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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQJ844AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj844aept1ge3-datasheets-7678.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 8A | 30V | 48W | 2 N-Channel (Dual) | 1161pF @ 15V | 16.6m Ω @ 7.6A, 10V | 2.5V @ 250μA | 26nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1405BDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405bdht1e3-datasheets-6571.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | No | 1.47W | 1 | SC-70-6 (SOT-363) | 305pF | 10 ns | 26ns | 7 ns | 16 ns | 1.6A | 8V | 8V | 1.47W Ta 2.27W Tc | P-Channel | 305pF @ 4V | 112mOhm @ 2.8A, 4.5V | 950mV @ 250μA | 1.6A Tc | 5.5nC @ 4.5V | 112 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7949DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7949dpt1e3-datasheets-8969.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 64mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.5W | C BEND | 260 | SI7949 | 8 | Dual | 40 | 1.5W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | -60V | 2 P-Channel (Dual) | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A | 40nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI1471DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1471dht1e3-datasheets-8016.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | 6 | 15 Weeks | 7.512624mg | 70 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1 | Other Transistors | R-PDSO-G6 | 4 ns | 23 ns | 2.8A | 12V | SILICON | SWITCHING | 30V | 30V | 1.5W Ta 2.78W Tc | P-Channel | 445pF @ 15V | 100m Ω @ 2A, 10V | 1.6V @ 250μA | 2.7A Tc | 9.8nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SQJ244EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj244ept1ge3-datasheets-0310.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 40V | 27W Tc 48W Tc | 2 N-Channel (Dual) Asymmetrical | 1200pF @ 25V 2800pF @ 25V | 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V | 2.5V @ 250μA | 20A Tc 60A Tc | 20nC @ 10V, 45nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7703EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7703ednt1e3-datasheets-0864.pdf | PowerPAK® 1212-8 | 6 | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | S-XDSO-C6 | 4 ns | 6ns | 6 ns | 23 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -1V | 1.3W Ta | 4.3A | 20A | 20V | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 4.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI1967DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1967dht1e3-datasheets-1153.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1967 | 6 | Dual | 30 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 27 ns | 15 ns | 1.3A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1A | 0.49Ohm | 2 P-Channel (Dual) | 110pF @ 10V | 490m Ω @ 910mA, 4.5V | 1V @ 250μA | 4nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI8475EDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8475edbt1e1-datasheets-2473.pdf | 4-XFBGA, CSPBGA | 4 | 13 Weeks | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 30 | 1 | Other Transistors | 80 μs | 7.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1.1W Ta 2.7W Tc | 25A | 0.051Ohm | 80 mJ | 20V | P-Channel | 32m Ω @ 1A, 4.5V | 1.5V @ 250μA | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4210DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4210dyt1ge3-datasheets-3574.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | Unknown | 8 | 2.7W | SI4210 | 2 | Dual | 1.78W | 2 | 8-SO | 445pF | 12 ns | 55ns | 8 ns | 1 ns | 6.5A | 20V | 30V | 2.5V | 2.7W | 35.5mOhm | 2 N-Channel (Dual) | 445pF @ 15V | 35.5mOhm @ 5A, 10V | 2.5V @ 250μA | 6.5A | 12nC @ 10V | Logic Level Gate | 35.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7454CDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7454cdpt1ge3-datasheets-2343.pdf | PowerPAK® SO-8 | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 4.1W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 12ns | 10 ns | 17 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1.2V | 4.1W Ta 29.7W Tc | 40A | 0.0305Ohm | N-Channel | 580pF @ 50V | 30.5m Ω @ 10A, 10V | 2.8V @ 250μA | 22A Tc | 19.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI7980DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7980dpt1ge3-datasheets-4445.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 12 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 21.9W | C BEND | 260 | SI7980 | 8 | 2 | Dual | 30 | 3.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 18 ns | 18ns | 10 ns | 25 ns | 8A | 16V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 19.8W 21.9W | 8A | 30A | 20V | 2 N-Channel (Half Bridge) | 1010pF @ 10V | 22m Ω @ 5A, 10V | 2.5V @ 250μA | 27nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SIE816DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie816dft1ge3-datasheets-3162.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Powers | R-XDSO-N4 | 22 ns | 10ns | 10 ns | 25 ns | 19.8A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 60A | 0.0074Ohm | 125 mJ | 60V | N-Channel | 3100pF @ 30V | 7.4m Ω @ 19.8A, 10V | 4.4V @ 250μA | 60A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI6968BEDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1W | GULL WING | 260 | SI6968 | 8 | 2 | Dual | 40 | 1W | 2 | FET General Purpose Power | 245 ns | 330ns | 510 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 20V | 2 N-Channel (Dual) Common Drain | 600 mV | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SIE800DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie800dft1e3-datasheets-6364.pdf | 10-PolarPAK® (S) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 1 | FET General Purpose Powers | R-PDSO-N4 | 15ns | 20.6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 50A | 60A | 0.0072Ohm | 80 mJ | N-Channel | 1600pF @ 15V | 7.2m Ω @ 11A, 10V | 3V @ 250μA | 50A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI7288DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7288dpt1ge3-datasheets-6861.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | Unknown | 19mOhm | 8 | yes | EAR99 | Tin | No | PowerPAKSO-8 | e3 | 15.6W | C BEND | 260 | SI7288 | 8 | 2 | Dual | 40 | 3.6W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 14ns | 10 ns | 16 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 10A | 50A | 5 mJ | 40V | 2 N-Channel (Dual) | 565pF @ 20V | 1.2 V | 19m Ω @ 10A, 10V | 2.8V @ 250μA | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| SUD50N10-18P-E3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n1018pe3-datasheets-3250.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18.5MOhm | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | Single | 30 | 136.4W | 1 | FET General Purpose Power | 12 ns | 10ns | 8 ns | 18 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta 136.4W Tc | 100V | N-Channel | 2600pF @ 50V | 18.5m Ω @ 15A, 10V | 5V @ 250μA | 8.2A Ta 50A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SQ3989EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sq3989evt1ge3-datasheets-9239.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6-TSOP | 30V | 1.67W | 2 P-Channel (Dual) | 155mOhm @ 400mA, 10V | 1.5V @ 250μA | 2.5A Tc | 11.1nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM40N02-12P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum40n0212pe3-datasheets-3291.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 10ns | 9 ns | 24 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3.75W Ta 83W Tc | 90A | 20V | N-Channel | 1000pF @ 10V | 12m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 12nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHG20N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg20n50ce3-datasheets-1322.pdf | TO-247-3 | 3 | 38.000013g | Unknown | 3 | yes | No | SINGLE | 260 | 3 | 1 | 40 | 292W | 1 | FET General Purpose Power | 80 ns | 27ns | 44 ns | 32 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 5V | 250W Tc | TO-247AC | 80A | 0.27Ohm | 500V | N-Channel | 2942pF @ 25V | 5 V | 270m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SUP60N02-4M5P-E3 | Vishay Siliconix | $4.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60n024m5pe3-datasheets-3356.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 5.95nF | 15 ns | 7ns | 8 ns | 35 ns | 60A | 20V | 20V | 3.75W Ta 120W Tc | 4.5mOhm | 20V | N-Channel | 5950pF @ 10V | 4.5mOhm @ 20A, 10V | 3V @ 250μA | 60A Tc | 50nC @ 4.5V | 4.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIZF920DT-T1-GE3 | Vishay Siliconix | $1.25 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf920dtt1ge3-datasheets-5085.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.9W Ta 28W Tc 4.5W Ta 74W Tc | 2 N-Channel (Dual), Schottky | 1300pF @ 15V 5230pF @ 15V | 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 28A Ta 76A Tc 49A Ta 197A Tc | 29nC @ 10V, 125nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-GE3 | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 18 ns | 12ns | 19 ns | 46 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI5513CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 30 | 1.7W | 2 | 19 ns | 40ns | 40 ns | 15 ns | 3.7A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.055Ohm | N and P-Channel | 285pF @ 10V | 55m Ω @ 4.3A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI1315DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1315dlt1ge3-datasheets-8442.pdf | SC-70, SOT-323 | Lead Free | 3 | 15 Weeks | 124.596154mg | No SVHC | 336mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 300mW | 1 | Other Transistors | 10 ns | 15ns | 8 ns | 14 ns | -900mA | 8V | SILICON | SWITCHING | -400mV | 300mW Ta 400mW Tc | 0.9A | -8V | P-Channel | 112pF @ 4V | 336m Ω @ 800mA, 4.5V | 800mV @ 250μA | 900mA Tc | 3.4nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI5457DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5457dct1ge3-datasheets-7495.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | 36mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 2.3W | 1 | 25 ns | 20ns | 12 ns | 30 ns | 6A | 12V | SILICON | SWITCHING | 20V | 5.7W Tc | 6A | -20V | P-Channel | 1000pF @ 10V | 36m Ω @ 4.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 38nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI4404DY-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4404dyt1ge3-datasheets-6289.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 6.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | 2nF | 20 ns | 15ns | 40 ns | 105 ns | 23A | 20V | SILICON | 1.6W Ta | 30V | N-Channel | 1 V | 6.5m Ω @ 23A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI2323CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2323cdst1ge3-datasheets-9133.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 15 ns | 23ns | 12 ns | 40 ns | -4.6A | 8V | SILICON | SWITCHING | 20V | -400mV | 1.25W Ta 2.5W Tc | 6A | -20V | P-Channel | 1090pF @ 10V | -400 mV | 39m Ω @ 4.6A, 4.5V | 1V @ 250μA | 6A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| SUD50N06-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0607lge3-datasheets-4822.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 30 | 136W | 1 | FET General Purpose Powers | 15 ns | 13ns | 14 ns | 62 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 136W Tc | 50A | 60V | N-Channel | 5800pF @ 25V | 7.4m Ω @ 20A, 10V | 3V @ 250μA | 96A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SUD50P06-15-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50p0615ge3-datasheets-0843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 1 | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 150°C | R-PSSO-G2 | 15 ns | 175 ns | -50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 2.5W Ta 113W Tc | 80A | -60V | P-Channel | 4950pF @ 25V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2N6661JAN02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V |
