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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | FET Technology | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIB911DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib911dkt1e3-datasheets-4835.pdf | PowerPAK® SC-75-6L Dual | Lead Free | 6 | Unknown | 295mOhm | 6 | yes | EAR99 | No | 3.1W | 260 | SIB911 | 6 | Dual | 40 | 1.1W | 2 | Other Transistors | 12 ns | 45ns | 31 ns | 10 ns | -2.6A | 8V | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 1.5A | 20V | 2 P-Channel (Dual) | 115pF @ 10V | -1 V | 295m Ω @ 1.5A, 4.5V | 1V @ 250μA | 2.6A | 4nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4052EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.8mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-WFQFN | Lead Free | 16 | 16 Weeks | 78Ohm | unknown | 1 | YES | QUAD | NO LEAD | NOT SPECIFIED | 5V | 0.4mm | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | R-XQCC-N16 | 353MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 4:1 | SP4T | 1nA | 2.2pF 4.8pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF918DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf918dtt1ge3-datasheets-9699.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 3.7W Ta 50W Tc | 2 N-Channel (Dual), Schottky | 1060pF 2650pF @ 15V | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V | 2.4V @ 250μA, 2.3V @ 250μA | 23A Ta 40A Tc 35A Ta 60A Tc | 22nC, 56nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg442bdyt1e3-datasheets-1247.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 1μA | 16 | 13 Weeks | 25V | 13V | 90Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 900mW | GULL WING | 260 | 15V | 1.27mm | DG442 | 16 | 1 | 30 | 900mW | Multiplexer or Switches | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 120ns | 220ns | NC | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4214dyt1ge3-datasheets-1312.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 186.993455mg | 23.5mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | 13 ns | 11ns | 9 ns | 18 ns | 6.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 785pF @ 15V | 23.5m Ω @ 7A, 10V | 2.5V @ 250μA | 8.5A | 23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG456EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg455eqt1e3-datasheets-7819.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 100μA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 5V | 1.27mm | DG456 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 4 | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 4Ohm | 60 dB | 0.12Ohm | BREAK-BEFORE-MAKE | 112ns | 1:1 | SPST - NO/NC | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3588DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3588dvt1e3-datasheets-4374.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3588 | 6 | Dual | 30 | 830mW | 2 | Other Transistors | 2.5A | 8V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 450mV | 830mW 83mW | 0.08Ohm | 20V | N and P-Channel | 450 mV | 80m Ω @ 3A, 4.5V | 450mV @ 250μA (Min) | 2.5A 570mA | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 500μA | 28 | 12 Weeks | 1.182714g | 36V | 7.5V | 100Ohm | 28 | yes | Tin | unknown | 1 | e3 | 450mW | QUAD | J BEND | 260 | 15V | DG406 | 28 | 16 | 40 | 450mW | 1 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 163 ns | Dual, Single | 5V | -15V | 30mA | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 16:1 | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4913DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4913dyt1e3-datasheets-4507.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4913 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 32 ns | 42ns | 160 ns | 350 ns | 9.4A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 7.1A | 0.015Ohm | -20V | 2 P-Channel (Dual) | 15m Ω @ 9.4A, 4.5V | 1V @ 500μA | 7.1A | 65nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg308bdye3-datasheets-1370.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 22V | 1μA | 16 | 13 Weeks | 665.986997mg | Unknown | 44V | 4V | 85Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG308 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | +-15/12V | SPST | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5980DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5980dut1ge3-datasheets-2041.pdf | PowerPAK® ChipFET™ Dual | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 7.8W | 260 | SI5980 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | R-XDSO-N6 | 8 ns | 11ns | 9 ns | 8 ns | 2.5A | 20V | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 0.567Ohm | 100V | 2 N-Channel (Dual) | 78pF @ 50V | 567m Ω @ 400mA, 10V | 4V @ 250μA | 3.3nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg200bdje3-datasheets-2765.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | Lead Free | 50μA | 14 | 12 Weeks | 1.620005g | 36V | 13V | 85Ohm | 14 | yes | No | 2 | 50μA | e3 | Matte Tin (Sn) | 470mW | 15V | DG200 | 14 | 1 | 470mW | Multiplexer or Switches | SPST | 1 μs | 425 ns | 22V | 15V | Dual | 7V | -15V | 2 | SEPARATE OUTPUT | 85Ohm | 90 dB | BREAK-BEFORE-MAKE | 1000ns | NC | 1:1 | SPST - NC | ±15V | 2nA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3983DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3983dvt1e3-datasheets-4446.pdf | SOT-23-6 Thin, TSOT-23-6 | 19.986414mg | 6 | 830mW | SI3983 | 2 | Dual | 6-TSOP | 2.1A | 8V | 20V | 830mW | 110mOhm | -20V | 2 P-Channel (Dual) | 110mOhm @ 2.5A, 4.5V | 1.1V @ 250μA | 2.1A | 7.5nC @ 4.5V | Logic Level Gate | 110 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LEDY-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg442ledyt1ge3-datasheets-7337.pdf | 16-SOIC (0.154, 3.90mm Width) | 18 Weeks | 26Ohm | NOT SPECIFIED | NOT SPECIFIED | 4 | 26Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 6.6pC | 100m Ω | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4943bdyt1e3-datasheets-9089.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 32 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 11 ns | 10ns | 10 ns | 94 ns | -8.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 1.1W | 6.3A | 0.019Ohm | 2 P-Channel (Dual) | 19m Ω @ 8.4A, 10V | 3V @ 250μA | 6.3A | 25nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419LEDY-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg419ledqt1ge3-datasheets-7465.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | 1 | 8-SO | 18Ohm | 3V~16V ±3V~8V | 1:1 | SPDT | 10nA | 6pF 20pF | 40ns, 35ns | 26pC | -72dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5905DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5905dct1ge3-datasheets-2292.pdf | 8-SMD, Flat Lead | No | 1.1W | SI5905 | 1206-8 ChipFET™ | 10 ns | 45ns | 10 ns | 30 ns | 3A | 8V | 8V | 1.1W | 2 P-Channel (Dual) | 90mOhm @ 3A, 4.5V | 450mV @ 250μA (Min) | 3A | 9nC @ 4.5V | Logic Level Gate | 90 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 4.4mm | 16 | 20 Weeks | 23Ohm | 16 | 1 | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 0.65mm | 8 | SINGLE-ENDED MULTIPLEXER | 30 | 1 | -5V | 23Ohm | 80ns | 3V~16V ±3V~8V | 8:1 | 1nA | 5.5pF 25pF | 72ns, 47ns | -11pC | 1 Ω | -98dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5515DC-T1-GE3 | Vishay Siliconix | $0.51 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5515dct1e3-datasheets-4608.pdf | 8-SMD, Flat Lead | 15 Weeks | 8 | No | 1.1W | SI5515 | 1206-8 ChipFET™ | 3A | 8V | 20V | 1.1W | N and P-Channel | 40mOhm @ 4.4A, 4.5V | 1V @ 250μA | 4.4A 3A | 7.5nC @ 4.5V | Logic Level Gate | 40 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2591DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/vishaysiliconix-dg2591dnt1ge4-datasheets-8012.pdf | 6-UFDFN | 16 Weeks | unknown | AUDIO/VIDEO SWITCH | 1 | 1:1 | 1μA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5943DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5943dut1e3-datasheets-4651.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | Lead Free | 64mOhm | 8.3W | SI5943 | 2 | Dual | PowerPAK® ChipFet Dual | 460pF | 5 ns | 15ns | 7 ns | 23 ns | -6A | 8V | 12V | 8.3W | 64mOhm | 2 P-Channel (Dual) | 460pF @ 6V | 64mOhm @ 3.6A, 4.5V | 1V @ 250μA | 6A | 15nC @ 8V | Logic Level Gate | 64 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG722DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | ROHS3 Compliant | 2010 | /files/vishaysiliconix-dg723dqt1ge3-datasheets-5589.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3mm | 950μm | 3.1mm | 2μA | 8 | 12 Weeks | 139.989945mg | Unknown | 5.5V | 1.8V | 4.5Ohm | 8 | VIDEO APPLICATION | No | 2 | e4 | 320mW | DUAL | GULL WING | 3V | 0.65mm | DG722 | 8 | 1 | Multiplexer or Switches | 3/5V | 2 | 366MHz | SPST | 30 ns | 35 ns | Single | SEPARATE OUTPUT | 4.5Ohm | 47 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | 55ns | NC | 1:1 | 1.8V~5.5V | SPST - NC | 250pA | 8pF 9pF | 30ns, 35ns | 2.2pC | 200m Ω | -90dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7901EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7901ednt1e3-datasheets-2349.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 48mOhm | e3 | PURE MATTE TIN | 1.3W | 260 | 2 | Dual | 30 | Other Transistors | 2.5 μs | 4μs | 12 μs | 15 μs | 4.3A | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | 1.2mm | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 15 Weeks | 25V | 4.5V | 160Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | GULL WING | 260 | 15V | 0.65mm | DG212 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | Not Qualified | SPST | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 200ns | 300ns | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA911DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911djt1e3-datasheets-4827.pdf | PowerPAK® SC-70-6 Dual | 6 | No | 6.5W | SIA911 | Dual | 1.9W | 2 | PowerPAK® SC-70-6 Dual | 355pF | 10ns | 10 ns | 20 ns | -4.5A | 8V | 20V | 6.5W | 94mOhm | 20V | 2 P-Channel (Dual) | 355pF @ 10V | 94mOhm @ 2.8A, 4.5V | 1V @ 250μA | 4.5A | 12.8nC @ 8V | Standard | 94 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 10 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | 15V | 2.54mm | DG419 | 8 | 1 | Multiplexer or Switches | 1 | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7940DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 17mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 7.6A | 8V | SILICON | DRAIN | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG452EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 500nA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | 1nA | e3 | MATTE TIN | 600mW | GULL WING | 260 | 5V | 1.27mm | DG452 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 4Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | NO | 1:1 | SPST - NO | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3443BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3443bdvt1e3-datasheets-3274.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 990.6μm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 60mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 22 ns | 35ns | 25 ns | 45 ns | 3.6A | 12V | SILICON | 20V | -1.4V | 1.1W Ta | -20V | P-Channel | -1.4 V | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LEDJ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-PowerDIP (0.300, 7.62mm) | 16 Weeks | 26Ohm | 16 | 4 | 16-PDIP | 26Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz |
