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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| PMDPB95XNE,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/nxpusainc-pmdpb95xne115-datasheets-6111.pdf | 6-UDFN Exposed Pad | 6 | 30V | 475mW | 2 N-Channel (Dual) | 143pF @ 15V | 120m Ω @ 2A, 4.5V | 1.5V @ 250μA | 2.4A | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TMC1420-LA | Trinamic Motion Control GmbH |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2014 | 8-PowerTDFN | 8 | 3.57W | 7.3A | 40V | N and P-Channel | 1050pF @ 15V | 26.5m Ω @ 7A, 10V | 3V @ 250μA | 8.8A 7.3A | 11.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2060UFDB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2060ufdb7-datasheets-6500.pdf | 6-UDFN Exposed Pad | 6 | 6 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 3.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 0.09Ohm | 2 P-Channel (Dual) | 881pF @ 10V | 90m Ω @ 2.9A, 4.5V | 1.4V @ 250μA | 18nC @ 8V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C87NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | /files/onsemiconductor-ntmfd4c87nt3g-datasheets-6548.pdf | 8-PowerTDFN | Lead Free | 24 Weeks | 8 | yes | e3 | Tin (Sn) | 1.1W | FET General Purpose Power | 14.9A | 30V | METAL-OXIDE SEMICONDUCTOR | 26.6A | 2 N-Channel (Dual) Asymmetrical | 1252pF @ 15V | 5.4m Ω @ 30A, 10V | 2.2V @ 250μA | 11.7A 14.9A | 22.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76413DK8T-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-hufa76413dk8tf085-datasheets-6406.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | ULTRA-LOW RESISTANCE | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | GULL WING | 260 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5W | 260 mJ | 2 N-Channel (Dual) | 620pF @ 25V | 49m Ω @ 5.1A, 10V | 3V @ 250μA | 5.1A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| EMH2407-S-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | 8-SMD, Flat Lead | 4 Weeks | 8 | 1.3W | 6A | 25mOhm | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QJD1210SA1 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | /files/powerexinc-qjd1210sa1-datasheets-6415.pdf | Module | unknown | 520W | 100A | 1200V 1.2kV | 520W | 2 N-Channel (Dual) | 8200pF @ 10V | 17m Ω @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | Dual | 2.9W | 2 | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5853NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5853nt1g-datasheets-0546.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 3.1W | 8 | 3.1W | 2 | FET General Purpose Powers | 9 ns | 20ns | 3 ns | 21 ns | 12A | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | 53A | 2 N-Channel (Dual) | 1225pF @ 25V | 10m Ω @ 15A, 10V | 4V @ 250μA | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4257DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | /files/infineontechnologies-irfh4257dtrpbf-datasheets-6423.pdf | 8-PowerVDFN | Lead Free | 8 | EAR99 | 28W | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 12 ns | 51ns | 25 ns | 20 ns | 25A | 20V | 25V | 25W 28W | 2 N-Channel (Dual) | 1321pF @ 13V | 3.4m Ω @ 25A, 10V | 2.1V @ 35μA | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC1029UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmc1029ufdb13-datasheets-2811.pdf | 6-UDFN Exposed Pad | 6 | 6 | EAR99 | Gold | e4 | 1.4W | DUAL | NO LEAD | 260 | 30 | 2 | 3.8A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 0.029Ohm | N and P-Channel | 914pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 5.6A 3.8A | 19.6nC @ 8V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| FW276-TL-2H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2006 | /files/onsemiconductor-fw276tl2h-datasheets-6438.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.375mm | 3.9mm | Lead Free | No SVHC | 8 | yes | EAR99 | e3 | Tin (Sn) | 1.6W | NOT SPECIFIED | NOT SPECIFIED | 2W | 2 | 7 ns | 15 ns | 700mA | 30V | 450V | 4.5V | 2 N-Channel (Dual) | 55pF @ 20V | 12.1 Ω @ 350mA, 10V | 4.5V @ 1mA | 3.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9389PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9389trpbf-datasheets-4013.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 11 Weeks | EAR99 | 2W | DUAL | GULL WING | NOT SPECIFIED | IRF9389 | NOT SPECIFIED | 2 | Other Transistors | R-PDSO-G8 | 4.6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 6.8A | 34A | 0.027Ohm | N and P-Channel | 398pF @ 15V | 27m Ω @ 6.8A, 10V | 2.3V @ 10μA | 6.8A 4.6A | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| LP1030DK1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -25°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -25°C | ROHS3 Compliant | 2014 | /files/microchiptechnology-lp1030dk1g-datasheets-6462.pdf | SC-74A, SOT-753 | SOT-23-5 | 10.8pF | 300V | 2 P-Channel (Dual) | 10.8pF @ 25V | 180Ohm @ 20mA, 7V | 2.4V @ 1mA | Standard | 180 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VEC2616-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-vec2616tlw-datasheets-6453.pdf | 8-SMD, Flat Lead | 2.9mm | 750μm | 2.3mm | Lead Free | 8 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | 1W | 8 | Dual | 1W | 2 | 65 ns | 2.5A | 20V | 60V | N and P-Channel | 505pF @ 20V | 80m Ω @ 1.5A, 10V | 2.6V @ 1mA | 3A 2.5A | 10nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8601M-C-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | 8-SMD, Flat Lead | 8 | No | 1.5W | 1.6W | 300 ns | 1μs | 1.8 μs | 3 μs | 8A | 12V | 24V | 24V | 2 N-Channel (Dual) Common Drain | 23m Ω @ 4A, 4.5V | 7.5nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8601M-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-ech8601mtlh-datasheets-6460.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 8 | 8 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 1.5W | 8 | Dual | 2 | 300 ns | 1μs | 1.8 μs | 3 μs | 8A | 12V | SILICON | SWITCHING | 24V | 24V | METAL-OXIDE SEMICONDUCTOR | 8A | 60A | 0.03Ohm | 2 N-Channel (Dual) Common Drain | 23m Ω @ 4A, 4.5V | 1.3V @ 1mA | 8A Ta | 7.5nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||
| IRFHE4250DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | RoHS Compliant | 2004 | /files/infineontechnologies-irfhe4250dtrpbf-datasheets-6360.pdf | 32-PowerWFQFN | 6mm | 900μm | 5mm | Lead Free | 18 Weeks | No SVHC | 30 | EAR99 | 156W | IRFHE4250 | Dual | 156W | 2 | FET General Purpose Power | 17 ns | 54ns | 16 ns | 24 ns | 303A | 16V | 25V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 2 N-Channel (Dual) | 1735pF @ 13V | 2.75m Ω @ 27A, 10V | 2.1V @ 35μA | 86A 303A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| LN100LA-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -25°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/microchiptechnology-ln100lag-datasheets-6488.pdf | 6-VFLGA | 6 | 6 | EAR99 | 350mW | BOTTOM | BUTT | 260 | 2 | Dual | 40 | 2 | 3mA | 1.6V | SILICON | AMPLIFIER | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 600V | 2 N-Channel (Cascoded) | 50pF @ 25V | 3000 Ω @ 2mA, 2.8V | 1.6V @ 10μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6603-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | /files/onsemiconductor-mch6603tlh-datasheets-6379.pdf | 6-SMD, Flat Leads | Lead Free | 6 | LIFETIME (Last Updated: 22 hours ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | 800mW | 6 | Dual | 800mW | 1 | 20 ns | 35ns | 150 ns | 160 ns | 140mA | 10V | 50V | -50V | 2 P-Channel (Dual) | 7.4pF @ 10V | 23 Ω @ 40mA, 4V | 1.4nC @ 10V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9395MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2013 | /files/infineontechnologies-irf9395mtrpbf-datasheets-9852.pdf | DirectFET™ Isometric MC | 30V | 2.1W | 2 P-Channel (Dual) | 3241pF @ 15V | 7m Ω @ 14A, 10V | 2.4V @ 50μA | 14A | 64nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90AM60T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90am60t1g-datasheets-6401.pdf | SP1 | 12 | 22 Weeks | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 12 | 2 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 0.06Ohm | 2 N-Channel (Half Bridge) | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||
| NVMFD5489NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5489nlt1g-datasheets-1954.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 37.393021mg | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3W | 8 | 2 | Dual | FET General Purpose Power | 7 ns | 11ns | 21 ns | 31 ns | 12A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 330pF @ 25V | 65m Ω @ 15A, 10V | 2.5V @ 250μA | 4.5A | 12.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| QJD1210SA2 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/powerexinc-qjd1210sa2-datasheets-6346.pdf | Module | unknown | 415W | 100A | 1200V 1.2kV | 415W | 2 N-Channel (Dual) | 8200pF @ 10V | 17m Ω @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 6 Weeks | 8 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | Dual | 2.9W | 2 | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| EMH2407-S-TL-HX | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2016 | 8-SMD, Flat Lead | 8 | No | 310 ns | 1.02μs | 2.25 μs | 3 μs | 6A | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA936EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia936edjt1ge3-datasheets-6242.pdf | PowerPAK® SC-70-6 Dual | 28.009329mg | Unknown | 27mOhm | 6 | EAR99 | 7.8W | NOT SPECIFIED | SIA936ED | 2 | Dual | NOT SPECIFIED | 20 ns | 20ns | 20 ns | 45 ns | 4.5A | 1.3V | 20V | 1.3V | 20V | 2 N-Channel (Dual) | 34m Ω @ 4A, 4.5V | 1.3V @ 250μA | 17nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| QJD1210SB1 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8651R-R-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | 8-SMD, Flat Lead | 8 | No | 1.4W | 300 ns | 1μs | 2.5 μs | 4 μs | 10A | 12V | 14mOhm | 24V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC6602R-A-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 6-XFBGA, FCBGA | Lead Free | 4 Weeks | 6 | Halogen Free | 2W | Dual | 530 ns | 2.1μs | 5.5 μs | 6.2 μs | 53A | 12V | 12V | 5.9mOhm | 2 N-Channel (Dual) Common Drain | 55nC @ 4.5V | Logic Level Gate, 2.5V Drive |
