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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BF1101R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | ROHS3 Compliant | 1999 | /files/nxpusainc-bf1101wr115-datasheets-6229.pdf | SOT-143R | yes | unknown | BF1101 | 2013-06-14 00:00:00 | 1.7dB | 30mA | 12mA | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF994S,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | 200MHz | DUAL GATE, DEPLETION MODE | ROHS3 Compliant | 1996 | /files/nxpusainc-bf994s215-datasheets-6876.pdf | TO-253-4, TO-253AA | 4 | 13 Weeks | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF994 | 4 | 150°C | 40 | 1 | FET General Purpose Power | 25dB | Not Qualified | R-PDSO-G4 | 1dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.2W | 20V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | N-Channel Dual Gate | 15V | ||||||||||||||||||||||||||||||||
| BF998,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 12V | 200MHz | DUAL GATE, DEPLETION MODE | ROHS3 Compliant | 1996 | /files/nxpusainc-bf998r215-datasheets-6475.pdf | TO-253-4, TO-253AA | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF998 | 4 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 0.6dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.2W | 12V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | N-Channel Dual Gate | 8V | |||||||||||||||||||||||||||||||||
| BF1100WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 14V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/nxpusainc-bf1100wr115-datasheets-6890.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | BF1100 | 4 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 2dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 14V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | 0.035 pF | N-Channel Dual Gate | 9V | ||||||||||||||||||||||||||||||||
| BF1208D,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nxpusainc-bf1208d115-datasheets-6900.pdf | SOT-563, SOT-666 | 6 | EAR99 | unknown | 8541.21.00.75 | e3 | TIN | YES | FLAT | 260 | 6 | 150°C | 40 | 1 | 32dB | Not Qualified | R-PDSO-F6 | 0.9dB | SILICON | SINGLE | AMPLIFIER | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 19mA | 0.03A | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||
| PD84010S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd84010se-datasheets-6908.pdf | 8A | PowerSO-10 Exposed Bottom Pad | 2 | 3 | EAR99 | e3 | MATTE TIN | 95W | DUAL | FLAT | NOT SPECIFIED | PD84010 | 10 | Single | NOT SPECIFIED | 95W | 1 | FET General Purpose Power | 16.3dB | Not Qualified | R-PDSO-F2 | 8A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 10W | 2W | 300mA | 8A | 40V | LDMOS | 7.5V | ||||||||||||||||||||||||||||
| BF545A,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | DEPLETION MODE | ROHS3 Compliant | 2001 | /files/nxpusainc-bf545a215-datasheets-6901.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | 8541.21.00.75 | e3 | TIN | YES | DUAL | GULL WING | 260 | BF545 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.25W | 30V | JUNCTION | VERY HIGH FREQUENCY B | 6.5mA | TO-236AB | N-Channel JFET | |||||||||||||||||||||||||||||||||||||
| SD57060-01 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | 65V | 7A | M250 | Contains Lead | 2 | 250 | NRND (Last Updated: 8 months ago) | EAR99 | 108W | DUAL | FLAT | NOT SPECIFIED | SD57060 | 2 | Single | NOT SPECIFIED | 108W | 1 | FET General Purpose Power | 15dB | Not Qualified | R-PDFP-F2 | 88pF | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 60W | 65V | 100mA | 7A | 65V | LDMOS | 28V | |||||||||||||||||||||||||||
| BF1211WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/nxpusainc-bf1211215-datasheets-6716.pdf | SC-82A, SOT-343 | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1211 | 4 | 150°C | 40 | 2 | FET General Purpose Power | 29dB | Not Qualified | R-PDSO-G4 | 0.9dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 15mA | 0.03A | 0.03 pF | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||
| BF1205C,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nxpusainc-bf1205c115-datasheets-6723.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | BF1205 | 6 | 150°C | 40 | 2 | FET General Purpose Power | 30dB | Not Qualified | R-PDSO-G6 | 2013-06-14 00:00:00 | 1.3dB | SILICON | COMPLEX | SWITCHING | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 19mA | 0.03A | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||
| BLF544,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 960MHz | 1997 | /files/ampleonusainc-blf544112-datasheets-6851.pdf | SOT-171A | 7dB | 20W | 3.5A | 40mA | N-Channel | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1201,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1201r215-datasheets-6101.pdf | TO-253-4, TO-253AA | unknown | BF1201 | 4 | 29dB | 2013-06-14 00:00:00 | 1dB | 30mA | 15mA | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1006HSR5 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 120V | 450MHz | ROHS3 Compliant | 2013 | NI-1230S-4 | 10 Weeks | EAR99 | 8541.29.00.75 | 260 | 40 | 20dB | 1000W | 150mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF1046,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 960MHz | 2011 | /files/ampleonusainc-blf1046135-datasheets-6578.pdf | SOT467C | 14dB | 45W | 4.5A | 300mA | LDMOS | 26V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1214,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nxpusainc-bf1214115-datasheets-6860.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | 6 | 150°C | 40 | 2 | FET General Purpose Power | 31dB | Not Qualified | R-PDSO-G6 | 0.9dB | SILICON | COMMON SOURCE, 2 ELEMENTS | SWITCHING | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 18mA | 0.03A | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||
| BLF6G27-135,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2008 | SOT-502A | BLF6G27 | LDMOST | 20W | 34A | 1.2A | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF368,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 225MHz | 2003 | /files/ampleonusainc-blf368112-datasheets-6864.pdf | SOT-262A1 | 13.5dB | 300W | 25A | 250mA | 2 N-Channel (Dual) Common Source | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1207,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/nxpusainc-bf1207115-datasheets-6746.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 6 | 150°C | 40 | 2 | FET General Purpose Power | 30dB | Not Qualified | R-PDSO-G6 | 1.3dB | SILICON | SINGLE | ISOLATED | AMPLIFIER | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 18mA | 0.03A | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||
| BF909,235 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | ROHS3 Compliant | 1998 | /files/nxpusainc-bf909r215-datasheets-6115.pdf | TO-253-4, TO-253AA | unknown | BF909 | 4 | 2013-06-14 00:00:00 | 2dB | 40mA | 15mA | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1105WR,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf1105215-datasheets-6251.pdf | SC-82A, SOT-343 | 4 | EAR99 | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF1105 | 4 | 150°C | 40 | 1 | FET General Purpose Power | 20dB | Not Qualified | R-PDSO-G4 | 1.7dB | SILICON | SINGLE | SOURCE | AMPLIFIER | 7V | METAL-OXIDE SEMICONDUCTOR | 30mA | 0.03A | 0.04 pF | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||
| BF909,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/nxpusainc-bf909r215-datasheets-6115.pdf | TO-253-4, TO-253AA | 4 | EAR99 | LOW NOISE | unknown | 8541.21.00.75 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | BF909 | 4 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 2dB | SILICON | COMPLEX | SOURCE | AMPLIFIER | 7V | METAL-OXIDE SEMICONDUCTOR | 40mA | 15mA | 0.04A | 0.05 pF | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||
| BF992,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | 200MHz | DUAL GATE, DEPLETION MODE | ROHS3 Compliant | 1999 | /files/nxpusainc-bf992215-datasheets-6775.pdf | TO-253-4, TO-253AA | 4 | 13 Weeks | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF992 | 4 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 1.2dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.2W | 20V | METAL-OXIDE SEMICONDUCTOR | 40mA | 15mA | 0.04A | 0.04 pF | N-Channel Dual Gate | 10V | ||||||||||||||||||||||||||||||||
| BF1202,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1202r215-datasheets-6076.pdf | TO-253-4, TO-253AA | unknown | BF1202 | 4 | 30.5dB | 2013-06-14 00:00:00 | 0.9dB | 30mA | 12mA | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1215,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | ROHS3 Compliant | 2008 | /files/nxpusainc-bf1215115-datasheets-6182.pdf | 6-TSSOP, SC-88, SOT-363 | unknown | BF1215 | 6 | 30dB | 2013-10-15 00:00:00 | 1.5dB | 30mA | 19mA | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF6G20-75,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.93GHz~1.99GHz | Non-RoHS Compliant | 2009 | /files/ampleonusainc-blf6g2075112-datasheets-6812.pdf | SOT-502A | BLF6G20 | 19dB | LDMOST | 29.5W | 18A | 550mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998,235 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 12V | 200MHz | ROHS3 Compliant | 1996 | /files/nxpusainc-bf998r215-datasheets-6475.pdf | TO-253-4, TO-253AA | BF998 | 4 | 2013-06-14 00:00:00 | 0.6dB | 30mA | 10mA | N-Channel Dual Gate | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF904R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 200MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/nxpusainc-bf904235-datasheets-6346.pdf | SOT-143R | 4 | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF904 | 4 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 1dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 7V | METAL-OXIDE SEMICONDUCTOR | 30mA | 10mA | 0.03A | 0.035 pF | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||||
| BF991,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | 100MHz | DUAL GATE, DEPLETION MODE | ROHS3 Compliant | 1996 | /files/nxpusainc-bf991215-datasheets-6823.pdf | TO-253-4, TO-253AA | 4 | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | BF991 | 4 | 150°C | 40 | 1 | FET General Purpose Power | 29dB | Not Qualified | R-PDSO-G4 | 0.7dB | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | AMPLIFIER | 0.2W | 20V | METAL-OXIDE SEMICONDUCTOR | 20mA | 10mA | 0.02A | N-Channel Dual Gate | 10V | |||||||||||||||||||||||||||||||||
| BLF245B,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 175MHz | Non-RoHS Compliant | 2003 | /files/ampleonusainc-blf245b112-datasheets-6594.pdf | SOT-279A | 18dB | CDFM4 | 30W | 4.5A | 25mA | 2 N-Channel (Dual) Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF175,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 125V | 108MHz | Non-RoHS Compliant | 1997 | /files/ampleonusainc-blf175112-datasheets-6712.pdf | SOT-123A | 20dB | CRFM4 | 30W | 4A | 30mA | N-Channel | 50V |
