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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI7940DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 17mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 7.6A | 8V | SILICON | DRAIN | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG452EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 500nA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | 1nA | e3 | MATTE TIN | 600mW | GULL WING | 260 | 5V | 1.27mm | DG452 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 4Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | NO | 1:1 | SPST - NO | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3443BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3443bdvt1e3-datasheets-3274.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 990.6μm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 60mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 22 ns | 35ns | 25 ns | 45 ns | 3.6A | 12V | SILICON | 20V | -1.4V | 1.1W Ta | -20V | P-Channel | -1.4 V | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LEDJ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-PowerDIP (0.300, 7.62mm) | 16 Weeks | 26Ohm | 16 | 4 | 16-PDIP | 26Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ728DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-siz728dtt1ge3-datasheets-5670.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | 48W | C BEND | SIZ728 | 6 | 2 | Dual | 2 | FET General Purpose Power | 18ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 27W 48W | 70A | 0.0077Ohm | 25V | 2 N-Channel (Half Bridge) | 890pF @ 12.5V | 7.7m Ω @ 18A, 10V | 2.2V @ 250μA | 16A 35A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG506BEN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg507bewt1ge3-datasheets-3635.pdf | 28-LCC (J-Lead) | 11.582mm | 4.57mm | 11.582mm | 12V | 28 | 12 Weeks | 1.182714g | Unknown | 20V | 5V | 450Ohm | 28 | yes | No | 1 | 5μA | 1.693W | QUAD | J BEND | 260 | 15V | DG506 | 28 | 16 | Single | 40 | 1 | 114MHz | 20V | Multiplexer | Dual, Single | 5V | -15V | 300Ohm | 85 dB | 10Ohm | BREAK-BEFORE-MAKE | 220ns | 0.03A | 16:1 | ±5V~20V | 1nA | 3pF 13pF | 250ns, 200ns | 1pC | 10 Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA922EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia922edjt1ge3-datasheets-5889.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 6 | yes | EAR99 | No | 1.9W | Dual | 2 | FET General Purpose Power | 60ns | 45 ns | 25 ns | 4.4A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | 0.072Ohm | 30V | 2 N-Channel (Dual) | 64m Ω @ 3A, 4.5V | 1.4V @ 250μA | 4.5A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9252EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.8mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9253ent1e4-datasheets-6421.pdf | 16-WFQFN | 449MHz | 16 | 57.09594mg | 16V | 2.7V | 182Ohm | 16 | yes | No | 1 | 525mW | QUAD | 260 | 5V | DG9252 | 16 | 4 | 40 | 0.01mA | 2 | 455 ns | 136 ns | 5V | Multiplexer | Dual, Single | 2.7V | -5V | 182Ohm | 45 dB | 3.1Ohm | BREAK-BEFORE-MAKE | 131ns | 369ns | 2.7V~16V ±2.7V~5V | 0.03A | 4:1 | SP4T | 1nA | 2.2pF 6.6pF | 250ns, 125ns | 4.1pC | 3.1 Ω | -67dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA936EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia936edjt1ge3-datasheets-6242.pdf | PowerPAK® SC-70-6 Dual | 28.009329mg | Unknown | 27mOhm | 6 | EAR99 | 7.8W | NOT SPECIFIED | SIA936ED | 2 | Dual | NOT SPECIFIED | 20 ns | 20ns | 20 ns | 45 ns | 4.5A | 1.3V | 20V | 1.3V | 20V | 2 N-Channel (Dual) | 34m Ω @ 4A, 4.5V | 1.3V @ 250μA | 17nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-SOIC (0.154, 3.90mm Width) | Lead Free | 111 Weeks | 36V | 13V | 45Ohm | no | unknown | 16 | 2 | SPST | 22V | 7V | 45Ohm | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIAA40DJ-T1-GE3 | Vishay Siliconix | $0.48 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siaa40djt1ge3-datasheets-7512.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 19.2W Tc | 30A | 60A | 0.016Ohm | 5 mJ | N-Channel | 1200pF @ 20V | 12.5m Ω @ 5A, 10V | 2.4V @ 250μA | 30A Tc | 12nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 1μA | 8 | 930.006106mg | 36V | 13V | 35Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | 2.54mm | 8 | 400mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS862ADN-T1-GE3 | Vishay Siliconix | $0.76 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis862adnt1ge3-datasheets-8231.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 60V | 3.6W Ta 39W Tc | N-Channel | 1235pF @ 30V | 7.2mOhm @ 10A, 10V | 2.5V @ 250μA | 15.8A Ta 52A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG180AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg180aa-datasheets-7546.pdf | 14-DIP (0.300, 7.62mm) | 19.56mm | 3.05mm | 7.87mm | 15V | 1.5mA | 1.620005g | 10Ohm | 14 | 825mW | 2 | 14-DIP | 400 ns | 200 ns | 15V | Dual | 10Ohm | 10Ohm | 1:1 | SPST - NC | ±15V | 10nA | 21pF 17pF | 400ns, 200ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9433BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si9433bdyt1e3-datasheets-9829.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 40 ns | 55ns | 30 ns | 65 ns | 4.5A | 12V | SILICON | 20V | -1.5V | 1.3W Ta | 0.04Ohm | -20V | P-Channel | 40m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg200aaa883-datasheets-7600.pdf | 14-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 2mA | 16 Weeks | 1.200007g | 36V | 13V | 70Ohm | 14 | 825mW | 2 | 825mW | 2 | 14-CERDIP | 1 μs | 425 ns | 22V | 15V | Dual | 7V | 2 | 2 | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4156DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4156dyt1ge3-datasheets-0949.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 6mOhm | 8 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | Not Qualified | 25 ns | 20ns | 15 ns | 25 ns | 24A | 20V | SILICON | SWITCHING | 2.2V | 2.5W Ta 6W Tc | 30V | N-Channel | 1700pF @ 15V | 6m Ω @ 15.7A, 10V | 2.2V @ 250μA | 24A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg201bdy-datasheets-7652.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Contains Lead | 50μA | 16 | 8 Weeks | 665.986997mg | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | 100μA | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 15V | 1.27mm | 16 | 640mW | Multiplexer or Switches | +-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf9530pbf-datasheets-1865.pdf | -100V | -12A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 300mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 860pF | 12 ns | 52ns | 39 ns | 31 ns | -12A | 20V | 100V | -4V | 88W Tc | 240 ns | 300mOhm | -100V | P-Channel | 860pF @ 25V | 300mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg201hsdqt1e3-datasheets-3678.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 16.5V | 10mA | 16 | 8 Weeks | 1.627801g | 25V | 13V | 50Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 16 | 470mW | Multiplexer or Switches | Not Qualified | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7431DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7431dpt1e3-datasheets-5285.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | R-XDSO-C5 | 23 ns | 49ns | 49 ns | 110 ns | -2.2A | 20V | SILICON | DRAIN | SWITCHING | 200V | -4V | 1.9W Ta | 30A | 45 mJ | -200V | P-Channel | -4 V | 174m Ω @ 3.8A, 10V | 4V @ 250μA | 2.2A Ta | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG271BDY | Vishay Siliconix | $2.41 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg271bdy-datasheets-7712.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 7.5mA | 8 Weeks | 547.485991mg | 36V | 13V | 50Ohm | 16 | 600mW | 4 | 600mW | 4 | 16-SOIC | 65 ns | 65 ns | 22V | 15V | Dual | 7V | 4 | 4 | 50Ohm | 50Ohm | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfpc50apbf-datasheets-4063.pdf | 600V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 580mOhm | 3 | No | 1 | Single | 180W | 1 | TO-247-3 | 2.1nF | 15 ns | 40ns | 29 ns | 33 ns | 11A | 30V | 600V | 4V | 180W Tc | 580mOhm | 600V | N-Channel | 2100pF @ 25V | 4 V | 580mOhm @ 6A, 10V | 4V @ 250μA | 11A Tc | 70nC @ 10V | 580 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG303BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 230μA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 1mA | 14 | 8 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | no | No | 4 | Non-Inverting | 470mW | 15V | 14 | SPST | 470mW | Multiplexer or Switches | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | 100mA | 4 | 50Ohm | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | DPST - NO/NC | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7309DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7309dnt1ge3-datasheets-4775.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 115MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 15ns | 33 ns | 30 ns | -8A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 3.2W Ta 19.8W Tc | 3.9A | 20A | -60V | P-Channel | 600pF @ 30V | 115m Ω @ 3.9A, 10V | 3V @ 250μA | 8A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG300AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg300aak883-datasheets-7683.pdf | TO-100-10 Metal Can | 19.56mm | 3.94mm | 7.62mm | 15V | 500μA | 1.200007g | 36V | 13V | 50Ohm | 14 | No | 825mW | 2 | 825mW | 2 | TO-100-10 | 300 ns | 250 ns | 22V | 15V | Dual, Single | 7V | 2 | 2 | 50Ohm | 30Ohm | 1:1 | SPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA80EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqja80ept1ge3-datasheets-6091.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 16 ns | 31 ns | 60A | 20V | 80V | 68W Tc | 5.8mOhm | 80V | N-Channel | 3800pF @ 25V | 7mOhm @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG271BCJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg271bdy-datasheets-7712.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 7.5mA | 8 Weeks | 1.627801g | 36V | 13V | 50Ohm | 16 | no | unknown | 470mW | 16 | 4 | 65 ns | 65 ns | 22V | 15V | Dual | 7V | 50Ohm | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40N06-14L_GE3 | Vishay Siliconix | $1.62 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n0614lge3-datasheets-8291.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 60V | 75W Tc | N-Channel | 2105pF @ 25V | 14mOhm @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500μA | 16 | 8 Weeks | 1.627801g | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | 450mW | NOT SPECIFIED | 15V | 16 | 1 | NOT SPECIFIED | 450mW | Multiplexer or Switches | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz |
