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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RJM0306JSP-01#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 2.2W | 3.5A | 30V | 2.2W | 2 N and 2 P-Channel (H-Bridge) | 290pF @ 10V | 65m Ω @ 2A, 10V | 5nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD175XN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nxpusainc-pmgd175xn115-datasheets-6104.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | e3 | Tin (Sn) | IEC-60134 | YES | GULL WING | 6 | 2 | FET General Purpose Power | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 0.905W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 390mW | 0.9A | 0.225Ohm | 2 N-Channel (Dual) | 75pF @ 15V | 225m Ω @ 1A, 4.5V | 1.5V @ 250μA | 900mA | 1.1nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 14 | 14 | no | EAR99 | No | e0 | TIN LEAD | 2W | DUAL | 1.3W | 4 | 14-DIP | 400mA | 20V | SILICON | 90V | 90V | METAL-OXIDE SEMICONDUCTOR | 2A | 3.5Ohm | 10 pF | 4 N-Channel | 60pF @ 25V | 10ns | 10ns | 4.5 Ω @ 1A, 10V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | PDIP | 14 | 18 Weeks | 14 | EAR99 | 8541.29.00.75 | NO | 2W | DUAL | 4 | Not Qualified | 14-DIP | 830mA | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 0.83A | 3A | 1Ohm | 35 pF | 4 N-Channel | 110pF @ 15V | 30ns | 30ns | 1.75 Ω @ 200mA, 5V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 15 Weeks | 14 | No | 2W | 1.3W | 4 | 14-DIP | 60pF | 400mA | 20V | 90V | 2W | 4.5Ohm | 90V | 4 N-Channel | 60pF @ 25V | 4.5Ohm @ 1A, 10V | 2.5V @ 1mA | 400mA | Logic Level Gate | 4.5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD130UN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/nxpusainc-pmgd130un115-datasheets-6097.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 20V | 390mW | 2 N-Channel (Dual) | 83pF @ 10V | 145m Ω @ 1.2A, 4.5V | 1V @ 250μA | 1.2A | 1.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB70EN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/nexperiausainc-pmdpb70en115-datasheets-6095.pdf | 6-UDFN Exposed Pad | 6 | No | 510mW | 6 | Dual | 1.165W | 2 | 3 ns | 16ns | 5 ns | 15 ns | 3.5A | 20V | 30V | 510mW | 30V | 2 N-Channel (Dual) | 130pF @ 15V | 57m Ω @ 3.5A, 10V | 2.5V @ 250μA | 4.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4952 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | 2W | FET General Purpose Power | 11A | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 2 N-Channel (Dual) | 605pF @ 15V | 10.5m Ω @ 11A, 10V | 2.5V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | Lead Free | 14 | No | 2W | 2W | 4 | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1.75Ohm | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTML102UM09R004T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP3 | 10 | 22 Weeks | 3 | EAR99 | No | 480W | UPPER | UNSPECIFIED | 25 | 480W | 2 | FET General Purpose Power | R-XUFM-X10 | 154A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 2 N-Channel (Dual) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 154A Tc | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SI4618DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4618dyt1e3-datasheets-9868.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 506.605978mg | No SVHC | 8 | No | 2.35W | 2 | Dual | 2 | 8-SO | 1.535nF | 11.4A | 16V | 30V | 1V | 1.98W 4.16W | 10mOhm | 30V | 2 N-Channel (Half Bridge) | 1535pF @ 15V | 17mOhm @ 8A, 10V | 2.5V @ 1mA | 8A 15.2A | 44nC @ 10V | Standard | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| APTC90AM60SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc90am60sctg-datasheets-6039.pdf | SP4 | 9 | 22 Weeks | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 10 | 2 | R-XUFM-X9 | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 150A | 0.06Ohm | 2 N-Channel (Half Bridge) | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||
| SIA920DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia920djt1ge3-datasheets-6134.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 2 | FET General Purpose Powers | 5 ns | 12ns | 7 ns | 20 ns | 4.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | 8V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 2 N-Channel (Dual) | 470pF @ 4V | 27m Ω @ 5.3A, 4.5V | 700mV @ 250μA | 7.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| PMDPB38UNE,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/nxpusainc-pmdpb38une115-datasheets-6041.pdf | 6-UDFN Exposed Pad | 6 | 20V | 510mW | 2 N-Channel (Dual) | 268pF @ 10V | 46m Ω @ 3A, 4.5V | 1V @ 250μA | 4A | 4.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB56XN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/nxpusainc-pmdpb56xn115-datasheets-6050.pdf | 6-UDFN Exposed Pad | 6 | 30V | 510mW | 2 N-Channel (Dual) | 170pF @ 15V | 73m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A | 2.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N7335 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/599 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/microsemicorporation-jan2n7335-datasheets-5965.pdf | 14-DIP (0.300, 7.62mm) | 14 | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | MIL-19500/599 | 1.4W | DUAL | NOT SPECIFIED | 14 | NOT SPECIFIED | 4 | Qualified | R-CDIP-T14 | 750mA | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W | MO-036AB | 0.75A | 3A | 1.73Ohm | 75 mJ | 4 P-Channel | 1.4 Ω @ 500mA, 10V | 4V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||||
| APTC60DSKM70T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | SP1 | 22 Weeks | 1 | EAR99 | No | 250W | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N Channel (Dual Buck Chopper) | 700pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA914ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia914adjt1ge3-datasheets-5983.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 15 Weeks | 28.009329mg | Unknown | 6 | EAR99 | No | 7.8W | Dual | 1.9W | 2 | 7 ns | 20ns | 5 ns | 25 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.043Ohm | 20V | 2 N-Channel (Dual) | 470pF @ 10V | 43m Ω @ 3.7A, 4.5V | 900mV @ 250μA | 12.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| APTM100VDA35T3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SP3 | 20 | 3 | EAR99 | AVALANCHE RATED | No | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | FET General Purpose Power | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 2 N-Channel (Dual) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| 2N7335 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n7335-datasheets-5965.pdf | 14-DIP (0.300, 7.62mm) | unknown | 1.4W | 750mA | 100V | 1.4W | 4 P-Channel | 1.4 Ω @ 500mA, 10V | 4V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTML1002U60R020T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP3 | 14 | 22 Weeks | 3 | EAR99 | No | 520W | UNSPECIFIED | 32 | 520W | 2 | FET General Purpose Power | R-XDFM-X14 | 20A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 74A | 2 N-Channel (Dual) | 6000pF @ 25V | 720m Ω @ 10A, 10V | 4V @ 2.5mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DSKM70CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | 2 N-Channel (Dual) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||
| JANTX2N7334 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/597 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv2n7334-datasheets-5954.pdf | 14-DIP (0.300, 7.62mm) | 14 | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | MIL-19500/597 | 1.4W | DUAL | NOT SPECIFIED | 14 | NOT SPECIFIED | 4 | Qualified | R-CDIP-T14 | 1A | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W | MO-036AB | 1A | 4A | 0.8Ohm | 75 mJ | 4 N-Channel | 700m Ω @ 600mA, 10V | 4V @ 250μA | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| AON6978 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-PowerVDFN | 16 Weeks | 8 | 4.3W | FET General Purpose Power | 28A | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6W 4.3W | 36A | 2 N-Channel (Half Bridge) | 1010pF @ 15V | 5.7m Ω @ 20A, 10V | 2.2V @ 250μA | 20A 28A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6971 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/alphaomegasemiconductorinc-aon6971-datasheets-6012.pdf | 8-PowerWDFN | 8 | 4.1W | FET General Purpose Power | 40A | 30V | METAL-OXIDE SEMICONDUCTOR | 5W 4.1W | 2 N-Channel (Half Bridge) | 1010pF @ 15V | 5.7m Ω @ 20A, 10V | 2.2V @ 250μA | 23A 40A | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTML202UM18R010T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | SP3 | 10 | 22 Weeks | 3 | EAR99 | No | 480W | UPPER | UNSPECIFIED | 25 | 480W | 2 | FET General Purpose Power | R-XUFM-X10 | 109A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 400A | 0.019Ohm | 2 N-Channel (Dual) | 9880pF @ 25V | 19m Ω @ 50A, 10V | 4V @ 2.5mA | 109A Tc | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| APTM10DHM09T3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 3 | EAR99 | No | 390W | 390W | 2 | FET General Purpose Power | 35 ns | 70ns | 125 ns | 95 ns | 139A | 30V | 100V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Asymmetrical | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DDAM45CT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60ddam45ct1g-datasheets-5970.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 2 N-Channel (Dual) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| APTM50DHM65T3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 22 Weeks | 3 | No | 390W | 390W | 2 | FET General Purpose Power | 60 ns | 70ns | 50 ns | 155 ns | 51A | 30V | 500V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Asymmetrical | 10800pF @ 25V | 78m Ω @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7334 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv2n7334-datasheets-5954.pdf | 14-DIP (0.300, 7.62mm) | 14 | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | MIL-19500/597 | 1.4W | DUAL | NOT SPECIFIED | 14 | NOT SPECIFIED | 4 | Qualified | R-CDIP-T14 | 1A | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W | MO-036AB | 1A | 4A | 0.8Ohm | 75 mJ | 4 N-Channel | 700m Ω @ 600mA, 10V | 4V @ 250μA | 60nC @ 10V | Standard |
