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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLR3103TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlr3103trpbf-datasheets-6103.pdf | 30V | 52A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 19mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 69W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 210ns | 54 ns | 20 ns | 46A | 16V | SILICON | DRAIN | SWITCHING | 1V | 107W Tc | TO-252AA | 20A | 220A | 240 mJ | 30V | N-Channel | 1600pF @ 25V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| SQJA80EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqja80ept1ge3-datasheets-6091.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 16 ns | 31 ns | 60A | 20V | 80V | 68W Tc | 5.8mOhm | 80V | N-Channel | 3800pF @ 25V | 7mOhm @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y6R0-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y6r060e115-datasheets-6062.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 195W | 1 | 24 ns | 44ns | 37 ns | 60 ns | 100A | 10V | 60V | SILICON | DRAIN | SWITCHING | 195W Tc | MO-235 | 0.006Ohm | N-Channel | 6319pF @ 25V | 5.2m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 39.4nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60N10S4L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd60n10s4l12atma1-datasheets-6079.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3.949996g | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 4 ns | 3ns | 21 ns | 20 ns | 60A | 16V | 100V | SILICON | DRAIN | 94W Tc | 240A | 100V | N-Channel | 3170pF @ 25V | 12m Ω @ 60A, 10V | 2.1V @ 46μA | 60A Tc | 49nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H010LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt10h010lk313-datasheets-6181.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 19 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3W Ta | 60.7A | 250A | 0.015Ohm | 150 mJ | N-Channel | 2592pF @ 50V | 8.8m Ω @ 13A, 10V | 3V @ 250μA | 68.8A Tc | 53.7nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16322Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16322 | 8 | Single | 3.1W | 1 | FET General Purpose Power | 6.1 ns | 10.7ns | 3.7 ns | 12.3 ns | 97A | 10V | 25V | SILICON | DRAIN | SWITCHING | 1.1V | 3.1W Ta | 0.007Ohm | 70 pF | N-Channel | 1365pF @ 12.5V | 1.1 V | 5m Ω @ 20A, 8V | 1.4V @ 250μA | 21A Ta 97A Tc | 9.7nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||
| SQJ407EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqj407ept1ge3-datasheets-6234.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 260 | 1 | NOT SPECIFIED | 68W | 1 | 175°C | R-PSSO-G4 | 23 ns | 72 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 68W Tc | 0.0044Ohm | 84 mJ | -30V | P-Channel | 10700pF @ 25V | 4.4m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 260nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD19P06-60-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sud19p0660ge3-datasheets-5898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 60mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 2.3W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 8 ns | 9ns | 30 ns | 65 ns | -19A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1V | 2.3W Ta 38.5W Tc | 24.2 mJ | -60V | P-Channel | 1710pF @ 25V | 60m Ω @ 10A, 10V | 3V @ 250μA | 18.3A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDT86106LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-261-4, TO-261AA | 3.7mm | 1.7mm | 6.7mm | 4 | 8 Weeks | 250.2mg | No SVHC | 4 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.2W | 1 | FET General Purpose Power | 3.8 ns | 1.3ns | 1.5 ns | 10 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 2.2W Ta | 5 pF | 100V | N-Channel | 315pF @ 50V | 1.5 V | 108m Ω @ 3.2A, 10V | 2.2V @ 250μA | 3.2A Ta | 7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4874BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4874bdyt1e3-datasheets-5760.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 7mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.6W | 1 | FET General Purpose Power | 16 ns | 10ns | 10 ns | 57 ns | 16A | 20V | SILICON | 30V | 30V | 3V | 1.6W Ta | N-Channel | 3230pF @ 15V | 7m Ω @ 16A, 10V | 3V @ 250μA | 12A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STD65N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std65n3llh5-datasheets-5023.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | Figure 19 | GULL WING | NOT SPECIFIED | STD65N | 3 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Powers | R-PSSO-G2 | 11.2ns | 6 ns | 32.4 ns | 65A | 22V | SILICON | DRAIN | SWITCHING | 50W Tc | 260A | 0.0097Ohm | 30V | N-Channel | 1290pF @ 25V | 6.9m Ω @ 32.5A, 10V | 3V @ 250μA | 65A Tc | 8nC @ 4.5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQD2N90TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd2n90tm-datasheets-5781.pdf | 900V | 1.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15 ns | 35ns | 30 ns | 20 ns | 1.7A | 30V | SILICON | DRAIN | SWITCHING | 2.5W Ta 50W Tc | 6.8A | 900V | N-Channel | 500pF @ 25V | 7.2 Ω @ 850mA, 10V | 5V @ 250μA | 1.7A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| VP2106N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/microchiptechnology-vp2106n3g-datasheets-5820.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | BOTTOM | 1 | Single | 740mW | 1 | 4 ns | 5ns | 5 ns | 5 ns | 250mA | 20V | SILICON | SWITCHING | 60V | 1W Tc | 0.25A | 8 pF | -60V | P-Channel | 60pF @ 25V | 12 Ω @ 500mA, 10V | 3.5V @ 1mA | 250mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQD4P40TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd4p40tm-datasheets-5826.pdf | -400V | -2.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 55ns | 37 ns | 35 ns | 2.7A | 30V | SILICON | DRAIN | SWITCHING | 400V | 2.5W Ta 50W Tc | 260 mJ | -400V | P-Channel | 680pF @ 25V | 3.1 Ω @ 1.35A, 10V | 5V @ 250μA | 2.7A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| DN3135N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn3135k1g-datasheets-1920.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 18 Weeks | 52.786812mg | No SVHC | 3 | EAR99 | LOW THRESHOLD | 135A | e3 | Matte Tin (Sn) | 350V | FLAT | 260 | 1 | Single | 40 | 1.3W | 1 | FET General Purpose Power | Not Qualified | 10 ns | 15ns | 15 ns | 15 ns | 135mA | 20V | SILICON | DRAIN | SWITCHING | 1.3W Ta | 350V | N-Channel | 120pF @ 25V | 35 Ω @ 150mA, 0V | 135mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPD18P06PGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-spd18p06pgbtma1-datasheets-5841.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | 4 | 80W | 1 | R-PSSO-G2 | 12 ns | 5.8ns | 11 ns | 24.5 ns | 18.6A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 80W Tc | TO-252AB | 74.4A | P-Channel | 860pF @ 25V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.6A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ443EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj443ept1ge3-datasheets-5887.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 83W Tc | P-Channel | 2030pF @ 20V | 29mOhm @ 18A, 10V | 2.5V @ 250μA | 40A Tc | 57nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17527Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | FLAT | 260 | CSD17527 | 8 | Single | 3W | 1 | FET General Purpose Power | R-PDSO-F5 | 5.6 ns | 8.2ns | 3.2 ns | 9.8 ns | 65A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta | 33 pF | 45 mJ | 30V | N-Channel | 506pF @ 15V | 10.8m Ω @ 11A, 10V | 2V @ 250μA | 65A Tc | 3.4nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD50P04P413ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd50p04p413atma1-datasheets-5912.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 17 ns | 10ns | 28 ns | 22 ns | 50A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 58W Tc | 20A | 0.0126Ohm | 18 mJ | P-Channel | 3670pF @ 25V | 12.6m Ω @ 50A, 10V | 4V @ 85μA | 50A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7308DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7308dnt1ge3-datasheets-5925.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 58MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 15ns | 10 ns | 20 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.2W Ta 19.8W Tc | 5.4A | 20A | 60V | N-Channel | 665pF @ 15V | 58m Ω @ 5.4A, 10V | 3V @ 250μA | 6A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STD2N62K3 | STMicroelectronics | $0.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std2n62k3-datasheets-5920.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 3.6Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | GULL WING | STD2N62 | 3 | Single | 45W | 1 | R-PSSO-G2 | 8 ns | 4.4ns | 22 ns | 21 ns | 2.2A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 8.8A | 85 mJ | 620V | N-Channel | 340pF @ 50V | 3.6 Ω @ 1.1A, 10V | 4.5V @ 50μA | 2.2A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR7446TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfr7446trpbf-datasheets-5703.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 13ns | 20 ns | 32 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3V | 98W Tc | TO-252AA | 520A | N-Channel | 3150pF @ 25V | 3.9m Ω @ 56A, 10V | 3.9V @ 100μA | 56A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STW23N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw23n80k5-datasheets-5716.pdf | TO-247-3 | Lead Free | 17 Weeks | EAR99 | NOT SPECIFIED | STW23N | NOT SPECIFIED | 16A | 800V | 190W Tc | N-Channel | 1000pF @ 100V | 280m Ω @ 8A, 10V | 5V @ 100μA | 16A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4686DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4686dyt1e3-datasheets-5730.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3W | 1 | FET General Purpose Power | 20 ns | 20ns | 8 ns | 20 ns | 18.2A | 20V | SILICON | SWITCHING | 1V | 3W Ta 5.2W Tc | 30V | N-Channel | 1220pF @ 15V | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 18.2A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STS5NF60L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts5nf60l-datasheets-5572.pdf | 60V | 5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.65mm | 4mm | Lead Free | 8 | 12 Weeks | No SVHC | 45mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | Gold | No | e4 | DUAL | GULL WING | 260 | STS5N | 8 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 13 ns | 28ns | 10 ns | 45 ns | 2.5A | 15V | SILICON | SWITCHING | 1.7V | 2.5W Tc | 5A | 20A | 60V | N-Channel | 1250pF @ 25V | 55m Ω @ 2.5A, 10V | 2.5V @ 250μA | 5A Tc | 17nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TPH5900CNH,L1Q | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 12 Weeks | 850.995985mg | 8 | yes | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | S-PDSO-F5 | 14 ns | 5.2ns | 4.5 ns | 19 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.6W Ta 42W Tc | 9A | 35A | 0.059Ohm | 36 mJ | 150V | N-Channel | 600pF @ 75V | 59m Ω @ 4.5A, 10V | 4V @ 200μA | 9A Ta | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A18KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp6a18ktc-datasheets-5471.pdf | -60V | -10.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 55mOhm | 3 | no | EAR99 | LOW THRESHOLD; FAST SWITCHING | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 10.1W | 1 | Other Transistors | R-PSSO-G2 | 4.6 ns | 5.8ns | 23 ns | 55 ns | 10.4A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.15W Ta | -60V | P-Channel | 1580pF @ 30V | 55m Ω @ 3.5A, 10V | 1V @ 250μA | 6.8A Ta | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STP36N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp36n60m6-datasheets-5606.pdf | TO-220-3 | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | NO | SINGLE | NOT SPECIFIED | STP36N | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 208W Tc | TO-220AB | 30A | 102A | 0.099Ohm | 750 mJ | N-Channel | 1960pF @ 100V | 99m Ω @ 15A, 10V | 4.75V @ 250μA | 30A Tc | 44.3nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2450K4-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/microchiptechnology-dn2450k4g-datasheets-5609.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3.949996g | No SVHC | 3 | EAR99 | LOW THRESHOLD | Tin | 8541.90.00.00 | e3 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 20ns | 15 ns | 15 ns | 350mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta | TO-252AA | 1A | 500V | N-Channel | 200pF @ 25V | 10 Ω @ 300mA, 0V | 350mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS6576 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds6576-datasheets-5644.pdf | -20V | -11A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 14MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 18 ns | 17ns | 79 ns | 124 ns | 11A | 12V | -20V | SILICON | SWITCHING | 20V | -830mV | 2.5W Ta | -20V | P-Channel | 4044pF @ 10V | -830 mV | 14m Ω @ 11A, 4.5V | 1.5V @ 250μA | 11A Ta | 60nC @ 4.5V | 2.5V 4.5V | ±12V |
