Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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MCH6606-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Contains Lead | 8 Weeks | 6 | No | 10 ns | 11ns | 75 ns | 105 ns | 53A | 20V | 50V | 5.28Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC4627R-A-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 4-XFBGA | 5 Weeks | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTZD3155CT1H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntzd3155ct1h-datasheets-6611.pdf | SOT-563, SOT-666 | 6 | 26 Weeks | 8.193012mg | 6 | EAR99 | No | e3 | Tin (Sn) | YES | 250mW | FLAT | 2 | Dual | 2 | Other Transistors | 430mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 2.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||
DMN4031SSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn4031ssdq13-datasheets-6616.pdf | 8-SOIC (0.154, 3.90mm Width) | 7 Weeks | EAR99 | e3 | Matte Tin (Sn) | 1.42W | NOT SPECIFIED | NOT SPECIFIED | 5.2A | 40V | 1.42W | 2 N-Channel (Dual) | 945pF @ 20V | 31m Ω @ 6A, 10V | 3V @ 250μA | 18.6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
NTZD3154NT1H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/onsemiconductor-ntzd3154nt1g-datasheets-3038.pdf | SOT-563, SOT-666 | 6 | 5 Weeks | 6 | EAR99 | No | e3 | Tin (Sn) | YES | 250mW | FLAT | Dual | 2 | FET General Purpose Power | 6 ns | 4ns | 8 ns | 16 ns | 540mA | 6V | SILICON | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20 pF | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||
EFC6611R-A-TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 1998 | 6-SMD, No Lead | 15 Weeks | 59.987591mg | 6 | 2.5W | 1 | 80 ns | 570ns | 17.7 μs | 38 μs | 27A | 8V | 12V | 3.2mOhm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
VEC2616-TL-H-Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | /files/onsemiconductor-vec2616tlhz-datasheets-6620.pdf | 8-SMD, Flat Lead | 60V | 1W | N and P-Channel | 505pF @ 20V | 80m Ω @ 1.5A, 10V | 3A 2.5A | 10nC @ 10V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC6611R-TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 1998 | /files/onsemiconductor-efc6611rtf-datasheets-6624.pdf | 6-SMD, No Lead | Lead Free | 7 Weeks | CONSULT SALES OFFICE (Last Updated: 6 days ago) | yes | EAR99 | 2.5W | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | METAL-OXIDE SEMICONDUCTOR | 27A | 2 N-Channel (Dual) Common Drain | 100nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||
UPA1764G-E2-AZ | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2001 | /files/renesaselectronicsamerica-upa1764ge2az-datasheets-6574.pdf | 8-SOIC (0.173, 4.40mm Width) | 16 Weeks | EAR99 | 2W | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 7A | 60V | METAL-OXIDE SEMICONDUCTOR | 2W | 7A | 2 N-Channel (Dual) | 1300pF @ 10V | 35m Ω @ 3.5A, 10V | 29nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
DMN3033LSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3033lsdq13-datasheets-6632.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 7 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 2W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | 6.9A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 30A | 0.02Ohm | 2 N-Channel (Dual) | 725pF @ 15V | 20m Ω @ 6.9A, 10V | 2.1V @ 250μA | 13nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
FW216A-TL-2W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-fw216atl2w-datasheets-6577.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 4 Weeks | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 2.2W | GULL WING | 8 | Dual | 2 | 6 ns | 21ns | 10 ns | 20 ns | 4.5A | 20V | SILICON | 35V | 35V | METAL-OXIDE SEMICONDUCTOR | 0.064Ohm | 2 N-Channel (Dual) | 280pF @ 10V | 64m Ω @ 4.5A, 10V | 5.6nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||
DMN63D1LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn63d1ldw13-datasheets-6634.pdf | TO-236-3, SC-59, SOT-23-3 | 6 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 310mW | NOT SPECIFIED | NOT SPECIFIED | 250mA | 60V | 310mW | 2 N-Channel (Dual) | 30pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 0.3nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
MCH6613-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DEPLETION MODE | RoHS Compliant | 2004 | /files/onsemiconductor-mch6613tle-datasheets-6580.pdf | 6-SMD, Flat Leads | 2mm | 850μm | 1.6mm | Lead Free | 6 | 6 Weeks | 6 | LAST SHIPMENTS (Last Updated: 11 hours ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 800mW | 6 | Dual | 800mW | 2 | 65ns | 120 ns | 155 ns | 200mA | 10V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 0.35A | -30V | N and P-Channel | 7pF @ 10V | 3.7 Ω @ 80mA, 4V | 350mA 200mA | 1.58nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||
EFC6612R-A-TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | 6-SMD, No Lead | 7 Weeks | 2.5W | 2 N-Channel (Dual) Asymmetrical | 27nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVDD5894NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvdd5894nlt4g-datasheets-6530.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | Lead Free | 6 Weeks | 329.988449mg | 5 | LIFETIME (Last Updated: 11 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 3.8W | FET General Purpose Power | 12.4 ns | 30.2ns | 54 ns | 36 ns | 64A | 20V | METAL-OXIDE SEMICONDUCTOR | 40V | 2 N-Channel (Dual) Common Drain | 2103pF @ 25V | 10m Ω @ 50A, 10V | 2.5V @ 250μA | 14A | 41nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
AOC4810 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | 8-XFLGA Exposed Pad | 900mW | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | METAL-OXIDE SEMICONDUCTOR | 8A | 2 N-Channel (Dual) Common Drain | 1130pF @ 15V | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMC1340-SO | Trinamic Motion Control GmbH |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | ROHS3 Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 8 | 1.38W | 4.1A | 30V | 2 N and 2 P-Channel (H-Bridge) | 960pF @ 25V | 33m Ω @ 5A, 10V | 3V @ 250μA | 5.5A 4.1A | 10nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMN2041UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn2041ufdb13-datasheets-2825.pdf | 6-UDFN Exposed Pad | 6 | 6 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 4.7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 0.04Ohm | 2 N-Channel (Dual) | 713pF @ 10V | 40m Ω @ 4.2A, 4.5V | 1.4V @ 250μA | 15nC @ 8V | Standard | |||||||||||||||||||||||||||||||||||||
ECH8654-TL-HQ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 8-SMD, Flat Lead | 8 Weeks | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMFD4C87NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | /files/onsemiconductor-ntmfd4c87nt3g-datasheets-6548.pdf | 8-PowerTDFN | Lead Free | 24 Weeks | 8 | yes | e3 | Tin (Sn) | 1.1W | FET General Purpose Power | 14.9A | 30V | METAL-OXIDE SEMICONDUCTOR | 26.6A | 2 N-Channel (Dual) Asymmetrical | 1252pF @ 15V | 5.4m Ω @ 30A, 10V | 2.2V @ 250μA | 11.7A 14.9A | 22.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
EMH2308-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | /files/onsemiconductor-emh2308tlh-datasheets-6556.pdf | 8-SMD, Flat Lead | Lead Free | 4 Weeks | LIFETIME (Last Updated: 1 week ago) | yes | EAR99 | 1W | Other Transistors | 3A | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 3A | 2 P-Channel (Dual) | 320pF @ 10V | 85m Ω @ 3A, 4.5V | 4nC @ 4.5V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||
UPA2373T1P-E4-A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-upa2373t1pe4a-datasheets-6560.pdf | 4-XFBGA | 16 Weeks | 4 | EAR99 | 1.3W | NOT SPECIFIED | 4 | NOT SPECIFIED | 2 N-Channel (Dual) Common Drain | 22nC @ 4V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC4618R-P-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | /files/onsemiconductor-efc4618rptr-datasheets-6563.pdf | 4-XBGA, 4-FCBGA | Lead Free | 4 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.6W | 4 | Dual | 200 ns | 815ns | 1.77 μs | 1.84 μs | 12V | 2 N-Channel (Dual) Common Drain | 25.4nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||
JAN2N7334 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/597 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv2n7334-datasheets-5954.pdf | 14-DIP (0.300, 7.62mm) | 1.4W | FET General Purpose Power | Qualified | 1A | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 1A | 4 N-Channel | 700m Ω @ 600mA, 10V | 4V @ 250μA | 60nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
NTZD3152PT1H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntzd3152pt1g-datasheets-8241.pdf | SOT-563, SOT-666 | 6 | 15 Weeks | 8.193012mg | 6 | yes | EAR99 | ESD PROTECTION, LOW THRESHOLD | e3 | Tin (Sn) | YES | 250mW | FLAT | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 280mW | 2 | Other Transistors | 10 ns | 12ns | 19 ns | 35 ns | 430mA | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.43A | 0.9Ohm | 2 P-Channel (Dual) | 175pF @ 16V | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||
PMDPB95XNE,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/nxpusainc-pmdpb95xne115-datasheets-6111.pdf | 6-UDFN Exposed Pad | 6 | 30V | 475mW | 2 N-Channel (Dual) | 143pF @ 15V | 120m Ω @ 2A, 4.5V | 1.5V @ 250μA | 2.4A | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMC1420-LA | Trinamic Motion Control GmbH |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2014 | 8-PowerTDFN | 8 | 3.57W | 7.3A | 40V | N and P-Channel | 1050pF @ 15V | 26.5m Ω @ 7A, 10V | 3V @ 250μA | 8.8A 7.3A | 11.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP2060UFDB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2060ufdb7-datasheets-6500.pdf | 6-UDFN Exposed Pad | 6 | 6 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 3.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 0.09Ohm | 2 P-Channel (Dual) | 881pF @ 10V | 90m Ω @ 2.9A, 4.5V | 1.4V @ 250μA | 18nC @ 8V | Standard | |||||||||||||||||||||||||||||||||||||
NTMFD4C87NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | /files/onsemiconductor-ntmfd4c87nt3g-datasheets-6548.pdf | 8-PowerTDFN | Lead Free | 24 Weeks | 8 | yes | e3 | Tin (Sn) | 1.1W | FET General Purpose Power | 14.9A | 30V | METAL-OXIDE SEMICONDUCTOR | 26.6A | 2 N-Channel (Dual) Asymmetrical | 1252pF @ 15V | 5.4m Ω @ 30A, 10V | 2.2V @ 250μA | 11.7A 14.9A | 22.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
DMP2060UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2060ufdb7-datasheets-6500.pdf | 6-UDFN Exposed Pad | 6 | 6 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 3.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 0.09Ohm | 2 P-Channel (Dual) | 881pF @ 10V | 90m Ω @ 2.9A, 4.5V | 1.4V @ 250μA | 18nC @ 8V | Standard |
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