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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 5HP01M-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-5hp01mtle-datasheets-7213.pdf | SC-70, SOT-323 | 4 Weeks | 3 | 13 ns | 10ns | 150 ns | 160 ns | 70mA | 20V | 150mW Ta | 50V | P-Channel | 6.2pF @ 10V | 22 Ω @ 40mA, 10V | 70mA Ta | 1.32nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3LN01C-TB-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-3ln01ctbh-datasheets-4075.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | 8541.21.00.95 | e6 | Tin/Bismuth (Sn/Bi) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 250mW | 1 | FET General Purpose Power | 19 ns | 65ns | 120 ns | 155 ns | 150mA | 10V | SILICON | SWITCHING | 30V | 250mW Ta | 0.15A | N-Channel | 7pF @ 10V | 3.7 Ω @ 80mA, 4V | 150mA Ta | 1.58nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||
| IPU60R1K4C6AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu60r1k4c6akma1-datasheets-1936.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 3.2A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 28.4W Tc | 8A | 26 mJ | N-Channel | 200pF @ 100V | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 3.2A Tc | 9.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOD522P | Alpha & Omega Semiconductor Inc. | $1.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod522p-datasheets-1941.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 1.5nF | 46A | 30V | 2.5W Ta 53W Tc | N-Channel | 1500pF @ 15V | 5.2mOhm @ 20A, 10V | 2.4V @ 250μA | 17A Ta 46A Tc | 18nC @ 10V | 5.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S4L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd50n06s4l12atma2-datasheets-0410.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 50W Tc | 50A | 200A | 0.012Ohm | 33 mJ | N-Channel | 2890pF @ 25V | 12m Ω @ 50A, 10V | 2.2V @ 20μA | 50A Tc | 40nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| 3LP01SS-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-3lp01sstlh-datasheets-4138.pdf | SC-81 | 1.4mm | 600μm | 800μm | Lead Free | 4 Weeks | 3 | yes | EAR99 | Tin | e6 | YES | 3 | Single | 150mW | 1 | Other Transistors | 24 ns | 55ns | 130 ns | 120 ns | 100mA | 10V | 30V | 150mW Ta | P-Channel | 7.5pF @ 10V | 10.4 Ω @ 50mA, 4V | 100mA Ta | 1.43nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| IPL60R2K1C6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r2k1c6satma1-datasheets-1954.pdf | 8-PowerTDFN | Contains Lead | 12 Weeks | 75.891673mg | 8 | yes | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 7 ns | 7ns | 50 ns | 30 ns | 2.3A | 30V | 600V | 21.6W Tc | 600V | N-Channel | 140pF @ 100V | 2.1 Ω @ 760mA, 10V | 3.5V @ 60μA | 2.3A Tc | 6.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NDD03N80ZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd03n80z1g-datasheets-7826.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 9 Weeks | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 40 | 96W | 1 | FET General Purpose Powers | R-PSSO-G2 | 9 ns | 7ns | 9 ns | 17 ns | 2.9A | 30V | SILICON | DRAIN | 800V | 800V | 96W Tc | N-Channel | 440pF @ 25V | 4.5 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.9A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IPL65R660E6AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r660e6auma1-datasheets-1962.pdf | 4-PowerTSFN | Contains Lead | 4 | 12 Weeks | 4 | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 63W | 1 | 7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | 0.66Ohm | N-Channel | 440pF @ 100V | 660m Ω @ 2.1A, 10V | 3.5V @ 200μA | 7A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP90N06S404AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi90n06s404aksa1-datasheets-5648.pdf | TO-220-3 | 3 | 6.000006g | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 90A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | TO-220AB | 360A | 0.004Ohm | N-Channel | 10400pF @ 25V | 4m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S402ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc100n04s402atma1-datasheets-1865.pdf | 8-PowerVDFN | Contains Lead | 3 | 25 Weeks | 8 | yes | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 100A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | 400A | 0.0024Ohm | 315 mJ | N-Channel | 8100pF @ 25V | 2.4m Ω @ 50A, 10V | 4V @ 80μA | 100A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP120P04P404AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipp120p04p404aksa1-datasheets-1872.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 30 ns | 20ns | 52 ns | 49 ns | 120A | 20V | -40V | SILICON | DRAIN | 40V | 136W Tc | TO-220AB | 480A | 78 mJ | P-Channel | 14790pF @ 25V | 3.8m Ω @ 100A, 10V | 4V @ 340μA | 120A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP80P04P4L06AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-ipi80p04p4l06aksa1-datasheets-1772.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | Contains Lead | 14 Weeks | 3 | Halogen Free | Single | PG-TO220-3-1 | 5.06nF | 17 ns | 12ns | 44 ns | 61 ns | 80A | 16V | -40V | 40V | 88W Tc | 10.8mOhm | P-Channel | 6580pF @ 25V | 6.7mOhm @ 80A, 10V | 2.2V @ 150μA | 80A Tc | 104nC @ 10V | 6.7 mΩ | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||
| IPP80P04P4L08AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-ipp80p04p4l08aksa1-datasheets-1890.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | Contains Lead | 14 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 12 ns | 11ns | 35 ns | 42 ns | 80A | 16V | -40V | 40V | 75W Tc | P-Channel | 5430pF @ 25V | 8.2m Ω @ 80A, 10V | 2.2V @ 120μA | 80A Tc | 92nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||||
| IPL65R725CFDAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r725cfdauma1-datasheets-1806.pdf | 4-PowerTSFN | Contains Lead | 16 Weeks | 4 | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 2 | NOT SPECIFIED | 9 ns | 8ns | 10 ns | 40 ns | 5.8A | 30V | 650V | 62.5W Tc | 650V | N-Channel | 615pF @ 100V | 725m Ω @ 2.1A, 10V | 4.5V @ 200μA | 5.8A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP65R660CFDAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r660cfdaaksa1-datasheets-1810.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Contains Lead | 3 | 16 Weeks | 3 | no | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 62.5W | 1 | 9 ns | 8ns | 10 ns | 40 ns | 6A | 20V | 650V | SILICON | SWITCHING | 62.5W Tc | TO-220AB | 6A | 0.66Ohm | N-Channel | 543pF @ 100V | 660m Ω @ 3.2A, 10V | 4.5V @ 200μA | 6A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPL65R190E6AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r190e6auma1-datasheets-1818.pdf | 4-PowerTSFN | Contains Lead | 4 | 12 Weeks | 4 | Halogen Free | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 12 ns | 11ns | 10 ns | 112 ns | 20.2A | 20V | 650V | SILICON | DRAIN | SWITCHING | 151W Tc | 66A | 650V | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 700μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPL65R460CFDAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r460cfdauma1-datasheets-1824.pdf | 4-PowerTSFN | Contains Lead | 16 Weeks | 4 | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 2 | NOT SPECIFIED | 83.3W | 1 | 10 ns | 7ns | 8 ns | 38 ns | 8.3A | 20V | 650V | 83.3W Tc | N-Channel | 870pF @ 100V | 460m Ω @ 3.4A, 10V | 4.5V @ 300μA | 8.3A Tc | 31.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPL65R310E6AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r310e6auma1-datasheets-1831.pdf | 4-PowerTSFN | Contains Lead | 4 | 12 Weeks | 4 | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 13.1A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 36A | 0.31Ohm | 290 mJ | N-Channel | 950pF @ 100V | 310m Ω @ 4.4A, 10V | 3.5V @ 400μA | 13.1A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP80P04P407AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p04p407aksa1-datasheets-1749.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 25 ns | 15ns | 41 ns | 34 ns | 80A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 88W Tc | TO-220AB | 0.0077Ohm | P-Channel | 6085pF @ 25V | 7.7m Ω @ 80A, 10V | 4V @ 150μA | 80A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AOD240_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 4.3nF | 70A | 40V | 2.7W Ta 150W Tc | N-Channel | 4300pF @ 20V | 3mOhm @ 20A, 10V | 2.2V @ 250μA | 23A Ta 70A Tc | 60nC @ 10V | 3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT5N50_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 | TO-220-3 | 620pF | 5A | 500V | 104W Tc | N-Channel | 620pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 19nC @ 10V | 1.5 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOU3N60_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 370pF | 2.5A | 600V | 56.8W Tc | N-Channel | 370pF @ 25V | 3.5Ohm @ 1.25A, 10V | 4.5V @ 250μA | 2.5A Tc | 12nC @ 10V | 3.5 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT1350-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/onsemiconductor-sft1350h-datasheets-1848.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 5.5mm | Lead Free | 3 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 3 | Single | 1W | 1 | 8 ns | 40ns | 44 ns | 52 ns | 19A | 20V | 40V | 1W Ta 23W Tc | P-Channel | 590pF @ 20V | 59m Ω @ 9.5A, 10V | 19A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPI80P03P405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80p03p405aksa1-datasheets-1795.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 14 Weeks | 3 | Halogen Free | PG-TO262-3-1 | 10.3nF | 35 ns | 10ns | 20 ns | 70 ns | 80A | 20V | -30V | 30V | 137W Tc | P-Channel | 10300pF @ 25V | 5mOhm @ 80A, 10V | 4V @ 253μA | 80A Tc | 130nC @ 10V | 5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI70P04P409AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi70p04p409aksa1-datasheets-1860.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 19 ns | 15ns | 31 ns | 24 ns | 72A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | P-CHANNEL | 40V | 75W Tc | 288A | 0.0094Ohm | 24 mJ | N-Channel | 4810pF @ 25V | 9.4m Ω @ 70A, 10V | 4V @ 120μA | 72A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPC80N04S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc80n04s403atma1-datasheets-1785.pdf | 8-PowerVDFN | Contains Lead | 3 | 8 | yes | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 80A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 320A | 0.0033Ohm | 215 mJ | N-Channel | 5720pF @ 25V | 3.3m Ω @ 40A, 10V | 4V @ 60μA | 80A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB65R280E6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r280e6atma1-datasheets-1790.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | 1.946308g | 3 | no | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 11 ns | 9ns | 9 ns | 76 ns | 13.8A | 30V | 650V | SILICON | DRAIN | SWITCHING | 104W Tc | 0.28Ohm | 290 mJ | 650V | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPP80P03P405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80p03p405aksa1-datasheets-1795.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | Contains Lead | 14 Weeks | 3 | Halogen Free | Single | PG-TO220-3-1 | 7.9nF | 35 ns | 10ns | 20 ns | 70 ns | 80A | 20V | -30V | 30V | 137W Tc | 5mOhm | P-Channel | 10300pF @ 25V | 5mOhm @ 80A, 10V | 4V @ 253μA | 80A Tc | 130nC @ 10V | 5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPL65R420E6AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r420e6auma1-datasheets-1800.pdf | 4-PowerTSFN | Contains Lead | 4 | 12 Weeks | 4 | Halogen Free | SINGLE | NO LEAD | 1 | 10.1A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 26A | 215 mJ | N-Channel | 710pF @ 100V | 420m Ω @ 3.4A, 10V | 3.5V @ 300μA | 10.1A Tc | 39nC @ 10V | 10V | ±20V |
