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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IRGP4262D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgp4262depbf-datasheets-9749.pdf | TO-247-3 | Lead Free | 15 Weeks | No SVHC | 3 | EAR99 | No | 250W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 250W | 170 ns | 650V | 1.7V | 2.1V | 60A | 45ns | 400V, 24A, 10 Ω, 15V | 20V | 7.7V | 2.1V @ 15V, 24A | 70nC | 96A | 24ns/73ns | 520μJ (on), 240μJ (off) | 40ns | |||||||||||||||||||||||||||||||||||||||||||||
| IRGB4610DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgb4610dpbf-datasheets-9754.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 2.299997g | No SVHC | 3 | EAR99 | 77W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 77W | 74 ns | 600V | 1.7V | 2V | 16A | 400V, 6A, 47 Ω, 15V | 20V | 6.5V | 2V @ 15V, 6A | 13nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IRGB4607DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgb4607dpbf-datasheets-9759.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 6 Weeks | 2.299997g | No SVHC | 3 | EAR99 | 58W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 58W | TO-220AB | 48 ns | 600V | 1.75V | 51 ns | 2.05V | 11A | 95 ns | 400V, 4A, 100 Ω, 15V | 2.05V @ 15V, 4A | 9nC | 12A | 27ns/120ns | 140μJ (on), 62μJ (off) | ||||||||||||||||||||||||||||||||||||||
| NGTB40N60FLWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/onsemiconductor-ngtb40n60flwg-datasheets-9763.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 5 Weeks | 6.500007g | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | 257W | 3 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 257W | 77 ns | 600V | 1.85V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 40A | Trench Field Stop | 171nC | 160A | 85ns/174ns | 890μJ (on), 440μJ (off) | |||||||||||||||||||||||||||||||||||||
| IRGP4620D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2008 | /files/infineontechnologies-irgp4620depbf-datasheets-9766.pdf | TO-247-3 | No SVHC | 3 | EAR99 | 140W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 140W | 68 ns | 600V | 1.55V | 1.85V | 32A | 400V, 12A, 22 Ω, 15V | 20V | 6.5V | 1.85V @ 15V, 12A | 25nC | 36A | 31ns/83ns | 75μJ (on), 225μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4630DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgp4630dpbf-datasheets-9772.pdf | TO-247-3 | No SVHC | 3 | EAR99 | 206W | NOT SPECIFIED | Single | NOT SPECIFIED | 100 ns | 600V | 1.65V | 1.95V | 30A | 47A | 400V, 18A, 22 Ω, 15V | 1.95V @ 15V, 18A | 35nC | 54A | 40ns/105ns | 95μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGR4610DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgb4610dpbf-datasheets-9754.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.67mm | 4.83mm | 9.65mm | 350.003213mg | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 77W | 260 | Single | 30 | Insulated Gate BIP Transistors | N-CHANNEL | 77W | 74 ns | 600V | 1.7V | 2V | 16A | 400V, 6A, 47 Ω, 15V | 20V | 6.5V | 2V @ 15V, 6A | 13nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IRGP4266D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | TO-247-3 | Lead Free | 15 Weeks | 6.500007g | No SVHC | 3 | EAR99 | No | 455W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 455W | 170 ns | 650V | 1.7V | 2.1V | 140A | 90ns | 400V, 75A, 10 Ω, 15V | 20V | 7.7V | 2.1V @ 15V, 75A | 210nC | 300A | 50ns/200ns | 2.5mJ (on), 2.2mJ (off) | 80ns | |||||||||||||||||||||||||||||||||||||||||||||
| NGTG50N60FWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/onsemiconductor-ngtg50n60fwg-datasheets-9783.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 4 Weeks | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 22 hours ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 223W | 3 | Single | 223W | 600V | 1.45V | 600V | 100A | 400V, 50A, 10 Ω, 15V | 1.7V @ 15V, 50A | Trench | 310nC | 200A | 117ns/285ns | 1.1mJ (on), 1.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| APT40GR120B2SCD10 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt40gr120b2scd10-datasheets-9647.pdf | TO-247-3 | Lead Free | 22 Weeks | EAR99 | 500W | Single | 20 ns | 166 ns | 500W | 1.2kV | 3.2V | 88A | 1200V | 600V, 40A, 4.3 Ω, 15V | 3.2V @ 15V, 40A | NPT | 210nC | 160A | 20ns/166ns | 929μJ (on), 1070μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GS60BRDLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gs60brdlg-datasheets-9648.pdf | TO-247-3 | 3 | OBSOLETE (Last Updated: 3 weeks ago) | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-247AD | 600V | 45 ns | 600V | 54A | 412 ns | 400V, 30A, 9.1 Ω, 15V | 3.15V @ 15V, 30A | NPT | 145nC | 113A | 16ns/360ns | 570μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| APT30GP60B2DLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt30gp60b2dlg-datasheets-9649.pdf | TO-247-3 | 3 | 22 Weeks | 3 | OBSOLETE (Last Updated: 3 weeks ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 463W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 463W | TO-247AD | 600V | 31 ns | 600V | 100A | 164 ns | 400V, 30A, 5 Ω, 15V | 20V | 6V | 2.7V @ 15V, 30A | PT | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||
| APT15GP60BDLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gp60bdlg-datasheets-9650.pdf | TO-247-3 | 3 | OBSOLETE (Last Updated: 3 weeks ago) | yes | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 250W | TO-247AD | 600V | 20 ns | 600V | 56A | 157 ns | 400V, 15A, 5 Ω, 15V | 20V | 6V | 2.7V @ 15V, 15A | PT | 55nC | 65A | 8ns/29ns | 130μJ (on), 121μJ (off) | ||||||||||||||||||||||||||||||||||||||
| STGF20H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf20h60df-datasheets-9651.pdf | TO-220-3 Full Pack | 10.4mm | 15.75mm | 4.6mm | 20 Weeks | 3 | EAR99 | No | 37W | STGF20 | Single | 37W | 90 ns | 600V | 2V | 600V | 40A | 400V, 20A, 10 Ω, 15V | 2V @ 15V, 20A | Trench Field Stop | 115nC | 80A | 42.5ns/177ns | 209μJ (on), 261μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GP60LDLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gp60ldlg-datasheets-9654.pdf | TO-264-3, TO-264AA | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 625W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 625W | 600V | 55 ns | 600V | 150A | 200 ns | 400V, 50A, 4.3 Ω, 15V | 2.7V @ 15V, 50A | PT | 165nC | 190A | 19ns/85ns | 456μJ (on), 635μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IRG4RC10UTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4rc10upbf-datasheets-5054.pdf | 600V | 8.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 1.2446mm | 6.223mm | Contains Lead | 2 | 13 Weeks | 350.003213mg | 3 | ULTRA FAST | No | 38W | GULL WING | IRG4RC10UPBF | Single | 38W | 1 | R-PSSO-G2 | 11ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | TO-252AA | 600V | 2.6V | 32 ns | 2.6V | 8.5A | 330 ns | 480V, 5A, 100 Ω, 15V | 2.6V @ 15V, 5A | 15nC | 34A | 19ns/116ns | 80μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||
| NGTB30N60FWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/onsemiconductor-ngtb30n60fwg-datasheets-9664.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 20 hours ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | 167W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 167W | Insulated Gate BIP Transistors | N-CHANNEL | 72ns | 600V | 1.45V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 20V | 6.5V | 1.7V @ 15V, 30A | Trench | 170nC | 120A | 81ns/190ns | 650μJ (on), 650μJ (off) | |||||||||||||||||||||||||||||||||||||
| IGW30N100TFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2008 | /files/infineontechnologies-igw30n100tfksa1-datasheets-9674.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | 412W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | POWER CONTROL | N-CHANNEL | 412W | TO-247AD | 1kV | 54 ns | 1.9V | 60A | 1000V | 569 ns | 600V, 30A, 16 Ω, 15V | 1.9V @ 15V, 30A | Trench Field Stop | 217nC | 90A | 33ns/535ns | 3.8mJ | |||||||||||||||||||||||||||||||||||||
| APT30GP60LDLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gp60b2dlg-datasheets-9649.pdf | TO-264-3, TO-264AA | 3 | 3 | OBSOLETE (Last Updated: 3 weeks ago) | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 463W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 463W | 600V | 31 ns | 2.7V | 100A | 164 ns | 400V, 30A, 5 Ω, 15V | 20V | 6V | 2.7V @ 15V, 30A | PT | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||
| RJP4010AGE-00#P5 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjp4010age00p5-datasheets-9685.pdf | 8-TSSOJ (0.094, 2.40mm Width) | Lead Free | 16 Weeks | 8 | yes | 1.6W | NOT SPECIFIED | NOT SPECIFIED | 400V | 9V | 9V @ 3V, 150A | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB50N60FWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | /files/onsemiconductor-ngtb50n60fwg-datasheets-9689.pdf | TO-247 | 16.25mm | 21.4mm | 5.3mm | Lead Free | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 21 hours ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | 223W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 223W | Insulated Gate BIP Transistors | 117 ns | 285 ns | N-CHANNEL | 77 ns | 600V | 1.45V | 600V | 100A | 20V | 6.5V | |||||||||||||||||||||||||||||||||||||||||||
| IHW30N135R3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2006 | /files/infineontechnologies-ihw30n135r3fksa1-datasheets-9691.pdf | TO-247-3 | Lead Free | 14 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | 349W | NOT SPECIFIED | Single | NOT SPECIFIED | 175W | Insulated Gate BIP Transistors | N-CHANNEL | 349W | 1.35kV | 1.85V | 1.35kV | 60A | 1350V | 600V, 30A, 10 Ω, 15V | 20V | 6.4V | 1.85V @ 15V, 30A | Trench | 263nC | 90A | -/337ns | 1.93mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IRG7PH44K10D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph44k10depbf-datasheets-9639.pdf | TO-247-3 | 3 | EAR99 | No | 320W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 320W | 130 ns | 1.2kV | 2.4V | 70A | 70ns | 1200V | 600V, 25A, 10 Ω, 15V | 7.5V | 2.4V @ 15V, 25A | 200nC | 100A | 75ns/315ns | 2.1mJ (on), 1.3mJ (off) | 115ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| STGWA40N120KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~125°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | 240W | SINGLE | NOT SPECIFIED | STGWA40 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | SINGLE WITH BUILT-IN DIODE | MOTOR CONTROL | N-CHANNEL | 240W | 1.2kV | 84 ns | 1.2kV | 83 ns | 3.85V | 80A | 1200V | 564 ns | 960V, 30A, 10 Ω, 15V | 25V | 6.5V | 3.85V @ 15V, 30A | 126nC | 120A | 48ns/338ns | 3.7mJ (on), 5.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| APT25GR120BSCD10 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt25gr120bscd10-datasheets-9644.pdf | TO-247-3 | Lead Free | 22 Weeks | 521W | Insulated Gate BIP Transistors | N-CHANNEL | 521W | 1.2kV | 3.2V | 75A | 1200V | 600V, 25A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 25A | NPT | 203nC | 100A | 16ns/122ns | 434μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGR2B60KDTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgr2b60kdtrpbf-datasheets-9530.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | 3 | EAR99 | No | 35W | IRGR2B60 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 35W | 68 ns | 600V | 2.25V | 6.3A | 25ns | 400V, 2A, 100 Ω, 15V | 20V | 6V | 2.25V @ 15V, 2A | NPT | 12nC | 8A | 11ns/150ns | 74μJ (on), 39μJ (off) | 75ns | ||||||||||||||||||||||||||||||||||||||||||||||
| APT50GS60BRDLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gs60brdlg-datasheets-9646.pdf | TO-247-3 | 22 Weeks | No | 415W | Single | TO-247 | 415W | 600V | 600V | 93A | 600V | 93A | 400V, 50A, 4.7Ohm, 15V | 3.15V @ 15V, 50A | NPT | 235nC | 195A | 16ns/225ns | 755μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA25S125P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | Standard | RoHS Compliant | 2013 | /files/onsemiconductor-fga25s125p-datasheets-9555.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 6.401g | 3 | yes | 250W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | POWER CONTROL | N-CHANNEL | 1.25kV | 2.16V | 1.25kV | 50A | 1250V | 2.35V @ 15V, 25A | Trench Field Stop | 204nC | 75A | |||||||||||||||||||||||||||||||||||||||||||||||
| RJH60D6DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d6dpm00t1-datasheets-9560.pdf | TO-3PFM, SC-93-3 | Lead Free | 16 Weeks | 3 | yes | No | 50W | RJH60D | 3 | Single | 50 ns | 160 ns | 50W | 100 ns | 600V | 2.2V | 80A | 300V, 40A, 5 Ω, 15V | 2.2V @ 15V, 40A | Trench | 104nC | 50ns/160ns | 850μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4078DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgp4078depbf-datasheets-9439.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 12 Weeks | 3 | EAR99 | No | 278W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 278W | 600V | 1.9V | 2.2V | 74A | 400V, 50A, 10 Ω, 15V | 20V | 6.5V | 2.2V @ 15V, 50A | Trench | 92nC | 150A | -/116ns | 1.1mJ (off) |
