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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IRG7PSH54K10DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7psh54k10dpbf-datasheets-9604.pdf | TO-247-3 | 19 Weeks | 38.000013g | 247 | EAR99 | No | 520W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 170 ns | 1.2kV | 2.4V | 2.4V | 65A | 105ns | 1200V | 120A | 600V, 50A, 5 Ω, 15V | 30V | 7.5V | 2.4V @ 15V, 50A | 435nC | 200A | 110ns/490ns | 4.8mJ (on), 2.8mJ (off) | 90ns | |||||||||||||||||||||||||||||||||||||||||||
| IRGS4064DTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgs4064dtrlpbf-datasheets-9409.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | No | 101W | Single | 101W | 62 ns | 600V | 1.91V | 20A | 400V, 10A, 22 Ω, 15V | 1.91V @ 15V, 10A | Trench | 32nC | 40A | 27ns/79ns | 29μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGR4045DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgr4045dpbf-datasheets-9252.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 19 Weeks | No SVHC | 3 | EAR99 | No | 77W | IRGR4045 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 77W | 74 ns | 600V | 1.7V | 2V | 12A | 15ns | 400V, 6A, 47 Ω, 15V | 20V | 6.5V | 2V @ 15V, 6A | Trench | 19.5nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | 22ns | |||||||||||||||||||||||||||||||||||||||||
| IRG7PH50K10D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph50k10depbf-datasheets-9622.pdf | TO-247-3 | 3 | EAR99 | No | 400W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 400W | 130 ns | 1.2kV | 2.4V | 90A | 80ns | 1200V | 600V, 35A, 5 Ω, 15V | 7.5V | 2.4V @ 15V, 35A | 300nC | 160A | 90ns/340ns | 2.3mJ (on), 1.6mJ (off) | 110ns | |||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4266PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/infineontechnologies-irgp4266epbf-datasheets-9494.pdf | TO-247-3 | 16.13mm | 21.1mm | 5.2mm | Lead Free | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 450W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 450W | 650V | 1.7V | 2.1V | 140A | 105ns | 400V, 75A, 10 Ω, 15V | 20V | 7.7V | 2.1V @ 15V, 75A | 210nC | 300A | 80ns/200ns | 3.2mJ (on), 1.7mJ (off) | 55ns | ||||||||||||||||||||||||||||||||||||||||
| RJH60F5DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh60f5dpk00t0-datasheets-9542.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 4 | yes | 260.4W | NOT SPECIFIED | RJH60F | 4 | Single | NOT SPECIFIED | 260.4W | 140 ns | 600V | 1.8V | 80A | 400V, 30A, 5 Ω, 15V | 1.8V @ 15V, 40A | Trench | 53ns/105ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PC50UD-MP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2000 | TO-247-3 | 20 Weeks | 3 | No | 200W | Single | TO-247AC | 200W | 75 ns | 600V | 2V | 55A | 600V | 55A | 2V @ 15V, 27A | 270nC | 220A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH1BF6RDPQ-80#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh1bf6rdpq80t2-datasheets-9545.pdf | TO-247-3 | 16 Weeks | 227.2W | NOT SPECIFIED | NOT SPECIFIED | 227.2W | 1.1kV | 2.7V | 55A | 1100V | 2.7V @ 15V, 55A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGP20N60HSXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-sgw20n60hsfksa1-datasheets-5920.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | EAR99 | No | Halogen Free | 178W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 178W | TO-220AB | 600V | 30 ns | 600V | 36A | 235 ns | 400V, 20A, 16 Ω, 15V | 3.15V @ 15V, 20A | NPT | 100nC | 80A | 18ns/207ns | 690μJ | |||||||||||||||||||||||||||||||||||||||
| RJH1CF5RDPQ-80#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh1cf5rdpq80t2-datasheets-9548.pdf | TO-247-3 | 16 Weeks | 3 | 192.3W | NOT SPECIFIED | Single | NOT SPECIFIED | 192.3W | 1.2kV | 2.4V | 50A | 1200V | 2.4V @ 15V, 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXX160N65C4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxk160n65c4-datasheets-9436.pdf | TO-247-3 | e3 | Matte Tin (Sn) | 940W | 160N65 | Single | 940W | Insulated Gate BIP Transistors | N-CHANNEL | 650V | 1.7V | 2.1V | 290A | 400V, 80A, 1 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 160A | PT | 422nC | 800A | 52ns/197ns | 3.5mJ (on), 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| RJH60M3DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60m3dpe00j3-datasheets-9499.pdf | SC-83 | 16 Weeks | 83 | No | 113W | RJH60M | 4 | Single | 113W | 600V | 90 ns | 600V | 600V | 35A | 300V, 17A, 5 Ω, 15V | 2.3V @ 15V, 17A | Trench | 60nC | 38ns/90ns | 290μJ (on), 290μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA25S125P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | Standard | RoHS Compliant | 2013 | /files/onsemiconductor-fga25s125p-datasheets-9555.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 6.401g | 3 | yes | 250W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | POWER CONTROL | N-CHANNEL | 1.25kV | 2.16V | 1.25kV | 50A | 1250V | 2.35V @ 15V, 25A | Trench Field Stop | 204nC | 75A | |||||||||||||||||||||||||||||||||||||||||||||
| RJH60D6DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d6dpm00t1-datasheets-9560.pdf | TO-3PFM, SC-93-3 | Lead Free | 16 Weeks | 3 | yes | No | 50W | RJH60D | 3 | Single | 50 ns | 160 ns | 50W | 100 ns | 600V | 2.2V | 80A | 300V, 40A, 5 Ω, 15V | 2.2V @ 15V, 40A | Trench | 104nC | 50ns/160ns | 850μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4078DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgp4078depbf-datasheets-9439.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 12 Weeks | 3 | EAR99 | No | 278W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 278W | 600V | 1.9V | 2.2V | 74A | 400V, 50A, 10 Ω, 15V | 20V | 6.5V | 2.2V @ 15V, 50A | Trench | 92nC | 150A | -/116ns | 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IRGP4266-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2014 | /files/infineontechnologies-irgp4266epbf-datasheets-9494.pdf | TO-247-3 | 14 Weeks | 3 | EAR99 | No | 450W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 450W | 650V | 2.1V | 140A | 105ns | 400V, 75A, 10 Ω, 15V | 20V | 7.7V | 2.1V @ 15V, 75A | 210nC | 300A | 80ns/200ns | 3.2mJ (on), 1.7mJ (off) | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||
| IRG7PH37K10D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph37k10dpbf-datasheets-9452.pdf | TO-247-3 | 3 | EAR99 | No | 216W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 216W | 120 ns | 1.2kV | 2.4V | 45A | 45ns | 1200V | 600V, 15A, 10 Ω, 15V | 7.5V | 2.4V @ 15V, 15A | 135nC | 60A | 50ns/240ns | 1mJ (on), 600μJ (off) | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||
| IXGH10N300 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2009 | /files/ixys-ixgh10n300-datasheets-9508.pdf | TO-247-3 | 3 | 25 Weeks | 6.500007g | yes | 100W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-247AD | 3kV | 299 ns | 5.2V | 18A | 3000V | 684 ns | 20V | 5V | 5.2V @ 15V, 30A | 32nC | 40A | ||||||||||||||||||||||||||||||||||||||
| IRG7PH42UD1MPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineon-irg7ph42ud1mpbf-datasheets-6006.pdf | TO-247-3 | Lead Free | 6.500007g | 3 | EAR99 | No | 313W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 313W | 1.2kV | 1.7V | 2V | 85A | 1200V | 600V, 30A, 10 Ω, 15V | 6V | 2V @ 15V, 30A | Trench | 270nC | 200A | -/270ns | 1.21mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| RJH1CV7DPQ-E0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/renesaselectronicsamerica-rjh1cv7dpqe0t2-datasheets-9514.pdf | TO-247-3 | 3 | 16 Weeks | 3 | EAR99 | No | 320W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 320W | 200 ns | 1.2kV | 98 ns | 1.2kV | 70A | 1200V | 465 ns | 600V, 35A, 5 Ω, 15V | 8V | 2.3V @ 15V, 35A | Trench | 166nC | 53ns/185ns | 3.2mJ (on), 2.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| RJH60V2BDPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60v2bdpe00j3-datasheets-9377.pdf | SC-83 | 16 Weeks | 83 | EAR99 | 63W | NOT SPECIFIED | RJH60V | 4 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 63W | 600V | 25 ns | 600V | 2.2V | 25A | 300V, 12A, 5 Ω, 15V | 30V | 2.2V @ 15V, 12A | Trench | 32nC | 33ns/65ns | 30μJ (on), 180μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IRG7PH28UD1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph28ud1pbf-datasheets-9443.pdf | TO-247-3 | 3 | EAR99 | No | 115W | Single | 115W | Insulated Gate BIP Transistors | N-CHANNEL | 1.2kV | 2.3V | 2.3V | 30A | 1200V | 600V, 15A, 22 Ω, 15V | 6V | 2.3V @ 15V, 15A | Trench | 90nC | 100A | -/229ns | 543μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRGR2B60KDTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irgr2b60kdtrpbf-datasheets-9530.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | EAR99 | No | 35W | IRGR2B60 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 35W | 68 ns | 600V | 2.25V | 6.3A | 25ns | 400V, 2A, 100 Ω, 15V | 20V | 6V | 2.25V @ 15V, 2A | NPT | 12nC | 8A | 11ns/150ns | 74μJ (on), 39μJ (off) | 75ns | ||||||||||||||||||||||||||||||||||||||||||||
| RJH60F5BDPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60f5bdpqa0t0-datasheets-9449.pdf | TO-247-3 | 3 | 16 Weeks | 3 | yes | EAR99 | 260.4W | NOT SPECIFIED | RJH60F | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 260.4W | 25 ns | 600V | 87 ns | 600V | 80A | 163 ns | 400V, 30A, 5 Ω, 15V | 8V | 1.8V @ 15V, 40A | Trench | 53ns/95ns | ||||||||||||||||||||||||||||||||||||||||
| IRGS14C40LTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | RoHS Compliant | 2000 | /files/infineontechnologies-irgs14c40ltrlp-datasheets-9522.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 11 Weeks | No SVHC | 3 | LOW SATURATION VOLTAGE | No | e3 | MATTE TIN OVER NICKEL | 125W | GULL WING | 260 | IRGS14C40LPBF | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 1.35 μs | 8.3 μs | SILICON | AUTOMOTIVE IGNITION | N-CHANNEL | 125W | 430V | 430V | 1.55V | 3700 ns | 1.75V | 20A | 4000ns | 12V | 2.2V | 1.75V @ 5V, 14A | 27nC | 900ns/6μs | |||||||||||||||||||||||||||||||||
| IRG7PH37K10DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph37k10dpbf-datasheets-9452.pdf | TO-247-3 | 3 | EAR99 | No | 216W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 120 ns | 1.2kV | 2.4V | 2.4V | 25A | 45ns | 1200V | 45A | 600V, 15A, 10 Ω, 15V | 7.5V | 2.4V @ 15V, 15A | 135nC | 60A | 50ns/240ns | 1mJ (on), 600μJ (off) | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||
| IRG7PH35UD1MPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/infineontechnologies-irg7ph35ud1mpbf-datasheets-9458.pdf | TO-247-3 | EAR99 | compliant | NO | IRG7PH35 | Insulated Gate BIP Transistors | N-CHANNEL | 179W | 179W | 1200V | 50A | 600V, 20A, 10 Ω, 15V | 30V | 6V | 2.2V @ 15V, 20A | Trench | 130nC | 150A | -/160ns | 620μJ (off) | 105ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60V1BDPP-M0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60v1bdppm0t2-datasheets-9464.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | EAR99 | 30W | NOT SPECIFIED | RJH60V | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 30W | 25 ns | 600V | 2.2V | 16A | 300V, 8A, 5 Ω, 15V | 2.2V @ 15V, 8A | Trench | 19nC | 30ns/55ns | 17μJ (on), 110μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRGR4045D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/infineontechnologies-auirgr4045dtrl-datasheets-9138.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 13 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 77W | GULL WING | 260 | IRGR4045 | Single | 30 | 77W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-252AA | 74 ns | 600V | 2V | 38 ns | 2V | 12A | 15ns | 127 ns | 400V, 6A, 47 Ω, 15V | 20V | 6.5V | 2V @ 15V, 6A | Trench | 19.5nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | 22ns | ||||||||||||||||||||||||||
| IRGP4063D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2006 | /files/infineontechnologies-irgp4063depbf-datasheets-9473.pdf | TO-247-3 | Lead Free | EAR99 | No | 330W | IRGP4063D | Single | 330W | Insulated Gate BIP Transistors | N-CHANNEL | 115 ns | 600V | 2.05V | 2.14V | 96A | 56ns | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 2.14V @ 15V, 48A | Trench | 140nC | 200A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | 46ns |
