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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG405DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg403dje3-datasheets-0863.pdf | 16-DIP (0.300, 7.62mm) | 19.43mm | 4.45mm | 7.87mm | 15V | Lead Free | 1μA | 16 | 12 Weeks | 1.627801g | 36V | 13V | 55Ohm | 16 | yes | No | 2 | 10nA | e3 | Matte Tin (Sn) | 450mW | 265 | 15V | DG405 | 16 | 2 | 40 | 450mW | Multiplexer or Switches | 2 | DPST, SPDT | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4816DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4816dyt1ge3-datasheets-2280.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 22MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | 40 | 7.7W | 2 | FET General Purpose Power | 15 ns | 5ns | 12 ns | 44 ns | 5.3A | 20V | SILICON | COMPLEX | METAL-OXIDE SEMICONDUCTOR | 1W 1.25W | 30V | 2 N-Channel (Half Bridge) | 2 V | 22m Ω @ 6.3A, 10V | 2V @ 250μA | 5.3A 7.7A | 12nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9411DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9411dlt1e3-datasheets-6511.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 1μA | 6 | 14 Weeks | 28.009329mg | No SVHC | 5.5V | 2.25V | 12Ohm | 6 | yes | Tin | No | 1 | 10nA | e3 | Non-Inverting | 250mW | DUAL | GULL WING | 260 | 2.5V | DG9411 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 11 ns | 7 ns | Single | 2 | 50mA | 1 | 12Ohm | 12Ohm | 73 dB | BREAK-BEFORE-MAKE | 45ns | 2:1 | 2.25V~5.5V | SPDT | 1nA | 7pF 20pF | 11ns, 7ns | 10pC | -70dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ962EP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj962ept1ge3-datasheets-6203.pdf | PowerPAK® SO-8 Dual | Lead Free | 4 | Unknown | 60mOhm | 8 | yes | EAR99 | No | 25W | SINGLE | GULL WING | 260 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-PSSO-G4 | 5 ns | 11ns | 6 ns | 16 ns | 8A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 8A | 5 mJ | 2 N-Channel (Dual) | 475pF @ 25V | 60m Ω @ 4.3A, 10V | 2.5V @ 250μA | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-DIP (0.300, 7.62mm) | 19.43mm | 4.45mm | 7.87mm | 15V | 1μA | 16 | 8 Weeks | 1.627801g | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | 450mW | 16 | 450mW | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 45Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4128DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4128dyt1ge3-datasheets-4479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 5 ns | 10ns | 10 ns | 15 ns | 10.9A | 20V | SILICON | SWITCHING | 30V | 30V | 2.4W Ta 5W Tc | 0.024Ohm | N-Channel | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 10.9A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | Not Qualified | 41 ns | 32 ns | 6V | Dual, Single | 3V | 2 | 1 | 20Ohm | 35Ohm | BREAK-BEFORE-MAKE | 75ns | NO/NC | 2.7V~12V ±3V~6V | 2:1 | SPDT | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH617DN-T1-GE3 | Vishay Siliconix | $0.80 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish617dnt1ge3-datasheets-8132.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 52W Tc | P-Channel | 1800pF @ 15V | 12.3mOhm @ 13.9A, 10V | 2.5V @ 250μA | 13.9A Ta 35A Tc | 59nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 100μA | 16 | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 900mW | GULL WING | 15V | 1.27mm | 16 | 900mW | Multiplexer or Switches | Not Qualified | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS435DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis435dntt1ge3-datasheets-8943.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | unknown | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 3.7W | 1 | S-PDSO-C5 | 30ns | 30 ns | 100 ns | 30A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 3.7W Ta 39W Tc | 0.0054Ohm | 20 mJ | -20V | P-Channel | 5700pF @ 10V | 5.4m Ω @ 13A, 4.5V | 900mV @ 250μA | 30A Tc | 180nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG190AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg190ap883-datasheets-7597.pdf | 16-DIP (0.300, 7.62mm) | 30Ohm | 16 | 2 | 900mW | 2 | 16-DIP | 18V | 10V | 4 | 4 | 30Ohm | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7114ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7114adnt1ge3-datasheets-9992.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | FET General Purpose Powers | S-XDSO-C5 | 20 ns | 14ns | 10 ns | 20 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3V | 3.7W Ta 39W Tc | 35A | 60A | 0.0075Ohm | 45 mJ | N-Channel | 1230pF @ 15V | 7.5m Ω @ 18A, 10V | 2.5V @ 250μA | 35A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2002DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2002dlt1ge3-datasheets-7638.pdf | 6-TSSOP, SC-88, SOT-363 | 1 | SC-70-6 | 7.8Ohm | 2:1 | 1.8V~5.5V | SPDT | 1nA | 5pF | 8ns, 6ns | 5pC | -69dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf730pbf-datasheets-1564.pdf | 400V | 5.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1Ohm | 3 | No | 55A | 400V | 1 | Single | 74W | 1 | TO-220AB | 700pF | 10 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | 400V | 4V | 74W Tc | 530 ns | 1Ohm | 400V | N-Channel | 700pF @ 25V | 4 V | 1Ohm @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 16 | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 16 | 900mW | Multiplexer or Switches | +-15V | 22V | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 100mOhm | BREAK-BEFORE-MAKE | 300ns | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd9024pbf-datasheets-2543.pdf | -60V | -1.6A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | No SVHC | 280mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 570pF | 13 ns | 68ns | 68 ns | 15 ns | -1.6A | 20V | 60V | -4V | 1.3W Ta | 200 ns | 280mOhm | 60V | P-Channel | 570pF @ 25V | 280mOhm @ 960mA, 10V | 4V @ 250μA | 1.6A Ta | 19nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG300AAA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg300aak883-datasheets-7683.pdf | TO-100-10 Metal Can | 36V | 13V | 50Ohm | 10 | No | 2 | 450mW | 2 | TO-100-10 | 22V | 7V | 2 | 2 | 50Ohm | 1:1 | SPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp450apbf-datasheets-3784.pdf | 500V | 14A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | No | e3 | MATTE TIN | 3 | 1 | Single | 190W | 1 | 15 ns | 36ns | 29 ns | 35 ns | 14A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 56A | 760 mJ | 500V | N-Channel | 2038pF @ 25V | 4 V | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG306BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg306bdj-datasheets-7728.pdf | 14-DIP (0.300, 7.62mm) | no | 14 | 2 | 50Ohm | 2:1 | DPST - NO | ±15V | 5nA | 14pF 14pF | 110ns, 70ns (Typ) | 30pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3483CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3483cdvt1ge3-datasheets-4261.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 10 ns | 15ns | 10 ns | 30 ns | -8A | 20V | SILICON | SWITCHING | 30V | 30V | -3V | 2W Ta 4.2W Tc | 8A | 0.034Ohm | P-Channel | 1000pF @ 15V | -3 V | 34m Ω @ 6.1A, 10V | 3V @ 250μA | 8A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308ADY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg309dy-datasheets-7535.pdf | 16-SOIC (0.154, 3.90mm Width) | 15V | 10μA | 10 Weeks | 36V | 13V | 100Ohm | No | 1nA | 600mW | 4 | 16-SOIC | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | 100Ohm | 1:1 | SPST - NO | ±15V | 1nA | 11pF 8pF | 200ns, 150ns | -10pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ443EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj443ept1ge3-datasheets-5887.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 83W Tc | P-Channel | 2030pF @ 20V | 29mOhm @ 18A, 10V | 2.5V @ 250μA | 40A Tc | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 16 | 2 | SPDT | 30 | 600mW | Multiplexer or Switches | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | 1:1 | SPST - NO/NC | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7818DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7818dnt1e3-datasheets-8452.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 135MOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 25 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 2.2A | 4 mJ | 150V | N-Channel | 4 V | 135m Ω @ 3.4A, 10V | 4V @ 250μA | 2.2A Ta | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg409dj-datasheets-7506.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 36V | Contains Lead | 500μA | 16 | 6 Weeks | 547.485991mg | 44V | 13V | 100Ohm | 16 | no | No | 1 | 10μA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 600mW | Multiplexer or Switches | 1 | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 8 | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.2Ohm | 3 | No | 1 | Single | 43W | 1 | 175°C | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | -2V | 43W Tc | 160 ns | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | -4 V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | YES | 600mW | GULL WING | 240 | 15V | 16 | 1 | 30 | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD220PBF | Vishay Siliconix | $2.78 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd220pbf-datasheets-0078.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4-DIP, Hexdip, HVMDIP | 200V | 1W Ta | N-Channel | 260pF @ 25V | 800mOhm @ 480mA, 10V | 4V @ 250μA | 800mA Ta | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-CDIP (0.300, 7.62mm) | 14 Weeks | 4 | 16-CERDIP | 35Ohm | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7123DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7123dnt1ge3-datasheets-1880.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 12 Weeks | Unknown | 10.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 25 ns | 88ns | 88 ns | 82 ns | -25A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 1.5W Ta | 40A | -20V | P-Channel | 3729pF @ 10V | 10.6m Ω @ 15A, 4.5V | 1V @ 250μA | 10.2A Ta | 90nC @ 4.5V | 1.8V 4.5V | ±8V |
