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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR418DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir418dpt1ge3-datasheets-6744.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 19 ns | 73ns | 12 ns | 32 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4V | 39W Tc | 23.5A | 70A | 0.005Ohm | 45 mJ | 40V | N-Channel | 2410pF @ 20V | 2.4 V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPD50P03P4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd50p03p4l11atma1-datasheets-6549.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 58W Tc | 50A | 200A | 0.0105Ohm | 100 mJ | P-Channel | 3770pF @ 25V | 10.5m Ω @ 50A, 10V | 2V @ 85μA | 50A Tc | 55nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS4435BZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms4435bz-datasheets-6602.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 26 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 39W | 1 | Other Transistors | R-PDSO-F5 | 9 ns | 10ns | 19 ns | 35 ns | 9A | 25V | SILICON | DRAIN | SWITCHING | 30V | -1.9V | 2.5W Ta 39W Tc | MO-240AA | 9A | 50A | 0.02Ohm | -30V | P-Channel | 2050pF @ 15V | 20m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta 18A Tc | 47nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| SUD19P06-60L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud19p0660le3-datasheets-6610.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 14 Weeks | 1.437803g | 60mOhm | 3 | No | 1 | Single | 2.7W | 1 | TO-252, (D-Pak) | 2.7nF | 8 ns | 9ns | 30 ns | 65 ns | 19A | 20V | 60V | 2.7W Ta 46W Tc | 60mOhm | P-Channel | 1710pF @ 25V | 60mOhm @ 10A, 10V | 3V @ 250μA | 19A Tc | 40nC @ 10V | 8.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD7ANM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std7anm60n-datasheets-6632.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.4mm | 4.6mm | 9.35mm | Lead Free | 16 Weeks | 3 | EAR99 | No | STD7 | 1 | Single | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | 45W Tc | 600V | N-Channel | 363pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R900P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd80r900p7atma1-datasheets-6582.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 45W Tc | TO-252AA | 14A | 0.9Ohm | 13 mJ | N-Channel | 350pF @ 500V | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 6A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN5325N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-tn5325k1g-datasheets-0773.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 18 Weeks | 453.59237mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 740mW | 1 | 20 ns | 15ns | 15 ns | 25 ns | 215mA | 20V | SWITCHING | 740mW Ta | 7Ohm | 250V | N-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | 215mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR15N20DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | 200V | 17A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 165Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 9.7 ns | 32ns | 8.9 ns | 17 ns | 17A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 3W Ta 140W Tc | TO-252AA | 68A | 260 mJ | 200V | N-Channel | 910pF @ 25V | 5.5 V | 165m Ω @ 10A, 10V | 5.5V @ 250μA | 17A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF7815TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf7815trpbf-datasheets-6277.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 43MOhm | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8.4 ns | 3.2ns | 8.3 ns | 14 ns | 5.1A | 20V | SILICON | SWITCHING | 2.5W Ta | 529 mJ | 150V | N-Channel | 1647pF @ 75V | 43m Ω @ 3.1A, 10V | 5V @ 100μA | 5.1A Ta | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17308Q3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD17308 | Single | 1 | 44A | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.3V | 2.7W Ta 28W Tc | 14A | 167A | 0.0165Ohm | 35 pF | 65 mJ | N-Channel | 700pF @ 15V | 10.3m Ω @ 10A, 8V | 1.8V @ 250μA | 14A Ta 44A Tc | 5.1nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STD26NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std26nf10-datasheets-6420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 38MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD26N | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 60ns | 15 ns | 60 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 480 mJ | 100V | N-Channel | 1550pF @ 25V | 38m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7315DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7315dnt1ge3-datasheets-6383.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | Tin | e3 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 3.8W | 1 | S-PDSO-C5 | 8 ns | 9ns | 8 ns | 23 ns | -8.9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 3.8W Ta 52W Tc | -150V | P-Channel | 880pF @ 75V | 315m Ω @ 2.4A, 10V | 4V @ 250μA | 8.9A Tc | 30nC @ 10V | 7.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86113LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd86113lz-datasheets-6477.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 3.6 ns | 1.3ns | 1.6 ns | 9.7 ns | 4.2A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 29W Tc | 5.5A | 100V | N-Channel | 285pF @ 50V | 104m Ω @ 4.2A, 10V | 3V @ 250μA | 4.2A Ta 5.5A Tc | 6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN011-80YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn01180ys115-datasheets-5542.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 18MOhm | 4 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 117W | 1 | 23 ns | 20ns | 12 ns | 40 ns | 67A | 20V | 80V | SILICON | DRAIN | SWITCHING | 117W Tc | MO-235 | 266A | 121 mJ | 80V | N-Channel | 2800pF @ 40V | 11m Ω @ 25A, 10V | 4V @ 1mA | 67A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r600c6atma1-datasheets-6539.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 63W | 1 | R-PSSO-G2 | 12 ns | 9ns | 13 ns | 80 ns | 7.3A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | 0.6Ohm | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STS8N6LF6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts8n6lf6ag-datasheets-5597.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | STS8N | 60V | 3.2W Ta | N-Channel | 1340pF @ 25V | 24m Ω @ 4A, 10V | 2.5V @ 250μA | 8A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6575 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds6575-datasheets-6574.pdf | -20V | -10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 13MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 16 ns | 9ns | 78 ns | 196 ns | 10A | 8V | SILICON | SWITCHING | 20V | 2.5W Ta | -20V | P-Channel | 4951pF @ 10V | -600 mV | 13m Ω @ 10A, 4.5V | 1.5V @ 250μA | 10A Ta | 74nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN012-100YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn012100ys115-datasheets-6175.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 130W Tc | MO-235 | 0.012Ohm | 170 mJ | N-Channel | 3500pF @ 50V | 12m Ω @ 15A, 10V | 4V @ 1mA | 60A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7101DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7101dnt1ge3-datasheets-6261.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | 30 | 3.7W | 1 | 150°C | S-PDSO-C5 | 12 ns | 10ns | 8 ns | 38 ns | -16.9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -1.2V | 3.7W Ta 52W Tc | 35A | 0.0072Ohm | 20 mJ | -30V | P-Channel | 3595pF @ 15V | 7.2m Ω @ 15A, 10V | 2.5V @ 250μA | 35A Tc | 102nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMC8651 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8651-datasheets-6272.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | Lead Free | 5 | 34 Weeks | 32.13mg | No SVHC | 6.1MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e4 | Nickel/Palladium (Ni/Pd) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.3W | 1 | FET General Purpose Power | Not Qualified | 150°C | S-PDSO-N5 | 18 ns | 9ns | 6 ns | 35 ns | 15A | 12V | SILICON | DRAIN | SWITCHING | 800mV | 2.3W Ta 41W Tc | 64A | 60A | 30V | N-Channel | 3365pF @ 15V | 1.1 V | 6.1m Ω @ 15A, 4.5V | 1.5V @ 250μA | 15A Ta 20A Tc | 27.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRFR7440TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7440trpbf-datasheets-6297.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.52mm | Lead Free | 2 | 15 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 1 | 140W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 11 ns | 39ns | 34 ns | 51 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 140W Tc | TO-252AA | 90A | 760A | 0.0024Ohm | 40V | N-Channel | 4610pF @ 25V | 3 V | 2.4m Ω @ 90A, 10V | 3.9V @ 100μA | 90A Tc | 134nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| DN3535N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microchiptechnology-dn3535n8g-datasheets-6265.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 18 Weeks | 52.786812mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | 15 ns | 20ns | 20 ns | 20 ns | 230mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 0.5A | 350V | N-Channel | 360pF @ 25V | 10 Ω @ 150mA, 0V | 230mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD95R2K0P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd95r2k0p7atma1-datasheets-5998.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 950V | 37W Tc | N-Channel | 330pF @ 400V | 2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6268 | Alpha & Omega Semiconductor Inc. | $2.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TA | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6268-datasheets-6070.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 60V | 56W Tc | N-Channel | 2520pF @ 30V | 4.7m Ω @ 20A, 10V | 2.3V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y6R0-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y6r060ex-datasheets-6086.pdf | 22.225mm | SC-100, SOT-669 | 15.875mm | Black | Lead Free | Brass, Metal, Plastic | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | Single | 195W | 1 | 12 ns | 19ns | 21 ns | 36 ns | 100A | 20V | 60V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 195W Tc | MO-235 | Tin | 0.006Ohm | N-Channel | 4021pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 45.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3103TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlr3103trpbf-datasheets-6103.pdf | 30V | 52A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 19mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 69W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 210ns | 54 ns | 20 ns | 46A | 16V | SILICON | DRAIN | SWITCHING | 1V | 107W Tc | TO-252AA | 20A | 220A | 240 mJ | 30V | N-Channel | 1600pF @ 25V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| SQJA80EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqja80ept1ge3-datasheets-6091.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 16 ns | 31 ns | 60A | 20V | 80V | 68W Tc | 5.8mOhm | 80V | N-Channel | 3800pF @ 25V | 7mOhm @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y6R0-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y6r060e115-datasheets-6062.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 195W | 1 | 24 ns | 44ns | 37 ns | 60 ns | 100A | 10V | 60V | SILICON | DRAIN | SWITCHING | 195W Tc | MO-235 | 0.006Ohm | N-Channel | 6319pF @ 25V | 5.2m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 39.4nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60N10S4L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd60n10s4l12atma1-datasheets-6079.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3.949996g | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 4 ns | 3ns | 21 ns | 20 ns | 60A | 16V | 100V | SILICON | DRAIN | 94W Tc | 240A | 100V | N-Channel | 3170pF @ 25V | 12m Ω @ 60A, 10V | 2.1V @ 46μA | 60A Tc | 49nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H010LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt10h010lk313-datasheets-6181.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 19 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3W Ta | 60.7A | 250A | 0.015Ohm | 150 mJ | N-Channel | 2592pF @ 50V | 8.8m Ω @ 13A, 10V | 3V @ 250μA | 68.8A Tc | 53.7nC @ 10V | 6V 10V | ±20V |
