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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPI80P04P4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p04p4l04aksa1-datasheets-1767.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 28 ns | 13ns | 65 ns | 119 ns | 80A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 125W Tc | 0.0071Ohm | 60 mJ | P-Channel | 3800pF @ 25V | 4.7m Ω @ 80A, 10V | 2.2V @ 250μA | 80A Tc | 176nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||
| IPI80P04P4L06AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p04p4l06aksa1-datasheets-1772.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 17 ns | 12ns | 44 ns | 61 ns | 80A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 88W Tc | 0.0067Ohm | P-Channel | 6580pF @ 25V | 6.7m Ω @ 80A, 10V | 2.2V @ 150μA | 80A Tc | 104nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||
| AOT416L | Alpha & Omega Semiconductor Inc. | $27.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | TO-220-3 | 1.45nF | 42A | 100V | 1.92W Ta 150W Tc | N-Channel | 1450pF @ 50V | 37mOhm @ 20A, 10V | 4V @ 250μA | 4.7A Ta 42A Tc | 23nC @ 10V | 37 mΩ | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7526 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6404A_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 5.21nF | 85A | 30V | 2.3W Ta 83W Tc | N-Channel | 5210pF @ 15V | 2.3mOhm @ 20A, 10V | 2V @ 250μA | 25A Ta 85A Tc | 40nC @ 10V | 2.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL716SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl716snh6327xtsa1-datasheets-1779.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 2.5A | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | 10A | 0.15Ohm | 33 mJ | N-Channel | 315pF @ 25V | 150m Ω @ 2.5A, 10V | 1.8V @ 218μA | 2.5A Ta | 13.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AO4407B | Alpha & Omega Semiconductor Inc. | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 30V | 3.1W Ta | P-Channel | 2600pF @ 15V | 13mOhm @ 12A, 20V | 2.8V @ 250μA | 12A Ta | 36nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R650CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r650ceatma1-datasheets-1731.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3.949996g | yes | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 10.1A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 86W Tc | 0.65Ohm | 650V | N-Channel | 440pF @ 100V | 650m Ω @ 2.1A, 10V | 3.5V @ 0.21mA | 10.1A Tc | 23nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPI120P04P4L03AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi120p04p4l03aksa1-datasheets-1735.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 136W | 1 | 21 ns | 16ns | 57 ns | 85 ns | 120A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 136W Tc | 480A | 0.0052Ohm | 78 mJ | P-Channel | 15000pF @ 25V | 3.4m Ω @ 100A, 10V | 2.2V @ 340μA | 120A Tc | 234nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
| IPC60N04S4L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc60n04s4l06atma1-datasheets-1740.pdf | 8-PowerVDFN | Contains Lead | 3 | 17 Weeks | 8 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 60A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | 240A | 0.0079Ohm | 120 mJ | N-Channel | 3600pF @ 25V | 5.6m Ω @ 30A, 10V | 2.2V @ 30μA | 60A Tc | 43nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| IPI80P04P405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p04p405aksa1-datasheets-1744.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 42 ns | 24ns | 65 ns | 73 ns | 80A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 125W Tc | 0.0052Ohm | 64 mJ | P-Channel | 10300pF @ 25V | 5.2m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 151nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPI80P04P407AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p04p407aksa1-datasheets-1749.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 88W | 1 | 25 ns | 15ns | 41 ns | 34 ns | 80A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 88W Tc | 0.0077Ohm | P-Channel | 6085pF @ 25V | 7.7m Ω @ 80A, 10V | 4V @ 150μA | 80A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPI084N06L3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi084n06l3gxksa1-datasheets-1754.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 15 ns | 37 ns | 50A | 20V | 60V | SILICON | SWITCHING | 79W Tc | 200A | 0.0084Ohm | 60V | N-Channel | 4900pF @ 30V | 8.4m Ω @ 50A, 10V | 2.2V @ 34μA | 50A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| IPC60N04S406ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc60n04s406atma1-datasheets-1760.pdf | 8-PowerVDFN | Contains Lead | 3 | 26 Weeks | 8 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 60A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | 240A | 0.006Ohm | 120 mJ | N-Channel | 2650pF @ 25V | 6m Ω @ 30A, 10V | 4V @ 30μA | 60A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| AOI516_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-251-3 Stub Leads, IPak | TO-251B | 1.229nF | 46A | 30V | 2.5W Ta 50W Tc | N-Channel | 1229pF @ 15V | 5mOhm @ 20A, 10V | 2.2V @ 250μA | 18A Ta 46A Tc | 33nC @ 10V | 5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI4144_002 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod4144003-datasheets-1541.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TO-251A | 1.43nF | 55A | 30V | 2.3W Ta 50W Tc | N-Channel | 1430pF @ 15V | 8mOhm @ 20A, 10V | 2.4V @ 250μA | 13A Ta 55A Tc | 28nC @ 10V | 8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6500_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 7.036nF | 200A | 30V | 7.3W Ta 83W Tc | N-Channel | 7036pF @ 15V | 0.95mOhm @ 20A, 10V | 2V @ 250μA | 71A Ta 200A Tc | 145nC @ 10V | 950 μΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP034N03LGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp034n03lgxksa1-datasheets-9817.pdf | TO-220-3 | Lead Free | 94W | 1 | PG-TO220-3-1 | 5.3nF | 9.2 ns | 6.4ns | 5.4 ns | 35 ns | 80A | 20V | 30V | 94W Tc | 3.4mOhm | N-Channel | 5300pF @ 15V | 3.4mOhm @ 30A, 10V | 2.2V @ 250μA | 80A Tc | 25nC @ 4.5V | 3.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AOTF2N60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | TO-220-3F | 325pF | 2A | 600V | 31W Tc | N-Channel | 325pF @ 25V | 4.4Ohm @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 11.4nC @ 10V | 4.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL802SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl802snh6327xtsa1-datasheets-1717.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 30ns | 7.5A | 8V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | 0.022Ohm | 77 pF | N-Channel | 1347pF @ 10V | 22m Ω @ 7.5A, 2.5V | 0.75V @ 30μA | 7.5A Ta | 4.7nC @ 2.5V | 1.8V 2.5V | ±8V | |||||||||||||||||||||||||||||||||
| AON7403L_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerVDFN | 8-DFN (3x3) | 1.4nF | 29A | 30V | 4.1W Ta 25W Tc | P-Channel | 1400pF @ 15V | 18mOhm @ 8A, 10V | 3V @ 250μA | 11A Ta 29A Tc | 24nC @ 15V | 18 mΩ | 5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4476A_104 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 1.38nF | 15A | 30V | 3.1W Ta | N-Channel | 1380pF @ 15V | 7.7mOhm @ 15A, 10V | 2.5V @ 250μA | 15A Ta | 24nC @ 10V | 7.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF10N60_006 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | TO-220-3F | 1.6nF | 10A | 600V | 50W Tc | N-Channel | 1600pF @ 25V | 750mOhm @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 40nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL372SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl372snh6327xtsa1-datasheets-1726.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 2A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | 2A | 8A | 0.22Ohm | 33 mJ | N-Channel | 329pF @ 25V | 220m Ω @ 2A, 10V | 1.8V @ 218μA | 2A Ta | 14.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSL296SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl296snh6327xtsa1-datasheets-1657.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 1.4A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | 5.6A | 0.56Ohm | 15 mJ | N-Channel | 152.7pF @ 25V | 460m Ω @ 1.26A, 10V | 1.8V @ 100μA | 1.4A Ta | 4nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AON7758_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerWDFN | 8 | 8-DFN-EP (3.3x3.3) | 5.2nF | 75A | 30V | 4.2W Ta 34W Tc | N-Channel | 5200pF @ 15V | 1.85mOhm @ 20A, 10V | 2V @ 250μA | 36A Ta 75A Tc | 100nC @ 10V | 1.85 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL373SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl373snh6327xtsa1-datasheets-1670.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 2A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | 2A | 0.23Ohm | 21 pF | N-Channel | 265pF @ 25V | 230m Ω @ 2A, 10V | 4V @ 218μA | 2A Ta | 9.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AOT8N80L_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 | TO-220-3 | 1.65nF | 7.4A | 800V | 245W Tc | N-Channel | 1650pF @ 25V | 1.63Ohm @ 4A, 10V | 4.5V @ 250μA | 7.4A Tc | 32nC @ 10V | 1.63 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R350CPHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r350cpxksa1-datasheets-8096.pdf | TO-220-3 | 3 | 89W | 1 | PG-TO220-3-1 | 1.02nF | 35 ns | 14ns | 12 ns | 80 ns | 10A | 20V | 500V | 89W Tc | N-Channel | 1020pF @ 100V | 350mOhm @ 5.6A, 10V | 3.5V @ 370μA | 10A Tc | 25nC @ 10V | 350 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| CTLDM7120-M621H TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctldm7120m621htr-datasheets-1664.pdf | 6-XFDFN Exposed Pad | 6 Weeks | compliant | YES | FET General Purpose Power | Single | 20V | 1.6W Ta | 1A | N-Channel | 220pF @ 10V | 100m Ω @ 500mA, 4.5V | 1.2V @ 1mA | 1A Ta | 2.4nC @ 4.5V | 1.5V 4.5V | 8V |
