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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Number of Drivers | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Output Configuration | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SCT2120AFC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-220-3 | Lead Free | 3 | 19 Weeks | 6.000006g | No SVHC | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 22 ns | 31ns | 19 ns | 60 ns | 29A | 22V | SWITCHING | 4V | 165W Tc | TO-220AB | 72A | 650V | N-Channel | 1200pF @ 500V | 156m Ω @ 10A, 18V | 4V @ 3.3mA | 29A Tc | 61nC @ 18V | 18V | +22V, -6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX240N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx240n25x3-datasheets-2256.pdf | TO-247-3 | 19 Weeks | 250V | 1250W Tc | N-Channel | 23800pF @ 25V | 5m Ω @ 120A, 10V | 4.5V @ 8mA | 240A Tc | 345nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCH2080KEC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohm-sch2080kec-datasheets-3164.pdf | TO-247-3 | 15.9mm | 25.83mm | 20.95mm | Lead Free | 3 | 19 Weeks | Unknown | 3 | On/Off | EAR99 | No | 1 | Single | 262W | 1 | FET General Purpose Power | 175°C | 2A | 37 ns | 33ns | 28 ns | 70 ns | 40A | 22V | SWITCHING | 1200V | 2.8V | High Side | 262W Tc | 80A | 1.2kV | N-Channel | 1850pF @ 800V | 4 V | 117m Ω @ 10A, 18V | 4V @ 4.4mA | 40A Tc | 106nC @ 18V | 18V | +22V, -6V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN600N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, TrenchT2™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtn600n04t2-datasheets-2276.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | No | 200A | NICKEL | UPPER | UNSPECIFIED | 4 | 940W | 1 | FET General Purpose Power | 40V | 600A | 40 ns | 20ns | 250 ns | 90 ns | 600A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1 | 940W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.05m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3030KLGC11 | ROHM Semiconductor | $71.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-247-3 | 25.5mm | Lead Free | 3 | 21 Weeks | yes | EAR99 | SCT3030KLGC11 | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 339W | 1 | 175°C | R-PSFM-T3 | 24 ns | 61 ns | 72A | 13V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 4.15V | 339W Tc | 180A | 0.039Ohm | 1.2kV | N-Channel | 2222pF @ 800V | 39m Ω @ 27A, 18V | 5.6V @ 13.3mA | 72A Tc | 131nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVHL080N120SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/onsemiconductor-nvhl080n120sc1-datasheets-2305.pdf | TO-247-3 | 10 Weeks | yes | not_compliant | e3 | Tin (Sn) | 1200V | 348W Tc | N-Channel | 1670pF @ 800V | 110m Ω @ 20A, 20V | 4.3V @ 5mA | 44A Tc | 56nC @ 20V | 20V | +25V, -15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN360N15T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn360n15t2-datasheets-2203.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4mOhm | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | unknown | 100A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 150V | 310A | 50 ns | 170ns | 265 ns | 115 ns | 310A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1 | 1070W Tc | 900A | N-Channel | 47500pF @ 25V | 4m Ω @ 60A, 10V | 5V @ 8mA | 310A Tc | 715nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD19536KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19536 | 1 | Single | NOT SPECIFIED | 1 | 14 ns | 8ns | 5 ns | 38 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 375W Tc | 400A | 806 mJ | 100V | N-Channel | 12000pF @ 50V | 2.7m Ω @ 100A, 10V | 3.2V @ 250μA | 150A Ta | 153nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFK230N20T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfk230n20t-datasheets-3147.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.67kW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 230A | 20V | DRAIN | SWITCHING | 1670W Tc | 630A | 0.0075Ohm | 3000 mJ | 200V | N-Channel | 28000pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 230A Tc | 378nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKN75N60C | IXYS | $21.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkn75n60c-datasheets-2217.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 36MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 3 | 560W | 1 | FET General Purpose Power | 30ns | 10 ns | 110 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 560W Tc | 250A | 600V | N-Channel | 36m Ω @ 50A, 10V | 3.9V @ 5mA | 75A Tc | 500nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMO580-02F | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-vmo58002f-datasheets-2219.pdf | 200V | 580A | Y3-Li | Lead Free | 11 | 4 | yes | EAR99 | e3 | Tin (Sn) | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X11 | 500ns | 500 ns | 900 ns | 580A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 0.0038Ohm | 200V | N-Channel | 3.8m Ω @ 430A, 10V | 4V @ 50mA | 580A Tc | 2750nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN200N10L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn200n10l2-datasheets-2221.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 11MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | 178A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 830W Tc | 500A | 5000 mJ | 100V | N-Channel | 23000pF @ 25V | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 178A Tc | 540nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002NXBKR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/nexperiausainc-2n7002nxbkr-datasheets-2223.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | 60V | 310mW Ta 1.67W Tc | N-Channel | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 270mA Ta 330mA Tc | 1nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW11NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw11nk90z-datasheets-2180.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | HIGH VOLTAGE | No | STW11N | 3 | Single | 200W | 1 | FET General Purpose Power | 30 ns | 19ns | 50 ns | 76 ns | 9.2A | 30V | SILICON | SWITCHING | 3.75V | 200W Tc | TO-247AC | 0.98Ohm | 400 mJ | 900V | N-Channel | 3000pF @ 25V | 980m Ω @ 4.6A, 10V | 4.5V @ 100μA | 9.2A Tc | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA180N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n10t-datasheets-2185.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 6.4MOhm | yes | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | 450A | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP96P085T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixth96p085t-datasheets-1752.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | PURE TIN | 3 | Single | 298W | 1 | Other Transistors | 96A | 15V | SILICON | DRAIN | SWITCHING | 85V | 298W Tc | TO-220AB | -85V | P-Channel | 13100pF @ 25V | 13m Ω @ 48A, 10V | 4V @ 250μA | 96A Tc | 180nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH170N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh170n25x3-datasheets-2189.pdf | TO-247-3 | 19 Weeks | yes | 250V | 960W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA52P10P | IXYS | $5.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta52p10p-datasheets-3128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 29ns | 22 ns | 38 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | 130A | 0.05Ohm | 1500 mJ | -100V | P-Channel | 2845pF @ 25V | 50m Ω @ 500mA, 10V | 4.5V @ 250μA | 52A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTN660N04T4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixtn660n04t4-datasheets-2193.pdf | SOT-227-4, miniBLOC | 28 Weeks | yes | unknown | 660A | 40V | 1040W Tc | N-Channel | 44000pF @ 25V | 0.85m Ω @ 100A, 10V | 4V @ 250μA | 660A Tc | 860nC @ 10V | Current Sensing | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH320N10T2 | IXYS | $31.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfh320n10t2-datasheets-2196.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 46ns | 177 ns | 73 ns | 320A | 20V | SILICON | DRAIN | SWITCHING | 1000W Tc | 800A | 0.0035Ohm | 1500 mJ | 100V | N-Channel | 26000pF @ 25V | 3.5m Ω @ 100A, 10V | 4V @ 250μA | 320A Tc | 430nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH160N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth160n10t-datasheets-2198.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 7MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-247AD | 430A | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK360N15T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk360n15t2-datasheets-3138.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 150V | 360A | 50 ns | 170ns | 265 ns | 115 ns | 360A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1670W Tc | 900A | 0.004Ohm | N-Channel | 47500pF @ 25V | 4m Ω @ 60A, 10V | 5V @ 8mA | 360A Tc | 715nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100-datasheets-2166.pdf | 1kV | 12A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 1.05Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 62 ns | 12A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 300W Tc | TO-247AD | 48A | 1kV | N-Channel | 4000pF @ 25V | 4.5 V | 1.05 Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTK40P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtk40p50p-datasheets-2169.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | 230MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 40A | 20V | SILICON | DRAIN | SWITCHING | 500V | 890W Tc | 3500 mJ | -500V | P-Channel | 11500pF @ 25V | 230m Ω @ 20A, 10V | 4V @ 1mA | 40A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN48N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfn48n50-datasheets-2171.pdf | 500V | 48A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | No SVHC | 100mOhm | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 60ns | 30 ns | 100 ns | 48A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 520W Tc | 192A | 500V | N-Channel | 8400pF @ 25V | 4 V | 100m Ω @ 500mA, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN180N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn180n25t-datasheets-2174.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 168A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 900W Tc | 164A | 500A | 0.0129Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 12.9m Ω @ 60A, 10V | 5V @ 8mA | 168A Tc | 345nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX230N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx230n20t-datasheets-3117.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | 247 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 3 | Single | 1.67kW | 1 | FET General Purpose Power | R-PSIP-T3 | 230A | 20V | DRAIN | SWITCHING | 1670W Tc | 630A | 0.0075Ohm | 3000 mJ | 200V | N-Channel | 28000pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 230A Tc | 378nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk80n50p-datasheets-2108.pdf | 500V | 80A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 65MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | 27ns | 16 ns | 70 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 200A | 500V | N-Channel | 12700pF @ 25V | 65m Ω @ 40A, 10V | 5V @ 8mA | 80A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR140N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixfr140n30p-datasheets-2110.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 2.5kV | 30ns | 20 ns | 100 ns | 82A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 70A | 0.026Ohm | 5000 mJ | 300V | N-Channel | 14800pF @ 25V | 26m Ω @ 70A, 10V | 5V @ 8mA | 70A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/microchiptechnology-2n6661-datasheets-2112.pdf | TO-205AD, TO-39-3 Metal Can | 6.604mm | 14 Weeks | 3 | Gold | 1 | Single | 6.25W | 150°C | TO-39 | 50pF | 10 ns | 10 ns | 350mA | 20V | 90V | 800mV | 6.25W Tc | 4Ohm | 90V | N-Channel | 50pF @ 24V | 4Ohm @ 1A, 10V | 2V @ 1mA | 350mA Tj | 4 Ω | 5V 10V | ±20V |
