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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG458AK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2012 | /files/vishay-dg458ak883-datasheets-0045.pdf | 16-CDIP (0.300, 7.62mm) | 16 | 18 Weeks | 22V | 1.5kOhm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 2.54mm | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 600mW | Multiplexer or Switches | 1 | 18V | 4.5V | -15V | 8 | 1.5kOhm | BREAK-BEFORE-MAKE | 250ns | 0.02A | 8:1 | ±4.5V~18V | 1nA | 5pF 15pF | 250ns, 250ns | 90 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR182DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir182dpt1re3-datasheets-7123.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 69.4W Tc | 117A | 200A | 0.0028Ohm | 61.25 mJ | N-Channel | 3250pF @ 30V | 2.8m Ω @ 15A, 10V | 3.6V @ 250μA | 60A Tc | 64nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM301BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfd9010pbf-datasheets-8302.pdf | -50V | -1.1A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 4 | No | Single | 1W | 4-DIP, Hexdip, HVMDIP | 240pF | 6.1 ns | 47ns | 39 ns | 13 ns | -1.1A | 20V | 50V | -4V | 1W Tc | 350mOhm | 50V | P-Channel | 240pF @ 25V | 500mOhm @ 580mA, 10V | 4V @ 250μA | 1.1A Tc | 11nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM191BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2017 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14SPBF | Vishay Siliconix | $7.11 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz14spbf-datasheets-8912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 200mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 3.7W Ta 43W Tc | 130 ns | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | no | unknown | 1 | e0 | TIN LEAD | 400mW | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | 1 | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG24N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihg24n65ege3-datasheets-9723.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 145mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM304BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2009 | Metal | 36V | 13V | 10 | 22V | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW70N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw70n60efge3-datasheets-0074.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 520W Tc | TO-247AD | 229A | 0.038Ohm | 1706 mJ | N-Channel | 7500pF @ 100V | 38m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 380nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 4 | 280MHz | 30Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | 600V | 6.2A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | Unknown | 3 | Tin | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 4V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8996101EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | CMOS | Non-RoHS Compliant | CDIP | 16 | 36V | 13V | 16 | 2 | DUAL | 16 | MILITARY | 2 | DPST | 900mW | Multiplexer or Switches | 5+-15V | Not Qualified | 22V | 7V | 4 | SEPARATE OUTPUT | BREAK-BEFORE-MAKE | 150ns | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n65ege3-datasheets-2191.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 38.000013g | 3 | No | 1 | Single | 417W | 1 | 47 ns | 87ns | 103 ns | 156 ns | 47A | 20V | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 0.072Ohm | N-Channel | 5682pF @ 100V | 72m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 273nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 77053012A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg201aak-datasheets-7661.pdf | 20-LCC | 8.89mm | 8.89mm | 20 | 20 | unknown | 4 | e0 | TIN LEAD | YES | QUAD | NO LEAD | 240 | 15V | 1.27mm | 20 | 1 | 30 | 4 | Not Qualified | MIL-STD-883 | -15V | 175Ohm | 70 dB | 650ns | 1000ns | 1:1 | SPST - NC | ±15V | 1nA | 5pF 5pF | 600ns, 450ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG24N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg24n65efge3-datasheets-2629.pdf | TO-247-3 | 21 Weeks | TO-247AC | 650V | 250W Tc | N-Channel | 2774pF @ 100V | 156mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM184BEC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfpg30pbf-datasheets-3563.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 5Ohm | 3 | 1 | Single | 125W | 1 | TO-247-3 | 980pF | 12 ns | 24ns | 29 ns | 89 ns | 3.1A | 20V | 1000V | 4V | 125W Tc | 5Ohm | N-Channel | 980pF @ 25V | 4 V | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 80nC @ 10V | 5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 10 Weeks | 1.627801g | 12V | 2.7V | 50Ohm | 16 | 900mW | DG412 | 4 | 900mW | 4 | 16-PDIP | 280MHz | SPST | 85 ns | 60 ns | 6V | 5V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC40GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfibc40gpbf-datasheets-4018.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 1.2Ohm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.3nF | 2.5kV | 13 ns | 18ns | 20 ns | 55 ns | 3.5A | 20V | 600V | 600V | 4V | 40W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 4 V | 1.2Ohm @ 2.1A, 10V | 4V @ 250μA | 3.5A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | Lead Free | 1μA | 16 | 1.627801g | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | unknown | 4 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG613 | 16 | 1 | SPST | NOT SPECIFIED | 470mW | Multiplexer or Switches | 1 | Not Qualified | 35 ns | 25 ns | 15V | Dual, Single | 10V | -3V | 4 | 45Ohm | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NO/NC | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG40N60E-GE3 | Vishay Siliconix | $26.85 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg40n60ege3-datasheets-4734.pdf | TO-247-3 | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 329W Tc | TO-247AC | 40A | 123A | 0.075Ohm | 691 mJ | N-Channel | 4436pF @ 100V | 75m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 547.485991mg | 12V | 2.7V | 50Ohm | 16 | yes | No | 4 | 20nA | e3 | MATTE TIN | 650mW | GULL WING | 260 | 5V | 1.27mm | DG412 | 16 | 1 | 40 | 650mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU1N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 3 | 8 Weeks | 329.988449mg | Unknown | 3 | No | 260 | 3 | 1 | Single | 40 | 36W | 1 | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 4V | 36W Tc | 5.6A | 7Ohm | 600V | N-Channel | 229pF @ 25V | 7 Ω @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2031DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2031dqt1e3-datasheets-5308.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 100nA | 10 | 5.5V | 1.8V | 750mOhm | 10 | yes | No | 2 | 10nA | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2031 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | 3V | 58 ns | 49 ns | Single | 4 | 2 | 750mOhm | 71 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | 59ns | 2:1 | 1.8V~5.5V | SPDT | 1nA | 117pF | 58ns, 49ns | 4pC | 50m Ω (Max) | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2032DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2032dnt1e4-datasheets-5358.pdf | 12-VFQFN Exposed Pad | 3mm | 900μm | 3mm | Lead Free | 1μA | 12 | 10 Weeks | 21.99923mg | 5.5V | 1.8V | 5Ohm | 12 | yes | No | 2 | 10nA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.295W | QUAD | 260 | 3V | 0.5mm | DG2032 | 12 | 1 | 40 | 1.295W | Multiplexer or Switches | 3V | 53 ns | 38 ns | Single | 4 | 2 | 5Ohm | 78 dB | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 1nA | 15pF | 53ns, 38ns | 38pC | 400m Ω (Max) | -82dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60aege3-datasheets-8981.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | YES | GULL WING | 1 | R-PSSO-G2 | SILICON | SWITCHING | 600V | 600V | 179W Tc | 20A | 49A | 0.18Ohm | 204 mJ | N-Channel | 1451pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2717DX-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2717dxt1e3-datasheets-5385.pdf | SOT-563, SOT-666 | 1μA | 6 | 14 Weeks | 4.3V | 1.6V | 700mOhm | 6 | yes | unknown | 1 | 10nA | e3 | Matte Tin (Sn) | 172mW | DUAL | FLAT | 260 | 3V | 0.5mm | DG2717 | 6 | 1 | 40 | 172mW | Multiplexer or Switches | 1 | Not Qualified | 74 ns | 34 ns | Single | 2 | 1 | 700mOhm | 54 dB | 0.06Ohm | BREAK-BEFORE-MAKE | 44ns | NC | 2:1 | 1.6V~4.3V | SPDT | 76pF | 44ns, 29ns | 28pC | 600m Ω (Max) | -57dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2300DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si2300dst1ge3-datasheets-1048.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 68MOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.1W | 1 | FET General Purpose Power | 150°C | 5 ns | 15ns | 11 ns | 15 ns | 3.1A | 12V | SILICON | SWITCHING | 600mV | 1.1W Ta 1.7W Tc | 30V | N-Channel | 320pF @ 15V | 68m Ω @ 2.9A, 4.5V | 1.5V @ 250μA | 3.6A Tc | 10nC @ 10V | 2.5V 4.5V | ±12V |
