual, Single | 5V | -15V | 8 | 380Ohm | 81 dB | 10Ohm | BREAK-BEFORE-MAKE | 340ns | 0.03A | 8:1 | ±5V~20V | 1nA | 3pF 13pF | 250ns, 240ns | 2pC | 10 Ω | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3469DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3469dvt1e3-datasheets-3277.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 30mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.14W | 1 | Other Transistors | 10 ns | 12ns | 12 ns | 50 ns | -6.7A | 20V | SILICON | SWITCHING | -3V | 1.14W Ta | 5A | P-Channel | -3 V | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 5A Ta | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGQ2788AEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dgq2788aent1ge4-datasheets-6265.pdf | 16-UFQFN | 16 Weeks | 2 | 16-miniQFN (1.8x2.6) | 338MHz | 500mOhm | 2:2 | 1.8V~5.5V | DPDT | 50μs, 1μs | -245pC | 50mOhm | -61dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3459BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3459bdvt1ge3-datasheets-5068.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 216MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 5 ns | 12ns | 10 ns | 18 ns | -2.2A | 20V | SILICON | SWITCHING | 60V | -3V | 2W Ta 3.3W Tc | 0.0022A | 30 pF | P-Channel | 350pF @ 30V | -3 V | 216m Ω @ 2.2A, 10V | 3V @ 250μA | 2.9A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500μA | 16 | 12 Weeks | 1.627801g | 44V | 25V | 55Ohm | 16 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 450mW | NOT SPECIFIED | 15V | DG403 | 16 | 1 | SPDT | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | 1:1 | SPST - NO/NC | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4920DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4920dyt1ge3-datasheets-2296.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 25mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4920 | 8 | Dual | 40 | 2W | 2 | FET General Purpose Powers | Not Qualified | 790pF | 12 ns | 10ns | 15 ns | 60 ns | 6.9A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 40A | 30V | 2 N-Channel (Dual) | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 23nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9236DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Digi-Reel® | 1 (Unlimited) | CMOS | 500nA | 0.6mm | ROHS3 Compliant | /files/vishaysiliconix-dg9236dnt1e4-datasheets-6438.pdf | 10-UFQFN | 1.8mm | Lead Free | 500nA | 10 | 7.002332mg | 16V | 2.7V | 145Ohm | 10 | yes | unknown | 2 | e4 | NICKEL PALLADIUM GOLD | 208mW | QUAD | NO LEAD | 260 | 3V | DG9236 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | Not Qualified | 800MHz | 70 ns | 55 ns | Single | 4 | 2 | 145Ohm | 63 dB | 5Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~16V | SPDT | 1nA | 2pF | 70ns, 55ns | 6pC | 2 Ω | -70dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 13 Weeks | 1.200007g | 14 | no | No | e0 | Tin/Lead (Sn/Pb) | 2W | 14 | 4 | 2W | FET General Purpose Power | 14-DIP | 400mA | 20V | 90V | METAL-OXIDE SEMICONDUCTOR | 90V | 4 N-Channel | 60pF @ 25V | 4.5 Ω @ 1A, 10V | 2.5V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg442bdj-datasheets-7370.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 10 Weeks | 25V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | NO | 470mW | NOT SPECIFIED | 15V | DG441 | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 120ns | 220ns | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3410EV-T1_GE3 | Vishay Siliconix | $0.62 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq3410evt1ge3-datasheets-7258.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 12 Weeks | 19.986414mg | Unknown | 6 | No | 1 | Single | 5W | 1 | 6-TSOP | 1.005nF | 9 ns | 12ns | 7 ns | 20 ns | 8A | 20V | 30V | 2V | 5W Tc | 17.5mOhm | 30V | N-Channel | 1005pF @ 15V | 17.5mOhm @ 5A, 10V | 2.5V @ 250μA | 8A Tc | 21nC @ 10V | 17.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 75μA | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg409dj-datasheets-7506.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500μA | 16 | 6 Weeks | 547.485991mg | No SVHC | 36V | 5V | 100Ohm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 600mW | Multiplexer or Switches | 1 | 150 ns | 150 ns | 20V | 15V | 175 ns | Dual, Single | 5V | 30mA | 100Ohm | 40Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS65DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss65dnt1ge3-datasheets-8043.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 30V | 5.1W Ta 65.8W Tc | P-Channel | 4930pF @ 15V | 4.6mOhm @ 15A, 10V | 2.3V @ 250μA | 25.9A Ta 94A Tc | 138nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG180AA | Vishay Siliconix | $145.75 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg180aa-datasheets-7546.pdf | TO-100-10 Metal Can | 9.4mm | 4.7mm | 9.4mm | 15V | 1.5mA | 10Ohm | 450mW | 2 | TO-100-10 | 400 ns | 200 ns | 15V | Dual | 10Ohm | 10Ohm | 1:1 | SPST - NC | ±15V | 10nA | 21pF 17pF | 400ns, 200ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL210TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfl210trpbf-datasheets-8841.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 8 Weeks | 250.212891mg | Unknown | 1.5Ohm | 4 | Tin | No | 1 | 2W | 1 | SOT-223 | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 960mA | 20V | 200V | 4V | 2W Ta 3.1W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 2 V | 1.5Ohm @ 580mA, 10V | 4V @ 250μA | 960mA Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-DIP (0.300, 7.62mm) | 16 | 8 Weeks | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 16 | Multiplexer or Switches | 512/+-15V | 4 | Not Qualified | R-PDIP-T16 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NO | 5V~36V ±5V~20V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA86EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja86ept1ge3-datasheets-0064.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 260 | 1 | NOT SPECIFIED | 48W | 1 | 175°C | R-PSSO-G4 | 10 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 84A | 20 mJ | 80V | N-Channel | 1400pF @ 25V | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 16 | 14 Weeks | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 16 | Multiplexer or Switches | 12/+-15V | 4 | 22V | 4.5V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irlz24pbf-datasheets-1461.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 3 | 1 | Single | 60W | 1 | FET General Purpose Power | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2V | 60W Tc | TO-220AB | 68A | N-Channel | 870pF @ 25V | 2 V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 10μA | 16 | 1.627801g | No SVHC | 25V | 4.5V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | 470mW | Multiplexer or Switches | 512/+-15V | Not Qualified | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL620PBF | Vishay Siliconix | $6.45 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620pbf-datasheets-2361.pdf | 200V | 5.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800mOhm | 3 | Tin | No | 1 | Single | 50W | 1 | TO-220AB | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 5.2A | 10V | 200V | 2V | 50W Tc | 800mOhm | 200V | N-Channel | 360pF @ 25V | 2 V | 800mOhm @ 3.1A, 5V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 1μA | 16 | 8 Weeks | 1.627801g | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | 1μA | e0 | Tin/Lead (Sn/Pb) | 450mW | 16 | 4 | 450mW | Multiplexer or Switches | 512/+-15V | Not Qualified | SPST | 250 ns | 140 ns | 22V | 20V | Dual, Single | 7V | SEPARATE OUTPUT | 85Ohm | 50Ohm | BREAK-BEFORE-MAKE | NC | 5V~36V ±5V~20V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 140ns | -1pC | -100dB @ 1MHz |
