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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STW45NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw45nm60-datasheets-1930.pdf | 600V | 45A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | 9.071847g | No SVHC | 110mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW45N | 3 | Single | 417W | 1 | FET General Purpose Power | 30 ns | 20ns | 23 ns | 45A | 30V | SILICON | SWITCHING | 650V | 4V | 417W Tc | TO-247AC | 850 mJ | 600V | N-Channel | 3800pF @ 25V | 110m Ω @ 22.5A, 10V | 5V @ 250μA | 45A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTP76P10T | IXYS | $4.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta76p10t-datasheets-1624.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 298W | 1 | Other Transistors | R-PSFM-T3 | 40ns | 20 ns | 52 ns | 76A | 20V | SILICON | DRAIN | SWITCHING | 100V | 298W Tc | TO-220AB | 230A | 0.024Ohm | -100V | P-Channel | 13700pF @ 25V | 25m Ω @ 500mA, 10V | 4V @ 250μA | 76A Tc | 197nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||
| IXTH48P20P | IXYS | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth48p20p-datasheets-1938.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 462W Tc | TO-247AD | 144A | 0.085Ohm | 2500 mJ | P-Channel | 5400pF @ 25V | 85m Ω @ 500mA, 10V | 4.5V @ 250μA | 48A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STW72N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw72n60dm2ag-datasheets-1940.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW72N | NOT SPECIFIED | 66A | 600V | 446W Tc | N-Channel | 5508pF @ 100V | 42m Ω @ 33A, 10V | 5V @ 250μA | 66A Tc | 121nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW34NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw34nm60n-datasheets-1944.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 105MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | 225 | STW34N | 3 | Single | 210W | 1 | FET General Purpose Power | 17 ns | 34ns | 70 ns | 106 ns | 29A | 25V | SILICON | SWITCHING | 600V | 600V | 3V | 250W Tc | N-Channel | 2722pF @ 100V | 105m Ω @ 14.5A, 10V | 4V @ 250μA | 29A Tc | 80nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| IPW60R031CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipw60r031cfd7xksa1-datasheets-1949.pdf | TO-247-3 | 25.4mm | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 278W | 1 | 150°C | R-PSFM-T3 | 48 ns | 175 ns | 63A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 278W Tc | 277A | 326 mJ | 600V | N-Channel | 5623pF @ 400V | 31m Ω @ 32.6A, 10V | 4.5V @ 1.63mA | 63A Tc | 141nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPH3208PS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Cascode Gallium Nitride FET) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3208ps-datasheets-1953.pdf | TO-220-3 | 12 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 650V | 96W Tc | N-Channel | 760pF @ 400V | 130m Ω @ 13A, 8V | 2.6V @ 300μA | 20A Tc | 14nC @ 8V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/ixys-ixfh80n65x2-datasheets-1959.pdf | TO-247-3 | 3 | 19 Weeks | EAR99 | AVALANCHE RATED | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 890W Tc | 160A | 0.038Ohm | 3000 mJ | N-Channel | 8245pF @ 25V | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 80A Tc | 143nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SPW47N60C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw47n60c3fksa1-datasheets-1962.pdf | TO-247-3 | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 415W Tc | TO-247AC | 47A | 141A | 0.07Ohm | 1800 mJ | N-Channel | 6800pF @ 25V | 70m Ω @ 30A, 10V | 3.9V @ 2.7mA | 47A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP60R040C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipp60r040c7xksa1-datasheets-1967.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 50A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 227W Tc | TO-220AB | 211A | 0.04Ohm | 249 mJ | N-Channel | 4340pF @ 400V | 40m Ω @ 24.9A, 10V | 4V @ 1.24mA | 50A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STW70N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw70n60dm2-datasheets-1972.pdf | TO-247-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW70N | NOT SPECIFIED | 66A | 600V | 4V | 446W Tc | N-Channel | 5508pF @ 100V | 42m Ω @ 33A, 10V | 5V @ 250μA | 66A Tc | 121nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT012N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipt012n08n5atma1-datasheets-1137.pdf | 8-PowerSFN | 2.4mm | Contains Lead | 2 | 18 Weeks | No SVHC | 8 | yes | EAR99 | PG-HSOF-8 | not_compliant | e3 | Tin (Sn) | Halogen Free | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-F2 | 35 ns | 31ns | 30 ns | 82 ns | 300A | 20V | 80V | SILICON | DRAIN | SWITCHING | 3V | 375W Tc | 52A | 80V | N-Channel | 17000pF @ 40V | 1.2m Ω @ 150A, 10V | 3.8V @ 280μA | 300A Tc | 223nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| FCH041N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch041n60f-datasheets-1900.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 15 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | Single | 595W | 1 | FET General Purpose Power | 63 ns | 66ns | 53 ns | 244 ns | 76A | 20V | SILICON | SWITCHING | 595W Tc | TO-247AB | 228A | 2025 mJ | 600V | N-Channel | 14365pF @ 100V | 41m Ω @ 38A, 10V | 5V @ 250μA | 76A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF200P222 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf200p222-datasheets-1913.pdf | TO-247-3 | 24.99mm | 3 | 26 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 556W | 1 | 175°C | R-PSFM-T3 | 25 ns | 77 ns | 182A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 556W Tc | TO-247AC | 728A | 0.0066Ohm | 200V | N-Channel | 9820pF @ 50V | 6.6m Ω @ 82A, 10V | 4V @ 270μA | 182A Tc | 203nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH58N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 58A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 40mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 260 | 3 | Single | 10 | 300W | 1 | FET General Purpose Power | 15ns | 16 ns | 72 ns | 58A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 200 ns | 200V | N-Channel | 4400pF @ 25V | 4 V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STF12N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf12n120k5-datasheets-1926.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF12 | NOT SPECIFIED | 12A | 1200V | 40W Tc | N-Channel | 1370pF @ 100V | 690m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 44.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK1835-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/renesaselectronicsamerica-2sk1835e-datasheets-1817.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | Copper, Tin | No | SINGLE | 4 | 1 | FET General Purpose Power | 25 ns | 80ns | 80 ns | 230 ns | 4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 125W Tc | 4A | 7Ohm | N-Channel | 1700pF @ 10V | 7 Ω @ 2A, 15V | 4A Ta | 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFA80N25X3 | IXYS | $8.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfp80n25x3-datasheets-1727.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT2450KEC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohm-sct2450kec-datasheets-2968.pdf | TO-247-3 | 15.9mm | 5.03mm | 20.95mm | Lead Free | 3 | 19 Weeks | No SVHC | 585mOhm | 3 | No | Single | 1 | 19 ns | 17ns | 34 ns | 38 ns | 10A | 22V | SWITCHING | 1200V | 4V | 85W Tc | 25A | 1.2kV | N-Channel | 463pF @ 800V | 4 V | 585m Ω @ 3A, 18V | 4V @ 900μA | 10A Tc | 27nC @ 18V | 18V | +22V, -6V | |||||||||||||||||||||||||||||||||||||||||
| STW58N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw58n60dm2ag-datasheets-1848.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW58N | NOT SPECIFIED | 50A | 600V | 360W Tc | N-Channel | 4100pF @ 100V | 60m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 90nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH50N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 50A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 15ns | 16 ns | 72 ns | 50A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 200 ns | 200A | 200V | N-Channel | 4400pF @ 25V | 4 V | 45m Ω @ 25A, 10V | 4V @ 4mA | 50A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| STW12N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw12n120k5-datasheets-1855.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | SINGLE | STW12N | 3 | 250W | 1 | FET General Purpose Powers | R-PSFM-T3 | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 250W Tc | 48A | 0.69Ohm | N-Channel | 1370pF @ 100V | 690m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 44.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STW56N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw56n60dm2-datasheets-1859.pdf | TO-247-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STW56N | 50A | 600V | 4V | 360W Tc | N-Channel | 4100pF @ 100V | 60m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 90nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW13NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13nk100z-datasheets-1865.pdf | 1kV | 13A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 700mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW13N | 3 | Single | 350W | 1 | FET General Purpose Power | 45 ns | 35ns | 45 ns | 145 ns | 13A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 350W Tc | TO-247AC | 52A | 700 mJ | 1kV | N-Channel | 6000pF @ 25V | 700m Ω @ 6.5A, 10V | 4.5V @ 150μA | 13A Tc | 266nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IPW60R070CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r070cfd7xksa1-datasheets-1871.pdf | TO-247-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 156W Tc | 31A | 129A | 0.07Ohm | 151 mJ | N-Channel | 2721pF @ 400V | 70m Ω @ 15.1A, 10V | 4.5V @ 760μA | 31A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF100P218XKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-irf100p218xkma1-datasheets-1885.pdf | TO-247-3 | 24.99mm | 18 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.8W | 175°C | 50 ns | 170 ns | 209A | 20V | 556W Tc | 100V | N-Channel | 25000pF @ 50V | 1.28m Ω @ 100A, 10V | 3.8V @ 278μA | 209A Tc | 555nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW11NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw11nk100z-datasheets-1772.pdf | 1kV | 8.3A | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 1.38Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | STW11N | 3 | 1 | Single | 230W | 1 | FET General Purpose Power | 150°C | 27 ns | 18ns | 55 ns | 98 ns | 8.3A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 230W Tc | TO-247AC | 9A | 550 mJ | 1kV | N-Channel | 3500pF @ 25V | 1.38 Ω @ 4.15A, 10V | 4.5V @ 100μA | 8.3A Tc | 162nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IRFP90N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfp90n20dpbf-datasheets-1778.pdf | 200V | 94A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 23mOhm | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 250 | 1 | Single | 30 | 580W | 1 | FET General Purpose Power | 23 ns | 160ns | 79 ns | 43 ns | 94A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5V | 580W Tc | TO-247AC | 340 ns | 90A | 200V | N-Channel | 6040pF @ 25V | 5 V | 23m Ω @ 56A, 10V | 5V @ 250μA | 94A Tc | 270nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| STP8N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp8n120k5-datasheets-1790.pdf | TO-220-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | STP8N | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 130W Tc | TO-220AB | 6A | 12A | 2Ohm | 415 mJ | N-Channel | 505pF @ 100V | 2 Ω @ 2.5A, 10V | 5V @ 100μA | 6A Tc | 13.7nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4868PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfp4868pbf-datasheets-1793.pdf | TO-247-3 | 15.87mm | 24.99mm | 5.31mm | Lead Free | 3 | 12 Weeks | No SVHC | 32MOhm | 3 | EAR99 | No | 1 | Single | 517W | 1 | FET General Purpose Power | 175°C | 24 ns | 16ns | 45 ns | 62 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 3V | 517W Tc | TO-247AC | 351 ns | 280A | 300V | N-Channel | 10774pF @ 50V | 32m Ω @ 42A, 10V | 5V @ 250μA | 70A Tc | 270nC @ 10V | 10V | ±20V |
