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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Height | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Capacitance @ Frequency | Applications | Polarity | Max Power Dissipation | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | RF Type | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Memory Size | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Breakdown Voltage | Threshold Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Power Line Protection | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Direction | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SC3303-Y(T6L1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 120MHz | RoHS Compliant | 2013 | /files/toshiba-2sc3303yt6l1nq-datasheets-9294.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | Silver, Tin | No | 1W | Single | 1W | 1 | 120MHz | 80V | 200mV | 80V | 5A | 100V | 7V | 70 | 1μA ICBO | NPN | 120 @ 1A 1V | 400mV @ 150mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1425-Y,T2F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1425yt2fj-datasheets-0993.pdf | SC-71 | 1W | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1680,T6ASTIF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1680fm-datasheets-0995.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 120 @ 100mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1931,NETQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1931sinfqj-datasheets-1023.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 50V | 5A | 1μA ICBO | PNP | 100 @ 1A 1V | 60MHz | 400mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6TR,A,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-O(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-O(FA1,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229(TE6SAN1F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229-O(T6SAN2FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y,T6USNF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3328-Y,HOF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3328ot6kehfm-datasheets-1163.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 80V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5201,T6MURAF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5201t6murafj-datasheets-1204.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 600V | 50mA | 1μA ICBO | NPN | 100 @ 20mA 5V | 1V @ 500mA, 20mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4793,YHF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3665-Y(T2NSW,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3665yt2ynsfj-datasheets-1189.pdf | SC-71 | 1W | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4881,LS1SUMIF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4881canofm-datasheets-1237.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 50V | 5A | 1μA ICBO | NPN | 100 @ 1A 1V | 100MHz | 400mV @ 125mA, 2.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2406-Y(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | 8MHz | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2406yf-datasheets-0405.pdf | TO-220-3 Full Pack | Lead Free | 3 | NPN | 25W | Single | 25W | 1 | TO-220NIS | 8MHz | 25W | 80V | 1.5V | 4A | 80V | 4A | 80V | 5V | 30μA ICBO | NPN | 120 @ 500mA 5V | 8MHz | 1.5V @ 300mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2206(T6CNO,A,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 100V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2257(CANO,A,Q) | Toshiba Semiconductor and Storage | $0.74 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MQ01ABD100M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MQ01ABDxxx | 5°C~55°C | 100.45mmx69.85mmx9.50mm | Not Applicable | RoHS Compliant | 6 Weeks | 4.13oz 117g | 5V | 1TB | 2.5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPN10GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Not Applicable | ROHS3 Compliant | 6 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N36TU,LF | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 500mW Ta | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P40TU,LF | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | 2 P-Channel (Dual) | 120pF @ 15V | 226m Ω @ 1A, 10V | 2V @ 1mA | 1.4A Ta | 2.9nC @ 10V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N43FU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 6 | EAR99 | unknown | 200mW | 500mA | 20V | 200mW | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J332R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | SOT-23-3 Flat Leads | 880μm | 3 | 16 Weeks | 3 | unknown | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | 150°C | 15 ns | 75 ns | -6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -500mV | 1W Ta | 6A | 0.042Ohm | -22V | P-Channel | 560pF @ 15V | 42m Ω @ 5A, 10V | 1.2V @ 1mA | 6A Ta | 8.2nC @ 4.5V | 1.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K318R,LF | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 12 Weeks | 2.5A | 60V | 1W Ta | N-Channel | 235pF @ 30V | 107m Ω @ 2A, 10V | 2.8V @ 1mA | 2.5A Ta | 7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA31275FNG(O,EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 240MHz~450MHz | 7.3mA | RoHS Compliant | 2003 | /files/toshibasemiconductorandstorage-ta31275fngoel-datasheets-5188.pdf | 24-LSSOP (0.220, 5.60mm Width) | 2.4V~5.5V | AM, FM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J56ACT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-101, SOT-883 | 12 Weeks | 1.4A | 20V | 500mW Ta | P-Channel | 100pF @ 10V | 390m Ω @ 800mA, 4.5V | 1V @ 1mA | 1.4A Ta | 1.6nC @ 4.5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B6.8ACT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | AVALANCHE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b68actl3f-datasheets-2845.pdf | SOD-882 | 9pF | 400μm | 2 | 12 Weeks | yes | 9pF @ 1MHz | General Purpose | BOTTOM | 1 | 1 | 150°C | R-XBCC-N2 | SINGLE | 5.8V | SILICON | 5V | No | 1A 8/20μs | 7V Typ | 5V Max | 7V | 1A | 5V | Bidirectional | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L39TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 12 Weeks | EAR99 | unknown | 500mW | 800mA | 20V | 500mW | N and P-Channel | 268pF @ 10V | 143m Ω @ 600MA, 4V | 1V @ 1mA | Logic Level Gate, 1.8V Drive |
