Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | Capacitance @ Frequency | Feature | Applications | Reference Standard | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Memory Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Working Voltage | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | FET Technology | Power - Max | Diode Element Material | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Peak Pulse Power | Max Breakdown Voltage | Direction | Bidirectional Channels | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Independent Circuits | Drain Current-Max (Abs) (ID) | On-State Resistance (Max) | Drain to Source Resistance | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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2SA1837,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1020-O,T6CSF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1428-Y,T2F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1428ot2clafm-datasheets-1005.pdf | SC-71 | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1930(LBS2MATQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | /files/toshibasemiconductorandstorage-2sa1930qj-datasheets-1011.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 180V | 2A | 5μA ICBO | PNP | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB1457(T6DW,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sb1457t6cnoaf-datasheets-1081.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 100V | 2A | 10μA ICBO | PNP | 2000 @ 1A 2V | 50MHz | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2229-Y(T6MIT1FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2383-Y(T6DNS,FM | Toshiba Semiconductor and Storage | $0.09 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2383yt6kehfm-datasheets-1139.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 160V | 1A | 1μA ICBO | NPN | 60 @ 200mA 5V | 100MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2229-Y(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2655-Y,T6WNLF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4793,HFEF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4793,NSEIKIF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3669-Y(T2OMI,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3669yt2pasfm-datasheets-1221.pdf | SC-71 | 1W | 80V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB1457,T6YMEF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sb1457t6cnoaf-datasheets-1081.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 100V | 2A | 10μA ICBO | PNP | 2000 @ 1A 2V | 50MHz | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1586SU-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | SC-70, SOT-323 | 3 | LOW NOISE | unknown | AEC-Q101 | 100mW | DUAL | GULL WING | 2SA1586 | 1 | R-PDSO-G3 | 80MHz | SILICON | SINGLE | AMPLIFIER | PNP | 100mW | 50V | 50V | 300mV | 150mA | 80MHz | -5V | 70 | 100nA ICBO | PNP | 70 @ 2mA 6V | 300mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3074-Y(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3074oq-datasheets-0392.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1W | 50V | 5A | 1μA ICBO | NPN | 120 @ 1A 1V | 120MHz | 400mV @ 150mA, 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD2257(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TC7USB40FT(EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2013 | 14-TSSOP (0.173, 4.40mm Width) | 12 Weeks | 14 | USB 2.0 | USB | 2 | 1.5GHz | Single | 1 | 14Ohm | 2:1 | 2.3V~4.3V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HDEPV10GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG06ACA | 5°C~55°C | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 10TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6P15FU,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 200mW Ta | 2 P-Channel (Dual) | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 1.7V @ 100μA | 100mA | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6P54TU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW Ta | 2 P-Channel (Dual) | 331pF @ 10V | 228m Ω @ 600mA, 2.5V | 1V @ 1mA | 1.2A Ta | 7.7nC @ 4V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6P49NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 16 Weeks | 6 | unknown | 1W | 1W | 2 | 4A | 12V | 20V | -20V | 2 P-Channel (Dual) | 480pF @ 10V | 45m Ω @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH2900ENH,L1Q | Toshiba Semiconductor and Storage | $2.45 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 20 ns | 8ns | 12 ns | 36 ns | 33A | 20V | 200V | 78W Tc | N-Channel | 2200pF @ 100V | 29m Ω @ 16.5A, 10V | 4V @ 1mA | 33A Ta | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J507NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 12 Weeks | 10A | 30V | 1.25W Ta | P-Channel | 1150pF @ 15V | 20m Ω @ 4A, 10V | 2.2V @ 250μA | 10A Ta | 20.4nC @ 4.5V | 4V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K35AFS,LF | Toshiba Semiconductor and Storage | $0.19 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | SC-75, SOT-416 | 12 Weeks | 20V | 500mW Ta | N-Channel | 36pF @ 10V | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF2S16FS,L3M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s16fsl3m-datasheets-2703.pdf | SOD-923 | 12 Weeks | EAR99 | 10pF @ 1MHz | General Purpose | No | 15.3V | 12V Max | 1 | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N37FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-563, SOT-666 | 16 Weeks | yes | 150mW | 150mW | 250mA | 10V | 20V | 20V | 2 N-Channel (Dual) | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF2B5M4SL,L3F | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | AVALANCHE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b5m4sll3f-datasheets-3848.pdf | 0201 (0603 Metric) | 300FF | 2 | 12 Weeks | 2 | EAR99 | 0.2pF @ 1MHz | General Purpose | DUAL | Single | 1 | 3.6V | SILICON | No | 4V | 2A 8/20μs | 3.6V Max | 24V | 2A | 3.6V | 30W | Bidirectional | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8203(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 360mW | 1.48W | 15ns | 9 ns | 4.7A | 20V | 40V | 40mOhm | 40V | 2 N-Channel (Dual) | 2.5V @ 1mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF3A6.8UFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a68ufulf-datasheets-9194.pdf | SC-70, SOT-323 | 2.5pF | 12 Weeks | 3 | 2.5pF @ 1MHz | General Purpose | Dual | 5V | No | 5V Max | 2 | 5V | Unidirectional | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N7002BFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | unknown | 300mW | GULL WING | SSM6N7002 | 150mW | 2 | R-PDSO-G6 | 200mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.2A | 60V | 2 N-Channel (Dual) | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | Logic Level Gate |
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