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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV2N6760 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | no | RADIATION HARDENED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 75W Tc | 5.5A | 8A | N-Channel | 1.22 Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| 2N7227 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | AVALANCHE RATED | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | MIL | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | 14A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 400V | 400V | 4W Ta 150W Tc | 56A | 700 mJ | N-Channel | 315m Ω @ 9A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||
| JANTXV2N7224 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | EAR99 | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 4W | 1 | FET General Purpose Powers | Qualified | 34A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 100V | 4W Ta 150W Tc | 0.07Ohm | N-Channel | 81m Ω @ 34A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| 2N7225U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | EAR99 | unknown | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | 27.4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 4W Ta 150W Tc | TO-276AB | 0.105Ohm | N-Channel | 100m Ω @ 17A, 10V | 4V @ 250μA | 27.4A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| 2N7224 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.29.00.95 | e4 | Gold (Au) - with Nickel (Ni) barrier | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 4W Ta 150W Tc | 0.081Ohm | N-Channel | 70m Ω @ 21A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| JANTXV2N7236 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/595 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n7236-datasheets-1948.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | yes | EAR99 | HIGH RELIABILITY | Lead, Tin | unknown | e4 | Gold (Au) - with Nickel (Ni) barrier | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 4W | 1 | Qualified | S-CSFM-P3 | 18A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 100V | 4W Ta 125W Tc | 72A | 0.22Ohm | 500 mJ | P-Channel | 220m Ω @ 18A, 10V | 4V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||
| JAN2N7236 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/595 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n7236-datasheets-1948.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | 3 | 4W | 1 | Qualified | S-CSFM-P3 | 18A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 100V | 4W Ta 125W Tc | 72A | 0.22Ohm | 500 mJ | P-Channel | 220m Ω @ 18A, 10V | 4V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| JANTX2N7224 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500/592 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 34A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 100V | 100V | 4W Ta 150W Tc | 0.07Ohm | 150 mJ | N-Channel | 81m Ω @ 34A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| JANTXV2N6784U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6784u-datasheets-1732.pdf | 18-CLCC | 15 | EAR99 | MIL-19500/556 | QUAD | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Qualified | R-CQCC-N15 | 2.25A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 200V | 200V | 800mW Ta 15W Tc | 9A | 1.725Ohm | 20 mJ | N-Channel | 1.6 Ω @ 2.25A, 10V | 4V @ 250μA | 2.25A Tc | 8.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| JAN2N7228U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | No | MIL-19500 | BOTTOM | 3 | 1 | Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 500V | 500V | 4W Ta 150W Tc | TO-276AB | 0.515Ohm | N-Channel | 515m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| JANTXV2N6849U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/564 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6849u-datasheets-1922.pdf | 18-CLCC | 15 | 18 | EAR99 | QUAD | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 25W | 1 | Qualified | 6.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100V | 800mW Ta 25W Tc | 25A | 0.345Ohm | P-Channel | 320m Ω @ 6.5A, 10V | 4V @ 250μA | 6.5A Tc | 34.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| JANTXV2N6788 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | RADIATION HARDENED | e0 | Tin/Lead (Sn/Pb) | MILITARY STANDARD (USA) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | 70ns | 6A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 100V | 800mW Tc | 6A | 24A | N-Channel | 350m Ω @ 6A, 10V | 4V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||
| JANTXV2N6768T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | No | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | Qualified | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 400V | 400V | 4W Ta 150W Tc | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| JANTXV2N6798U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500/557 | QUAD | 18 | 1 | Qualified | R-CQCC-N15 | 30 ns | 50ns | 40 ns | 50 ns | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 200V | 200V | 800mW Ta 25W Tc | 22A | 0.42Ohm | 98 mJ | N-Channel | 420m Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 42.07nC @ 10V | 10V | ±20V | |||||||||||||||||
| JANTXV2N7228 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | AVALANCHE RATED | No | e0 | Tin/Lead (Sn/Pb) | MIL | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 12A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 500V | 500V | 4W Ta 150W Tc | 48A | 0.415Ohm | 750 mJ | N-Channel | 515m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| 2N6901 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n6901-datasheets-1817.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | BOTTOM | WIRE | 2 | 1 | Not Qualified | 80ns | 1.69A | 10V | SILICON | SINGLE | DRAIN | 100V | 100V | 8.33W Tc | 1.4Ohm | N-Channel | 2.6 Ω @ 1.07A, 5V | 2V @ 1mA | 1.69A Tc | 1nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||
| JANTXV2N6784 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6782-datasheets-1736.pdf | TO-205AF Metal Can | 3 | EAR99 | RADIATION HARDENED | unknown | e0 | Tin/Lead (Sn/Pb) | MILITARY STANDARD (USA) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | O-MBCY-W3 | 2.25A | SILICON | SINGLE | DRAIN | SWITCHING | 200V | 200V | 800mW Ta 15W Tc | TO-39 | 9A | 1.5Ohm | N-Channel | 1.6 Ω @ 2.25A, 10V | 4V @ 250μA | 2.25A Tc | 8.6nC @ 10V | 10V | ±20V | |||||||||||||||||||
| JANTX2N6802U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | EAR99 | MIL-19500/557 | QUAD | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Qualified | R-CQCC-N15 | 30ns | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 500V | 500V | 800mW Ta 25W Tc | 11A | 1.725Ohm | 0.31 mJ | N-Channel | 1.6 Ω @ 2.5A, 10V | 4V @ 250μA | 2.5A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| JANTXV2N6790U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | HIGH RELIABILTY | unknown | MIL-19500 | QUAD | NO LEAD | NOT SPECIFIED | 18/15 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | R-CQCC-N15 | 2.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 200V | 200V | 800mW Tc | 3.5A | 11A | 0.85Ohm | N-Channel | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 2.8A Tc | 14.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| JANTXV2N6901 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/570 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n6901-datasheets-1817.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | No | 8541.21.00.95 | MIL-19500/570B | BOTTOM | WIRE | 2 | 1 | Qualified | 25 ns | 80ns | 80 ns | 45 ns | 1.69A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 8.33W Tc | N-Channel | 1.4 Ω @ 1.07A, 5V | 2V @ 1mA | 1.69A Tc | 5nC @ 5V | 5V | ±10V | |||||||||||||||||||||
| JANTXV2N6802 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | 30 Weeks | 3 | HIGH RELIABILITY | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 800mW Ta 25W Tc | 11A | N-Channel | 1.6 Ω @ 2.5A, 10V | 4V @ 250μA | 2.5A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| JANTXV2N6796 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-jantxv2n6796-datasheets-9871.pdf | TO-205AF Metal Can | 3 | 24 Weeks | 3 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 800mW | 1 | FET General Purpose Power | Qualified | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 800mW Ta 25W Tc | 8A | N-Channel | 195m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 28.51nC @ 10V | 10V | ±20V | ||||||||||||||||||
| JAN2N6802 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-205AF Metal Can | 3 | FET General Purpose Power | Qualified | 2.5A | 20V | Single | 500V | 800mW Ta 25W Tc | N-Channel | 1.6 Ω @ 2.5A, 10V | 4V @ 250μA | 2.5A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| JANTXV2N6800 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | 3 | HIGH RELIABILITY | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | 3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 800mW Ta 25W Tc | 3A | 14A | N-Channel | 1.1 Ω @ 3A, 10V | 4V @ 250μA | 3A Tc | 34.75nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| JANTXV2N6802U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | No | MIL-19500/557 | QUAD | 1 | Qualified | R-CQCC-N15 | 30 ns | 30ns | 30 ns | 55 ns | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 500V | 500V | 800mW Ta 25W Tc | 11A | 1.725Ohm | 0.31 mJ | N-Channel | 1.6 Ω @ 2.5A, 10V | 4V @ 250μA | 2.5A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| JAN2N6798U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | yes | EAR99 | No | e4 | Gold (Au) - with Nickel (Ni) barrier | MIL-19500/557 | QUAD | 18 | 1 | Qualified | R-CQCC-N15 | 30 ns | 50ns | 40 ns | 50 ns | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 200V | 200V | 800mW Ta 25W Tc | 0.42Ohm | N-Channel | 420m Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 42.07nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| JANTXV2N6770 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | no | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 150W | 1 | FET General Purpose Powers | Qualified | O-MBFM-P2 | 190ns | 12A | 20V | SILICON | SINGLE | DRAIN | 500V | 500V | 4W Ta 150W Tc | TO-3 | 0.4Ohm | N-Channel | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||
| JANTX2N7228U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 150W Tc | TO-276AB | 48A | 0.515Ohm | 750 mJ | N-Channel | 515m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||
| JANTXV2N6770T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | No | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 500V | 500V | 4W Ta 150W Tc | 0.5Ohm | N-Channel | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| JANTXV2N6762 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | no | RADIATION HARDENED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 75W Tc | 7A | N-Channel | 1.8 Ω @ 4.5A, 10V | 4V @ 250μA | 4.5A Tc | 40nC @ 10V | 10V | ±20V |
