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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | Number of Pins | ECCN Code | Radiation Hardening | Reach Compliance Code | Capacitance @ Frequency | Applications | Polarity | Composition | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Memory Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Breakdown Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Peak Pulse Power | Max Breakdown Voltage | Number of Unidirectional Channels | Bidirectional Channels | Reference Voltage | Voltage Tol-Max | Working Test Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Collector Cutoff (Max) | Transistor Type | Nominal Vgs | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SC2229-Y(MIT1,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6040(TPF2,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc6040t2qj-datasheets-1199.pdf | SC-71 | 1W | 800V | 1A | 100μA ICBO | NPN | 60 @ 100mA 5V | 1V @ 100mA, 800mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5549,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5549t6fj-datasheets-1222.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 400V | 1A | 100μA ICBO | NPN | 20 @ 40mA 5V | 1V @ 25mA, 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2655-Y(T6ND2,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5201(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5201t6murafj-datasheets-1204.pdf | TO-226-3, TO-92-3 Long Body | 3 | No | 900mW | 1 | 600V | 50mA | 600V | 7V | 1μA ICBO | NPN | 100 @ 20mA 5V | 1V @ 500mA, 20mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3074-O(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2010 | /files/toshibasemiconductorandstorage-2sc3074oq-datasheets-0392.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 1W | Single | 120MHz | 50V | 400mV | 5A | 5A | 60V | 5V | 1μA ICBO | NPN | 70 @ 1A 1V | 400mV @ 150mA, 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2859-GR(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 150mW | S-Mini | 150mW | 30V | 30V | 250mV | 500mA | 30V | 500mA | 100nA ICBO | NPN | 200 @ 100mA 1V | 300MHz | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TTC009,F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ttc009fj-datasheets-6815.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 80V | 3A | 100nA ICBO | NPN | 100 @ 500mA 5V | 150MHz | 500mV @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPR04GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG04ACAxxxN | 5°C~55°C | 147.00mmx101.85mmx26.10mm | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 1TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPW20GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG07ACA | 5°C~55°C | 147.00mmx101.85mmx26.10mm | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 14TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N40TU,LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | 2 N-Channel (Dual) | 180pF @ 15V | 122m Ω @ 1A, 10V | 2.6V @ 1mA | 1.6A Ta | 5.1nC @ 10V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L36FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 6 | 16 Weeks | unknown | 150mW | DUAL | FLAT | NOT SPECIFIED | SSM6L36 | NOT SPECIFIED | 2 | R-PDSO-F6 | 330mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5A | 0.85Ohm | N and P-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA 330mA | 1.23nC @ 4V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L09FUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 300mW | 2 | Dual | Other Transistors | 85 ns | 85 ns | 200mA | -1.8V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.4A | 30V | N and P-Channel | 20pF @ 5V | 700m Ω @ 200MA, 10V | 1.8V @ 100μA | 400mA 200mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J372R,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 30V | 1W Ta | P-Channel | 560pF @ 15V | 42m Ω @ 5A, 10V | 1.2V @ 1mA | 6A Ta | 8.2nC @ 4.5V | 1.8V 10V | +12V, -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6H19NU,LF | Toshiba Semiconductor and Storage | $0.74 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-UDFN Exposed Pad | 2mm | 750μm | 2mm | 12 Weeks | 6 | 1 | 6-UDFN (2x2) | 130pF | 2A | 3.6V | 40V | 1W Ta | 160mOhm | N-Channel | 130pF @ 10V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 2A Ta | 2.2nC @ 4.2V | 185 mΩ | 1.8V 8V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K56ACT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SC-101, SOT-883 | 12 Weeks | unknown | 1.4A | 20V | 500mW Ta | N-Channel | 55pF @ 10V | 235m Ω @ 800mA, 4.5V | 1V @ 1mA | 1.4A Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S6.2FS,L3M | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s62fsl3m-datasheets-2739.pdf | SOD-923 | 2 | 12 Weeks | EAR99 | 32pF @ 1MHz | General Purpose | UNIDIRECTIONAL | DUAL | FLAT | 1 | R-PDSO-F2 | SINGLE | SILICON | No | 5.8V | 1 | 5V | 6.2V | 6.45% | 5mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L16FETE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TA | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 6 | No | 150mW | 2 | Dual | 150mW | 130 ns | 190 ns | 100mA | 10V | 20V | 20V | N and P-Channel | 9.3pF @ 3V | 1.1 V | 3 Ω @ 10mA, 4V | 1.1V @ 0.1mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B18FU,H3F | Toshiba Semiconductor and Storage | $0.16 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b18fuh3f-datasheets-5899.pdf | SC-76, SOD-323 | 12 Weeks | 9pF @ 1MHz | No | 16.2V | 2.5A 8/20μs | 12V | 33V | 2.5A | 12V | 80W | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N42FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshiba-ssm6n42fete85lf-datasheets-0134.pdf | SOT-563, SOT-666 | 6 | No | 150mW | SSM6N42 | 800mA | 10V | 20V | 2 N-Channel (Dual) | 90pF @ 10V | 240m Ω @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF6F6.8MTU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Steering (Rail to Rail) | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df6f68mtulf-datasheets-4236.pdf | 6-SMD, Flat Leads | 8 Weeks | 0.6pF @ 1MHz | General Purpose | UF6 | Yes | 6V | 2.5A 8/20μs | 24V | 5V Max | 4 | 24V | 2.5A | 5V | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN7R504PL,LQ | Toshiba Semiconductor and Storage | $0.51 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 40V | 610mW Ta 61W Tc | N-Channel | 2040pF @ 20V | 7.5m Ω @ 19A, 10V | 2.4V @ 200μA | 38A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3A6.8LCT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a68lctl3f-datasheets-5901.pdf | SC-101, SOT-883 | 12 Weeks | 6pF @ 1MHz | General Purpose | No | 6.5V | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH6400ENH,L1Q | Toshiba Semiconductor and Storage | $1.41 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 850.995985mg | 8 | EAR99 | No | 1 | Single | FET General Purpose Power | 14.6 ns | 5.4ns | 5.2 ns | 19 ns | 13A | 20V | 200V | 1.6W Ta 57W Tc | N-Channel | 1100pF @ 100V | 64m Ω @ 6.5A, 10V | 4V @ 300μA | 13A Ta | 11.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S30CT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s30ctl3f-datasheets-3409.pdf | SOD-882 | 12 Weeks | 7.2pF @ 1MHz | General Purpose | Zener | CST2 | No | 28V | 23V | 1 | 23V | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J114TU(T5L,T) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | UFM | 331pF | 1.8A | 20V | 500mW Ta | P-Channel | 331pF @ 10V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 1.8A Ta | 7.7nC @ 4V | 149 mΩ | 1.5V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5A3.6CJE,LM | Toshiba Semiconductor and Storage | $0.21 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a36cjelm-datasheets-5703.pdf | SOT-553 | 12 Weeks | EAR99 | 52pF @ 1MHz | General Purpose | No | 3.4V | 4 | 1.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK28V65W,LQ | Toshiba Semiconductor and Storage | $6.04 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF6F6.8MCTC(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Steering (Rail to Rail) | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df6f68mctcte85l-datasheets-4510.pdf | 6-XFDFN Exposed Pad | EAR99 | 0.6pF @ 1MHz | General Purpose | UNIDIRECTIONAL | Transient Suppressors | 6V | 5V | Yes | 6V | 2.5A 8/20μs | 5V Max | 24V | 2.5A | 5V | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J206FE(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6j206fete85lf-datasheets-0459.pdf | SOT-563, SOT-666 | 6 | No | Single | 500mW | Other Transistors | 2A | 8V | 20V | 500mW Ta | 2A | -20V | P-Channel | 335pF @ 10V | 130m Ω @ 1A, 4V | 1V @ 1mA | 2A Ta | 1.8V 4V | ±8V |
