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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Packaging | Moisture Sensitivity Level (MSL) | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Noise Figure | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | DS Breakdown Voltage-Min | FET Technology | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BF556B,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | DEPLETION MODE | ROHS3 Compliant | 2013 | /files/nxpusainc-bf556c215-datasheets-6143.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF556 | 3 | 150°C | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.25W | 30V | JUNCTION | VERY HIGH FREQUENCY B | 13mA | TO-236AB | N-Channel JFET | |||||||||||||||||||
| BF861A,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 25V | DEPLETION MODE | ROHS3 Compliant | 2001 | /files/nxpusainc-bf861a215-datasheets-6459.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | LOW NOISE | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF861 | 3 | 150°C | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.25W | 25V | JUNCTION | 6.5mA | TO-236AB | 2.7 pF | N-Channel JFET | |||||||||||||||||
| BLF6G10-160RN,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 922.5MHz~957.5MHz | 2009 | /files/ampleonusainc-blf6g10160rn112-datasheets-6564.pdf | SOT-502A | BLF6G10 | 22.5dB | 32W | 39A | 1.2A | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||
| BLF6G10LS-260PRN:1 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 917.5MHz~962.5MHz | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/ampleonusainc-blf6g10ls260prn1-datasheets-6466.pdf | SOT539B | 4 | EAR99 | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF6G10 | NOT SPECIFIED | 2 | 22dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 40W | 64A | 1.8A | 64A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||
| BLF3G21-30,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | /files/ampleonusainc-blf3g2130112-datasheets-6574.pdf | SOT467C | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | 245 | BLF3G21 | 30 | 1 | 13.5dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 4.5A | 450mA | 4.5A | LDMOS | 26V | |||||||||||||||||||
| BLF6G10L-260PRN:11 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 917.5MHz~962.5MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf6g10ls260prn1-datasheets-6466.pdf | SOT539A | 4 | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF6G10 | NOT SPECIFIED | 2 | 22dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 40W | 64A | 1.8A | 64A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||
| BLF246,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 108MHz | Non-RoHS Compliant | 2003 | /files/ampleonusainc-blf246112-datasheets-6481.pdf | SOT-121B | BLF246 | 18dB | CRFM4 | 80W | 13A | 100mA | N-Channel | 28V | ||||||||||||||||||||||||||||||||||||||
| BF1105WR,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | ROHS3 Compliant | 1997 | /files/nxpusainc-bf1105215-datasheets-6250.pdf | SC-82A, SOT-343 | BF1105 | 4 | 20dB | 2013-06-14 00:00:00 | 1.7dB | 30mA | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||||
| BF1204,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1204115-datasheets-6491.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1204 | 6 | 150°C | 40 | 2 | FET General Purpose Power | 30dB | Not Qualified | R-PDSO-G6 | 0.9dB | SILICON | COMPLEX | AMPLIFIER | 0.2W | 10V | METAL-OXIDE SEMICONDUCTOR | 30mA | 12mA | 0.03A | N-Channel Dual Gate | 5V | ||||||||||||||
| BLF6G10-45,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 922.5MHz~957.5MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/ampleonusainc-blf6g1045135-datasheets-6225.pdf | SOT-608A | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G10 | NOT SPECIFIED | 1 | 22.5dB | S-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 1W | 13A | 350mA | 13A | LDMOS | 28V | |||||||||||||||||||
| BF1212WR,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/nxpusainc-bf1212wr115-datasheets-6418.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1212 | 4 | 150°C | 40 | 1 | FET General Purpose Powers | 30dB | Not Qualified | R-PDSO-G4 | 0.9dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 12mA | 0.03A | 0.03 pF | N-Channel Dual Gate | 5V | ||||||||||||
| BF909WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/nxpusainc-bf909wr115-datasheets-6423.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF909 | 4 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 2dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 7V | METAL-OXIDE SEMICONDUCTOR | 40mA | 15mA | 0.04A | 0.05 pF | N-Channel Dual Gate | 5V | ||||||||||||||
| BF904WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 200MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/nxpusainc-bf904wr115-datasheets-6428.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF904 | 4 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 1dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 0.28W | 7V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | 0.035 pF | N-Channel Dual Gate | 5V | |||||||||||||
| BLF7G22LS-130,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf7g22ls130118-datasheets-6439.pdf | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF7G22 | NOT SPECIFIED | 1 | 18.5dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 30W | 28A | 950mA | 28A | LDMOS | 28V | |||||||||||||||||||
| BLF404,115 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 40V | 500MHz | Non-RoHS Compliant | 2003 | /files/ampleonusainc-blf404115-datasheets-6441.pdf | SOT-409A | 11.5dB | 8-CSMD | 4W | 1.5A | 50mA | N-Channel | 12.5V | |||||||||||||||||||||||||||||||||||||||
| BLA0912-250R,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 75V | 960MHz~1.22GHz | 2010 | /files/ampleonusainc-bla0912250r112-datasheets-6339.pdf | SOT-502A | 13dB | 250W | LDMOS | 36V | |||||||||||||||||||||||||||||||||||||||||||
| BLF6G38-100,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.4GHz~3.6GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/ampleonusainc-blf6g38100112-datasheets-6443.pdf | SOT-502A | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G38 | NOT SPECIFIED | 1 | 13dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 18.5W | 34A | 1.05A | 34A | LDMOS | 28V | |||||||||||||||||||
| BF904,235 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 200MHz | ROHS3 Compliant | 1999 | /files/nxpusainc-bf904235-datasheets-6346.pdf | SOT-143R | 53 Weeks | BF904 | 4 | 2013-06-14 00:00:00 | 1dB | 30mA | 10mA | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||
| BLF7G22LS-160,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | SOT-502B | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF7G22 | NOT SPECIFIED | 1 | 18dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 43W | 36A | 1.3A | 36A | LDMOS | 28V | ||||||||||||||||||||
| BF904,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 200MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/nxpusainc-bf904235-datasheets-6346.pdf | TO-253-4, TO-253AA | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF904 | 4 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 1dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 7V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | 0.035 pF | N-Channel Dual Gate | 5V | |||||||||||||||
| PTVA104501EH-V1-R250 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G27-45,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.7GHz | Non-RoHS Compliant | 2008 | /files/ampleonusainc-blf6g2745112-datasheets-6367.pdf | SOT-608A | BLF6G27 | 18dB | CDFM2 | 7W | 20A | 350mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||
| BLF6G10-45,135 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 922.5MHz~957.5MHz | ENHANCEMENT MODE | Non-RoHS Compliant | 2013 | /files/ampleonusainc-blf6g1045135-datasheets-6225.pdf | SOT-608A | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF6G10 | NOT SPECIFIED | 1 | 22.5dB | S-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 1W | 13A | 350mA | 13A | LDMOS | 28V | |||||||||||||||||||
| BF1216,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | ROHS3 Compliant | 2008 | /files/nxpusainc-bf1216115-datasheets-6152.pdf | 6-TSSOP, SC-88, SOT-363 | BF1216 | 6 | 30dB | 2013-06-14 00:00:00 | 1dB | 30mA | 19mA | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||
| BF998WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 12V | 200MHz | DUAL GATE, DEPLETION MODE | ROHS3 Compliant | 1995 | /files/nxpusainc-bf998wr115-datasheets-6354.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF998 | 4 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 0.6dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.3W | 12V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | N-Channel Dual Gate | 8V | |||||||||||||||
| BF1201WR,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1201r215-datasheets-6101.pdf | SC-82A, SOT-343 | unknown | BF1201 | 4 | 29dB | 2013-06-14 00:00:00 | 1dB | 30mA | 15mA | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||
| BF1201WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1201r215-datasheets-6101.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1201 | 4 | 150°C | 40 | 1 | FET General Purpose Power | 29dB | Not Qualified | R-PDSO-G4 | 1dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.2W | 10V | METAL-OXIDE SEMICONDUCTOR | 30mA | 15mA | 0.03A | 0.03 pF | N-Channel Dual Gate | 5V | ||||||||||||
| BF1109R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 11V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf1109r215-datasheets-6315.pdf | SOT-143R | 4 | EAR99 | LOW NOISE | unknown | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | BF1109 | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | 20dB | Not Qualified | R-PDSO-G4 | 2013-06-14 00:00:00 | 1.5dB | SILICON | SINGLE | SOURCE | AMPLIFIER | 11V | METAL-OXIDE SEMICONDUCTOR | 30mA | 0.03A | 0.04 pF | N-Channel Dual Gate | 9V | ||||||||||||||
| BF909R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | ROHS3 Compliant | 1998 | /files/nxpusainc-bf909r215-datasheets-6115.pdf | SOT-143R | unknown | BF909 | 4 | 2013-06-14 00:00:00 | 2dB | 40mA | 15mA | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||
| MRF8P29300HSR6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 65V | 2.9GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | NI-1230S | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRF8P29300 | 225°C | 40 | 2 | FET General Purpose Power | 13.3dB | Not Qualified | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 320W | 100mA | LDMOS (Dual) | 30V |
