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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AO5401EL | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-ao5401e-datasheets-2456.pdf | SC-89, SOT-490 | 500mA | 20V | 280mW Ta | P-Channel | 100pF @ 10V | 800m Ω @ 500mA, 4.5V | 0.9V @ 250μA | 500mA Ta | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6898 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | TO-204AA, TO-3 | 2 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | 1 | Other Transistors | Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 150W Tc | TO-204AE | 25A | 60A | P-Channel | 3000pF @ 25V | 200m Ω @ 15.8A, 10V | 4V @ 250μA | 25A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 62-0095PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOIC | 20V | 2W | N-Channel | 900pF @ 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250μA | 10A Ta 12A Tc | 11nC @ 4.5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU80R1K4CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r1k4cebtma1-datasheets-7317.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 6 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 3.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 63W Tc | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.4 Ω @ 2.3A, 10V | 3.9V @ 240μA | 3.9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD60R380E6ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r380e6xksa1-datasheets-7737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 3 | Halogen Free | PG-TO252-3 | 700pF | 10.6A | 600V | 600V | 83W Tc | N-Channel | 700pF @ 100V | 380mOhm @ 3.8A, 10V | 3.5V @ 300μA | 10.6A Tc | 32nC @ 10V | Super Junction | 380 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4N60SJ3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg4n60sj3-datasheets-2313.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 8 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3A | 600V | 41W Tc | N-Channel | 532pF @ 25V | 2.5 Ω @ 2A, 10V | 4.5V @ 250μA | 3A Tc | 14.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5820NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvtfs5820nlwftwg-datasheets-7146.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 23 Weeks | No SVHC | 8 | ACTIVE, NOT REC (Last Updated: 15 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 21W | 1 | FET General Purpose Powers | S-PDSO-F5 | 10 ns | 28ns | 22 ns | 19 ns | 11A | 20V | SILICON | DRAIN | 2.3V | 3.2W Ta 21W Tc | 29A | 247A | 60V | N-Channel | 1462pF @ 25V | 11.5m Ω @ 8.7A, 10V | 2.3V @ 250μA | 11A Ta | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| TPH3202PS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3202ps-datasheets-2317.pdf | TO-220-3 | 14 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 600V | 65W Tc | N-Channel | 760pF @ 480V | 350m Ω @ 5.5A, 8V | 2.5V @ 250μA | 9A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB11C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | YES | FET General Purpose Power | Single | 600V | 278W Tc | 11A | N-Channel | 2000pF @ 100V | 440m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80SM120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 22 Weeks | EAR99 | 80A | 1200V | 625W Tc | N-Channel | 55m Ω @ 40A, 20V | 2.5V @ 1mA | 80A Tc | 235nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3206LD | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206ld-datasheets-2326.pdf | 4-PowerDFN | 14 Weeks | yes | unknown | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4N60SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg4n60sct-datasheets-2332.pdf | TO-220-3 | 3 | 7 Weeks | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 113W Ta | TO-220AB | 6A | 90 mJ | N-Channel | 532pF @ 25V | 2.5 Ω @ 2A, 10V | 4.5V @ 250μA | 4.5A Ta | 14.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| TPH3208LD | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3208ldg-datasheets-1325.pdf | 4-PowerDFN | 14 Weeks | yes | unknown | 650V | 96W Tc | N-Channel | 760pF @ 400V | 130m Ω @ 13A, 8V | 2.6V @ 300μA | 20A Tc | 14nC @ 8V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 62-0136PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOIC | 30V | 2.5W | N-Channel | 3710pF @ 15V | 4.5mOhm @ 19A, 10V | 2.25V @ 250μA | 19A Ta | 44nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25SM120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 2009 | D-3 Module | 22 Weeks | EAR99 | YES | FET General Purpose Power | 25A | Single | 1200V | 175W Tc | N-Channel | 175m Ω @ 10A, 20V | 2.5V @ 1mA | 25A Tc | 72nC @ 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R380E6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~155°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r380e6xksa1-datasheets-7737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 11 ns | 9ns | 8 ns | 56 ns | 10.6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 83W Tc | 210 mJ | 650V | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 300μA | 10.6A Tc | 32nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 64-9149PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFP4310Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfp4310z-datasheets-2241.pdf | TO-247-3 | 3 | 19 Weeks | EAR99 | ULTRA LOW RESISTANCE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 128A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 278W Tc | TO-247AC | 120A | 480A | 0.006Ohm | 355 mJ | N-Channel | 7120pF @ 50V | 6m Ω @ 77A, 10V | 4V @ 150μA | 128A Tc | 188nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT25SM120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | 175°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | TO-247-3 | TO-247 | 25A | 1200V | 175W Tc | N-Channel | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 25A Tc | 72nC @ 20V | 175 mΩ | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6B05NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b05nlt1g-datasheets-2224.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 3.8W Ta 165W Tc | 114A | 330A | 125 mJ | N-Channel | 3980pF @ 25V | 5.6m Ω @ 20A, 10V | 3V @ 250μA | 6.8nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| APT70SM70J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Surface Mount | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 22 Weeks | EAR99 | 12 ns | 14ns | 23 ns | 33 ns | 49A | 25V | 700V | 165W Tc | N-Channel | 70m Ω @ 32.5A, 20V | 2.5V @ 1mA | 49A Tc | 125nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDWS5360L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdws5360lf085-datasheets-2250.pdf | 8-PowerTDFN | 2 Weeks | 172.8mg | 8 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | Single | 60A | 60V | 150W Tj | N-Channel | 3695pF @ 30V | 8.5m Ω @ 60A, 10V | 3V @ 250μA | 60A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120N06S403AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n06s403atma2-datasheets-8197.pdf | TO-220-3 | 3 | 6.000006g | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 167W Tc | TO-220AB | 480A | 0.0032Ohm | 392 mJ | N-Channel | 13150pF @ 25V | 3.2m Ω @ 100A, 10V | 4V @ 120μA | 120A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDMS9411L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms9411lf085-datasheets-2176.pdf | 8-PowerTDFN | 10 Weeks | LIFETIME (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 50W Tj | N-Channel | 1210pF @ 20V | 7m Ω @ 30A, 10V | 3V @ 250μA | 30A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6B05NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b05nlt1g-datasheets-2224.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 3.8W Ta 165W Tc | 114A | 330A | 125 mJ | N-Channel | 3980pF @ 25V | 5.6m Ω @ 20A, 10V | 3V @ 250μA | 6.8nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| JANTXV2N6898 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-204AA, TO-3 | 2 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | 1 | Other Transistors | Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 150W Tc | TO-204AE | 25A | 60A | P-Channel | 3000pF @ 25V | 200m Ω @ 15.8A, 10V | 4V @ 250μA | 25A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6B14NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b14nlt1g-datasheets-2036.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 38 Weeks | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 3.8W Ta 94W Tc | 140A | 0.019Ohm | 29 mJ | N-Channel | 1680pF @ 25V | 13m Ω @ 20A, 10V | 3V @ 250μA | 11A Ta 55A Tc | 8nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRFC3306EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80P04P4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipi80p04p4l04aksa1-datasheets-1767.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 28 ns | 13ns | 65 ns | 119 ns | 80A | 16V | -40V | SILICON | 40V | 125W Tc | TO-220AB | 0.0071Ohm | 60 mJ | P-Channel | 3800pF @ 25V | 4.7m Ω @ 80A, 10V | 2.2V @ 250μA | 80A Tc | 176nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||
| IPP70P04P409AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi70p04p409aksa1-datasheets-1860.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 19 ns | 15ns | 31 ns | 24 ns | 72A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 75W Tc | TO-220AB | 288A | 0.0094Ohm | 24 mJ | P-Channel | 4810pF @ 25V | 9.4m Ω @ 70A, 10V | 4V @ 120μA | 72A Tc | 70nC @ 10V | 10V | ±20V |
