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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPI11N60C3AAKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT70SM70B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt70sm70b-datasheets-2236.pdf | TO-247-3 | 3 | 22 Weeks | OBSOLETE (Last Updated: 2 weeks ago) | EAR99 | SINGLE | 1 | R-PSFM-T3 | 65A | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 300W Tc | 58A | 137A | 0.09Ohm | N-Channel | 70m Ω @ 32.5A, 20V | 2.5V @ 1mA | 65A Tc | 125nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||
| 64-9149PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFP4310Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfp4310z-datasheets-2241.pdf | TO-247-3 | 3 | 19 Weeks | EAR99 | ULTRA LOW RESISTANCE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 128A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 278W Tc | TO-247AC | 120A | 480A | 0.006Ohm | 355 mJ | N-Channel | 7120pF @ 50V | 6m Ω @ 77A, 10V | 4V @ 150μA | 128A Tc | 188nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2SK4098FS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk4098fs-datasheets-2167.pdf | TO-220-3 Full Pack | 3 | EAR99 | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 2W | TO-220AB | 6A | 28A | 98 mJ | N-Channel | 600pF @ 30V | 1.1 Ω @ 3.5A, 10V | 6A Tc | 23.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| NVMFS6B03NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b03nlt1g-datasheets-2171.pdf | 8-PowerTDFN | Lead Free | 32 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 100V | 3.9W Ta 198W Tc | N-Channel | 5320pF @ 25V | 4m Ω @ 20A, 10V | 3V @ 250μA | 9.4nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6810STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irf6810str1pbf-datasheets-8385.pdf | DirectFET™ Isometric S1 | 3 | 13 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 2.1W | 1 | FET General Purpose Power | R-XBCC-N3 | 8.2 ns | 22ns | 4.8 ns | 11 ns | 16A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 20W Tc | 50A | 0.0052Ohm | 25V | N-Channel | 1038pF @ 13V | 5.2m Ω @ 16A, 10V | 2.1V @ 25μA | 16A Ta 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRFH7182TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7182trpbf-datasheets-2192.pdf | 8-PowerTDFN | Lead Free | 5 | EAR99 | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N5 | 157A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 195W Tc | 23A | 320A | 0.0039Ohm | 728 mJ | N-Channel | 3120pF @ 50V | 3.9m Ω @ 50A, 10V | 3.6V @ 250μA | 23A Ta 157A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP80N06S4L05AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-220-3 | 3 | 3 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 4ns | 13 ns | 80 ns | 80A | 16V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 107W Tc | TO-220AB | 0.0048Ohm | 152 mJ | N-Channel | 8180pF @ 25V | 8.5m Ω @ 40A, 4.5V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| FDMS86580-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms86580f085-datasheets-2198.pdf | 8-PowerTDFN | 24 Weeks | 172.8mg | 8 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | Single | 50A | 60V | 75W Tj | N-Channel | 1430pF @ 30V | 9.6m Ω @ 50A, 10V | 4.2V @ 250μA | 50A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLC4030EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80SM120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 1997 | TO-247-3 | 22 Weeks | EAR99 | 80A | 1200V | 555W Tc | N-Channel | 55m Ω @ 40A, 20V | 2.5V @ 1mA | 80A Tc | 235nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 94-2503PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 94-2355PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6B03NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b03nlt1g-datasheets-2171.pdf | 8-PowerTDFN | Lead Free | 32 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 100V | 3.9W Ta 198W Tc | N-Channel | 5320pF @ 25V | 4m Ω @ 20A, 10V | 3V @ 250μA | 9.4nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6B14NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-nvmfs6b14nlt1g-datasheets-2036.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 3V | 3.8W Ta 94W Tc | 140A | 0.019Ohm | 29 mJ | N-Channel | 1680pF @ 25V | 13m Ω @ 20A, 10V | 3V @ 250μA | 11A Ta 55A Tc | 8nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| NVMFS6B05NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b05nlt1g-datasheets-2224.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 38 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 3.8W Ta 165W Tc | 114A | 330A | 0.0082Ohm | 125 mJ | N-Channel | 3980pF @ 25V | 5.6m Ω @ 20A, 10V | 3V @ 250μA | 6.8nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IPP90N06S4L04AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb90n06s4l04atma2-datasheets-9134.pdf | TO-220-3 | 3 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 90A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | TO-220AB | 360A | 0.0034Ohm | N-Channel | 13000pF @ 25V | 3.7m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IPI120N06S403AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n06s403atma2-datasheets-8197.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSIP-T3 | 120A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 167W Tc | 480A | 0.0032Ohm | 392 mJ | N-Channel | 13150pF @ 25V | 3.2m Ω @ 100A, 10V | 4V @ 120μA | 120A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUD45P04-16P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud45p0416pge3-datasheets-2151.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 13 Weeks | 3 | EAR99 | No | GULL WING | 4 | 1 | Single | 2.1W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 20ns | 20 ns | 42 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.1W Ta 41.7W Tc | P-Channel | 2765pF @ 20V | 16.2m Ω @ 14A, 20V | 2.5V @ 250μA | 36A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| 94-4849PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | DPAK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP25P10-138-GE3 | Vishay Siliconix | $2.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup25p10138ge3-datasheets-2164.pdf | TO-220-3 | 3 | 6.000006g | No SVHC | 3 | EAR99 | unknown | 1 | Single | 1 | 16.3A | 20V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 100V | 3.1W Ta 73.5W Tc | TO-220AB | 40A | N-Channel | 2100pF @ 50V | 13.8m Ω @ 6A, 10V | 4V @ 250μA | 16.3A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUD50N02-09P-GE3 | Vishay Siliconix | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0209pge3-datasheets-2090.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 8kOhm | 3 | No | 1 | 8 ns | 10ns | 12 ns | 25 ns | 20A | 20V | 39.5W Tc | N-Channel | 1300pF @ 10V | 14m Ω @ 20A, 10V | 3V @ 250μA | 20A Ta | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPD04N60S5BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spu04n60s5bkma1-datasheets-1983.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 25 Weeks | no | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSSO-G2 | 55 ns | 30ns | 15 ns | 60 ns | 4.5A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50W Tc | TO-252AA | 9A | 0.95Ohm | N-Channel | 580pF @ 25V | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 4.5A Tc | 22.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| NVTFS5820NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-nvtfs5820nlwftwg-datasheets-7146.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 23 Weeks | 11.5MOhm | 8 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 21W | 1 | FET General Purpose Powers | S-PDSO-F5 | 10 ns | 28ns | 22 ns | 19 ns | 11A | 20V | SILICON | DRAIN | 3.2W Ta 21W Tc | 29A | 247A | 60V | N-Channel | 1462pF @ 25V | 11.5m Ω @ 8.7A, 10V | 2.3V @ 250μA | 11A Ta | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| IPB160N04S2L03ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb160n04s2l03atma1-datasheets-3845.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 7 | yes | ULTRA-LOW RESISTANCE | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 300W | 1 | R-PSSO-G6 | 20 ns | 51ns | 30 ns | 75 ns | 160A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 640A | 810 mJ | 40V | N-Channel | 6000pF @ 15V | 2.7m Ω @ 80A, 10V | 2V @ 250μA | 160A Tc | 230nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMT69M8LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt69m8lps13-datasheets-2053.pdf | 8-PowerTDFN | 17 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 70A | 60V | 2.3W Ta 113W Tc | N-Channel | 1925pF @ 30V | 12m Ω @ 13.5A, 10V | 2V @ 250μA | 10.2A Ta 70A Tc | 33.5nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFC4310EF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC4010EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM50P10-42-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50p1042e3-datasheets-2049.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | SINGLE | GULL WING | 4 | 18.8W | 1 | R-PSSO-G2 | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 100V | 18.8W Ta 125W Tc | 40A | 0.042Ohm | 80 mJ | N-Channel | 4600pF @ 50V | 4.2m Ω @ 14A, 10V | 3V @ 250μA | 36A Tc | 160nC @ 10V | 4.5V 10V | ±20V |
