Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BS107P | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-bs107pstz-datasheets-9874.pdf&product=diodesincorporated-bs107p-6828798 | 200V | 120mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 23Ohm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | e3 | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 500mW | 1 | FET General Purpose Power | Not Qualified | 120mA | 20V | SILICON | 500mW Ta | 7 pF | 200V | N-Channel | 30 Ω @ 100mA, 5V | 120mA Ta | 2.6V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DN2530N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2530n3g-datasheets-7121.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | Single | 740mW | 1 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 15 ns | 175mA | 20V | SILICON | SWITCHING | 740mW Ta | 5 pF | 300V | N-Channel | 300pF @ 25V | 12 Ω @ 150mA, 0V | 175mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDM3622 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdm3622-datasheets-7056.pdf | 100V | 4.4A | 8-PowerWDFN | 3mm | 950μm | 2mm | Lead Free | 5 | 10 Weeks | 210mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | FLAT | Single | 2.1W | 1 | FET General Purpose Power | S-PDSO-F5 | 11 ns | 25ns | 26 ns | 35 ns | 4.4A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.1W Ta | 0.06Ohm | 100V | N-Channel | 1090pF @ 25V | 60m Ω @ 4.4A, 10V | 4V @ 250μA | 4.4A Ta | 17nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| VN0106N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn0106n3g-datasheets-7141.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | 3 ns | 5ns | 5 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 1W Tc | 3Ohm | 8 pF | 60V | N-Channel | 65pF @ 25V | 3 Ω @ 1A, 10V | 2.4V @ 1mA | 350mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD053N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd053n06natma1-datasheets-7094.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 3W | 1 | R-PSSO-G2 | 12 ns | 12ns | 7 ns | 20 ns | 45A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3W Ta 83W Tc | TO-252AA | 60 mJ | N-Channel | 2000pF @ 30V | 5.3m Ω @ 45A, 10V | 2.8V @ 36μA | 18A Ta 45A Tc | 27nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIR696DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir696dpt1ge3-datasheets-6807.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 125V | 104W Tc | N-Channel | 1410pF @ 75V | 11.5m Ω @ 20A, 10V | 4.5V @ 250μA | 60A Tc | 38nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF520NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | 100V | 9.7A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 12 Weeks | Unknown | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 4.5 ns | 23ns | 23 ns | 32 ns | 9.7A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 48W Tc | 0.2Ohm | 100V | N-Channel | 330pF @ 25V | 200m Ω @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STD5N52U | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFASTmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std5n52u-datasheets-7149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | No SVHC | 1.28Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD5N | 3 | Single | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 11.4 ns | 13.6ns | 15 ns | 23.1 ns | 4.4A | 30V | SILICON | SWITCHING | 3.75V | 70W Tc | 525V | N-Channel | 529pF @ 25V | 3.75 V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 16.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMS86105 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86105-datasheets-7134.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 13 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 48W | 1 | FET General Purpose Power | R-PDSO-F5 | 6.7 ns | 2.1ns | 2.4 ns | 12 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 2.8V | 2.5W Ta 48W Tc | MO-240AA | 6A | 30A | 0.034Ohm | 50 mJ | 100V | N-Channel | 645pF @ 50V | 34m Ω @ 6A, 10V | 4V @ 250μA | 6A Ta 26A Tc | 11nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPH3R70APL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 100V | 960mW Ta 170W Tc | N-Channel | 6300pF @ 50V | 3.7m Ω @ 45A, 10V | 2.5V @ 1mA | 90A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7493TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf7493trpbf-datasheets-6869.pdf | 80V | 9.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 15MOhm | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8.3 ns | 7.5ns | 12 ns | 30 ns | 9.3A | 20V | 80V | SILICON | SWITCHING | 4V | 2.5W Tc | 56 ns | 74A | 80V | N-Channel | 1510pF @ 25V | 4 V | 15m Ω @ 5.6A, 10V | 4V @ 250μA | 9.3A Tc | 53nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI7172ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7172adpt1re3-datasheets-5978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | N-Channel | 1110pF @ 100V | 50mOhm @ 10A, 10V | 3.1V @ 250μA | 19.5nC @ 10V | 7.5V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ019N03LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz019n03lsatma1-datasheets-6993.pdf | 8-PowerTDFN | 3 | 18 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 69W | 1 | Not Qualified | S-PDSO-N3 | 6.8ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2V | 2.1W Ta 69W Tc | 0.0025Ohm | N-Channel | 2800pF @ 15V | 1.9m Ω @ 20A, 10V | 2V @ 250μA | 22A Ta . 40A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD70P04P409ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipd70p04p409atma1-datasheets-7001.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 19 ns | 12ns | 31 ns | 24 ns | 73A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 75W Tc | 292A | 0.0089Ohm | 24 mJ | P-Channel | 4810pF @ 25V | 8.9m Ω @ 70A, 10V | 4V @ 120μA | 73A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD036N04LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipd036n04lgbtma1-datasheets-6809.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 94W Tc | 90A | 400A | 0.0049Ohm | 55 mJ | N-Channel | 6300pF @ 20V | 3.6m Ω @ 90A, 10V | 2V @ 45μA | 90A Tc | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7820TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irf7820trpbf-datasheets-6687.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 12 Weeks | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 7.1 ns | 3.2ns | 12 ns | 14 ns | 3.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 4V | 2.5W Ta | N-Channel | 1750pF @ 100V | 4 V | 78m Ω @ 2.2A, 10V | 5V @ 100μA | 3.7A Ta | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R3-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn4r330bl118-datasheets-6885.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 103W | 1 | R-PSSO-G2 | 28 ns | 58ns | 21 ns | 44 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 103W Tc | 465A | 0.0052Ohm | 74 mJ | 30V | N-Channel | 2400pF @ 15V | 4.1m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 41.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR8314TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfr8314trpbf-datasheets-6910.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3.949996g | 2.2mOhm | 1 | Single | D-PAK (TO-252AA) | 4.945nF | 19 ns | 98ns | 30 ns | 28 ns | 90A | 20V | 30V | 125W Tc | 2.2mOhm | N-Channel | 4945pF @ 15V | 2.2mOhm @ 90A, 10V | 2.2V @ 100μA | 90A Tc | 54nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN015-60BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn01560bs118-datasheets-6391.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 86W | 1 | R-PSSO-G2 | 12 ns | 13ns | 7 ns | 27 ns | 50A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 86W Tc | 44 mJ | 60V | N-Channel | 1220pF @ 30V | 14.8m Ω @ 15A, 10V | 4V @ 1mA | 50A Tc | 20.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18537NQ5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18537 | 1 | Single | NOT SPECIFIED | 1 | 5.8 ns | 4ns | 3.2 ns | 14.4 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.2W Ta 75W Tc | 5.2 pF | 55 mJ | 60V | N-Channel | 1480pF @ 30V | 13m Ω @ 12A, 10V | 3.5V @ 250μA | 50A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AOI4286 | Alpha & Omega Semiconductor Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-251-3 Stub Leads, IPak | 18 Weeks | FET General Purpose Power | 14A | Single | 100V | 100V | 2.5W Ta 30W Tc | 0.068Ohm | N-Channel | 390pF @ 50V | 68m Ω @ 5A, 10V | 2.9V @ 250μA | 4A Ta 14A Tc | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7106DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7106dnt1e3-datasheets-6905.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 14 Weeks | Unknown | 6.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 25 ns | 15ns | 15 ns | 50 ns | 19.5A | 12V | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 60A | 45 mJ | 20V | N-Channel | 6.2m Ω @ 19.5A, 4.5V | 1.5V @ 250μA | 12.5A Ta | 27nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| IRFZ24NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfz24npbf-datasheets-6959.pdf | 55V | 17A | TO-220-3 | 10.5156mm | 19.8mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 70mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | Tin | No | 1 | Single | 45W | 1 | FET General Purpose Power | 175°C | 4.9 ns | 34ns | 27 ns | 19 ns | 17A | 20V | 55V | SILICON | DRAIN | SWITCHING | 2V | 45W Tc | TO-220AB | 68A | 55V | N-Channel | 370pF @ 25V | 4 V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AOI21357 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 6.2W Ta 78W Tc | P-Channel | 2830pF @ 15V | 8m Ω @ 20A, 10V | 2.3V @ 250μA | 23A Ta 70A Tc | 70nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R0-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn1r030yldx-datasheets-6734.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | HIGH RELIABILITY | Tin | No | YES | GULL WING | 4 | 1 | Single | 1 | 32.4 ns | 44.4ns | 31.7 ns | 43 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 238W Tc | MO-235 | 30V | N-Channel | 8598pF @ 15V | 1.02m Ω @ 25A, 10V | 2.2V @ 2mA | 100A Tc | 121.35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7143DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7143dpt1ge3-datasheets-6748.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 10MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.2W | 1 | Other Transistors | R-XDSO-C5 | 16.1A | 20V | SILICON | DRAIN | SWITCHING | 30V | 4.2W Ta 35.7W Tc | 35A | 60A | -30V | P-Channel | 2230pF @ 15V | -1.2 V | 10m Ω @ 16.1A, 10V | 2.8V @ 250μA | 35A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK7Y7R8-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y7r880ex-datasheets-6752.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | SINGLE | GULL WING | 4 | 1 | 238W | 1 | 16 ns | 25ns | 24 ns | 43 ns | 100A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 238W Tc | MO-235 | 0.0078Ohm | 80V | N-Channel | 5347pF @ 25V | 7.8m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 63.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ075N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz075n08ns5atma1-datasheets-6726.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | EAR99 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 69W | 1 | S-PDSO-N3 | 10 ns | 4ns | 4 ns | 19 ns | 40A | 20V | 80V | SILICON | DRAIN | SWITCHING | 69W Tc | 0.0075Ohm | N-Channel | 2080pF @ 40V | 7.5m Ω @ 20A, 10V | 3.8V @ 36μA | 40A Tc | 29.5nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8647L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd8647l-datasheets-6706.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 13MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 3ns | 2 ns | 19 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3.1W Ta 43W Tc | 52A | 40V | N-Channel | 1640pF @ 20V | 9m Ω @ 13A, 10V | 3V @ 250μA | 14A Ta 42A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIR418DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir418dpt1ge3-datasheets-6744.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 19 ns | 73ns | 12 ns | 32 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4V | 39W Tc | 23.5A | 70A | 0.005Ohm | 45 mJ | 40V | N-Channel | 2410pF @ 20V | 2.4 V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V |
