Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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IRG7PH37K10D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph37k10dpbf-datasheets-9452.pdf | TO-247-3 | 3 | EAR99 | No | 216W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 216W | 120 ns | 1.2kV | 2.4V | 45A | 45ns | 1200V | 600V, 15A, 10 Ω, 15V | 7.5V | 2.4V @ 15V, 15A | 135nC | 60A | 50ns/240ns | 1mJ (on), 600μJ (off) | 100ns | |||||||||||||||||||||||||||||||||||||||||||
IXGH10N300 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2009 | /files/ixys-ixgh10n300-datasheets-9508.pdf | TO-247-3 | 3 | 25 Weeks | 6.500007g | yes | 100W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-247AD | 3kV | 299 ns | 5.2V | 18A | 3000V | 684 ns | 20V | 5V | 5.2V @ 15V, 30A | 32nC | 40A | ||||||||||||||||||||||||||||||||||
IRG7PH42UD1MPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineon-irg7ph42ud1mpbf-datasheets-6006.pdf | TO-247-3 | Lead Free | 6.500007g | 3 | EAR99 | No | 313W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 313W | 1.2kV | 1.7V | 2V | 85A | 1200V | 600V, 30A, 10 Ω, 15V | 6V | 2V @ 15V, 30A | Trench | 270nC | 200A | -/270ns | 1.21mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
RJH1CV5DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjh1cv5dpk00t0-datasheets-9348.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | 3 | yes | EAR99 | 245W | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 245W | 170 ns | 1.2kV | 2.6V | 50A | 1200V | 600V, 25A, 5 Ω, 15V | 2.6V @ 15V, 25A | Trench | 72nC | 42ns/105ns | 1.9mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||
IXXK160N65C4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxk160n65c4-datasheets-9436.pdf | TO-264-3, TO-264AA | Lead Free | 940W | 160N65 | Single | 940W | Insulated Gate BIP Transistors | 52 ns | 197 ns | N-CHANNEL | 650V | 1.7V | 2.1V | 290A | 400V, 80A, 1 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 160A | PT | 422nC | 800A | 52ns/197ns | 3.5mJ (on), 1.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
IRGP4263PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgp4263epbf-datasheets-9322.pdf | TO-247-3 | 16.13mm | 21.1mm | 5.2mm | Lead Free | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 300W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 300W | 650V | 1.7V | 2.1V | 90A | 80ns | 400V, 48A, 10 Ω, 15V | 20V | 7.7V | 2.1V @ 15V, 48A | 150nC | 192A | 70ns/140ns | 1.7mJ (on), 1mJ (off) | 50ns | ||||||||||||||||||||||||||||||||||||
IRGP4078D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgp4078depbf-datasheets-9439.pdf | TO-247-3 | 15 Weeks | 3 | EAR99 | No | 278W | Single | 278W | Insulated Gate BIP Transistors | N-CHANNEL | 600V | 2.2V | 2.2V | 74A | 400V, 50A, 10 Ω, 15V | 20V | 6.5V | 2.2V @ 15V, 50A | Trench | 92nC | 150A | -/116ns | 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
RJH60F3DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh60f3dpk00t0-datasheets-9355.pdf | TO-3P-3, SC-65-3 | 16 Weeks | yes | 178.5W | NOT SPECIFIED | RJH60F | 4 | NOT SPECIFIED | 178.5W | 140 ns | 600V | 1.82V | 40A | 1.82V @ 15V, 20A | Trench | |||||||||||||||||||||||||||||||||||||||||||||||||||
RJH60M2DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60m2dpe00j3-datasheets-9357.pdf | SC-83 | 16 Weeks | 83 | 63W | NOT SPECIFIED | RJH60M | 4 | NOT SPECIFIED | 63W | 600V | 85 ns | 600V | 2.5V | 25A | 300V, 12A, 5 Ω, 15V | 2.5V @ 15V, 12A | Trench | 33nC | 32ns/70ns | 180μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
RJH60D2DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d2dpe00j3-datasheets-9360.pdf | SC-83 | Lead Free | 16 Weeks | 83 | 63W | NOT SPECIFIED | RJH60D | 4 | NOT SPECIFIED | 32 ns | 85 ns | 63W | 600V | 100 ns | 600V | 2.2V | 25A | 300V, 12A, 5 Ω, 15V | 2.2V @ 15V, 12A | Trench | 19nC | 32ns/85ns | 100μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
IRGP4063D1-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgp4063d1epbf-datasheets-9364.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.13mm | Lead Free | 3 | EAR99 | No | 330W | IRGP4063D | Single | Insulated Gate BIP Transistors | N-CHANNEL | 330W | 80 ns | 600V | 2.14V | 100A | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 2.14V @ 15V, 48A | 150nC | 192A | 60ns/160ns | 1.4mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||
RJP60F0DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjp60f0dpm00t1-datasheets-9380.pdf | TO-3PFM, SC-93-3 | 16 Weeks | 3 | yes | EAR99 | 40W | NOT SPECIFIED | RJP60F | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 40W | 600V | 1.82V | 50A | 400V, 30A, 5 Ω, 15V | 1.82V @ 15V, 25A | Trench | 46ns/70ns | |||||||||||||||||||||||||||||||||||||||||||||
RJP60F5DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjp60f5dpm00t1-datasheets-9383.pdf | TO-3PFM, SC-93-3 | 16 Weeks | 3 | yes | EAR99 | 45W | NOT SPECIFIED | RJP60F | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 45W | 600V | 1.8V | 80A | 400V, 30A, 5 Ω, 15V | 1.8V @ 15V, 40A | Trench | 74nC | 53ns/90ns | ||||||||||||||||||||||||||||||||||||||||||||
IRGP4063D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgp4063d1epbf-datasheets-9364.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 38.000013g | 3 | EAR99 | No | 330W | IRGP4063D | Single | Insulated Gate BIP Transistors | N-CHANNEL | 330W | 80 ns | 600V | 2.05V | 2.14V | 100A | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 2.14V @ 15V, 48A | 150nC | 192A | 60ns/160ns | 1.4mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||
RJH60F7BDPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60f7bdpqa0t0-datasheets-9395.pdf | TO-247-3 | 3 | 16 Weeks | 3 | yes | EAR99 | No | 328.9W | SINGLE | RJH60F | 3 | 1 | Insulated Gate BIP Transistors | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 328.9W | 25 ns | 600V | 144 ns | 1.75V | 90A | 216 ns | 400V, 30A, 5 Ω, 15V | 8V | 1.75V @ 15V, 50A | Trench | 63ns/142ns | ||||||||||||||||||||||||||||||||||||
IRGS4064DTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgs4064dtrlpbf-datasheets-9409.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | 3 | EAR99 | No | 101W | Single | 101W | 62 ns | 600V | 1.91V | 20A | 400V, 10A, 22 Ω, 15V | 1.91V @ 15V, 10A | Trench | 32nC | 40A | 27ns/79ns | 29μJ (on), 200μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
IRGS4045DTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgs4045dpbf-datasheets-9234.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | 3 | EAR99 | No | 77W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 77W | 74 ns | 600V | 2V | 12A | 22ns | 400V, 6A, 47 Ω, 15V | 20V | 6.5V | 2V @ 15V, 6A | 19.5nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | 22ns | ||||||||||||||||||||||||||||||||||||||||||
RJH60F0DPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-rjh60f0dpqa0t0-datasheets-9423.pdf | TO-247-3 | 16 Weeks | No SVHC | 3 | yes | 201.6W | NOT SPECIFIED | RJH60F | 3 | NOT SPECIFIED | 201.6W | 90 ns | 600V | 1.7V | 1.82V | 50A | 400V, 30A, 5 Ω, 15V | 1.82V @ 15V, 25A | Trench | 46ns/70ns | ||||||||||||||||||||||||||||||||||||||||||||||
NGTB25N120LWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/onsemiconductor-ngtb25n120lwg-datasheets-9425.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 3 | 6.500007g | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 192W | 3 | Single | 1 | Insulated Gate BIP Transistors | 89 ns | 235 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 192W | 1.2kV | 2.3V | 117 ns | 1.2kV | 50A | 1200V | 475 ns | 600V, 25A, 10 Ω, 15V | 20V | 6.5V | 2.3V @ 15V, 25A | Trench Field Stop | 200nC | 200A | 89ns/235ns | 3.4mJ (on), 800μJ (off) | |||||||||||||||||||||||
RJP60F0DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjp60f0dpe00j3-datasheets-9429.pdf | SC-83 | 16 Weeks | 122W | NOT SPECIFIED | RJP60F | 4 | NOT SPECIFIED | 122W | 600V | 1.82V | 50A | 400V, 30A, 5 Ω, 15V | 1.82V @ 15V, 25A | Trench | 46ns/70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
RJH60F4DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh60f4dpk00t0-datasheets-9345.pdf | TO-3P-3, SC-65-3 | 16 Weeks | yes | 235.8W | NOT SPECIFIED | RJH60F | 4 | NOT SPECIFIED | 235.8W | 140 ns | 600V | 1.82V | 60A | 400V, 30A, 5 Ω, 15V | 1.82V @ 15V, 30A | Trench | 45ns/85ns | |||||||||||||||||||||||||||||||||||||||||||||||||
RJH60F6DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh60f6dpk00t0-datasheets-9433.pdf | TO-3P-3, SC-65-3 | 16 Weeks | yes | 297.6W | NOT SPECIFIED | RJH60F | 4 | NOT SPECIFIED | 297.6W | 140 ns | 600V | 1.75V | 85A | 400V, 30A, 5 Ω, 15V | 1.75V @ 15V, 45A | Trench | 58ns/131ns | |||||||||||||||||||||||||||||||||||||||||||||||||
AUIRGSL4062D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-auirgs4062d1trl-datasheets-9261.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 13 Weeks | 3 | 246W | Single | TO-262 | 246W | 102 ns | 600V | 1.77V | 59A | 600V | 59A | 400V, 24A, 10Ohm, 15V | 1.77V @ 15V, 24A | Trench | 77nC | 72A | 19ns/90ns | 532μJ (on), 311μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
IXGH30N60B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/ixys-ixgh30n60b4-datasheets-9273.pdf | TO-247-3 | 3 | yes | LOW CONDUCTION LOSS | 190W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-247AD | 600V | 53 ns | 1.7V | 66A | 451 ns | 400V, 24A, 10 Ω, 15V | 20V | 5V | 1.7V @ 15V, 24A | PT | 77nC | 156A | 21ns/200ns | 440μJ (on), 700μJ (off) | ||||||||||||||||||||||||||||||||
IXGQ50N60C4D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/ixys-ixgq50n60c4d1-datasheets-9275.pdf | TO-3P-3, SC-65-3 | 3 | unknown | 300W | SINGLE | 2 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 25 ns | 600V | 75 ns | 2.3V | 90A | 306 ns | 400V, 36A, 10 Ω, 15V | 20V | 6.5V | 2.3V @ 15V, 36A | PT | 113nC | 220A | 40ns/270ns | 950μJ (on), 840μJ (off) | |||||||||||||||||||||||||||||||||||
IXGP24N60C4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/ixys-ixgh24n60c4-datasheets-9230.pdf | TO-220-3 | 3 | yes | 190W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-220AB | 600V | 52 ns | 2.7V | 56A | 248 ns | 360V, 24A, 10 Ω, 15V | 20V | 5V | 2.7V @ 15V, 24A | PT | 64nC | 130A | 21ns/143ns | 400μJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||||
IRGP4066PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/infineontechnologies-irgp4066epbf-datasheets-9030.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | 454W | Single | 454W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 1.7V | 120 ns | 2.1V | 140A | 90ns | 310 ns | 400V, 75A, 10 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 75A | Trench | 150nC | 225A | 50ns/200ns | 2.47mJ (on), 2.16mJ (off) | 80ns | ||||||||||||||||||||||||||||
AUIRGB4062D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirgs4062d1trl-datasheets-9261.pdf | TO-220-3 | 13 Weeks | 3 | EAR99 | 246W | NOT SPECIFIED | Single | NOT SPECIFIED | 246W | Insulated Gate BIP Transistors | N-CHANNEL | 102 ns | 600V | 1.57V | 1.77V | 59A | 41ns | 400V, 24A, 10 Ω, 15V | 20V | 6.5V | 1.77V @ 15V, 24A | Trench | 77nC | 72A | 19ns/90ns | 532μJ (on), 311μJ (off) | 40ns | |||||||||||||||||||||||||||||||||||||||
IRGS4045DTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgs4045dpbf-datasheets-9234.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | 3 | EAR99 | No | 77W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 77W | 74 ns | 600V | 2V | 12A | 22ns | 400V, 6A, 47 Ω, 15V | 20V | 6.5V | 2V @ 15V, 6A | 19.5nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | 22ns | ||||||||||||||||||||||||||||||||||||||||||
AUIRGS4062D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirgs4062d1trl-datasheets-9261.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | 3 | EAR99 | 246W | NOT SPECIFIED | IRGS4062DPBF | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 246W | 102 ns | 600V | 1.77V | 59A | 41ns | 400V, 24A, 10 Ω, 15V | 20V | 6.5V | 1.77V @ 15V, 24A | Trench | 77nC | 72A | 19ns/90ns | 532μJ (on), 311μJ (off) | 40ns |
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