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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| ECH8667-TL-HX | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 8-SMD, Flat Lead | 8 Weeks | 8 | -5.5A | -30V | 39mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8653-S-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 8-SMD, Flat Lead | 8 | 2 | 7.5A | 20V | 20mOhm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC6601R-A-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 6-XFBGA, FCBGA | Lead Free | 4 Weeks | 68.407399mg | 6 | Halogen Free | 2W | Dual | 280 ns | 630ns | 47 μs | 53 μs | 13A | 12V | 24V | 11.5mOhm | 2 N-Channel (Dual) Common Drain | 48nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8660-S-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-SMD, Flat Lead | 11 Weeks | 8 | 2 | 4.5A | 30V | 59mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5489NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5489nlt1g-datasheets-1954.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 37.393021mg | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3W | 8 | 2 | Dual | FET General Purpose Power | 7 ns | 11ns | 21 ns | 31 ns | 12A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 330pF @ 25V | 65m Ω @ 15A, 10V | 2.5V @ 250μA | 4.5A | 12.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| QJD1210SA2 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/powerexinc-qjd1210sa2-datasheets-6346.pdf | Module | unknown | 415W | 100A | 1200V 1.2kV | 415W | 2 N-Channel (Dual) | 8200pF @ 10V | 17m Ω @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 6 Weeks | 8 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | Dual | 2.9W | 2 | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EMH2407-S-TL-HX | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2016 | 8-SMD, Flat Lead | 8 | No | 310 ns | 1.02μs | 2.25 μs | 3 μs | 6A | 12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA936EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia936edjt1ge3-datasheets-6242.pdf | PowerPAK® SC-70-6 Dual | 28.009329mg | Unknown | 27mOhm | 6 | EAR99 | 7.8W | NOT SPECIFIED | SIA936ED | 2 | Dual | NOT SPECIFIED | 20 ns | 20ns | 20 ns | 45 ns | 4.5A | 1.3V | 20V | 1.3V | 20V | 2 N-Channel (Dual) | 34m Ω @ 4A, 4.5V | 1.3V @ 250μA | 17nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QJD1210SB1 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8651R-R-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | 8-SMD, Flat Lead | 8 | No | 1.4W | 300 ns | 1μs | 2.5 μs | 4 μs | 10A | 12V | 14mOhm | 24V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDSS2407 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | 8 | 5 Weeks | 230.4mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2.27W | GULL WING | FDSS2407 | Dual | 2.27W | 2 | FET General Purpose Power | 630 ns | 1.2μs | 3.5 μs | 8.7 μs | 3.3A | 20V | SILICON | SWITCHING | 62V | METAL-OXIDE SEMICONDUCTOR | 3A | 0.11Ohm | 140 mJ | 62V | 2 N-Channel (Dual) | 300pF @ 15V | 110m Ω @ 3.3A, 10V | 3V @ 250μA | 4.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI7270DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7270dpt1ge3-datasheets-6137.pdf | PowerPAK® SO-8 Dual | 6 | 13 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 17.8W | C BEND | 260 | 8 | Dual | 30 | 3.6W | 2 | FET General Purpose Power | R-PDSO-C6 | 10 ns | 8ns | 8 ns | 18 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 8A | 35A | 30V | 2 N-Channel (Dual) | 900pF @ 15V | 21m Ω @ 8A, 10V | 2.8V @ 250μA | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| VQ2001P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | PDIP | 13 Weeks | 1.200007g | 14 | No | 2W | 4 | 2W | 4 | 150pF | 600mA | 20V | 30V | 2W | 2Ohm | 30V | 4 P-Channel | 150pF @ 15V | 2Ohm @ 1A, 12V | 4.5V @ 1mA | 600mA | Standard | 2 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ3001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq3001pe3-datasheets-6145.pdf | 15 Weeks | 14 | No | 2W | 2W | 4 | 110pF | 600mA | 20V | 30V | 2W | 2 N and 2 P-Channel | 110pF @ 15V | 1Ohm @ 1A, 12V | 2.5V @ 1mA | 850mA 600mA | Standard | 1 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4559-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fds4559f085-datasheets-6147.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 230.4mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | No | 2W | DUAL | GULL WING | 2W | 2 | Other Transistors | 10ns | 12 ns | 19 ns | 3.5A | 20V | SILICON | SWITCHING | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.055Ohm | 60V | N and P-Channel | 650pF @ 25V | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 4.5A 3.5A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 13 Weeks | 1.200007g | 14 | no | No | e0 | Tin/Lead (Sn/Pb) | 2W | 14 | 4 | 2W | FET General Purpose Power | 14-DIP | 400mA | 20V | 90V | METAL-OXIDE SEMICONDUCTOR | 90V | 4 N-Channel | 60pF @ 25V | 4.5 Ω @ 1A, 10V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHC2300,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-phc2300118-datasheets-6163.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | GULL WING | 260 | 8 | 30 | 1.6W | 2 | Other Transistors | Not Qualified | 340mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 300V | 300V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 0.34A | 6Ohm | N and P-Channel | 102pF @ 50V | 6 Ω @ 170mA, 10V | 2V @ 1mA | 340mA 235mA | 6.24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2004 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | CDIP | 15 Weeks | 1.200007g | 14 | No | 2W | 4 | 1.3W | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1Ohm | 30V | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ962EP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj962ept1ge3-datasheets-6203.pdf | PowerPAK® SO-8 Dual | Lead Free | 4 | Unknown | 60mOhm | 8 | yes | EAR99 | No | 25W | SINGLE | GULL WING | 260 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-PSSO-G4 | 5 ns | 11ns | 6 ns | 16 ns | 8A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 8A | 5 mJ | 2 N-Channel (Dual) | 475pF @ 25V | 60m Ω @ 4.3A, 10V | 2.5V @ 250μA | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SIA915DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia915djt1ge3-datasheets-6219.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | 28.009329mg | Unknown | 6 | EAR99 | No | 6.5W | 6 | 2 | Dual | 1.9W | 2 | Other Transistors | 35 ns | 25ns | 10 ns | 15 ns | 3.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 4.5A | 0.087Ohm | 2 P-Channel (Dual) | 275pF @ 15V | -1 V | 87m Ω @ 2.9A, 10V | 2.2V @ 250μA | 4.5A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF3575DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 2 (1 Year) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf3575dtrpbf-datasheets-6222.pdf | 32-PowerWFQFN | 15 Weeks | EAR99 | YES | 150°C | FET General Purpose Power | 25V | METAL-OXIDE SEMICONDUCTOR | 303A | 2 N-Channel (Dual) | 303A Tc | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ2001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | 14-DIP | 14 | 14 | no | EAR99 | No | e0 | TIN LEAD | 2W | DUAL | 2W | 4 | 600mA | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.6A | 2A | 2Ohm | 60 pF | 4 P-Channel | 150pF @ 15V | 30ns | 30ns | 2 Ω @ 1A, 12V | 4.5V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHN210T,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-phn210t118-datasheets-6170.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.45mm | 4mm | Lead Free | 8 | 16 Weeks | No SVHC | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | 2W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Power | 6 ns | 8ns | 15 ns | 21 ns | 2.4A | 20V | 30V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | MS-012AA | 3.4A | 14A | 0.1Ohm | 13 mJ | 30V | 2 N-Channel (Dual) | 250pF @ 20V | 2 V | 100m Ω @ 2.2A, 10V | 2.8V @ 1mA | 6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SIZ914DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-siz914dtt1ge3-datasheets-6251.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 13 Weeks | 8 | EAR99 | unknown | 100W | NO LEAD | SIZ914 | 2 | Dual | 2 | R-PDSO-N6 | 40 ns | 127ns | 19 ns | 40 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22.7W 100W | 16A | 0.0064Ohm | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 1208pF @ 15V | 6.4m Ω @ 19A, 10V | 2.4V @ 250μA | 16A 40A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| FDS6912 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds6912-datasheets-6276.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 187mg | No SVHC | 28MOhm | 8 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 900mW | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 8 ns | 13ns | 8 ns | 18 ns | 6A | 25V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 6A | 30V | 2 N-Channel (Dual) | 740pF @ 15V | 2 V | 28m Ω @ 6A, 10V | 3V @ 250μA | 10nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| APTML102UM09R004T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP3 | 10 | 22 Weeks | 3 | EAR99 | No | 480W | UPPER | UNSPECIFIED | 25 | 480W | 2 | FET General Purpose Power | R-XUFM-X10 | 154A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 2 N-Channel (Dual) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 154A Tc | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4618DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4618dyt1e3-datasheets-9868.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 506.605978mg | No SVHC | 8 | No | 2.35W | 2 | Dual | 2 | 8-SO | 1.535nF | 11.4A | 16V | 30V | 1V | 1.98W 4.16W | 10mOhm | 30V | 2 N-Channel (Half Bridge) | 1535pF @ 15V | 17mOhm @ 8A, 10V | 2.5V @ 1mA | 8A 15.2A | 44nC @ 10V | Standard | 17 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90AM60SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc90am60sctg-datasheets-6039.pdf | SP4 | 9 | 22 Weeks | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 10 | 2 | R-XUFM-X9 | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 150A | 0.06Ohm | 2 N-Channel (Half Bridge) | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIA920DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia920djt1ge3-datasheets-6134.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 2 | FET General Purpose Powers | 5 ns | 12ns | 7 ns | 20 ns | 4.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | 8V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 2 N-Channel (Dual) | 470pF @ 4V | 27m Ω @ 5.3A, 4.5V | 700mV @ 250μA | 7.5nC @ 4.5V | Logic Level Gate |
