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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIHP30N60E-E3 | Vishay Siliconix | $5.02 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 17 Weeks | 6.000006g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | 600V | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM306BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2009 | CDIP | 36V | 13V | 22V | 7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB065N60E-GE3 | Vishay Siliconix | $6.50 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb065n60ege3-datasheets-9834.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM307BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishay-sjm307bcc01-datasheets-0217.pdf | 36V | 13V | 14 | 2 | 22V | 7V | 4 | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihg22n50de3-datasheets-1811.pdf | TO-247-3 | Lead Free | 3 | 13 Weeks | 38.000013g | 3 | No | SINGLE | 1 | 312W | 1 | 21 ns | 42ns | 40 ns | 47 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 312W Tc | TO-247AC | 67A | N-Channel | 1938pF @ 100V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 86716012A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | CMOS | Non-RoHS Compliant | SMD/SMT | 20 | 4 | YES | QUAD | NO LEAD | 15V | 1.27mm | 20 | MILITARY | 125°C | -55°C | SPST | Multiplexer or Switches | +-15V | Not Qualified | S-XQCC-N20 | 38535Q/M;38534H;883B | -15V | SEPARATE OUTPUT | 75Ohm | BREAK-BEFORE-MAKE | 50ns | NC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUG90090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sug90090ege3-datasheets-2051.pdf | TO-247-3 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 395W Tc | N-Channel | 5220pF @ 100V | 9.5m Ω @ 20A, 10V | 4V @ 250μA | 100A Tc | 129nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BXA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp33n60efge3-datasheets-2335.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 4V | 278W Tc | TO-220AB | 0.098Ohm | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8976001XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA445EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sia445edjtt1ge3-datasheets-3296.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 19W Tc | 12A | 50A | 0.0167Ohm | P-Channel | 2180pF @ 10V | 16.7m Ω @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 69nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2731DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2731dqt1e3-datasheets-4047.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 1mA | 10 | No SVHC | 4.3V | 1.6V | 400mOhm | 10 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2731 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | Not Qualified | 110 ns | 30 ns | Single | 4 | 2 | 450mOhm | 300mOhm | 75 dB | 0.03Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 1nA | 104pF | 110ns, 30ns | 9pC | 30m Ω | -75dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG15N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg15n60ege3-datasheets-3891.pdf | TO-247-3 | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 180W Tc | TO-247AC | 15A | 39A | 0.28Ohm | 102 mJ | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Lead Free | 1μA | 16 | 665.986997mg | No SVHC | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | 5nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG611 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 515-3V | SPST | 35 ns | 25 ns | 15V | 12V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihb33n60efge3-datasheets-4589.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 14 Weeks | 1.946308g | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 278W Tc | 0.098Ohm | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 172.98879mg | 12V | 2.7V | 50Ohm | 16 | No | 450mW | DG411 | 4 | 450mW | 4 | 16-TSSOP | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4434DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4434dyt1e3-datasheets-5004.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | 16 ns | 23ns | 19 ns | 47 ns | 2.1A | 20V | SILICON | SWITCHING | 1.56W Ta | 250V | N-Channel | 155m Ω @ 3A, 10V | 4V @ 250μA | 2.1A Ta | 50nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2001DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2001dvt1e3-datasheets-5296.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 1μA | 6 | 14 Weeks | 19.986414mg | 5.5V | 1.8V | 7Ohm | 6 | yes | No | 1 | e3 | Matte Tin (Sn) | 570mW | DUAL | GULL WING | 260 | 2V | 0.95mm | DG2001 | 6 | 1 | 30 | 570mW | Multiplexer or Switches | 37 ns | 27 ns | Single | 2 | 1 | 7Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 53ns | 2:1 | 1.8V~5.5V | SPDT | 900pA | 17pF | 20ns, 10ns | 7pC | -70dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR014 | Vishay Siliconix | $0.12 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | Unknown | 3 | No | Single | D-Pak | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | 60V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 2 V | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2307DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2307dlt1ge3-datasheets-7701.pdf | 6-TSSOP, SC-88, SOT-363 | 1μA | 6 | 5.5V | 2V | 20Ohm | 6 | yes | No | 1 | 10μA | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 3V | DG2307 | 6 | 2 | 40 | 250mW | Multiplexer or Switches | 250MHz | 5.9 ns | 5.9 ns | Single | 2 | 1 | 12Ohm | 58 dB | 0.31Ohm | BREAK-BEFORE-MAKE | 2:1 | 2V~5.5V | SPDT | 100nA | 6.5pF | 2.6ns, 2.6ns | 7pC | 320m Ω | -58.7dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB457EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib457edkt1ge3-datasheets-8372.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 14 Weeks | 95.991485mg | Unknown | 35mOhm | 6 | yes | EAR99 | Tin | DUAL | NO LEAD | 260 | 6 | 1 | Single | 40 | 2.4W | 1 | Other Transistors | Not Qualified | S-XDSO-N3 | 340 ns | 900ns | 1.9 μs | 3 μs | -9A | 8V | SILICON | DRAIN | SWITCHING | 20V | 20V | -1V | 2.4W Ta 13W Tc | 9A | 25A | P-Channel | 35m Ω @ 4.8A, 4.5V | 1V @ 250μA | 9A Tc | 44nC @ 8V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2521DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 22μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2521dvt1e3-datasheets-5374.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 22μA | 6 | 5.5V | 1.8V | 800mOhm | 6 | yes | ALSO OPERATES WITH 5V | unknown | 1 | e3 | MATTE TIN | 570mW | DUAL | GULL WING | 260 | 3V | 0.95mm | DG2521 | 6 | 1 | 40 | Multiplexer or Switches | 3V | 1 | Not Qualified | 40MHz | 25 ns | 45 ns | Single | SEPARATE OUTPUT | 800mOhm | 51 dB | BREAK-BEFORE-MAKE | NC | 2:1 | 1.8V~5.5V | SPDT | 2nA | 50pF | 25ns, 35ns | 224pC | 60m Ω (Max) | -57dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4435ddyt1ge3-datasheets-8870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 24mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 42 ns | 35ns | 16 ns | 40 ns | -11.4A | 20V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5W Tc | -30V | P-Channel | 1350pF @ 15V | 24m Ω @ 9.1A, 10V | 3V @ 250μA | 11.4A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4052AEN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | -1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg4051aent1e4-datasheets-4533.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 450MHz | Lead Free | 1μA | 16 | Unknown | 12V | 2.7V | 100Ohm | 16 | yes | 2 | YES | 525mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG4052 | 16 | 4 | 40 | 525mW | 2 | Not Qualified | 151 ns | 138 ns | 5V | 3V | Multiplexer | 172 ns | Dual, Single | 2.5V | -3V | 8 | 100Ohm | 67 dB | 3Ohm | BREAK-BEFORE-MAKE | 103ns | 119ns | 2.7V~12V ±2.5V~5V | 4:1 | SP4T | 1nA | 3pF 7pF | 108ns, 92ns | 0.25pC | 3 Ω | -67dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2303ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2303est1ge3-datasheets-1807.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 3 | No | 1.9W | 1 | TO-236 (SOT-23) | 5 ns | 8ns | 8 ns | 12 ns | 2.5A | 20V | 30V | 1.9W Tc | P-Channel | 210pF @ 25V | 170mOhm @ 1.8A, 10V | 2.5V @ 250μA | 2.5A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2736DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2735dnt1e4-datasheets-4508.pdf | 10-UFQFN | 1.8mm | 550μm | 1.4mm | 1μA | 10 | 7.002332mg | 4.3V | 1.65V | 500mOhm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 208mW | QUAD | NO LEAD | 260 | 3V | DG2736 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | Not Qualified | 50MHz | 78 ns | 58 ns | Single | 4 | 2 | 500mOhm | 70 dB | 0.06Ohm | BREAK-BEFORE-MAKE | 60ns | 80ns | 2:1 | 1.65V~4.3V | SPDT | 2nA | 55pF | 78ns, 58ns | 60m Ω | -70dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA817EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia817edjt1ge3-datasheets-3022.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | yes | EAR99 | No | Dual | 6.5W | 20ns | 10 ns | 23 ns | 4.5A | 12V | 30V | 1.9W Ta 6.5W Tc | -30V | P-Channel | 600pF @ 15V | 65m Ω @ 3A, 10V | 1.3V @ 250μA | 4.5A Tc | 23nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3408DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | 0.753mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3408dbt2e1-datasheets-5460.pdf | 16-WFBGA | 2mm | 2mm | Lead Free | 16 | 12V | 2.7V | 7Ohm | 16 | yes | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 719mW | BOTTOM | BALL | 260 | 5V | 0.5mm | DG3408 | 16 | 8 | 40 | 719mW | 1 | 162 ns | 97 ns | 6V | 5V | Multiplexer | 165 ns | Dual, Single | 3V | -5V | 8 | 7Ohm | 3.6Ohm | BREAK-BEFORE-MAKE | 94ns | 2.7V~12V ±3V~6V | 8:1 | 2nA | 21pF 211pF | 70ns, 44ns | 29pC | 3.6 Ω (Max) | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2328DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2328dst1ge3-datasheets-5062.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 250mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 730mW | 1 | FET General Purpose Powers | 150°C | 7 ns | 11ns | 11 ns | 9 ns | 1.15A | 20V | SILICON | 4V | 730mW Ta | 100V | N-Channel | 2 V | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 1.15A Ta | 5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3157DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3157dlt1ge3-datasheets-5486.pdf | 6-TSSOP, SC-88, SOT-363 | 1μA | 6 | 14 Weeks | 5.5V | 1.65V | 15Ohm | 6 | yes | No | 1 | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 3V | DG3157 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 300MHz | 10.2 ns | 10.2 ns | Single | 2 | 1 | 15Ohm | 58 dB | 0.31Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~5.5V | SPDT | 7pF | 25ns, 21ns | 7pC | 800m Ω | -64dB @ 10MHz |
