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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Filter Type | Capacitance @ Frequency | Applications | Polarity | Composition | Reference Standard | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Supply Voltage | Terminal Pitch | Base Part Number | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Logic IC Type | Supplier Device Package | -3db Bandwidth | Input Capacitance | Memory Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Zener Voltage | Working Voltage | Logic Function | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Test Current | Supply Type | DS Breakdown Voltage-Min | FET Technology | Number of Lines | Current Rating (Max) | Breakdown Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Non-rep Peak Rev Power Dis-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Peak Pulse Power | Number of Unidirectional Channels | Power - Peak Pulse | Bidirectional Channels | Number of Bidirectional Channels | Reference Voltage | Voltage Tolerance | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TC7PCI3212MT,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 200μA | RoHS Compliant | 2013 | 20-UFQFN Exposed Pad | 20 | 12 Weeks | 11.5Ohm | PCI Express® | QUAD | NO LEAD | 3.3V | 0.5mm | 4 | Bus Driver/Transceivers | 3.3V | Not Qualified | R-PQCC-N20 | BUS DRIVER | 11.5GHz | Demultiplexer, Multiplexer | Single | 13.5Ohm | 2:1 | 3V~3.6V | SPDT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPR03GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG04ACAxxxN | 5°C~55°C | 147.00mmx101.85mmx26.10mm | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 2TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N58NU,LF | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 12 Weeks | 6 | 1W | 2 | Dual | 26 ns | 9 ns | 4A | 1V | 30V | 30V | 2 N-Channel (Dual) | 129pF @ 15V | 84m Ω @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N16FUTE85LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | EAR99 | unknown | 200mW | 2 | Dual | FET General Purpose Powers | 70 ns | 125 ns | 100mA | 1.1V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 20V | 2 N-Channel (Dual) | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35AFE,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 6 | 12 Weeks | YES | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 250mW | 0.25A | 2.4Ohm | 10 pF | 2 N-Channel (Dual) | 36pF @ 10V | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPW4R008NH,L1Q | Toshiba Semiconductor and Storage | $4.23 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 25 ns | 8.6ns | 12 ns | 52 ns | 116A | 20V | 80V | 800mW Ta 142W Tc | N-Channel | 5300pF @ 40V | 4m Ω @ 50A, 10V | 4V @ 1mA | 116A Tc | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K361R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | unknown | AEC-Q101 | DUAL | 1 | R-PDSO-F3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 100V | 100V | 1.2W Ta | 14A | 0.069Ohm | 9.1 mJ | N-Channel | 430pF @ 15V | 69m Ω @ 2A, 10V | 2.5V @ 100μA | 3.5A Ta | 3.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K37FS,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-75, SOT-416 | 12 Weeks | unknown | 200mA | 20V | 100mW Ta | N-Channel | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LB 2.8X4.5U | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Amobeads® | Through Hole | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | Axial, Kinked Radial Bend | EAR99 | 8504.50.80.00 | FERRITE BEAD | 1 | 5A Typ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8208(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2003 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 20V | 5A | 8-SOIC (0.173, 4.40mm Width) | Lead Free | 8 | 450mW | TPC*208 | 8-SOP (5.5x6.0) | 780pF | 5ns | 5A | 20V | 450mW | 2 N-Channel (Dual) | 780pF @ 10V | 50mOhm @ 2.5A, 4V | 1.2V @ 200μA | 5A | 9.5nC @ 5V | Logic Level Gate | 50 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B6M4CT,L3F | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b6m4ctl3f-datasheets-3472.pdf | SOD-882 | 2 | 12 Weeks | LOW CAPACITANCE | 0.2pF @ 1MHz | BIDIRECTIONAL | YES | BOTTOM | 1 | R-XBCC-N2 | SINGLE | SILICON | 5.5V | 30W | No | 5.6V | 2A 8/20μs | 15V | 5.5V Max | 30W | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8208(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2003 | /files/toshiba-tpc8208te12lqm-datasheets-9989.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 750mW | TPC*208 | 1.5W | 8-SOP (5.5x6.0) | 780pF | 5ns | 2.7 ns | 5A | 12V | 20V | 450mW | 50mOhm | 20V | 2 N-Channel (Dual) | 780pF @ 10V | 50mOhm @ 2.5A, 4V | 1.2V @ 200μA | 5A | 9.5nC @ 5V | Logic Level Gate | 50 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S6.8MFS,L3M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s68mfsl3m-datasheets-8664.pdf | SOD-923 | 12 Weeks | 0.45pF @ 1MHz | SOD-923 | No | 6V | 3A | 15V | 5V Max | 1 | 45W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCL4201(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 4-XFLGA | 4 | No | 500mW | TPC*201 | 85ns | 250 ns | 12V | 2 N-Channel (Half Bridge) | 720pF @ 10V | 1.2V @ 200μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5G7M2N,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Steering (Rail to Rail) | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5g7m2nlf-datasheets-0915.pdf | 5-XFDFN | 12 Weeks | 5 | 0.2pF @ 1MHz | General Purpose | 5-DFN (1.3x0.8) | No | 6V | 2.5A 8/20μs | 20V | 5.5V Max | 4 | 20V | 2.5A | 5.5V | 50W | 50W | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK110P10PL,RQ | Toshiba Semiconductor and Storage | $0.82 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S20CT,L3F | Toshiba Semiconductor and Storage | $0.16 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s20ctl3f-datasheets-3422.pdf | SOD-882 | 12 Weeks | 9pF @ 1MHz | General Purpose | Zener | CST2 | No | 18.8V | 15V | 1 | 15V | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K357R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 60V | 1W Ta | N-Channel | 60pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 650mA Ta | 1.5nC @ 5V | 3V 5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF3A6.8LFV,L3F | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a68lfvl3f-datasheets-4822.pdf | SOT-723 | 12 Weeks | 6pF @ 1MHz | General Purpose | No | 6.5V | 2 | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R204PB,L1Q | Toshiba Semiconductor and Storage | $1.47 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 40V | 960mW Ta 132W Tc | N-Channel | 5855pF @ 20V | 1.2m Ω @ 50A, 10V | 3V @ 500μA | 150A Tc | 62nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S5M4SL,L3F | Toshiba Semiconductor and Storage | $0.25 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s5m4sll3f-datasheets-5580.pdf | 0201 (0603 Metric) | 2 | 12 Weeks | EAR99 | 0.35pF @ 1MHz | UNIDIRECTIONAL | YES | DUAL | 1 | R-PDSO-N2 | SINGLE | SILICON | 3.6V | 30W | No | 3.7V | 2A 8/20μs | 15V | 3.6V Max | 1 | 30W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 9.6nF | 150A | 45V | 960mW Ta 170W Tc | N-Channel | 9600pF @ 22.5V | 1.04mOhm @ 50A, 10V | 2.4V @ 1mA | 150A Tc | 99nC @ 10V | 1.04 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5A5.6FTE85LF | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 125°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a56fte85lf-datasheets-9066.pdf | SC-74A, SOT-753 | 5 | EAR99 | 65pF @ 1MHz | General Purpose | Unidirectional | 200mW | Common Anode | 200mW | 4 | Voltage Reference Diodes | 5.6V | 2.5V | 5mA | 5.3V | No | 2.5V | 4 | 5.6V | 6% | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K16CT,L3F | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
download | π-MOSIV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SC-101, SOT-883 | 12 Weeks | 20V | 100mW Ta | N-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S23P1CT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | SOD-882 | 12 Weeks | 26pF @ 1MHz | General Purpose | No | 21.5V | 5.5A 8/20μs | 45V | 21V Max | 1 | 250W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J65CTC,L3F | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SC-101, SOT-883 | 12 Weeks | 20V | 500mW Ta | P-Channel | 48pF @ 10V | 500m Ω @ 500mA, 4.5V | 1V @ 1mA | 700mA Ta | 1.2V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S8.2CT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s82ctl3f-datasheets-9147.pdf | SOD-882 | 12 Weeks | 20pF @ 1MHz | General Purpose | Zener | CST2 | No | 7.7V | 6.5V | 1 | 6.5V | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K404TU,LF | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW Ta | N-Channel | 400pF @ 10V | 55m Ω @ 2A, 4V | 1V @ 1mA | 3A Ta | 5.9nC @ 4V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP523-4(LF1,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK17A80W,S4X | Toshiba Semiconductor and Storage | $2.09 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 18.1mm | 16 Weeks | 1 | 45W | 150°C | TO-220SIS | 58 ns | 80 ns | 17A | 20V | 800V | 45W Tc | 250mOhm | 800V | N-Channel | 2050pF @ 300V | 290mOhm @ 8.5A, 10V | 4V @ 850μA | 17A Ta | 32nC @ 10V | 10V | ±20V |
