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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TP65H035WS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Cascode Gallium Nitride FET) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/transphorm-tp65h035ws-datasheets-2134.pdf | TO-247-3 | 12 Weeks | 650V | 156W Tc | N-Channel | 1500pF @ 400V | 41m Ω @ 30A, 10V | 4.8V @ 1mA | 46.5A Tc | 36nC @ 10V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH30N60L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixth30n60l2-datasheets-3094.pdf | TO-247-3 | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 123 ns | 30A | SILICON | DRAIN | SWITCHING | 2.5V | 540W Tc | 80A | 0.24Ohm | 2000 mJ | 600V | N-Channel | 10700pF @ 25V | 2.5 V | 240m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 335nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SCT3080KLGC11 | ROHM Semiconductor | $14.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | TO-247-3 | 25.5mm | Lead Free | 3 | 21 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 165W | 1 | 175°C | R-PSFM-T3 | 15 ns | 29 ns | 31A | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 165W Tc | 77A | 1.2kV | N-Channel | 785pF @ 800V | 104m Ω @ 10A, 18V | 5.6V @ 5mA | 31A Tc | 60nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTK90P20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk90p20p-datasheets-2159.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 890W | 1 | Other Transistors | R-PSFM-T3 | 90A | 20V | SILICON | DRAIN | SWITCHING | 200V | 890W Tc | 270A | 0.044Ohm | 3500 mJ | -200V | P-Channel | 12000pF @ 25V | 44m Ω @ 500mA, 10V | 4V @ 1mA | 90A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN360N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn360n10t-datasheets-3102.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 2.6MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | NICKEL | UPPER | UNSPECIFIED | 4 | Single | 830W | 1 | FET General Purpose Power | 100ns | 160 ns | 80 ns | 360A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 830W Tc | 900A | 2000 mJ | N-Channel | 36000pF @ 25V | 2.6m Ω @ 180A, 10V | 4.5V @ 250μA | 360A Tc | 505nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH13N80 | IXYS | $13.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf | 800V | 13A | TO-247-3 | Lead Free | 3 | 8 Weeks | 800mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 250 ns | 52A | 800V | N-Channel | 4200pF @ 25V | 800m Ω @ 500mA, 10V | 4.5V @ 4mA | 13A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STW88N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw88n65m5-datasheets-2088.pdf | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 17 Weeks | No SVHC | 24mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW88N | 3 | 1 | Single | 450W | 1 | FET General Purpose Power | 150°C | 141 ns | 141 ns | 84A | 25V | SILICON | DRAIN | SWITCHING | 4V | 450W Tc | 2000 mJ | 650V | N-Channel | 8825pF @ 100V | 4 V | 29m Ω @ 42A, 10V | 5V @ 250μA | 84A Tc | 204nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IXFK150N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n30x3-datasheets-2094.pdf | TO-264-3, TO-264AA | 3 | 19 Weeks | AVALANCHE RATED | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 890W Tc | 150A | 400A | 0.0083Ohm | 2000 mJ | N-Channel | 13.1nF @ 25V | 8.3m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 254nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3212PS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Cascode Gallium Nitride FET) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3212ps-datasheets-2097.pdf | TO-220-3 | 12 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 650V | 104W Tc | N-Channel | 1130pF @ 400V | 72m Ω @ 17A, 8V | 2.6V @ 400uA | 27A Tc | 14nC @ 8V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP65H050WS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Cascode Gallium Nitride FET) | RoHS Compliant | /files/transphorm-tp65h050ws-datasheets-2104.pdf | TO-247-3 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 650V | 119W Tc | N-Channel | 1000pF @ 400V | 60m Ω @ 22A, 10V | 4.8V @ 700μA | 34A Tc | 24nC @ 10V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk80n50p-datasheets-2108.pdf | 500V | 80A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 65MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | 27ns | 16 ns | 70 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 200A | 500V | N-Channel | 12700pF @ 25V | 65m Ω @ 40A, 10V | 5V @ 8mA | 80A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFR140N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixfr140n30p-datasheets-2110.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 2.5kV | 30ns | 20 ns | 100 ns | 82A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 70A | 0.026Ohm | 5000 mJ | 300V | N-Channel | 14800pF @ 25V | 26m Ω @ 70A, 10V | 5V @ 8mA | 70A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPH3206PSB | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206psb-datasheets-2043.pdf | TO-220-3 | 12 Weeks | unknown | NOT SPECIFIED | NOT SPECIFIED | 650V | 81W Tc | N-Channel | 720pF @ 480V | 180m Ω @ 10A, 8V | 2.6V @ 500μA | 16A Tc | 6.2nC @ 4.5V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH75N10 | IXYS | $6.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh75n10-datasheets-2049.pdf | 100V | 75A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 20MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 60ns | 60 ns | 80 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 100V | N-Channel | 4500pF @ 25V | 4 V | 20m Ω @ 37.5A, 10V | 4V @ 4mA | 75A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK90N20 | IXYS | $91.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | 200V | 90A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | No SVHC | 20mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 80ns | 30 ns | 75 ns | 90A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 500W Tc | 200V | N-Channel | 9000pF @ 25V | 4 V | 23m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPW60R037P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipw60r037p7xksa1-datasheets-2055.pdf | TO-247-3 | 25.4mm | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 255W | 1 | 150°C | R-PSFM-T3 | 22 ns | 90 ns | 76A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 255W Tc | 280A | 0.037Ohm | 295 mJ | 600V | N-Channel | 5243pF @ 400V | 37m Ω @ 29.5A, 10V | 4V @ 1.48mA | 76A Tc | 121nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH15N80Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh15n80q-datasheets-2059.pdf | 800V | 15A | TO-247-3 | Lead Free | 3 | 8 Weeks | 600mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 16 ns | 53 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 250 ns | 60A | 1000 mJ | 800V | N-Channel | 4300pF @ 25V | 600m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK160N30T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk160n30t-datasheets-3051.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 1390W Tc | 440A | 0.019Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 19m Ω @ 60A, 10V | 5V @ 8mA | 160A Tc | 335nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFP460PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/vishaysiliconix-irfp460pbf-datasheets-2064.pdf | 500V | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 270MOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 4.2nF | 18 ns | 59ns | 58 ns | 110 ns | 20A | 20V | 500V | 4V | 280W Tc | 860 ns | 270mOhm | 500V | N-Channel | 4200pF @ 25V | 4 V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 210nC @ 10V | 270 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TP90H180PS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Cascode Gallium Nitride FET) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/transphorm-tp90h180ps-datasheets-2071.pdf | TO-220-3 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 900V | 78W Tc | N-Channel | 780pF @ 600V | 205m Ω @ 10A, 10V | 2.6V @ 500μA | 15A Tc | 10nC @ 8V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT40N50L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt40n50l2-datasheets-3067.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 540W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 540W Tc | 80A | 2000 mJ | N-Channel | 10400pF @ 25V | 2.5 V | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 40A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFX48N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfx48n50q-datasheets-2086.pdf | TO-247-3 | Lead Free | 3 | 10 Weeks | 100MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | 22ns | 10 ns | 75 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 100m Ω @ 24A, 10V | 4V @ 4mA | 48A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTK180N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtk180n15p-datasheets-2001.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | No SVHC | 10MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 800W | 1 | FET General Purpose Power | Not Qualified | 32ns | 36 ns | 150 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 150V | 5V | 800W Tc | 4000 mJ | 100V | N-Channel | 7000pF @ 25V | 10m Ω @ 90A, 10V | 5V @ 500μA | 180A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SCT2160KEC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohm-sct2160kec-datasheets-3036.pdf | TO-247-3 | 15.9mm | 5.03mm | 20.95mm | Lead Free | 3 | 19 Weeks | No SVHC | 160mOhm | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 23 ns | 25ns | 27 ns | 67 ns | 22A | 4V | SWITCHING | 1200V | 4V | 165W Tc | 55A | 1.2kV | N-Channel | 1200pF @ 800V | 4 V | 208m Ω @ 7A, 18V | 4V @ 2.5mA | 22A Tc | 62nC @ 18V | 18V | +22V, -6V | |||||||||||||||||||||||||||||||||||||||||||
| NTHL080N120SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/onsemiconductor-nthl080n120sc1-datasheets-2028.pdf | TO-247-3 | 10 Weeks | yes | not_compliant | e3 | Tin (Sn) | 1200V | 348W Tc | N-Channel | 1670pF @ 800V | 110m Ω @ 20A, 20V | 4.3V @ 5mA | 44A Tc | 56nC @ 20V | 20V | +25V, -15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3206LSB | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206lsb-datasheets-2033.pdf | 3-PowerDFN | unknown | NOT SPECIFIED | NOT SPECIFIED | 650V | 81W Tc | N-Channel | 720pF @ 480V | 180m Ω @ 10A, 8V | 2.6V @ 500μA | 16A Tc | 6.2nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1F520N075T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f520n075t2-datasheets-2041.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | Lead Free | 21 | 30 Weeks | 21 | yes | EAR99 | AVALANCHE RATED | No | MMIX1F520N075T2 | DUAL | GULL WING | 21 | 1 | Single | 830W | 1 | FET General Purpose Power | 175°C | 48 ns | 80 ns | 500A | 20V | SILICON | ISOLATED | SWITCHING | 830W Tc | 3000 mJ | 75V | N-Channel | 41000pF @ 25V | 1.6m Ω @ 100A, 10V | 5V @ 8mA | 500A Tc | 545nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STW72N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw72n60dm2ag-datasheets-1940.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW72N | NOT SPECIFIED | 66A | 600V | 446W Tc | N-Channel | 5508pF @ 100V | 42m Ω @ 33A, 10V | 5V @ 250μA | 66A Tc | 121nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW34NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw34nm60n-datasheets-1944.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 105MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | 225 | STW34N | 3 | Single | 210W | 1 | FET General Purpose Power | 17 ns | 34ns | 70 ns | 106 ns | 29A | 25V | SILICON | SWITCHING | 600V | 600V | 3V | 250W Tc | N-Channel | 2722pF @ 100V | 105m Ω @ 14.5A, 10V | 4V @ 250μA | 29A Tc | 80nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IPW60R031CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipw60r031cfd7xksa1-datasheets-1949.pdf | TO-247-3 | 25.4mm | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 278W | 1 | 150°C | R-PSFM-T3 | 48 ns | 175 ns | 63A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 278W Tc | 277A | 326 mJ | 600V | N-Channel | 5623pF @ 400V | 31m Ω @ 32.6A, 10V | 4.5V @ 1.63mA | 63A Tc | 141nC @ 10V | 10V | ±20V |
