Products
Manufacturer
RFQ
NEWS
ContactSingle IGBTs(3888)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Switching Frequency | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGW80V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw80v60df-datasheets-5614.pdf | TO-247-3 Exposed Pad | 15.75mm | 20.15mm | 5.15mm | Lead Free | 20 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 469W | STGW80 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 469W | 60 ns | 600V | 1.85V | 600V | 120A | 400V, 80A, 5 Ω, 15V | 20V | 2.3V @ 15V, 80A | Trench Field Stop | 448nC | 240A | 60ns/220ns | 1.8mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| APT25GR120B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt25gr120b-datasheets-5618.pdf | TO-247-3 | Lead Free | 18 Weeks | 521W | Single | Insulated Gate BIP Transistors | 16 ns | 122 ns | N-CHANNEL | 521W | 1.2kV | 3.2V | 75A | 1200V | 600V, 25A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 25A | NPT | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK40B65M3 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 300W | TO-247 | 300W | 365 ns | 650V | 2.45V | 80A | 650V | 80A | 400V, 40A, 7.5Ohm, 15V | 2.45V @ 15V, 40A | 59nC | 120A | 40ns/125ns | 1.3mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP4M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp4m65df2-datasheets-5627.pdf | TO-220-3 | 30 Weeks | ACTIVE (Last Updated: 7 months ago) | STGP4 | 68W | 133ns | 650V | 8A | 400V, 4A, 47 Ω, 15V | 2.1V @ 15V, 4A | Trench Field Stop | 15.2nC | 16A | 12ns/86ns | 40μJ (on), 136μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW15H120F2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw15h120f2-datasheets-5644.pdf | TO-247-3 | 32 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 259W | NOT SPECIFIED | STGW15 | Single | NOT SPECIFIED | 259W | 1.2kV | 2.1V | 1.2kV | 30A | 1200V | 600V, 15A, 10 Ω, 15V | 2.6V @ 15V, 15A | Trench Field Stop | 67nC | 60A | 23ns/111ns | 380μJ (on), 370μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGP40N65F5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igp40n65f5xksa1-datasheets-5647.pdf | TO-220-3 | Lead Free | 16 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | 255W | Insulated Gate BIP Transistors | N-CHANNEL | 650V | 1.6V | 1.6V | 74A | 400V, 20A, 15 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 40A | 95nC | 120A | 19ns/160ns | 360μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| APT80GA60LD40 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt80ga60ld40-datasheets-5652.pdf | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | 3 | 33 Weeks | 10.6g | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 625W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 143A | 22 ns | 600V | 2V | 52 ns | 600V | 143A | 326 ns | 400V, 47A, 4.7 Ω, 15V | 2.5V @ 15V, 47A | PT | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | |||||||||||||||||||||||||||||||||||||
| FGH50T65SQD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh50t65sqdf155-datasheets-5654.pdf | TO-247-3 | 4 Weeks | 6.39g | ACTIVE (Last Updated: 1 week ago) | yes | NOT SPECIFIED | NOT SPECIFIED | 268W | 31ns | 650V | 100A | 400V, 12.5A, 4.7 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 99nC | 200A | 22ns/105ns | 180μJ (on), 45μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK30B65M2 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 300W | TO-247 | 300W | 339 ns | 650V | 2.1V | 60A | 650V | 60A | 400V, 30A, 10Ohm, 15V | 2.1V @ 15V, 30A | 63nC | 90A | 34ns/138ns | 1.02mJ (on), 410μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW75N65EL5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikw75n65el5xksa1-datasheets-5484.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | 536W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 50Hz | 536W | 114 ns | 650V | 53 ns | 650V | 80A | 474 ns | 400V, 75A, 4 Ω, 15V | 1.35V @ 15V, 75A | 436nC | 300A | 40ns/275ns | 1.61mJ (on), 3.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| HGTG30N60B3D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtg30n60b3d-datasheets-8812.pdf | 600V | 60A | TO-247-3 | Lead Free | 3 | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 208W | HGTG30N60 | Single | 208W | 1 | 36 ns | 25ns | 137 ns | SILICON | POWER CONTROL | N-CHANNEL | 55 ns | 600V | 1.45V | 56 ns | 600V | 60A | 365 ns | 480V, 30A, 3 Ω, 15V | 1.9V @ 15V, 30A | 170nC | 220A | 36ns/137ns | 550μJ (on), 680μJ (off) | |||||||||||||||||||||||||||||||||||
| IKW40N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/infineontechnologies-ikw40n60h3fksa1-datasheets-5489.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 306W | 124ns | 48 ns | 600V | 80A | 249 ns | 400V, 40A, 7.9 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 223nC | 160A | 19ns/197ns | 1.68mJ | |||||||||||||||||||||||||||||||||||||||||||
| IGW40N120H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/infineontechnologies-igw40n120h3fksa1-datasheets-5495.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 483W | 78 ns | 1200V | 80A | 414 ns | 600V, 40A, 12 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 185nC | 160A | 30ns/290ns | 3.16mJ | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRGP4063D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirgp4063d-datasheets-5499.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.13mm | Lead Free | 3 | 16 Weeks | 3 | EAR99 | No | 330W | Single | 330W | 1 | Insulated Gate BIP Transistors | 60 ns | 145 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 115 ns | 600V | 2.14V | 100 ns | 1.9V | 96A | 56ns | 100A | 210 ns | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 1.9V @ 15V, 48A | Trench | 140nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | 46ns | ||||||||||||||||||||||||||||||||||
| IGZ100N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igz100n65h5xksa1-datasheets-5507.pdf | TO-247-4 | Lead Free | 4 | 16 Weeks | 4 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 536W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 536W | 650V | 40 ns | 650V | 161A | 485 ns | 400V, 50A, 8 Ω, 15V | 2.1V @ 15V, 100A | Trench | 210nC | 400A | 30ns/421ns | 850μJ (on), 770μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IHW20N65R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ihw20n65r5xksa1-datasheets-5511.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | yes | EAR99 | Halogen Free | 150W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | POWER CONTROL | N-CHANNEL | 150W | 68 ns | 650V | 38 ns | 650V | 40A | 310 ns | 400V, 10A, 20 Ω, 15V | 1.7V @ 15V, 20A | 97nC | 60A | 24ns/250ns | 300μJ (on), 70μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| FGY160T65SPD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgy160t65spdf085-datasheets-5516.pdf | TO-247-3 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | 882W | 132ns | 650V | 240A | 400V, 160A, 15V | 2.05V @ 15V, 160A | Trench Field Stop | 480A | 53ns/98ns | 12.4mJ (on), 5.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXX110N65B4H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxx110n65b4h1-datasheets-5526.pdf | TO-247-3 | Lead Free | 18 Weeks | not_compliant | e3 | Matte Tin (Sn) | 880W | 110N65 | Single | 880W | Insulated Gate BIP Transistors | 26 ns | 146 ns | N-CHANNEL | 100 ns | 650V | 1.75V | 2.1V | 240A | 400V, 55A, 2 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 110A | PT | 183nC | 630A | 38ns/156ns | 2.2mJ (on), 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| APT60GT60BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt60gt60brg-datasheets-5528.pdf | 600V | 100A | TO-247-3 | Lead Free | 24 Weeks | Tin | No | 500W | Single | TO-247 [B] | 500W | 600V | 600V | 100A | 600V | 100A | 2.5V @ 15V, 60A | NPT | 275nC | 360A | 26ns/395ns | 3.4mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH10N170C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/ixys-ixyh10n170c-datasheets-5531.pdf | TO-247-3 | 28 Weeks | yes | 280W | 17ns | 1700V | 36A | 850V, 10A, 10 Ω, 15V | 3.8V @ 15V, 10A | 46nC | 84A | 14ns/130ns | 1.4mJ (on), 700μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGPZ10BM40FHTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 107W | 460V | 20A | 300V, 8A, 100 Ω, 5V | 2.0V @ 5V, 10A | 14nC | 500ns/4μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GR120BD15 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt25gr120bd15-datasheets-5552.pdf | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 29 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 2 days ago) | EAR99 | 521W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 75A | 1.2kV | 2.5V | 1.2kV | 75A | 1200V | 600V, 25A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 25A | NPT | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| APT40GT60BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt40gt60brg-datasheets-5554.pdf | 600V | 80A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 345W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 80A | 600V | 2V | 63 ns | 600V | 80A | 353 ns | 400V, 40A, 5 Ω, 15V | 2.5V @ 15V, 40A | NPT | 200nC | 160A | 12ns/124ns | 828μJ (off) | |||||||||||||||||||||||||||||||||||
| IXYH100N65C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyh100n65c3-datasheets-5557.pdf | TO-247-3 | Lead Free | 28 Weeks | 38.000013g | 830W | NOT SPECIFIED | Single | NOT SPECIFIED | 830W | 650V | 1.85V | 2.3V | 200A | 400V, 50A, 3 Ω, 15V | 2.3V @ 15V, 70A | PT | 164nC | 420A | 28ns/106ns | 2.15mJ (on), 840μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GP120B2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt75gp120b2g-datasheets-5571.pdf | 1.2kV | 100A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 23 Weeks | 3 | yes | ULTRA FAST, LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 1.042kW | 3 | Single | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 100A | 1042W | 1.2kV | 3.3V | 60 ns | 1.2kV | 100A | 1200V | 359 ns | 600V, 75A, 5 Ω, 15V | 3.9V @ 15V, 75A | PT | 320nC | 300A | 20ns/163ns | 1620μJ (on), 2500μJ (off) | |||||||||||||||||||||||||||||||||||
| STGW20NC60VD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw20nc60vd-datasheets-5574.pdf | 600V | 30A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 8 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA FAST | No | e3 | Tin (Sn) | 200W | STGW20 | 3 | Single | 200W | 1 | Insulated Gate BIP Transistors | 31 ns | 11.5ns | 100 ns | SILICON | POWER CONTROL | N-CHANNEL | 30A | 44ns | 600V | 2.5V | 42.5 ns | 600V | 60A | 280 ns | 390V, 20A, 3.3 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 100nC | 150A | 31ns/100ns | 220μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||
| APT33GF120BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt33gf120brg-datasheets-5409.pdf | 1.2kV | 33A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | FAST SWITCHING | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 297W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 52A | TO-247AD | 1.2kV | 2.5V | 85 ns | 1.2kV | 52A | 1200V | 284 ns | 3.2V @ 15V, 25A | NPT | 170nC | 104A | 25ns/210ns | 2.8mJ (on), 2.8mJ (off) | |||||||||||||||||||||||||||||||||||
| IRGP4066D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irgp4066dpbf-datasheets-4790.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.13mm | Lead Free | 3 | 26 Weeks | 6.500007g | No SVHC | 3 | EAR99 | Tin | No | 454W | Single | 1 | Insulated Gate BIP Transistors | 50 ns | 200 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 454W | TO-247AD | 155 ns | 600V | 1.7V | 120 ns | 2.1V | 140A | 90ns | 310 ns | 400V, 75A, 10 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 75A | Trench | 150nC | 225A | 50ns/200ns | 2.47mJ (on), 2.16mJ (off) | 80ns | ||||||||||||||||||||||||||||||||
| IXYH50N120C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh50n120c3d1-datasheets-5418.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 3 | AVALANCHE RATED | 625W | 3 | Single | 625W | 1 | Insulated Gate BIP Transistors | 24 ns | 240 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 195ns | 1.2kV | 4.2V | 82 ns | 1.2kV | 90A | 1200V | 372 ns | 600V, 50A, 5 Ω, 15V | 20V | 5V | 4V @ 15V, 50A | 142nC | 210A | 28ns/133ns | 3mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||
| IRGP4640D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-irgs4640dtrrpbf-datasheets-0201.pdf | TO-247-3 | Lead Free | 26 Weeks | 3 | EAR99 | No | 250W | IRGP4640 | Single | 125W | Insulated Gate BIP Transistors | N-CHANNEL | 250W | 89 ns | 600V | 1.9V | 1.9V | 65A | 400V, 24A, 10 Ω, 15V | 20V | 6.5V | 1.9V @ 15V, 24A | 75nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | 41ns |
