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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Current - Supply | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Interface | Pbfree Code | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Capacitance @ Frequency | Applications | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | RF Type | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Memory Size | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Working Voltage | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Power - Max | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Voltage - Reverse Standoff (Typ) | Reverse Standoff Voltage | Max Breakdown Voltage | Direction | Bidirectional Channels | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | RPM | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTC0002(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 30MHz | RoHS Compliant | 2009 | TO-3PL | Lead Free | 16 Weeks | 3 | No | 180W | 180W | 1 | 30MHz | 160V | 2V | 160V | 18A | 160V | 5V | 1μA ICBO | NPN | 80 @ 1A 5V | 2V @ 900mA, 9A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1837(F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | 70MHz | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | -230V | -1A | TO-220-3 Full Pack | Lead Free | 3 | Copper, Silver, Tin | No | 70MHz | PNP | 2W | 2SA1837 | Single | 2W | 1 | TO-220NIS | 70MHz | 2W | 230V | 230V | 1A | 230V | 1A | 230V | 5V | 100 | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1837,HFEMBJF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6CANOAF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1680,T6SCMDF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1680fm-datasheets-0995.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 120 @ 100mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-Y,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | yes | unknown | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA965-Y,SWFF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa965ote6fm-datasheets-1079.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 120V | 800mA | 100nA ICBO | PNP | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229-Y(SAN2,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229-Y(SHP1,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SB1495,Q(J | Toshiba Semiconductor and Storage | $4.19 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sb1495qm-datasheets-1095.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 10μA ICBO | PNP | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2383-O(T6OMI,FM | Toshiba Semiconductor and Storage | $4.57 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2383yt6kehfm-datasheets-1139.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 160V | 1A | 1μA ICBO | NPN | 60 @ 200mA 5V | 100MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3665-Y,T2YNSF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3665yt2ynsfj-datasheets-1189.pdf | SC-71 | 1W | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235(T6KMAT,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4604,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4604fj-datasheets-1200.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 3A | 100nA ICBO | NPN | 120 @ 100mA 2V | 100MHz | 500mV @ 75mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC3668-O,T2CLAF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3668yt2wnlfj-datasheets-1191.pdf | SC-71 | 1W | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1954BTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-70, SOT-323 | PNP | 100mW | Single | USM | 130MHz | 100mW | 12V | 12V | -110mV | 250mV | 500mA | 12V | 500mA | -15V | -5V | 300 | 100nA ICBO | PNP | 500 @ 10mA 2V | 130MHz | 250mV @ 10mA, 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1930(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 200MHz | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-2sa1930qj-datasheets-1011.pdf | TO-220-3 Full Pack | Lead Free | 12 Weeks | Copper, Silver, Tin | 2W | Single | 20W | 1 | 200MHz | 2W | 180V | 180V | 2A | 180V | 5V | 50 | 5μA ICBO | PNP | 100 @ 100mA 5V | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2206,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 100V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2695,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2695t6canoaf-datasheets-6746.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 60V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MQ01ABF032 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MQ01ABFxxx | Standard | 5°C~55°C | 100.45mmx69.85mmx9.50mm | Not Applicable | RoHS Compliant | 7mm | 6 Weeks | 3.26oz 92.89g | SATA | 5V | 320GB | 5400 RPM | 2.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPW10GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG07ACA | 5°C~55°C | 147.00mmx101.85mmx26.10mm | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 14TB | 3.5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N62TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 20V | 500mW Ta | 2 N-Channel (Dual) | 177pF @ 10V | 85m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 2nC @ 4.5V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N57NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 12 Weeks | 6 | unknown | 1W | Dual | 4A | 12V | 30V | 30V | 2 N-Channel (Dual) | 310pF @ 10V | 46m Ω @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N815R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 100V | 1.8W Ta | 2 N-Channel (Dual) | 290pF @ 15V | 103m Ω @ 2A, 10V | 2.5V @ 100μA | 2A Ta | 3.1nC @ 4.5V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K329R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 880μm | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 9.2 ns | 6.4 ns | 3.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 30V | N-Channel | 123pF @ 15V | 126m Ω @ 1A, 4V | 1V @ 1mA | 3.5A Ta | 1.5nC @ 4V | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J351R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 12 Weeks | 60V | 2W Ta | P-Channel | 660pF @ 10V | 134m Ω @ 1A, 10V | 2V @ 1mA | 3.5A Ta | 15.1nC @ 10V | 4V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA31273FNG(EL) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | 240MHz~450MHz | 6.8mA | 6.8mA | RoHS Compliant | 2002 | /files/toshibasemiconductorandstorage-ta31273fngel-datasheets-5228.pdf | 20-LSSOP (0.173, 4.40mm Width) | 20 | 3V~5.5V | AM | 20-SSOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK1828TE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | unknown | YES | FET General Purpose Powers | Single | 20V | 200mW Ta | 0.05A | N-Channel | 5.5pF @ 3V | 40 Ω @ 10mA, 2.5V | 1.5V @ 100μA | 50mA Ta | 2.5V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B6.8E,L3F | Toshiba Semiconductor and Storage | $0.18 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b68el3f-datasheets-2960.pdf | SC-79, SOD-523 | 12 Weeks | 2 | 15pF @ 1MHz | General Purpose | Single | 5V | No | 5.8V | 5V Max | 5V | Bidirectional | 1 |
