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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG444DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | 250 ns | 140 ns | 22V | 20V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NC | 5V~36V ±5V~20V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 140ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS484ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqs484enwt1ge3-datasheets-9352.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 12 Weeks | unknown | YES | DUAL | FLAT | 1 | 62.5W | 1 | 175°C | S-PDSO-F5 | 11 ns | 25 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W Tc | 64A | 40V | N-Channel | 1800pF @ 25V | 8m Ω @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG184AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 16 | 30Ohm | 16 | no | 2 | e0 | Tin/Lead (Sn/Pb) | DUAL | 16 | 900mW | Multiplexer or Switches | 2 | Not Qualified | 18V | 10V | 4 | SEPARATE OUTPUT | 30Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4825DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4825ddyt1ge3-datasheets-0870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | No SVHC | 12.5MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.7W | 1 | 48 ns | 92ns | 19 ns | 34 ns | 10.9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.4V | 2.7W Ta 5W Tc | -30V | P-Channel | 2550pF @ 15V | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 14.9A Tc | 86nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG183AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 14 | 10Ohm | 16 | no | Yes | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | DUAL | 16 | 900mW | Multiplexer or Switches | 2 | Not Qualified | 18V | 10V | 4 | SEPARATE OUTPUT | 10Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 10nA | 21pF 17pF | 400ns, 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9520SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9520spbf-datasheets-1890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 600MOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | 6.8A | 20V | 100V | -4V | 3.7W Ta 60W Tc | 600mOhm | P-Channel | 390pF @ 25V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG300AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | TO-100-10 Metal Can | 36V | 13V | 50Ohm | 14 | 2 | 825mW | 2 | TO-100-10 | 22V | 7V | 2 | 2 | 50Ohm | 1:1 | SPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf740pbf-datasheets-2959.pdf | 400V | 10A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 550MOhm | 3 | Tin | No | 1 | Single | 125W | 1 | 150°C | TO-220AB | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 400V | 4V | 125W Tc | 790 ns | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 4 V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG211BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2000 | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 10μA | 16 | 1.627801g | No SVHC | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | 470mW | Multiplexer or Switches | 512/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 200mOhm | 3 | Tin | No | 1 | Single | 150W | 1 | D2PAK | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | -19A | 20V | 100V | -4V | 3.7W Ta 150W Tc | 200mOhm | P-Channel | 1400pF @ 25V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Contains Lead | 10μA | 16 | 547.485991mg | Unknown | 25V | 4.5V | 85Ohm | 16 | no | 4 | 50μA | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | Not Qualified | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA10DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira10dpt1ge3-datasheets-4854.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | FLAT | 1 | Single | 5W | 1 | R-PDSO-F5 | 20 ns | 20 ns | 27 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 5W Ta 40W Tc | 60A | 0.0037Ohm | 20 mJ | 30V | N-Channel | 2425pF @ 15V | 3.7m Ω @ 10A, 10V | 2.2V @ 250μA | 60A Tc | 51nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG384AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg384aak883-datasheets-7766.pdf | 16-CDIP (0.300, 7.62mm) | 18 Weeks | 36V | 13V | 50Ohm | 16 | No | 2 | 16-CERDIP | 22V | 7V | 50Ohm | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 10pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ407EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqj407ept1ge3-datasheets-6234.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 260 | 1 | NOT SPECIFIED | 68W | 1 | 175°C | R-PSSO-G4 | 23 ns | 72 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 68W Tc | 0.0044Ohm | 84 mJ | -30V | P-Channel | 10700pF @ 25V | 4.4m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 260nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDW | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-SOIC (0.295, 7.50mm Width) | 17.91mm | 2.34mm | 7.49mm | 15V | 500μA | 8 Weeks | 792.000628mg | 36V | 7.5V | 60Ohm | 28 | 450mW | 1 | 450mW | 1 | 28-SOIC | 125 ns | 94 ns | 20V | 148 ns | Dual, Single | 5V | 1 | 16 | 60Ohm | 12V ±5V~20V | 16:1 | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR414DP-T1-GE3 | Vishay Siliconix | $3.46 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir414dpt1ge3-datasheets-8405.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.8mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | 5.4W | 1 | R-PDSO-F5 | 33 ns | 22ns | 13 ns | 42 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 5.4W Ta 83W Tc | 33A | 70A | N-Channel | 4750pF @ 20V | 90ns | 77ns | 1 V | 2.8m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 117nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ALDW | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-SOIC (0.295, 7.50mm Width) | 12.8mm | 2.34mm | 7.49mm | 1μA | 20 | 800.987426mg | 40V | 5V | 45Ohm | 20 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 800mW | GULL WING | 20 | 4 | 800mW | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | 8 | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLD110PBF | Vishay Siliconix | $1.42 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irld110pbf-datasheets-9501.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 540mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 250pF | 9.3 ns | 47ns | 47 ns | 16 ns | 1A | 10V | 100V | 2V | 1.3W Ta | 540mOhm | 100V | N-Channel | 250pF @ 25V | 2 V | 540mOhm @ 600mA, 5V | 2V @ 250μA | 1A Ta | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 10 Weeks | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 16 | 2 | DPST | 30 | 600mW | Multiplexer or Switches | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR870DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir870dpt1ge3-datasheets-0386.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-PDSO-C5 | 8 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100V | 1.2V | 6.25W Ta 104W Tc | N-Channel | 2840pF @ 50V | 6m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 84nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | /files/vishay-dg409ake3-datasheets-8655.pdf | 16-DIP (0.300, 7.62mm) | 19.305mm | Lead Free | 16 | 44V | 13V | 100Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | DUAL | 15V | 16 | 4 | DIFFERENTIAL MULTIPLEXER | 900mW | Multiplexer or Switches | 2 | 20V | 5V | -15V | 8 | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 150ns | 12V ±5V~20V | 0.03A | 4:1 | SP4T | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1427EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1427edht1ge3-datasheets-2494.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 14 Weeks | No SVHC | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | 1.56W | 1 | Other Transistors | 90 ns | 400ns | 2.3 μs | 5.2 μs | 2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | -400mV | 1.56W Ta 2.8W Tc | 2A | -20V | P-Channel | 64m Ω @ 3A, 4.5V | 1V @ 250μA | 2A Tc | 21nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | 12V | 2.7V | 17Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 650mW | GULL WING | 240 | 5V | 1.27mm | 16 | 1 | 30 | 650mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA58ADP-T1-RE3 | Vishay Siliconix | $1.14 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira58adpt1re3-datasheets-3365.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 5W Ta 56.8W Tc | N-Channel | 3030pF @ 20V | 2.65mOhm @ 15A, 10V | 2.4V @ 250μA | 32.3A Ta 109A Tc | 61nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | No | 2 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 2 | 600mW | Multiplexer or Switches | SPDT | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | 4 | 45Ohm | 35Ohm | BREAK-BEFORE-MAKE | 5V~34V ±5V~17V | 1:1 | SPST - NO/NC | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | 3 Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4153EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq4153eyt1ge3-datasheets-3793.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 7.1W | 1 | 175°C | R-PDSO-G8 | 31 ns | 310 ns | -25A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 12V | 7.1W Tc | 0.00832Ohm | 3600 pF | -12V | P-Channel | 11000pF @ 6V | 8.32m Ω @ 14A, 4.5V | 900mV @ 250μA | 25A Tc | 151nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2523DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg2523dnt1ge4-datasheets-8508.pdf | 16-VFQFN Exposed Pad | 3mm | 16 | 19 Weeks | unknown | 1 | YES | QUAD | NO LEAD | 3V | 0.5mm | 5.5V | 4 | 2 | S-XQCC-N16 | 310MHz | 550mOhm | 82 dB | 0.05Ohm | 3000ns | 70000ns | 2:2 | 1.8V~5.5V | DPDT | 1nA | 60μs, 1μs | -19pC | 50m Ω | -61dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR120DP-T1-RE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir120dpt1re3-datasheets-4197.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5.4W Ta 100W Tc | N-Channel | 4150pF @ 40V | 3.55mOhm @ 15A, 10V | 3.5V @ 250μA | 24.7A Ta 106A Tc | 94nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG449DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 20μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg449dst1e3-datasheets-9078.pdf | SOT-23-8 | 2.9mm | 1.45mm | 1.65mm | Lead Free | 20μA | 8 | 10 Weeks | 40.001177mg | No SVHC | 36V | 7V | 45Ohm | 8 | yes | Tin | No | 1 | 4μA | e3 | Non-Inverting | 675mW | GULL WING | 260 | 15V | 0.65mm | DG449 | 8 | 1 | 10 | 675mW | Multiplexer or Switches | 1 | 85°C | 146 ns | 104 ns | 20V | Dual, Single | 4.5V | -15V | 30mA | 3 | 45Ohm | 38Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | NC | 7V~36V ±4.5V~20V | 2:1 | SPDT | 1nA | 8pF | 146ns, 104ns | 5pC | 5 Ω (Max) | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sihu5n50dge3-datasheets-4568.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 8 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 1 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 104W Tc | 28.8 mJ | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V |
