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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHB33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb33n60ege3-datasheets-1747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 3 | yes | No | GULL WING | 1 | Single | 1 | FET General Purpose Powers | R-PSSO-G2 | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 278W Tc | 88A | 0.099Ohm | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTH96P085T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixth96p085t-datasheets-1752.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 96A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 298W Tc | TO-247AD | 1000 mJ | P-Channel | 13100pF @ 25V | 13m Ω @ 500mA, 10V | 4V @ 250μA | 96A Tc | 180nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1N200P3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n200p3hv-datasheets-1754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1A | 2000V | 125W Tc | N-Channel | 646pF @ 25V | 40 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 23.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH072N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch072n60f-datasheets-1756.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 481W | 1 | FET General Purpose Power | 43 ns | 38ns | 25 ns | 140 ns | 52A | 20V | SILICON | SWITCHING | 481W Tc | TO-247AB | 156A | 0.072Ohm | 1128 mJ | 600V | N-Channel | 8660pF @ 100V | 72m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 215nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STW11NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw11nk100z-datasheets-1772.pdf | 1kV | 8.3A | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 1.38Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | STW11N | 3 | 1 | Single | 230W | 1 | FET General Purpose Power | 150°C | 27 ns | 18ns | 55 ns | 98 ns | 8.3A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 230W Tc | TO-247AC | 9A | 550 mJ | 1kV | N-Channel | 3500pF @ 25V | 1.38 Ω @ 4.15A, 10V | 4.5V @ 100μA | 8.3A Tc | 162nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRFP90N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfp90n20dpbf-datasheets-1778.pdf | 200V | 94A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 23mOhm | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 250 | 1 | Single | 30 | 580W | 1 | FET General Purpose Power | 23 ns | 160ns | 79 ns | 43 ns | 94A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5V | 580W Tc | TO-247AC | 340 ns | 90A | 200V | N-Channel | 6040pF @ 25V | 5 V | 23m Ω @ 56A, 10V | 5V @ 250μA | 94A Tc | 270nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STP8N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp8n120k5-datasheets-1790.pdf | TO-220-3 | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | STP8N | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 130W Tc | TO-220AB | 6A | 12A | 2Ohm | 415 mJ | N-Channel | 505pF @ 100V | 2 Ω @ 2.5A, 10V | 5V @ 100μA | 6A Tc | 13.7nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4868PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfp4868pbf-datasheets-1793.pdf | TO-247-3 | 15.87mm | 24.99mm | 5.31mm | Lead Free | 3 | 12 Weeks | No SVHC | 32MOhm | 3 | EAR99 | No | 1 | Single | 517W | 1 | FET General Purpose Power | 175°C | 24 ns | 16ns | 45 ns | 62 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 3V | 517W Tc | TO-247AC | 351 ns | 280A | 300V | N-Channel | 10774pF @ 50V | 32m Ω @ 42A, 10V | 5V @ 250μA | 70A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCA47N60-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fca47n60f109-datasheets-1803.pdf | TO-3P-3, SC-65-3 | Lead Free | 13 Weeks | 6.401g | 70MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | No | Single | 417W | FET General Purpose Power | 185 ns | 210ns | 75 ns | 520 ns | 47A | 30V | 417W Tc | 600V | N-Channel | 8000pF @ 25V | 70m Ω @ 23.5A, 10V | 5V @ 250μA | 47A Tc | 270nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW26NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw26nm60n-datasheets-1811.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW26N | 3 | Single | 140W | 1 | FET General Purpose Power | 13 ns | 25ns | 50 ns | 85 ns | 20A | 25V | SILICON | SWITCHING | 3V | 140W Tc | 80A | 600V | N-Channel | 1800pF @ 50V | 165m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPP110N20NAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptimWatt™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb107n20naatma1-datasheets-1382.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | Not Qualified | 18 ns | 26ns | 11 ns | 41 ns | 88A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 560 mJ | N-Channel | 7100pF @ 100V | 10.7m Ω @ 88A, 10V | 4V @ 270μA | 88A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA60R099C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r099c6xksa1-datasheets-1717.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 35W | 1 | 15 ns | 12ns | 6 ns | 75 ns | 37.9A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 0.099Ohm | 796 mJ | N-Channel | 2660pF @ 100V | 99m Ω @ 18.1A, 10V | 3.5V @ 1.21mA | 37.9A Tc | 119nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8409-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs84097p-datasheets-1602.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | Lead Free | 13 Weeks | No SVHC | 7 | EAR99 | No | IRFS8409 | 1 | Single | 375W | FET General Purpose Power | 32 ns | 148ns | 107 ns | 149 ns | 240A | 20V | 3V | 375W Tc | 40V | N-Channel | 13975pF @ 25V | 3 V | 0.75m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 460nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDP036N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdp036n10a-datasheets-1609.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3.6MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | FET General Purpose Power | Not Qualified | 22 ns | 54ns | 11 ns | 37 ns | 214A | 20V | SILICON | DRAIN | SWITCHING | 333W Tc | TO-220AB | 704A | 658 mJ | 100V | N-Channel | 7295pF @ 25V | 3 V | 3.6m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 116nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA76P10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta76p10t-datasheets-1624.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | SINGLE | GULL WING | 4 | 298W | 1 | Other Transistors | R-PSSO-G2 | 76A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 298W Tc | 0.024Ohm | P-Channel | 13700pF @ 25V | 25m Ω @ 500mA, 10V | 4V @ 250μA | 76A Tc | 197nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP24N60M2 | STMicroelectronics | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp24n60m2-datasheets-1626.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | 190MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP24N | Single | 150W | 1 | 14 ns | 9ns | 61 ns | 15 ns | 18A | 25V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 72A | 180 mJ | 600V | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| AOT27S60L | Alpha & Omega Semiconductor Inc. | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | No | 357W | 1 | TO-220 | 1.294nF | 27A | 30V | 600V | 357W Tc | N-Channel | 1294pF @ 100V | 160mOhm @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 26nC @ 10V | 160 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2024 | EPC | $7.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2024-datasheets-1632.pdf | Die | 12 Weeks | Die | 2.1nF | 60A | 40V | N-Channel | 2100pF @ 20V | 1.5mOhm @ 37A, 5V | 2.5V @ 19mA | 60A Ta | 1.5 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH200N10T | IXYS | $1.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth200n10t-datasheets-1667.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 5.5MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 31ns | 34 ns | 45 ns | 200A | SILICON | DRAIN | SWITCHING | 550W Tc | 500A | 1500 mJ | 100V | N-Channel | 9400pF @ 25V | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SCT3120ALGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-sct3120algc11-datasheets-1669.pdf | TO-247-3 | 25.5mm | Lead Free | 3 | 30 Weeks | yes | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 103W | 1 | 175°C | R-PSFM-T3 | 14 ns | 23 ns | 21A | SINGLE WITH BUILT-IN DIODE | SWITCHING | 103W Tc | 52A | 650V | N-Channel | 460pF @ 500V | 156m Ω @ 6.7A, 18V | 5.6V @ 3.33mA | 21A Tc | 38nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA6N50D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50d2-datasheets-1686.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | 3 | yes | UL RECOGNIZED | No | SINGLE | GULL WING | 3 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP20NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20nm60-datasheets-1689.pdf | 650V | 20A | TO-220-3 | Lead Free | 3 | 16 Weeks | No SVHC | 290mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP20N | 3 | Single | 192W | 1 | FET General Purpose Power | 25 ns | 20ns | 11 ns | 42 ns | 20A | 30V | SILICON | SWITCHING | 4V | 192W Tc | TO-220AB | 80A | 650 mJ | 600V | N-Channel | 1500pF @ 25V | 4 V | 290m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SPW20N60C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw20n60c3fksa1-datasheets-1694.pdf | TO-247-3 | 3 | 40 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 208W Tc | TO-247AD | 20.7A | 62.1A | 0.19Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP140P05T | IXYS | $3.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp140p05t-datasheets-1699.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 298W Tc | TO-220AB | 420A | 0.009Ohm | 1000 mJ | P-Channel | 13500pF @ 25V | 9m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 200nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFP4468PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp4468pbf-datasheets-1701.pdf | TO-247-3 | 15.87mm | 24.99mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 2.6MOhm | 3 | EAR99 | Tin | e3 | 250 | 1 | Single | 30 | 520W | 1 | FET General Purpose Power | Not Qualified | 175°C | 52 ns | 230ns | 260 ns | 160 ns | 290A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 520W Tc | TO-247AC | 740 mJ | 100V | N-Channel | 19860pF @ 50V | 4 V | 2.6m Ω @ 180A, 10V | 4V @ 250μA | 195A Tc | 540nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFP4310ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp4310zpbf-datasheets-1577.pdf&product=infineontechnologies-irfp4310zpbf-6380961 | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 6MOhm | 3 | EAR99 | No | Single | 280W | 1 | FET General Purpose Power | 20 ns | 60ns | 57 ns | 55 ns | 134A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 280W Tc | TO-247AC | 40 ns | 560A | 100V | N-Channel | 6860pF @ 50V | 4 V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFSA8409-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-auirfsa84097p-datasheets-1587.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 15 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 523A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 375W Tc | 360A | 1440A | 0.00069Ohm | 1450 mJ | N-Channel | 13975pF @ 25V | 0.69m Ω @ 100A, 10V | 3.9V @ 250μA | 523A Tc | 460nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP26P20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp26p20p-datasheets-1592.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 170MOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | Other Transistors | R-PSFM-T3 | 33ns | 21 ns | 46 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | TO-220AB | 70A | -200V | P-Channel | 2740pF @ 25V | 170m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP030N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp030n10n3gxksa1-datasheets-1496.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | Not Qualified | 34 ns | 58ns | 28 ns | 84 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | N-Channel | 14800pF @ 50V | 3m Ω @ 100A, 10V | 3.5V @ 275μA | 100A Tc | 206nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| EPC2033 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2033-datasheets-1502.pdf | Die | 12 Weeks | Die | 150V | N-Channel | 1140pF @ 75V | 7mOhm @ 25A, 5V | 2.5V @ 9mA | 31A Ta | 10nC @ 5V |
