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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| RJH60F4DPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-rjh60f4dpqa0t0-datasheets-9043.pdf | TO-247-3 | 3 | 16 Weeks | 3 | EAR99 | No | 235.8W | RJH60F | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 235.8W | 90 ns | 600V | 1.7V | 195 ns | 600V | 60A | 165 ns | 400V, 30A, 5 Ω, 15V | 8V | 1.82V @ 15V, 30A | Trench | 45ns/85ns | |||||||||||||||||||||||||||||||||||||||||||
| RJH60D6DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d6dpk00t0-datasheets-9046.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | 3 | yes | No | 260W | RJH60D | 4 | Single | 50 ns | 160 ns | 260W | 100 ns | 600V | 600V | 80A | 300V, 40A, 5 Ω, 15V | 2.2V @ 15V, 40A | Trench | 104nC | 50ns/160ns | 850μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| RJH60F5DPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-rjh60f5dpqa0t0-datasheets-9048.pdf | TO-247-3 | Lead Free | 16 Weeks | 3 | yes | 260.4W | NOT SPECIFIED | RJH60F | 3 | NOT SPECIFIED | 260.4W | 90 ns | 600V | 1.7V | 1.8V | 80A | 400V, 30A, 5 Ω, 15V | 1.8V @ 15V, 40A | Trench | 53ns/105ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGR3B60KD2TRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irgr3b60kd2pbf-datasheets-5289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 52W | GULL WING | 260 | IRGR3B60KD2PBF | Single | 30 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | MOTOR CONTROL | N-CHANNEL | 52W | 600V | TO-252AA | 77 ns | 600V | 35 ns | 2.4V | 7.8A | 22ns | 211 ns | 400V, 3A, 100 Ω, 15V | 20V | 5.5V | 2.4V @ 15V, 3A | NPT | 13nC | 15.6A | 18ns/110ns | 62μJ (on), 39μJ (off) | 105ns | |||||||||||||||||||||||||||||||||
| APT100GT60B2RG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt100gt60b2rg-datasheets-9062.pdf | TO-247-3 Variant | 3 | 3 | HIGH RELIABILITY | No | 500W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 500W | 600V | 115 ns | 600V | 148A | 450 ns | 400V, 100A, 4.3 Ω, 15V | 5V | 2.5V @ 15V, 100A | NPT | 460nC | 300A | 40ns/320ns | 3.25mJ (on), 3.125mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| STGW50H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw50h60df-datasheets-9063.pdf | TO-247-3 | Lead Free | 3 | 6.500007g | EAR99 | No | e3 | Tin (Sn) | 360W | STGW50 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 62 ns | 205 ns | SILICON | POWER CONTROL | N-CHANNEL | 360W | 55 ns | 600V | 1.8V | 91 ns | 600V | 100A | 285 ns | 400V, 50A, 10 Ω, 15V | 20V | 1.8V @ 15V, 50A | Trench Field Stop | 217nC | 200A | 62ns/178ns | 890μJ (on), 860μJ (off) | |||||||||||||||||||||||||||||||||||||
| IHY30N160R2XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | 2009 | /files/infineontechnologies-ihy30n160r2xksa1-datasheets-9065.pdf | TO-247-3 Variant | 3 | yes | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 312W | 1600V | 60A | 675 ns | 600V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | NPT | 94nC | 90A | -/525ns | 2.53mJ | |||||||||||||||||||||||||||||||||||||||||||||||
| APT44GA60BD30C | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/microsemicorporation-apt44ga60bd30c-datasheets-9068.pdf | TO-247-3 | 3 | LOW CONDUCTION LOSS | 337W | SINGLE | 3 | 150°C | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 337W | 600V | 29 ns | 1.6V | 78A | 292 ns | 400V, 26A, 4.7 Ω, 15V | 30V | 6V | 1.6V @ 15V, 26A | PT | 128nC | 130A | 16ns/102ns | 409μJ (on), 450μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IHW20N135R3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2008 | /files/infineontechnologies-ihw20n135r3fksa1-datasheets-9073.pdf | TO-247-3 | 3 | 14 Weeks | yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 310W | 310W | 505 ns | 1350V | 40A | 385 ns | 600V, 20A, 15 Ω, 15V | 25V | 6.4V | 1.8V @ 15V, 20A | Trench | 195nC | 60A | -/335ns | 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||
| AUIRGP35B60PD | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-auirgp35b60pd-datasheets-8981.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | HIGHER RELIABILITY | No | 308W | Single | 308W | 1 | Insulated Gate BIP Transistors | 34 ns | 122 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 1.85V | 34 ns | 2.55V | 60A | 11ns | 142 ns | 390V, 22A, 3.3 Ω, 15V | 20V | 5V | 2.55V @ 15V, 35A | NPT | 160nC | 120A | 26ns/110ns | 220μJ (on), 215μJ (off) | 16ns | |||||||||||||||||||||||||||||||
| IRGS8B60KTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-irgs8b60ktrlpbf-datasheets-8821.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.652mm | 2 | 11 Weeks | 260.39037mg | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 167W | GULL WING | 260 | IRGS8B60KPBF | Single | 30 | 167W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 600V | 600V | 43 ns | 2.2V | 28A | 26ns | 220 ns | 400V, 8A, 50 Ω, 15V | 20V | 5.5V | 2.2V @ 15V, 8A | NPT | 29nC | 34A | 23ns/140ns | 160μJ (on), 160μJ (off) | 56ns | |||||||||||||||||||||||||||||
| AUIRGP50B60PD1E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/infineontechnologies-auirgp50b60pd1e-datasheets-9019.pdf | TO-247-3 | 3 | 25 Weeks | EAR99 | LOW CONDUCTION LOSS | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 390W | 390W | TO-247AD | 42ns | 39 ns | 15ns | 600V | 75A | 161 ns | 390V, 33A, 3.3 Ω, 15V | 20V | 5V | 2.85V @ 15V, 50A | NPT | 205nC | 150A | 30ns/130ns | 255μJ (on), 375μJ (off) | 15ns | ||||||||||||||||||||||||||||||||||||
| IRG4PC50SDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg4pc50sdpbf-datasheets-9025.pdf | TO-247-3 | Lead Free | 3 | 52 Weeks | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 200W | 250 | Single | 30 | 200W | 1 | Not Qualified | R-PSFM-T3 | 33 ns | 980 ns | SILICON | COLLECTOR | N-CHANNEL | TO-247AC | 50 ns | 600V | 1.36V | 62 ns | 1.36V | 70A | 1700 ns | 480V, 41A, 5 Ω, 15V | 1.36V @ 15V, 41A | 180nC | 140A | 33ns/650ns | 720μJ (on), 8.27mJ (off) | |||||||||||||||||||||||||||||||||||||||
| RJH60D0DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d0dpk00t0-datasheets-9028.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | 3 | yes | No | 140W | RJH60D | 4 | Single | 140W | 100 ns | 600V | 600V | 45A | 300V, 22A, 5 Ω, 15V | 2.2V @ 15V, 22A | Trench | 46nC | 40ns/80ns | 230μJ (on), 290μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4066-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2006 | /files/infineontechnologies-irgp4066epbf-datasheets-9030.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.13mm | Lead Free | 3 | No SVHC | 3 | EAR99 | No | 454W | Single | 454W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 1.7V | 120 ns | 2.1V | 140A | 90ns | 310 ns | 400V, 75A, 10 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 75A | Trench | 150nC | 225A | 50ns/200ns | 2.47mJ (on), 2.16mJ (off) | 80ns | |||||||||||||||||||||||||||||||||||
| TIG052TS-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2008 | /files/onsemiconductor-tig052tstle-datasheets-8920.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | e6 | Tin/Bismuth (Sn/Bi) | Insulated Gate BIP Transistors | N-CHANNEL | 400V | 5.5V | 5.5V | 6V | 1V | 5.5V @ 2.5V, 150A | 150A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGS15B60KDTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/infineontechnologies-irgs15b60kdpbf-datasheets-5230.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | 260.39037mg | 3 | EAR99 | No | 208W | IRGS15B60KDPBF | Single | 208W | 600V | 92 ns | 600V | 2.2V | 31A | 400V, 15A, 22 Ω, 15V | 2.2V @ 15V, 15A | NPT | 56nC | 62A | 34ns/184ns | 220μJ (on), 340μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRGS30B60KTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-auirgs30b60ktrl-datasheets-8930.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 9 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 370W | 370W | 74 ns | 39ns | 600V | 78A | 237 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.5V | 2.35V @ 15V, 30A | NPT | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | 42ns | ||||||||||||||||||||||||||||||||||||
| TIG066SS-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | /files/onsemiconductor-tig066sstle-datasheets-8936.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | e6 | Tin/Bismuth (Sn/Bi) | Single | Insulated Gate BIP Transistors | N-CHANNEL | 400V | 400V | 6V | 1V | 5V @ 4V, 150A | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH1BF7RDPQ-80#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh1bf7rdpq80t2-datasheets-8942.pdf | TO-247-3 | Lead Free | 16 Weeks | No | 250W | Single | 250W | 1.1kV | 1.1kV | 60A | 1100V | 2.35V @ 15V, 60A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJH1CF7RDPQ-80#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh1cf7rdpq80t2-datasheets-8945.pdf | TO-247-3 | 16 Weeks | No | 250W | Single | 250W | 1.2kV | 1.2kV | 60A | 1200V | 2.4V @ 15V, 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRGSL30B60K | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirgs30b60ktrl-datasheets-8930.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 11.3mm | 4.83mm | Lead Free | 3 | 9 Weeks | No SVHC | 3 | EAR99 | No | 370W | Single | 370W | 1 | Insulated Gate BIP Transistors | SILICON | MOTOR CONTROL | N-CHANNEL | 600V | 2.35V | 74 ns | 2.35V | 78A | 237 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.5V | 2.35V @ 15V, 30A | NPT | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | 42ns | |||||||||||||||||||||||||||||||||||||
| AUIRGS30B60K | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirgs30b60ktrl-datasheets-8930.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 9 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 370W | GULL WING | 260 | Single | 30 | 370W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 600V | 2.35V | 74 ns | 2.35V | 78A | 237 ns | 400V, 30A, 10 Ω, 15V | 20V | 5.5V | 2.35V @ 15V, 30A | NPT | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | 42ns | ||||||||||||||||||||||||||||||
| TIG111BF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | TO-220-3 Full Pack | 3 | 3 | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 2W | 3 | 150°C | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 2W | TO-220AB | 600V | 250 ns | 2V | 23A | 360 ns | 300V, 10A, 30 Ω, 15V | 6V | 2V @ 15V, 10A | NPT | 63nC | 92A | 43ns/175ns | ||||||||||||||||||||||||||||||||||||||||||||
| TIG110BF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | TO-220-3 Full Pack | 3 | 3 | No | 8541.29.00.95 | 2W | 3 | 150°C | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 2W | TO-220AB | 600V | 300 ns | 2V | 27A | 450 ns | 300V, 15A, 30 Ω, 15V | 6V | 2V @ 15V, 15A | NPT | 95nC | 108A | 65ns/250ns | |||||||||||||||||||||||||||||||||||||||||||||
| IRGS4B60KD1TRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irgs4b60kd1trlp-datasheets-8802.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 260.39037mg | 3 | No | e3 | MATTE TIN | 63W | GULL WING | IRGS4B60KD1PBF | Single | 1 | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 63W | 600V | 93 ns | 600V | 40 ns | 2.5V | 11A | 199 ns | 400V, 4A, 100 Ω, 15V | 2.5V @ 15V, 4A | NPT | 12nC | 22A | 22ns/100ns | 73μJ (on), 47μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IRG6S330UPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -40°C | Standard | RoHS Compliant | 2009 | /files/infineon-irg6s330upbf-datasheets-5777.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | No | 160W | Single | 160W | D2PAK | 160W | 330V | 2.1V | 2.1V | 70A | 330V | 70A | 196V, 25A, 10Ohm | 2.1V @ 15V, 70A | Trench | 86nC | 39ns/120ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRG4BC30U-S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirg4bc30us-datasheets-8865.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 9 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | 100W | GULL WING | 260 | Single | 30 | 100W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 1.95V | 33 ns | 600V | 23A | 320 ns | 480V, 12A, 23 Ω, 15V | 20V | 6V | 2.1V @ 15V, 12A | 50nC | 92A | 17ns/78ns | 360μJ | 150ns | |||||||||||||||||||||||||||||||
| AUIRGP35B60PD-E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/infineontechnologies-auirgp35b60pde-datasheets-8873.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | HIGH RELIABILITY | No | 308W | Single | 308W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 42 ns | 600V | 2.15V | 34 ns | 2.55V | 60A | 11ns | 142 ns | 390V, 22A, 3.3 Ω, 15V | 20V | 5V | 2.55V @ 15V, 35A | NPT | 55nC | 120A | 26ns/110ns | 220μJ (on), 215μJ (off) | 16ns | ||||||||||||||||||||||||||||||||
| IXGR50N160H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2009 | /files/ixys-ixgr50n160h1-datasheets-8881.pdf | ISOPLUS247™ | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 240W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 240W | 230 ns | 1.6kV | 192 ns | 2.3V | 75A | 1600V | 4840 ns | 20V | 5V | 2.3V @ 15V, 50A | NPT | 137nC | 330A |
