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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| JANTXV2N6782U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6784u-datasheets-1732.pdf | 18-CLCC | 15 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | QUAD | 18 | 1 | Qualified | R-CQCC-N15 | 3.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100V | 100V | 800mW Ta 15W Tc | 14A | 0.61Ohm | 7 mJ | N-Channel | 610m Ω @ 3.5A, 10V | 4V @ 250μA | 3.5A Tc | 8.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| 2N6800 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-205AF Metal Can | 3 | 3 | No | 8541.21.00.95 | BOTTOM | WIRE | 1 | FET General Purpose Power | 3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 800mW Ta 25W Tc | 3A | 1.1Ohm | N-Channel | 1 Ω @ 2A, 10V | 4V @ 250μA | 3A Tc | 5.75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JAN2N7225 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | HIGH RELIABILITY | No | 8541.29.00.95 | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 27.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 4W Ta 150W Tc | 110A | 0.105Ohm | N-Channel | 105m Ω @ 27.4A, 10V | 4V @ 250μA | 27.4A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| 2N6768 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | HIGH RELIABILITY | 8541.29.00.95 | e0 | TIN LEAD OVER NICKEL | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | O-MBFM-P2 | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 150W Tc | 56A | 0.4Ohm | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| 2N6782 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | /files/microsemicorporation-jan2n6782-datasheets-1736.pdf | TO-205AF Metal Can | 3 | 3 | no | EAR99 | unknown | e0 | TIN LEAD | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 800mW Ta 15W Tc | 0.61Ohm | N-Channel | 600m Ω @ 2.25A, 10V | 4V @ 250μA | 3.5A Tc | 8.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| 2N6758 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | EAR99 | HIGH RELIABILITY | 8541.29.00.95 | BOTTOM | PIN/PEG | 2 | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | 80ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 75W Tc | 9A | 36A | 0.49Ohm | N-Channel | 490m Ω @ 9A, 10V | 4V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| 2N6770 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 3 | no | HIGH RELIABILITY | unknown | 8541.29.00.95 | e0 | TIN LEAD OVER NICKEL | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | 190ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 150W Tc | 48A | 0.5Ohm | N-Channel | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||
| 2N6760 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | HIGH RELIABILITY | 8541.29.00.95 | BOTTOM | PIN/PEG | 2 | 1 | FET General Purpose Power | O-MBFM-P2 | 40ns | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 75W Tc | 22A | N-Channel | 1.22 Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| JANTXV2N6758 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | no | EAR99 | RADIATION HARDENED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/542 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 75W Tc | 9A | 15A | 0.49Ohm | N-Channel | 490m Ω @ 9A, 10V | 4V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||
| APT9F100S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt9f100b-datasheets-3923.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 337W Tc | 9A | 37A | 574 mJ | N-Channel | 2606pF @ 25V | 1.6 Ω @ 5A, 10V | 5V @ 1mA | 9A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| 2N7236U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7236u-datasheets-1807.pdf | TO-267AB | 3 | EAR99 | DUAL | NO LEAD | 3 | 1 | Not Qualified | R-PDSO-N3 | 18A | SILICON | SINGLE | DRAIN | 100V | 100V | 4W Ta 125W Tc | 0.22Ohm | P-Channel | 200m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| 2N6782U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6784u-datasheets-1732.pdf | 18-CLCC | 15 | EAR99 | No | e4 | GOLD OVER NICKEL | QUAD | 250 | 18 | 30 | 1 | R-CQCC-N15 | 3.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 100V | 100V | 800mW Ta 15W Tc | 0.61Ohm | N-Channel | 600m Ω @ 2.25A, 10V | 4V @ 250μA | 3.5A Tc | 8.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| 2N6788U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | QUAD | NO LEAD | NOT SPECIFIED | 18/15 | NOT SPECIFIED | 1 | FET General Purpose Power | R-CQCC-N15 | 70ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 100V | 100V | 800mW Tc | 18A | 0.35Ohm | N-Channel | 300m Ω @ 3.5A, 10V | 4V @ 250μA | 4.5A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| JANTX2N6766T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | No | e0 | TIN LEAD | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| 2N6796 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | EAR99 | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBCY-W3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 800mW Ta 25W Tc | 8A | 0.195Ohm | N-Channel | 180m Ω @ 5A, 10V | 4V @ 250mA | 8A Tc | 6.34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| 2N6784U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6784u-datasheets-1732.pdf | 18-CLCC | 15 | EAR99 | e4 | GOLD OVER NICKEL | QUAD | NO LEAD | 250 | 18 | 30 | 1 | R-CQCC-N15 | 2.25A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 200V | 200V | 800mW Ta 15W Tc | 2.81Ohm | N-Channel | 1.5 Ω @ 1.5A, 0V | 4V @ 250μA | 2.25A Tc | 8.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| 2N7228U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | EAR99 | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 500V | 500V | 4W Ta 150W Tc | TO-276AB | 0.515Ohm | N-Channel | 415m Ω @ 8A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| 2N6756 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | EAR99 | unknown | BOTTOM | PIN/PEG | 2 | 1 | Not Qualified | O-MBFM-P2 | 80ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 4W Ta 75W Tc | 0.21Ohm | N-Channel | 210m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| JANTXV2N6800U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | AVALANCHE RATED | No | MIL-19500/557 | QUAD | 1 | Qualified | R-CQCC-N15 | 30 ns | 35ns | 35 ns | 35 ns | 3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 400V | 400V | 800mW Ta 25W Tc | 3A | 12A | 1.15Ohm | 0.51 mJ | N-Channel | 1.1 Ω @ 3A, 10V | 4V @ 250μA | 3A Tc | 34.75nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| 2N7227U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | No | BOTTOM | 3 | 1 | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 400V | 400V | 4W Ta 150W Tc | TO-276AB | 0.415Ohm | N-Channel | 315m Ω @ 9A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| 2N7224U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | EAR99 | unknown | e0 | TIN LEAD | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 4W Ta 150W Tc | TO-276AB | 0.081Ohm | N-Channel | 81m Ω @ 34A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| JANTXV2N7236U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/595 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7236u-datasheets-1807.pdf | TO-267AB | 3 | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | DUAL | 3 | 4W | 1 | Qualified | 18A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 4W Ta 125W Tc | 72A | 0.22Ohm | 500 mJ | P-Channel | 220m Ω @ 18A, 10V | 4V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| JANTXV2N7227U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | HIGH RELIABILITY | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | 3 | 1 | Qualified | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 150W Tc | TO-276AB | 56A | 0.415Ohm | 700 mJ | N-Channel | 415m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| JANTXV2N7224U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | EAR99 | HIGH RELIABILITY | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/592 | BOTTOM | 3 | 1 | Qualified | 35 ns | 190ns | 130 ns | 170 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 150W Tc | TO-276AB | 0.081Ohm | 150 mJ | N-Channel | 81m Ω @ 34A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||
| JANTXV2N7225 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 36 Weeks | no | EAR99 | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 4W | 1 | FET General Purpose Powers | Qualified | S-MSFM-P3 | 27.4A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 200V | 200V | 4W Ta 150W Tc | 500 mJ | N-Channel | 105m Ω @ 27.4A, 10V | 4V @ 250μA | 27.4A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| JANTXV2N7227 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | MIL | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | 14A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 400V | 400V | 4W Ta 150W Tc | 56A | 700 mJ | N-Channel | 415m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| JANTXV2N7225U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | EAR99 | AVALANCHE RATED | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/592 | BOTTOM | 3 | 1 | Qualified | 27.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 150W Tc | TO-276AB | 110A | 0.105Ohm | 500 mJ | N-Channel | 105m Ω @ 27.4A, 10V | 4V @ 250μA | 27.4A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||
| APTML10UM09R004T1AG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP1 | 12 | 1 | EAR99 | No | UPPER | UNSPECIFIED | 12 | 480W | 1 | FET General Purpose Power | 154A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 100V | 480W Tc | 67A | 430A | 3000 mJ | N-Channel | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 154A Tc | 10V | ±30V | |||||||||||||||||||||||||||
| JANTXV2N6760 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | no | RADIATION HARDENED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 75W Tc | 5.5A | 8A | N-Channel | 1.22 Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| 2N7225 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | HIGH RELIABILITY | Lead, Tin | unknown | 8541.29.00.95 | e4 | GOLD OVER NICKEL | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 27.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 4W Ta 150W Tc | 110A | 0.105Ohm | N-Channel | 100m Ω @ 17A, 10V | 4V @ 250μA | 27.4A Tc | 115nC @ 10V | 10V | ±20V |
