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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| JANTX2N6796U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | 18 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | MIL-19500/557 | QUAD | NO LEAD | NOT SPECIFIED | 16 | NOT SPECIFIED | 25W | 1 | Qualified | R-CQCC-N15 | 75ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100V | 100V | 800mW Ta 25W Tc | 8A | 32A | 0.195Ohm | 134 mJ | N-Channel | 195m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 28.51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| JANTX2N6766 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | Contains Lead | 2 | EAR99 | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 4W | 1 | FET General Purpose Powers | Qualified | O-MBFM-P2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| JAN2N6770T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | No | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 500V | 500V | 4W Ta 150W Tc | 0.5Ohm | N-Channel | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| JAN2N6796 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | 3 | EAR99 | unknown | 8541.21.00.95 | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 800mW Ta 25W Tc | 8A | 0.18Ohm | N-Channel | 85ns | 105ns | 195m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 28.51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| JAN2N6760 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | no | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 40ns | 35 ns | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 75W Tc | 22A | N-Channel | 1.22 Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| JAN2N6756 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500/542G | BOTTOM | PIN/PEG | 2 | 1 | FET General Purpose Power | Qualified | O-MBFM-P2 | 35 ns | 80ns | 45 ns | 60 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 75W Tc | 56A | 0.21Ohm | N-Channel | 210m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SSM3K310T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k310tte85lf-datasheets-1705.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | unknown | 1 | Single | FET General Purpose Power | 21 ns | 36 ns | 5A | 1V | 700mW Ta | 5A | 20V | N-Channel | 1120pF @ 10V | 28m Ω @ 4A, 4V | 5A Ta | 14.8nC @ 4V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APT12067JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | SOT-227-4, miniBLOC | 4 | 1 | FET General Purpose Power | 17A | 1200V | 460W Tc | N-Channel | 6200pF @ 25V | 570m Ω @ 10A, 10V | 5V @ 2.5mA | 17A Tc | 290nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N7227U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | No | MIL-19500 | BOTTOM | 3 | 1 | Qualified | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 400V | 400V | 4W Ta 150W Tc | TO-276AB | 0.415Ohm | N-Channel | 415m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT33N90JCCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | UPPER | UNSPECIFIED | 4 | 290W | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 290W Tc | 75A | N-Channel | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 33A Tc | 270nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| JAN2N6800 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | 3 | HIGH RELIABILITY | 8541.21.00.95 | MIL-19500 | BOTTOM | WIRE | 1 | FET General Purpose Power | Qualified | 3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 800mW Ta 25W Tc | 3A | 14A | N-Channel | 1.1 Ω @ 3A, 10V | 4V @ 250μA | 3A Tc | 34.75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| JANTX2N6756 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/542 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | O-MBFM-P2 | 80ns | 14A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 75W Tc | 56A | 0.18Ohm | N-Channel | 210m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JAN2N6798 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | 3 | no | EAR99 | HIGH RELIABILITY | 8541.21.00.95 | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 800mW Ta 25W Tc | 0.42Ohm | N-Channel | 420m Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 42.07nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| JAN2N6802U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | No | FET General Purpose Power | Qualified | 30 ns | 30ns | 30 ns | 55 ns | 2.5A | 20V | Single | 500V | 800mW Ta 25W Tc | N-Channel | 1.6 Ω @ 2.5A, 10V | 4V @ 250μA | 2.5A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT53N60SC6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt53n60sc6-datasheets-1766.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | No | 417W | 1 | D3Pak | 4.02nF | 14 ns | 36ns | 74 ns | 151 ns | 53A | 20V | 600V | 417W Tc | N-Channel | 4020pF @ 25V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 53A Tc | 154nC @ 10V | Super Junction | 70 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| JAN2N6788U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | HIGH RELIABILTY | No | MIL-19500 | QUAD | 1 | FET General Purpose Powers | Qualified | R-CQCC-N15 | 70ns | 70 ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 100V | 100V | 800mW Tc | 6A | 18A | 0.35Ohm | N-Channel | 350m Ω @ 6A, 10V | 4V @ 250μA | 4.5A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| JAN2N6766T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | EAR99 | No | e0 | TIN LEAD | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| JAN2N6788 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | 1 | FET General Purpose Powers | Qualified | 40 ns | 70ns | 70 ns | 40 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 800mW Tc | 6A | 24A | N-Channel | 350m Ω @ 6A, 10V | 4V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| JAN2N6782 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/microsemicorporation-jan2n6782-datasheets-1736.pdf | TO-205AF Metal Can | 3 | 3 | no | EAR99 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | Qualified | 3.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 800mW Ta 15W Tc | 14A | 0.6Ohm | N-Channel | 45ns | 40ns | 610m Ω @ 3.5A, 10V | 4V @ 250μA | 3.5A Tc | 8.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMG4N65CTI | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg4n65cti-datasheets-1739.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 8 Weeks | 2.299997g | No SVHC | 3 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | 1 | FET General Purpose Power | 15.1 ns | 13.8ns | 16 ns | 40 ns | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 8.35W Ta | TO-220AB | 4A | 6A | 3Ohm | 456 mJ | 650V | N-Channel | 900pF @ 25V | 3 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 13.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| JAN2N6762 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | no | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 30 ns | 40ns | 30 ns | 80 ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 75W Tc | 18A | N-Channel | 1.8 Ω @ 4.5A, 10V | 4V @ 250μA | 4.5A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SSM3K302T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k302tte85lf-datasheets-1690.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 1 | Single | FET General Purpose Powers | 20 ns | 31 ns | 3A | 12V | 700mW Ta | 3A | 30V | N-Channel | 270pF @ 10V | 71m Ω @ 2A, 4V | 3A Ta | 4.3nC @ 4V | 1.8V 4V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6784 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6782-datasheets-1736.pdf | TO-205AF Metal Can | 3 | EAR99 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | Qualified | O-MBCY-W3 | 2.25A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 800mW Ta 15W Tc | 9A | 1.5Ohm | N-Channel | 1.6 Ω @ 2.25A, 10V | 4V @ 250μA | 2.25A Tc | 8.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APTML20UM18R010T1AG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP1 | 12 | 1 | EAR99 | No | UPPER | UNSPECIFIED | 12 | 480W | 1 | FET General Purpose Power | 109A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | 480W Tc | 44A | 400A | 3000 mJ | N-Channel | 9880pF @ 25V | 19m Ω @ 50A, 10V | 4V @ 2.5mA | 109A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| JAN2N6764T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | EAR99 | MIL-19500/543 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | S-XSFM-P3 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 100V | 100V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SSM3K309T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | 1 | Single | FET General Purpose Powers | 23 ns | 34 ns | 4.7A | 1V | 700mW Ta | 20V | N-Channel | 1020pF @ 10V | 31m Ω @ 4A, 4V | 4.7A Ta | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6768 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 3 | no | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 35 ns | 190ns | 130 ns | 170 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 150W Tc | TO-204AA | 56A | 700 mJ | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JAN2N6849 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/564 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6849-datasheets-1758.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | HIGH RELIABILITY | Lead, Tin | BOTTOM | WIRE | 800mW | 1 | Other Transistors | Qualified | 6.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 800mW Ta 25W Tc | P-Channel | 320m Ω @ 6.5A, 10V | 4V @ 250μA | 6.5A Tc | 34.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| APT33N90JCCU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt33n90jccu2-datasheets-1761.pdf | SOT-227-4, miniBLOC | 4 | 22 Weeks | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | UPPER | UNSPECIFIED | 4 | 290W | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 290W Tc | 75A | N-Channel | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 33A Tc | 270nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||
| JAN2N6758 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500/542 | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 35 ns | 80ns | 40 ns | 60 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 75W Tc | 9A | 0.49Ohm | N-Channel | 490m Ω @ 9A, 10V | 4V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±20V |
