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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| 2N7002DWA-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-2n7002dwa7-datasheets-5882.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6.010099mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 300mW | 260 | 30 | 300mW | 2 | FET General Purpose Powers | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 180mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 60V | 2 N-Channel (Dual) | 22pF @ 25V | 6 Ω @ 115mA, 10V | 2.5V @ 250μA | 0.87nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| UPA2670T1R-E2-AX | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-upa2670t1re2ax-datasheets-5885.pdf | 6-WDFN Exposed Pad | yes | EAR99 | 2.3W | NOT SPECIFIED | 6 | NOT SPECIFIED | Other Transistors | 3A | 20V | METAL-OXIDE SEMICONDUCTOR | 2.3W | 3A | 2 P-Channel (Dual) | 473pF @ 10V | 79m Ω @ 1.5A, 4.5V | 5.1nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA922EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia922edjt1ge3-datasheets-5889.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 6 | yes | EAR99 | No | 1.9W | Dual | 2 | FET General Purpose Power | 60ns | 45 ns | 25 ns | 4.4A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | 0.072Ohm | 30V | 2 N-Channel (Dual) | 64m Ω @ 3A, 4.5V | 1.4V @ 250μA | 4.5A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| ALD111910PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | RoHS Compliant | 10 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M3FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m3tb-datasheets-0418.pdf | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 8 | EAR99 | No | 2W | *M3 | Dual | 2W | 25ns | 25 ns | 60 ns | 4.5A | 20V | 30V | 2.5V | 30V | N and P-Channel | 230pF @ 10V | 2.5 V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A 4.5A | 5.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90TAM60TPG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90tam60tpg-datasheets-5908.pdf | SP6 | 23 | 22 Weeks | 6 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 23 | 6 | FET General Purpose Power | R-XUFM-X23 | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 150A | 1940 mJ | 6 N-Channel (3-Phase Bridge) | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||
| SI4942DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4942dyt1ge3-datasheets-2263.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4942 | 8 | Dual | 40 | 1.1W | 2 | FET General Purpose Powers | 4nF | 13 ns | 10ns | 10 ns | 31 ns | 5.3A | 20V | 40V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 40V | 2 N-Channel (Dual) | 3 V | 21m Ω @ 7.4A, 10V | 3V @ 250μA | 32nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| GA100SCPL12-227E | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2015 | SOT-227 | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC6070LFDH-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc6070lfdh7-datasheets-5845.pdf | 8-WDFN | 3.05mm | 800μm | 3.05mm | 8 | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 1.4W | DUAL | 1.4W | 2 | Other Transistors | 9.6 ns | 61 ns | 2.4A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.1A | 60V | N and P-Channel | 731pF @ 20V | 85m Ω @ 1.5A, 10V | 3V @ 250μA | 3.1A 2.4A | 11.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| AON6934A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aon6934a-datasheets-2609.pdf | 8-PowerVDFN | 16 Weeks | 8 | 4.3W | 30A | 30V | 3.6W 4.3W | 2 N-Channel (Half Bridge) | 1037pF @ 15V | 5.2m Ω @ 20A, 10V | 2.2V @ 250μA | 22A 30A | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4562DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4562dyt1ge3-datasheets-2293.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | Unknown | 25mOhm | 8 | yes | EAR99 | No | e4 | Silver (Ag) | 2W | DUAL | GULL WING | 260 | SI4562 | 8 | 2 | 30 | 2W | 1 | Other Transistors | 27 ns | 32ns | 45 ns | 95 ns | 7.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 40A | 20V | N and P-Channel | 600 mV | 25m Ω @ 7.1A, 4.5V | 1.6V @ 250μA | 50nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||
| AON2809 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | /files/alphaomegasemiconductor-aon2809-datasheets-2614.pdf | 6-WDFN Exposed Pad | 2.1W | 2A | 12V | 2.1W | 2 P-Channel (Dual) | 415pF @ 6V | 68m Ω @ 2A, 4.5V | 900mV @ 250μA | 4.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4539ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4539adyt1ge3-datasheets-2229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 506.605978mg | 36mOhm | 8 | No | 30W | SI4539 | 2 | 1.1W | 2 | 8-SO | 435pF | 7 ns | 10ns | 10 ns | 40 ns | 16A | 20V | 30V | 1.1W | 53mOhm | 30V | N and P-Channel | 36mOhm @ 5.9A, 10V | 1V @ 250μA (Min) | 4.4A 3.7A | 20nC @ 10V | Logic Level Gate | 24 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SI4532ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si4532adyt1ge3-datasheets-1111.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 80mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.2W | DUAL | GULL WING | 260 | SI4532 | 8 | 2 | 40 | 2W | 2 | 8 ns | 9ns | 10 ns | 21 ns | 4.9A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 1.13W 1.2W | 3.7A | 30V | N and P-Channel | 1 V | 53m Ω @ 4.9A, 10V | 1V @ 250μA (Min) | 3.7A 3A | 16nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||
| AON6973A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6973a-datasheets-5721.pdf | 8-PowerVDFN | 8 | 4.3W | 8-DFN (5x6) | 1.037nF | 30A | 30V | 3.6W 4.3W | 2 N-Channel (Half Bridge) | 1037pF @ 15V | 5.2mOhm @ 20A, 10V | 2.2V @ 250μA | 22A 30A | 22nC @ 10V | Logic Level Gate | 5.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4542DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4542dyt1ge3-datasheets-2215.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4542 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 10ns | 25 ns | 55 ns | 5.7A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.9A | 40A | 30V | N and P-Channel | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 50nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI4920DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4920dyt1ge3-datasheets-2296.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 25mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4920 | 8 | Dual | 40 | 2W | 2 | FET General Purpose Powers | Not Qualified | 790pF | 12 ns | 10ns | 15 ns | 60 ns | 6.9A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 40A | 30V | 2 N-Channel (Dual) | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 23nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI4966DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4966dyt1ge3-datasheets-2310.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 25mOhm | 8 | EAR99 | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4966 | 8 | 2 | Dual | 40 | 2W | 2 | Not Qualified | 40 ns | 40ns | 40 ns | 90 ns | 7.1A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 40A | 20V | 2 N-Channel (Dual) | 600 mV | 25m Ω @ 7.1A, 4.5V | 1.5V @ 250μA | 50nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI4816DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4816dyt1ge3-datasheets-2280.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 22MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | 40 | 7.7W | 2 | FET General Purpose Power | 15 ns | 5ns | 12 ns | 44 ns | 5.3A | 20V | SILICON | COMPLEX | METAL-OXIDE SEMICONDUCTOR | 1W 1.25W | 30V | 2 N-Channel (Half Bridge) | 2 V | 22m Ω @ 6.3A, 10V | 2V @ 250μA | 5.3A 7.7A | 12nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| EMH2314-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | /files/onsemiconductor-emh2314tlh-datasheets-5683.pdf | 8-SMD, Flat Lead | 2mm | 750μm | 1.7mm | Lead Free | 4 Weeks | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 1.2W | 8 | Dual | 1.2W | 16 ns | 77ns | 58 ns | 79 ns | 5A | 10V | 12V | -12V | 2 P-Channel (Dual) | 1300pF @ 6V | 37m Ω @ 2.5A, 4.5V | 12nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| AON7826 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2010 | 8-PowerSMD, Flat Leads | 3.1W | 8-DFN-EP (3x3) | 630pF | 9A | 20V | 3.1W | 2 N-Channel (Dual) | 630pF @ 10V | 23mOhm @ 9A, 10V | 1.1V @ 250μA | 9A | 15nC @ 10V | Logic Level Gate | 23 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2375T1P-E1-A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-upa2375t1pe1a-datasheets-5694.pdf | 6-XFLGA | 16 Weeks | 6 | 1.75W | 6-EFLIP-LGA | 1.75W | 2 N-Channel (Dual) Common Drain | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ790DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz790dtt1ge3-datasheets-5709.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | 48W | DUAL | C BEND | SIZ790 | 6 | 2 | 2 | FET General Purpose Power | 15ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.1V | 27W 48W | 70A | 0.0093Ohm | 13 mJ | 30V | 2 N-Channel (Half Bridge) | 830pF @ 15V | 9.3m Ω @ 15A, 10V | 2.2V @ 250μA | 16A 35A | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI5999EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5999edut1ge3-datasheets-5713.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | Unknown | 59mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 10.4W | C BEND | 260 | SI5999 | 8 | 2 | Dual | 30 | 2.3W | 2 | Other Transistors | Not Qualified | R-PDSO-C6 | 17 ns | 21ns | 13 ns | 26 ns | 5A | 12V | SILICON | DRAIN | SWITCHING | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | -20V | 2 P-Channel (Dual) | 496pF @ 10V | -600 mV | 59m Ω @ 3.5A, 4.5V | 1.5V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| AO5803E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-563, SOT-666 | 400mW | Other Transistors | 600mA | 20V | METAL-OXIDE SEMICONDUCTOR | 0.6A | 2 P-Channel (Dual) | 100pF @ 10V | 800m Ω @ 600mA, 4.5V | 900mV @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ900DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz900dtt1ge3-datasheets-5706.pdf | 6-PowerPair™ | 6mm | 750μm | 5mm | 8 | 15 Weeks | Unknown | 8 | EAR99 | No | 100W | DUAL | C BEND | SIZ900 | 8 | 2 | 2 | FET General Purpose Power | 10 ns | 24A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 48W 100W | 90A | 30V | 2 N-Channel (Half Bridge) | 1830pF @ 15V | 7.2m Ω @ 19.4A, 10V | 2.4V @ 250μA | 24A 28A | 45nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIZ916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-siz916dtt1ge3-datasheets-5724.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 15 Weeks | Unknown | 8 | EAR99 | No | 100W | SIZ916 | 2 | Dual | 27 ns | 83ns | 10 ns | 66 ns | 40A | 2.4V | 1.2V | 22.7W 100W | 30V | 2 N-Channel (Half Bridge) | 1208pF @ 15V | 6.4m Ω @ 19A, 10V | 2.4V @ 250μA | 16A 40A | 26nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| AON6938 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2011 | 8-PowerVDFN | 8 | 4.3W | 33A | 30V | 3.6W 4.3W | 2 N-Channel (Half Bridge) | 1150pF @ 15V | 8.2m Ω @ 20A, 10V | 2.5V @ 250μA | 17A 33A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si9936bdyt1ge3-datasheets-2479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 35mOhm | 8 | No | 1.1W | SI9936 | 2 | Dual | 1.1W | 2 | 8-SO | 10 ns | 15ns | 15 ns | 25 ns | 6A | 20V | 30V | 1.1W | 35mOhm | 30V | 2 N-Channel (Dual) | 35mOhm @ 6A, 10V | 3V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | 35 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| AON6936 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2011 | 8-PowerVDFN | 8 | 4.3W | 40A | 30V | 3.6W 4.3W | 2 N-Channel (Half Bridge) | 984pF @ 15V | 4.9m Ω @ 20A, 10V | 2.5V @ 250μA | 22A 40A | 24nC @ 10V | Logic Level Gate |
