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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| NGTB15N120IHLWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/onsemiconductor-ngtb15n120ihlwg-datasheets-9175.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 3 | 24 Weeks | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | NO | 156W | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 156W | 1.2kV | 1.8V | 1.2kV | 30A | 1200V | 440 ns | 600V, 15A, 15 Ω, 15V | 20V | 6.5V | 2.2V @ 15V, 15A | 160nC | 120A | -/165ns | 560μJ (off) | |||||||||||||||||||||||||||||||||||||
| AUIRGP50B60PD1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-auirgp50b60pd1e-datasheets-9019.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | LOW CONDUCTION LOSS | No | 390W | Single | 390W | 1 | Insulated Gate BIP Transistors | 40 ns | 150 ns | SILICON | POWER CONTROL | N-CHANNEL | TO-247AC | 42 ns | 600V | 2.35V | 39 ns | 2.85V | 75A | 15ns | 161 ns | 390V, 33A, 3.3 Ω, 15V | 20V | 5V | 2.85V @ 15V, 50A | NPT | 205nC | 150A | 30ns/130ns | 255μJ (on), 375μJ (off) | 15ns | |||||||||||||||||||||||||||||||||||||
| APT102GA60B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt102ga60b2-datasheets-9184.pdf | TO-247-3 Variant | 3 | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 780W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 780W | TO-247AD | 600V | 64 ns | 600V | 183A | 389 ns | 400V, 62A, 4.7 Ω, 15V | 30V | 6V | 2.5V @ 15V, 62A | PT | 294nC | 307A | 28ns/212ns | 1.354mJ (on), 1.614mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| FGD3440G2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EcoSPARK® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | RoHS Compliant | /files/onsemiconductor-fgd3440g2-datasheets-9185.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | yes | 166W | FGD3440 | 166W | 400V | 1.2V | 26.9A | 300V, 6.5A, 1k Ω, 5V | 1.2V @ 4V, 6A | 24nC | -/5.3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX28N140B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | RoHS Compliant | TO-247-3 | 3 | 20 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 350 ns | 1.4kV | 66 ns | 3.6V | 60A | 1400V | 915 ns | 960V, 28A, 5 Ω, 15V | 20V | 5V | 3.6V @ 15V, 28A | 88nC | 150A | 16ns/190ns | 3.6mJ (on), 3.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IXGA50N60C4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/ixys-ixga50n60c4-datasheets-9187.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 300W | SINGLE | GULL WING | 4 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | TO-263AA | 600V | 75 ns | 2.3V | 90A | 306 ns | 400V, 36A, 10 Ω, 15V | 20V | 6.5V | 2.3V @ 15V, 36A | PT | 113nC | 220A | 40ns/270ns | 950μJ (on), 840μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IXGH24N60C4D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/ixys-ixgh24n60c4d1-datasheets-9189.pdf | TO-247-3 | 3 | yes | 190W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-247AD | 25 ns | 600V | 52 ns | 2.7V | 56A | 248 ns | 360V, 24A, 10 Ω, 15V | 20V | 5V | 2.7V @ 15V, 24A | PT | 64nC | 130A | 21ns/143ns | 400μJ (on), 300μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| NGTB25N120IHLWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/onsemiconductor-ngtb25n120ihlwg-datasheets-9191.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 3 | 20 Weeks | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 192W | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 192W | 1.2kV | 1.85V | 1.2kV | 50A | 1200V | 475 ns | 600V, 25A, 10 Ω, 15V | 20V | 6.5V | 2.3V @ 15V, 25A | 200nC | 200A | -/235ns | 800μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IRGPS4067DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2000 | /files/infineontechnologies-irgps4067dpbf-datasheets-9195.pdf | TO-274AA | 16.1mm | 20.8mm | 5.5mm | Lead Free | 3 | 13 Weeks | No SVHC | 3 | EAR99 | No | 750W | Single | 750W | 1 | SILICON | COLLECTOR | GENERAL PURPOSE SWITCHING | N-CHANNEL | 130 ns | 600V | 1.7V | 80 ns | 2.05V | 240A | 230 ns | 400V, 120A, 4.7 Ω, 15V | 2.05V @ 15V, 120A | Trench | 240nC | 360A | 80ns/190ns | 5.75mJ (on), 3.43mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| RJH60D0DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d0dpm00t1-datasheets-9205.pdf | TO-3PFM, SC-93-3 | 16 Weeks | yes | 40W | NOT SPECIFIED | RJH60D | 3 | NOT SPECIFIED | 40W | 100 ns | 600V | 2.2V | 45A | 300V, 22A, 5 Ω, 15V | 2.2V @ 15V, 22A | Trench | 46nC | 40ns/80ns | 230μJ (on), 290μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH28N140B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/ixys-ixgk28n140b3h1-datasheets-4805.pdf | TO-247-3 | 3 | 8 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | TO-247AD | 350 ns | 1.4kV | 66 ns | 3.6V | 60A | 1400V | 915 ns | 960V, 28A, 5 Ω, 15V | 20V | 5V | 3.6V @ 15V, 28A | 88nC | 150A | 16ns/190ns | 3.6mJ (on), 3.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| RJH60D5DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d5dpm00t1-datasheets-9082.pdf | TO-3PFM, SC-93-3 | 16 Weeks | yes | 45W | NOT SPECIFIED | RJH60D | 3 | NOT SPECIFIED | 45W | 100 ns | 600V | 2.2V | 75A | 300V, 37A, 5 Ω, 15V | 2.2V @ 15V, 37A | Trench | 78nC | 50ns/135ns | 650μJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60D1DPP-M0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-rjh60d1dppm0t2-datasheets-9093.pdf | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | No SVHC | 3 | No | 20.8W | RJH60D | 3 | Single | 1 | Insulated Gate BIP Transistors | 30 ns | 42 ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 30W | TO-220AB | 70 ns | 600V | 2.6V | 43 ns | 2.5V | 20A | 117 ns | 300V, 10A, 5 Ω, 15V | 2.5V @ 15V, 10A | Trench | 13nC | 30ns/42ns | 100μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| TIG062E8-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2009 | /files/onsemiconductor-tig062e8tlh-datasheets-9095.pdf | 8-SMD, Flat Lead | 8 | No | 400V | 8V | 8V @ 3V, 100A | 150A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGB8207ANT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | RoHS Compliant | 2011 | /files/onsemiconductor-ngb8207ant4g-datasheets-9098.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 165W | GULL WING | NGB8207A | 3 | Single | 1 | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 165W | 365V | 2450 ns | 365V | 20A | 14700 ns | 2.2V @ 3.7V, 10A | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||
| STGB10NB60ST4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb10nb60st4-datasheets-9069.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 80W | GULL WING | 245 | STGB10 | 3 | Single | 30 | 80W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 460ns | 10A | SILICON | POWER CONTROL | N-CHANNEL | 600V | 600V | 600V | 1.7V | 1160 ns | 600V | 29A | 3100 ns | 480V, 10A, 1k Ω, 15V | 20V | 5V | 1.75V @ 15V, 10A | 33nC | 80A | 700ns/1.2μs | 600μJ (on), 5mJ (off) | |||||||||||||||||||||||||||||||||
| STGP35N35LZ | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/stmicroelectronics-stgb35n35lzt4-datasheets-5666.pdf | TO-220-3 | Lead Free | 3 | 2.299997g | EAR99 | VOLTAGE CLAMPING | No | e3 | Tin (Sn) | 176W | STGP35 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 1.1 μs | 26.5 μs | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 176W | TO-220AB | 345V | 1.7V | 7600 ns | 1.7V | 40A | 37000 ns | 300V, 15A, 5V | 12V | 2.3V | 1.7V @ 4.5V, 15A | 49nC | 80A | 1.1μs/26.5μs | |||||||||||||||||||||||||||||||||||||||||
| RJH60D2DPP-M0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d2dppm0t2-datasheets-9104.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | 3 | No | 27.2W | RJH60D | 3 | Single | Insulated Gate BIP Transistors | 32 ns | 85 ns | N-CHANNEL | 34W | 100 ns | 600V | 2.2V | 2.2V | 25A | 300V, 12A, 5 Ω, 15V | 2.2V @ 15V, 12A | Trench | 19nC | 32ns/85ns | 100μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGS10B60KDTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irgsl10b60kdpbf-datasheets-5264.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 260.39037mg | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 156W | GULL WING | 260 | IRGS10B60KDPBF | Single | 30 | 1 | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 156W | 600V | 90 ns | 600V | 50 ns | 2.2V | 22A | 276 ns | 400V, 10A, 47 Ω, 15V | 2.2V @ 15V, 10A | NPT | 38nC | 44A | 30ns/230ns | 140μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IHY20N135R3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | 2010 | /files/infineontechnologies-ihy20n135r3xksa1-datasheets-9115.pdf | TO-247-3 Variant | 3 | yes | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 310W | 1350V | 40A | 505 ns | 600V, 20A, 15 Ω, 15V | 1.8V @ 15V, 20A | Trench | 195nC | 60A | -/335ns | 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGB4086PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -40°C | Standard | RoHS Compliant | 2009 | /files/infineontechnologies-irgs4086pbf-datasheets-8547.pdf | TO-220-3 | 3 | 160W | Single | 160W | TO-220AB | 160W | 300V | 2.1V | 2.96V | 70A | 300V | 70A | 196V, 25A, 10Ohm | 2.96V @ 15V, 120A | Trench | 65nC | 36ns/112ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60D3DPP-M0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d3dppm0t2-datasheets-9126.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | No | 40W | RJH60D | 3 | Single | 40W | 100 ns | 600V | 600V | 35A | 300V, 17A, 5 Ω, 15V | 2.2V @ 15V, 17A | Trench | 37nC | 35ns/80ns | 200μJ (on), 210μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT44GA60B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt44ga60b-datasheets-9128.pdf | TO-247-3 | 3 | 22 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 337W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 337W | 600V | 29 ns | 600V | 78A | 208 ns | 400V, 26A, 4.7 Ω, 15V | 30V | 6V | 2.5V @ 15V, 26A | PT | 128nC | 130A | 16ns/84ns | 409μJ (on), 258μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| RJH1CF6RDPQ-80#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh1cf6rdpq80t2-datasheets-9129.pdf | TO-247-3 | 16 Weeks | 227.2W | NOT SPECIFIED | NOT SPECIFIED | 227.2W | 1.2kV | 2.3V | 55A | 1200V | 2.3V @ 15V, 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB15N60EG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/onsemiconductor-ngtb15n60eg-datasheets-9134.pdf | TO-220-3 | 10.28mm | 15.75mm | 4.82mm | Lead Free | 4 Weeks | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 117W | 3 | Single | 47W | Insulated Gate BIP Transistors | 78 ns | 130 ns | N-CHANNEL | 117W | 270 ns | 600V | 1.95V | 600V | 30A | 400V, 15A, 22 Ω, 15V | 20V | 6.5V | 1.95V @ 15V, 15A | NPT | 80nC | 120A | 78ns/130ns | 900μJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| RJH60D5DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d5dpk00t0-datasheets-9078.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | yes | 200W | NOT SPECIFIED | RJH60D | 4 | NOT SPECIFIED | 50 ns | 135 ns | 200W | 100 ns | 600V | 2.2V | 75A | 300V, 37A, 5 Ω, 15V | 2.2V @ 15V, 37A | Trench | 78nC | 50ns/135ns | 650μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRGR4045DTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/infineontechnologies-auirgr4045dtrl-datasheets-9138.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | EAR99 | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | IRGR4045 | 30 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 77W | 77W | TO-252AA | 74ns | 38 ns | 15ns | 600V | 12A | 127 ns | 400V, 6A, 47 Ω, 15V | 20V | 6.5V | 2V @ 15V, 6A | Trench | 19.5nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | 22ns | ||||||||||||||||||||||||||||||||||||||
| STGB20NC60VT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20nc60v-datasheets-5090.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 200W | GULL WING | 245 | STGB20 | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | POWER CONTROL | N-CHANNEL | 200W | 600V | 600V | 42.5 ns | 600V | 60A | 280 ns | 390V, 20A, 3.3 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 100nC | 100A | 31ns/100ns | 220μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IRGS15B60KPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/infineon-irgs15b60kpbf-datasheets-5880.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 11 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 208W | GULL WING | 260 | Single | 30 | 208W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 600V | 2.2V | 52 ns | 2.2V | 31A | 22ns | 231 ns | 400V, 15A, 22 Ω, 15V | 20V | 5.5V | 2.2V @ 15V, 15A | NPT | 56nC | 62A | 34ns/184ns | 220μJ (on), 340μJ (off) | |||||||||||||||||||||||||||||||||||||||
| AUIRGP50B60PD1E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-auirgp50b60pd1e-datasheets-9019.pdf | TO-247-3 | 3 | 25 Weeks | EAR99 | LOW CONDUCTION LOSS | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 390W | 390W | TO-247AD | 42ns | 39 ns | 15ns | 600V | 75A | 161 ns | 390V, 33A, 3.3 Ω, 15V | 20V | 5V | 2.85V @ 15V, 50A | NPT | 205nC | 150A | 30ns/130ns | 255μJ (on), 375μJ (off) | 15ns |
