Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Packing Method | Number of Functions | Filter Type | Capacitance @ Frequency | Applications | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Memory Size | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Rated Current | Gain Bandwidth Product | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Lines | Current Rating (Max) | Threshold Voltage | Power - Max | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Max Breakdown Voltage | Bidirectional Channels | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2SA1962-O(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 30MHz | RoHS Compliant | 2007 | /files/toshiba-2sa1962oq-datasheets-9957.pdf&product=toshibasemiconductorandstorage-2sa1962oq-6316387 | -230V | -15A | TO-3P-3, SC-65-3 | Lead Free | 3 | 16 Weeks | 3 | No | 130W | 2SA1962 | Single | 130W | 1 | Other Transistors | 30MHz | SILICON | COLLECTOR | AMPLIFIER | PNP | 230V | -1.5V | 230V | 15A | 30MHz | 230V | 5V | 55 | 5μA ICBO | PNP | 80 @ 1A 5V | 3V @ 800mA, 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1680(F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1680fm-datasheets-0995.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 120 @ 100mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1930,CKQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1930qj-datasheets-1011.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 180V | 2A | 5μA ICBO | PNP | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1837(LBSAN,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA949-Y(T6SHRP,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa949yte6fm-datasheets-1022.pdf | TO-226-3, TO-92-3 Long Body | 800mW | 150V | 50mA | 100nA ICBO | PNP | 70 @ 10mA 5V | 120MHz | 800mV @ 1mA, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB1457(T6CNO,A,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sb1457t6cnoaf-datasheets-1081.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 100V | 2A | 10μA ICBO | PNP | 2000 @ 1A 2V | 50MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2229-O(SHP,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2235-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2235-Y(MBSH1,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2229-O(MIT1F,M) | Toshiba Semiconductor and Storage | $0.12 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2655-Y(T6STL,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2655-Y,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4682,T6CSF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4682t6fj-datasheets-1192.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 15V | 3A | 1μA ICBO | NPN | 800 @ 500mA 1V | 150MHz | 500mV @ 30mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5171,ONKQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5171qj-datasheets-1207.pdf | TO-220-3 Full Pack | 2W | 180V | 2A | 5μA ICBO | NPN | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4793(PAIO,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3138-Y(TE85L,F) | Toshiba Semiconductor and Storage | $6.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | unknown | 150mW | Single | Other Transistors | 100MHz | NPN | 150mW | 200V | 200V | 750mV | 500mV | 50mA | 50MHz | 200V | 5V | 70 | 100nA ICBO | NPN | 120 @ 10mA 3V | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1244-Y(Q) | Toshiba Semiconductor and Storage | $17.63 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | 60MHz | RoHS Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | Silver, Tin | PNP | 1W | Single | 1W | 1 | PW-MOLD | 60MHz | 1W | 50V | 50V | 5A | 50V | 5A | 60V | 5V | 120 | 1μA ICBO | PNP | 120 @ 1A 1V | 60MHz | 400mV @ 150mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD2695(T6CANO,A,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2695t6canoaf-datasheets-6746.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 60V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD2695(T6CANO,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2695t6canoaf-datasheets-6746.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 60V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HDWJ110UZSVA | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MQ01ABDxxx | 5°C~55°C | 100.45mmx69.85mmx9.50mm | Not Applicable | RoHS Compliant | 6 Weeks | 4.13oz 117g | 5V | 1TB | 2.5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HDEPX20GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 3 (168 Hours) | ROHS3 Compliant | 6 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N67NU,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 6-WDFN Exposed Pad | 6 | 12 Weeks | AEC-Q101 | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W Ta | 4A | 0.0391Ohm | 2 N-Channel (Dual) | 310pF @ 15V | 39.1m Ω @ 2A, 4.5V | 1V @ 1mA | 4A Ta | 3.2nC @ 4.5V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N24TU,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | 2 N-Channel (Dual) | 245pF @ 10V | 145m Ω @ 500mA, 4.5V | 1.1V @ 100μA | 500mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T2N7002AK,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 12 Weeks | 1 | 320mW | 150°C | SOT-23 | 17pF | 2 ns | 7 ns | 200mA | 20V | 60V | 1.1V | 320mW Ta | 2.8Ohm | 60V | N-Channel | 17pF @ 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250μA | 200mA Ta | 0.35nC @ 4.5V | 3.9 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J338R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1W Ta | 6A | 0.0279Ohm | P-Channel | 1400pF @ 6V | 17.6m Ω @ 6A, 8V | 1V @ 1mA | 6A Ta | 19.5nC @ 4.5V | 1.8V 8V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K123TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 2mm | 700μm | 1.7mm | 3 | 12 Weeks | 3 | yes | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 4.2A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 500mW Ta | N-Channel | 1010pF @ 10V | 28m Ω @ 3A, 4V | 1V @ 1mA | 4.2A Ta | 13.6nC @ 4V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AB4X2X6SM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Amobeads® | Surface Mount | Surface Mount | Cut Tape (CT) | 0.315Lx0.236W 8.00mmx6.00mm | 1 (Unlimited) | RoHS Compliant | 2005 | /files/toshibasemiconductorandstorage-ab4x2x6sm-datasheets-0940.pdf | 2-SMD, Gull Wing | 8mm | 5.3086mm | 10 Weeks | EAR99 | 8504.50.80.00 | TR | 1 | FERRITE BEAD | 9A | 1 | 9A Typ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K376R,LF | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 30V | 2W Ta | N-Channel | 200pF @ 10V | 56m Ω @ 2A, 4.5V | 1V @ 1mA | 4A Ta | 2.2nC @ 4.5V | 1.8V 4.5V | +12V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF2B6.8AFS,L3M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b68afsl3m-datasheets-2760.pdf | SOD-923 | 12 Weeks | 9pF @ 1MHz | General Purpose | No | 5.8V | 1A 8/20μs | 7V Typ | 5V Max | 7V | 1A | 5V | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N39TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW | 2 N-Channel (Dual) | 260pF @ 10V | 119m Ω @ 1A, 4V | 1V @ 1mA | 1.6A Ta | 7.5nC @ 4V | Standard |
Please send RFQ , we will respond immediately.