Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Factory Lead Time | Number of Pins | Interface | Impedance | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Tolerance | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Base Part Number | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Supplier Device Package | Input Capacitance | Data Rate | Max Output Voltage | Output Voltage | Oscillator Type | Number of I/O | Peripherals | RAM Size | Forward Current | Output Type | Voltage - Load | Max Input Current | Optoelectronic Device Type | Forward Current-Max | On-State Current-Max | Rise Time | Continuous Drain Current (ID) | Max Reverse Leakage Current | Zener Voltage | Logic Function | Configuration | Test Current | Function | Speed | Output Configuration | Voltage - Isolation | Power - Max | Reverse Breakdown Voltage | ESD Protection | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Forward (Vf) (Typ) | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Output Current per Channel | Current - Output / Channel | Voltage - Output (Max) | Impedance-Max | Current - Output | Core Processor | Program Memory Type | Core Size | Program Memory Size | Connectivity | Data Converter | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Voltage - Breakdown (V(BR)GSS) | Current Drain (Id) - Max | Current - Drain (Idss) @ Vds (Vgs=0) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Motor Type - Stepper | Step Resolution | Motor Type - AC, DC | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mfr |
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TLP785(D4GR-F6,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~110°C | 1 (Unlimited) | DC | RoHS Compliant | 4-DIP (0.300, 7.62mm) | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 100% @ 5mA | 300% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2903,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 70 @ 10mA, 5V | 200MHz | 300mV @ 250μA, 5mA | 22kOhms | 22kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP781F(D4-Y-LF7,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | 1 (Unlimited) | DC | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-SMD, Gull Wing | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 50% @ 5mA | 150% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2910,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 120 @ 1mA, 5V | 200MHz | 300mV @ 250μA, 5mA | 4.7kOhms | - | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
6N136F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-6n136f-datasheets-9563.pdf | 8-DIP (0.300, 7.62mm) | 16 Weeks | TTL COMPATIBLE, UL RECOGNIZED | unknown | NO | 6N136 | 1 | 1 | Optocoupler - Transistor Outputs | 1 MBps | Transistor with Base | LOGIC IC OUTPUT OPTOCOUPLER | 0.025A | 0.008A | SINGLE | 2500Vrms | 1.65V | 25mA | 8mA | 15V | 19% @ 16mA | 200ns, 500ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2906,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 80 @ 10mA, 5V | 200MHz | 300mV @ 250μA, 5mA | 4.7kOhms | 47kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP504A(GB,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp504af-datasheets-3743.pdf | 8-DIP (0.300, 7.62mm) | Lead Free | 8 | Gold, Tin | No | 250mW | 250mW | 2 | 55V | 55V | 60mA | Transistor | 60mA | 2μs | 2500Vrms | 5V | 400mV | 55V | 50mA | 1.15V | 2μs 3μs | 50mA | 50mA | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4990FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 120 @ 1mA, 5V | 250MHz, 200MHz | 300mV @ 250μA, 5mA | 4.7kOhms | - | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMP91FY22FG | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TLCS-900/L1 | Surface Mount | -20°C~70°C TA | Tray | 3 (168 Hours) | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tmp91fy22fg-datasheets-2628.pdf | 100-BQFP | TMP91 | 100-QFP (14x20) | Internal | 81 | DMA | 16K x 8 | 27MHz | 900/L1 | FLASH | 16-Bit | 256KB 256K x 8 | EBI/EMI, IrDA, UART/USART | A/D 8x10b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1107,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 10 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK208-GR(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | 3 | No | 100mW | Single | SC-59 | 8.2pF | 6.5mA | 100mW | N-Channel | 8.2pF @ 10V | 400mV @ 100nA | 50V | 6.5mA | 2.6mA @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2903FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 70 @ 10mA, 5V | 200MHz | 300mV @ 250μA, 5mA | 22kOhms | 22kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ30(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-123F | 12 Weeks | 2 | No | ±10% | 700mW | Single | 10μA | 30V | 30Ohm | 10μA @ 21V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1402,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 50 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 10 kOhms | 10 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRY75(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-crz47te85lqm-datasheets-4095.pdf | SOD-123F | 2 | 30Ohm | ±10% | 700mW | CRY7V5 | Single | 10μA | 7.5V | 10mA | No | 30Ohm | 10μA @ 4.5V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1904FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 80 @ 10mA, 5V | 250MHz | 300mV @ 250μA, 5mA | 47kOhms | 47kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB6569FG,8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Bi-CMOS | RoHS Compliant | 2014 | /storage/upload/FEILIDI-TB6569FG8EL.pdf | 16-BSOP (0.252, 6.40mm Width) + 2 Heat Tabs | 17 Weeks | Parallel, PWM | General Purpose | 10V~45V | 10V~45V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (2) | 1.5A | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1102MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-723 | VESM | 150 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 50 @ 10mA, 5V | 300mV @ 500μA, 5mA | 10 kOhms | 10 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62216FG,C,8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | RoHS Compliant | 2012 | 28-BSOP (0.346, 8.80mm Width) + 2 Heat Tabs | 12 Weeks | PWM | General Purpose | 4.75V~5.25V | 28-HSOP | 10V~38V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2A | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4909FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 70 @ 10mA, 5V | 200MHz, 250MHz | 300mV @ 250μA, 5mA | 47kOhms | 22kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TC78H670FTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | DMOS | 16-VFQFN Exposed Pad | 16 Weeks | Serial | General Purpose | 1.5V~5.5V | 2.5V~16V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2A | Bipolar | 1, 1/2 | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TDTA124E,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 56 @ 5mA, 5V | 250 MHz | 300mV @ 500μA, 10mA | 22 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67S511FTAG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~85°C TA | Tape & Reel (TR) | Power MOSFET | RoHS Compliant | 36-WFQFN Exposed Pad | 17 Weeks | PWM | General Purpose | 2V~5.5V | 10V~35V | Driver - Fully Integrated, Control and Power Stage | Pre-Driver - Half Bridge (4) | 2A | Bipolar | 1, 1/2, 1/4 | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67H410NG | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -20°C~150°C TJ | Tube | Not Applicable | BiCDMOS | RoHS Compliant | 24-SDIP (0.300, 7.62mm) | 12 Weeks | Parallel, PWM | General Purpose | 4.75V~5.25V | 10V~47V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 5A | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62208FTG,8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | DMOS | RoHS Compliant | 2012 | 48-VFQFN Exposed Pad | Parallel | General Purpose | 4.5V~5.5V | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 1.8A | Bipolar | 1, 1/2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62212FTAG,C8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | Power MOSFET | RoHS Compliant | 2014 | 48-VFQFN Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.5V~5.5V | 48-QFN (7x7) | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (8) | 2A | Bipolar | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62208FNG,C8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | DMOS | RoHS Compliant | 2007 | 48-TFSOP (0.240, 6.10mm Width) Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.5V~5.5V | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 1.8A | Bipolar | 1, 1/2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62213AFG,8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2015 | 28-BSOP (0.346, 8.80mm Width) + 2 Heat Tabs | Parallel | General Purpose | 4.75V~5.25V | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2.4A | Bipolar | 1, 1/2, 1/4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62213AFNG,C8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2015 | 48-TFSOP (0.240, 6.10mm Width) Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2.4A | Bipolar | 1, 1/2, 1/4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67S269FTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | RoHS Compliant | 2014 | 48-WFQFN Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~47V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2A | Bipolar | 1 ~ 1/32 |
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