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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| JANTXV2N6790U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | HIGH RELIABILTY | unknown | MIL-19500 | QUAD | NO LEAD | NOT SPECIFIED | 18/15 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | R-CQCC-N15 | 2.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 200V | 200V | 800mW Tc | 3.5A | 11A | 0.85Ohm | N-Channel | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 2.8A Tc | 14.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| JANTXV2N6804 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/562 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n6804-datasheets-3638.pdf | TO-204AA, TO-3 | 2 | 3 | no | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 140ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 75W Tc | 50A | 81 mJ | P-Channel | 360m Ω @ 11A, 10V | 4V @ 250μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| JANTXV2N6790 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | EAR99 | RADIATION HARDENED | unknown | e0 | Tin/Lead (Sn/Pb) | MILITARY STANDARD (USA) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | O-MBCY-W3 | 3.5A | SILICON | SINGLE | DRAIN | SWITCHING | 200V | 200V | 800mW Tc | TO-39 | 14A | 0.8Ohm | N-Channel | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 3.5A Tc | 14.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| JANTX2N6764T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | EAR99 | MIL-19500/543 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | S-XSFM-P3 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 100V | 100V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| JANTXV2N6764T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | EAR99 | MIL-19500/543 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | S-XSFM-P3 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 100V | 100V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| JANTXV2N6764 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 36 Weeks | 3 | EAR99 | RADIATION HARDENED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MILITARY STANDARD (USA) | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 150W Tc | 70A | 0.055Ohm | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| JANTX2N6790U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | HIGH RELIABILTY | unknown | MIL-19500 | QUAD | NO LEAD | NOT SPECIFIED | 18/15 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | R-CQCC-N15 | 2.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 200V | 200V | 800mW Tc | 3.5A | 11A | 0.85Ohm | 66 mJ | N-Channel | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 2.8A Tc | 14.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| APT58M50JCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 60 ns | 70ns | 50 ns | 155 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 543W Tc | 270A | 0.065Ohm | N-Channel | 10800pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 58A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| JANTX2N7236 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/595 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx2n7236-datasheets-1948.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | yes | EAR99 | HIGH RELIABILITY | Lead, Tin | e4 | Gold (Au) - with Nickel (Ni) barrier | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 4W | 1 | Qualified | S-CSFM-P3 | 18A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 100V | 4W Ta 125W Tc | 72A | 0.22Ohm | 500 mJ | P-Channel | 220m Ω @ 18A, 10V | 4V @ 250μA | 18A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| JANTX2N7224U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | EAR99 | HIGH RELIABILITY | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/592 | BOTTOM | 3 | 1 | Qualified | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 150W Tc | TO-276AB | 0.081Ohm | 150 mJ | N-Channel | 81m Ω @ 34A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| JANTXV2N6766 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 3 | EAR99 | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 30A | 20V | SILICON | SINGLE | 200V | 200V | 4W Ta 150W Tc | 0.085Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| JANTXV2N6796U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | MIL-19500/557 | QUAD | NO LEAD | NOT SPECIFIED | 16 | NOT SPECIFIED | 1 | Qualified | R-CQCC-N15 | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100V | 100V | 800mW Ta 25W Tc | 8A | 32A | 0.195Ohm | 134 mJ | N-Channel | 195m Ω @ 8A, 10V | 4V @ 250μA | 8A Tc | 28.51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| JANTX2N6762 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | no | not_compliant | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 75W Tc | 18A | N-Channel | 1.8 Ω @ 4.5A, 10V | 4V @ 250μA | 4.5A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JAN2N7224U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500/592 | BOTTOM | 3 | 1 | Qualified | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 4W Ta 150W Tc | TO-276AB | 0.081Ohm | N-Channel | 81m Ω @ 34A, 10V | 4V @ 250μA | 34A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| APT24F50S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt24f50b-datasheets-4688.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 335W Tc | 82A | 0.24Ohm | 495 mJ | N-Channel | 3630pF @ 25V | 240m Ω @ 11A, 10V | 5V @ 1mA | 24A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| JAN2N6790U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | HIGH RELIABILTY | MIL-19500 | QUAD | NO LEAD | NOT SPECIFIED | 18/15 | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | R-CQCC-N15 | 2.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 200V | 200V | 800mW Tc | 3.5A | 11A | 0.85Ohm | N-Channel | 850m Ω @ 3.5A, 10V | 4V @ 250μA | 2.8A Tc | 14.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| JAN2N6766 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 3 | EAR99 | Lead, Tin | unknown | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 150W Tc | 120A | 0.085Ohm | 500 mJ | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| JAN2N6901 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/570 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx2n6901-datasheets-1817.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | No | 8541.21.00.95 | MIL-19500/570B | BOTTOM | WIRE | 2 | 1 | Qualified | 25 ns | 80ns | 80 ns | 45 ns | 1.69A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 8.33W Tc | N-Channel | 1.4 Ω @ 1.07A, 5V | 2V @ 1mA | 1.69A Tc | 5nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||
| APTC90SKM60CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc90skm60ct1g-datasheets-1931.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | UPPER | UNSPECIFIED | 12 | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 900V | 900V | 462W Tc | 0.06Ohm | N-Channel | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 59A Tc | 540nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||
| IPD60R600P6 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd60r600p6-datasheets-1513.pdf&product=infineontechnologies-ipd60r600p6-6928786 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | no | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 63W Tc | 7.3A | 18A | 0.6Ohm | 133 mJ | N-Channel | 557pF @ 100V | 600m Ω @ 2.4A, 10V | 7.3A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JANTXV2N6782 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/556 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6782-datasheets-1736.pdf | TO-205AF Metal Can | 3 | 3 | no | EAR99 | RADIATION HARDENED | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | 3.5A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 100V | 800mW Ta 15W Tc | 14A | 0.6Ohm | N-Channel | 610m Ω @ 3.5A, 10V | 4V @ 250μA | 3.5A Tc | 8.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| APTML50UM90R020T1AG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP1 | 6 | 1 | EAR99 | No | UPPER | THROUGH-HOLE | 12 | 568W | 1 | FET General Purpose Power | R-XUFM-T6 | 52A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 568W Tc | 200A | 3000 mJ | N-Channel | 7600pF @ 25V | 108m Ω @ 26A, 10V | 4V @ 2.5mA | 52A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||
| JANTX2N6760 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 36 Weeks | no | not_compliant | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 5.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 75W Tc | 22A | N-Channel | 1.22 Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| JANTX2N6768 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | no | Lead, Tin | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 4W | 1 | Qualified | O-MBFM-P2 | 190ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 150W Tc | TO-204AA | 56A | 0.3Ohm | 700 mJ | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| JANTX2N6788 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/555 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | RADIATION HARDENED | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | Qualified | 70ns | 6A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 100V | 100V | 800mW Tc | 6A | 24A | N-Channel | 350m Ω @ 6A, 10V | 4V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| JANTX2N7227U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Qualified | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 150W Tc | TO-276AB | 56A | 0.415Ohm | 700 mJ | N-Channel | 415m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| JANTX2N6770T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | TO-254AA | 500V | 4W Ta 150W Tc | N-Channel | 500mOhm @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6800 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AD, TO-39-3 Metal Can | 3 | 3 | HIGH RELIABILITY | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | 3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 800mW Ta 25W Tc | TO-205AF | 3A | 14A | N-Channel | 1.1 Ω @ 3A, 10V | 4V @ 250μA | 3A Tc | 34.75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| JANTX2N6768T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | No | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | Qualified | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 400V | 400V | 4W Ta 150W Tc | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APT5014SLLG/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5014sllgtr-datasheets-1921.pdf | TO-247-3 | TO-247 | 3.261nF | 35A | 500V | 403W Tc | N-Channel | 3261pF @ 25V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 140 mΩ | 10V | ±30V |
