Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Interface | Impedance | Additional Feature | Radiation Hardening | Capacitance @ Frequency | Nominal Supply Current | Tolerance | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Supplier Device Package | Memory Size | Max Output Voltage | Output Voltage | Oscillator Type | Number of I/O | Memory Type | Peripherals | RAM Size | Data Bus Width | Forward Current | Termination Style | Output Type | Circuit | Voltage - Input | Voltage - Load | Load Current | Max Input Current | Forward Current-Max | Rise Time | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Zener Voltage | Logic Function | Transistor Element Material | Transistor Application | Drain to Source Voltage (Vdss) | Test Current | Function | FET Technology | Number of Outputs | Speed | Output Configuration | Voltage - Isolation | Power - Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | ESD Protection | Power - Peak Pulse | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Forward (Vf) (Typ) | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Output Current per Channel | Current - Max | Current - Output / Channel | Voltage - Output (Max) | Speed - Read | Speed - Write | On-State Resistance (Max) | Motor Type | Dark Current-Max | Impedance-Max | Current - Output | Core Processor | Voltage - Supply (Vcc/Vdd) | Program Memory Type | Core Size | Program Memory Size | Connectivity | Data Converter | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Current - Drain (Idss) @ Vds (Vgs=0) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Voltage - Zener (Nom) (Vz) | Motor Type - Stepper | Step Resolution | Motor Type - AC, DC | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mfr |
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TLP750(D4SHR-OT4,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUZ20V,H3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | CUZ | Surface Mount | 150°C (TJ) | SC-76, SOD-323 | 29pF @ 1MHz | General Purpose | USC | No | 18.8V | 5A (8/20μs) | 30.5V (Typ) | 20V | 1 | 200W | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP781(D4BLL-TP6,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-SMD, Gull Wing | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 200% @ 5mA | 400% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1907,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 80 @ 10mA, 5V | 250MHz | 300mV @ 250μA, 5mA | 10kOhms | 47kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP785F(D4TEET7F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp785f-datasheets-5863.pdf | 4-DIP (0.400, 10.16mm) | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2310,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-70, SOT-323 | SC-70 | 100 mW | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 120 @ 1mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP781(D4-GB,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~110°C | 1 (Unlimited) | DC | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-DIP (0.300, 7.62mm) | 16 Weeks | NO | 1 | 1 | Transistor | 0.025A | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | 400mV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1311,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-70, SOT-323 | SC-70 | 100 mW | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 120 @ 1mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 10 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP626-2(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | AC, DC | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp6264f-datasheets-3622.pdf | 8-DIP (0.300, 7.62mm) | Lead Free | 12 Weeks | 8 | No | 150mW | 150mW | 2 | 55V | 55V | 50mA | Transistor | 50mA | 8μs | 5000Vrms | 400mV | 55V | 50mA | 1.15V | 8μs 8μs | 50mA | 100% @ 1mA | 1200% @ 1mA | 10μs, 8μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1304,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-70, SOT-323 | SC-70 | 100 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 47 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP620-2(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | AC, DC | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp6202gbtp1ft-datasheets-3621.pdf | 8-DIP (0.300, 7.62mm) | 8 | UL RECOGNIZED | No | 150mW | 2 | 150mW | 2 | 55V | 50mA | Transistor | 50mA | 2μs | 3 μs | 5000Vrms | 400mV | 55V | 50mA | 1.15V | 2μs 3μs | 50mA | 100nA | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2105MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-723 | VESM | 150 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 500μA, 5mA | 2.2 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMP86FS49BUG(C,JZ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TLCS-870/C | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | 85°C | -40°C | 16MHz | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tmp86fs49bugcjz-datasheets-7807.pdf | 64-LQFP | 64 | I2C, UART, USART | No | TMP86 | 64-LQFP (10x10) | 60kB | Internal | 56 | FLASH | LED, PWM, WDT | 2K x 8 | 8b | 16MHz | 870/C | 2.7V~5.5V | FLASH | 8-Bit | 60KB 60K x 8 | I2C, SIO, UART/USART | A/D 16x10b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1106MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-723 | VESM | 150 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 1mA, 5V | 300mV @ 500μA, 5mA | 4.7 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2145-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DEPLETION MODE | RoHS Compliant | 2005 | SC-74A, SOT-753 | 5 | 52 Weeks | 5 | LOW NOISE | 300mW | GULL WING | NOT SPECIFIED | Dual | NOT SPECIFIED | 2 | 14mA | -30V | SILICON | AMPLIFIER | 10V | JUNCTION | 2 N-Channel (Dual) | 13pF @ 10V | 200mV @ 100nA | 1.2mA @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2109,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 70 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 47 kOhms | 22 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ16(TE85L,Q,M) | Toshiba Semiconductor and Storage | $0.43 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-123F | 12 Weeks | 2 | 30Ohm | ±10% | 700mW | Single | 10μA | 16V | 10mA | No | 30Ohm | 10μA @ 11V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1102,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 50 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 10 kOhms | 10 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ10(TE85L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOD-123F | ±10% | CRZ10 | 700mW | 30Ohm | 10μA @ 6V | 1V @ 200mA | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1116,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 50 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 10 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62216FTG,C8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2012 | 48-VFQFN Exposed Pad | 12 Weeks | PWM | General Purpose | 4.75V~5.25V | 48-QFN (7x7) | 10V~38V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 2A | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP3412SRHA4(TPE | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
TLP3412S | Surface Mount | 16-LDFN | S-VSON16T (2x6.25) | SMD (SMT) Tab | AC, DC | SPST-NO (1 Form A) | 1.5VDC | 0 V ~ 60 V | 250 mA | 1.5 Ohms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62212FNG,C8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-tb62212fngc8el-datasheets-0054.pdf | 48-TFSOP (0.240, 6.10mm Width) Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.5V~5.5V | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (8) | 2A | Bipolar | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MG08ADA400E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
SATA III | MG08-D | 5°C ~ 55°C | 147.00mm x 101.85mm x 26.10mm | - | 5V, 12V | 4TB | Magnetic Disk (HDD) | - | - | - | 3.5" | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TC78H630FNG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -30°C~85°C TA | Tape & Reel (TR) | DMOS | RoHS Compliant | 16-TSSOP (0.173, 4.40mm Width) | 12 Weeks | PWM | General Purpose | 2.7V~5.5V | 2.5V~15V | Driver | Pre-Driver - Half Bridge | 2.1A | Bipolar | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TDTC143E,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 30 @ 10mA, 5V | 250 MHz | 300mV @ 500μA, 10mA | 4.7 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67S141FTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tc62d776cfgel-datasheets-3608.pdf | 48-WFQFN Exposed Pad | 17 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~40V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (2) | 3A | Unipolar | 1, 1/2, 1/4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67S128FTG(O,EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Cut Tape (CT) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 64-VFQFN Exposed Pad | 16 Weeks | Parallel | General Purpose | 0V~5.5V | 6.5V~44V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 5A | Bipolar | 1/8, 1/16, 1/32 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62206FG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | DMOS | RoHS Compliant | 2011 | /files/toshiba-tb62206fgel-datasheets-7700.pdf | 20-BSOP (0.346, 8.80mm Width) + 2 Heat Tabs | 16.5mm | 2.3mm | 8.8mm | Unknown | 20 | Parallel | 3.5mA | General Purpose | 4.5V~5.5V | TB62206 | 40V | 13V~35V | AND | Driver - Fully Integrated, Control and Power Stage | 1 | Half Bridge (4) | Stepper | 1.5A | Bipolar | 1, 1/2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB9101FNG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q100 | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 3 (168 Hours) | Bi-CMOS | RoHS Compliant | 24-LSSOP (0.220, 5.60mm Width) | 16 Weeks | On/Off | Automotive | 7V~18V | 0.3V~40V | Driver - Fully Integrated, Control and Power Stage | Pre-Driver - Half Bridge (4) | 1.5A | Brushed DC |
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