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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| HUFA75639S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75639s3stf085a-datasheets-0269.pdf | 100V | 56A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 16 Weeks | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | Single | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 60ns | 25 ns | 20 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 0.025Ohm | 100V | N-Channel | 2000pF @ 25V | 25m Ω @ 56A, 10V | 4V @ 250μA | 56A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDMC612PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/onsemiconductor-fdmc612pz-datasheets-9820.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 5 | 180mg | 8 | CONSULT SALES OFFICE (Last Updated: 1 week ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.3W | 1 | Other Transistors | S-PDSO-N5 | 26 ns | 52ns | 81 ns | 96 ns | 14A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 2.3W Ta 26W Tc | MO-240BA | 40A | 50A | P-Channel | 7995pF @ 10V | 8.4m Ω @ 14A, 4.5V | 1.5V @ 250μA | 14A Ta | 74nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| BUK961R5-30E,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 324W Tc | 120A | 1393A | 0.0015Ohm | 1096 mJ | N-Channel | 14500pF @ 25V | 1.3m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 93.4nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AON6413 | Alpha & Omega Semiconductor Inc. | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 2.142nF | 32A | 30V | 6.2W Ta 48W Tc | P-Channel | 2142pF @ 15V | 8.5mOhm @ 16A, 10V | 2.7V @ 250μA | 22A Ta 32A Tc | 58nC @ 10V | 8.5 mΩ | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFMA3P029Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdfma3p029z-datasheets-0623.pdf | 6-VDFN Exposed Pad | 6 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | 1 | 3ns | 11 ns | 17 ns | 3.3A | 25V | 30V | 1.4W Ta | -30V | P-Channel | 435pF @ 15V | 87m Ω @ 3.3A, 10V | 3V @ 250μA | 3.3A Ta | 10nC @ 10V | Schottky Diode (Isolated) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF10T60P | Alpha & Omega Semiconductor Inc. | $29.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-262-3 Full Pack, I2Pak | 16 Weeks | TO-262F | 1.595nF | 10A | 600V | 28W Tc | N-Channel | 1595pF @ 100V | 700mOhm @ 5A, 10V | 5V @ 250μA | 10A Tc | 40nC @ 10V | 700 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF12T50P | Alpha & Omega Semiconductor Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | TO-220-3F | 1.477nF | 12A | 500V | 43W Tc | N-Channel | 1477pF @ 100V | 500mOhm @ 6A, 10V | 5V @ 250μA | 12A Tc | 32nC @ 10V | 500 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI530 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | TO-251-3 Stub Leads, IPak | FET General Purpose Power | 70A | Single | 30V | 2.5W Ta 83W Tc | N-Channel | 3130pF @ 15V | 2.7m Ω @ 20A, 10V | 2.2V @ 250μA | 23A Ta 70A Tc | 62nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8870-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8870f085-datasheets-0260.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | 260 | Single | 30 | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 98ns | 47 ns | 75 ns | 23A | 20V | SILICON | DRAIN | SWITCHING | 160W Tc | 160A | 0.0044Ohm | 30V | N-Channel | 5200pF @ 15V | 3.9m Ω @ 35A, 10V | 2.5V @ 250μA | 23A Ta 160A Tc | 132nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AO4292 | Alpha & Omega Semiconductor Inc. | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 3.1W Ta | 8A | 0.023Ohm | N-Channel | 1190pF @ 50V | 23m Ω @ 8A, 10V | 2.7V @ 250μA | 8A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14C65W5,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 2.387001g | 3 | No | 1 | Single | I2PAK | 1.3nF | 90 ns | 40ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 130W Tc | 250mOhm | 650V | N-Channel | 1300pF @ 300V | 300mOhm @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GA05JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NO | Other Transistors | 5A | N-CHANNEL | 1200V | 106W Tc | 280m Ω @ 5A | 5A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF10T60PL | Alpha & Omega Semiconductor Inc. | $20.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf7t60pl-datasheets-2991.pdf | TO-220-3 Full Pack | 16 Weeks | TO-220F | 1.595nF | 10A | 600V | 33W Tc | N-Channel | 1595pF @ 100V | 700mOhm @ 5A, 10V | 5V @ 250μA | 10A Tc | 40nC @ 10V | 700 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6725MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf6725mtr1pbf-datasheets-2498.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | 3 | 17 Weeks | No SVHC | 5 | EAR99 | No | BOTTOM | 100W | 1 | FET General Purpose Power | R-XBCC-N3 | 16 ns | 22ns | 13 ns | 19 ns | 170A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta 100W Tc | 28A | 220A | 0.0022Ohm | 190 mJ | 30V | N-Channel | 4700pF @ 15V | 1.8 V | 2.2m Ω @ 28A, 10V | 2.35V @ 100μA | 28A Ta 170A Tc | 54nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIRA34DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira34dpt1ge3-datasheets-0575.pdf | PowerPAK® SO-8 | 5 | 22 Weeks | 506.605978mg | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.3W | 1 | FET General Purpose Power | R-PDSO-C5 | 11 ns | 11ns | 6 ns | 19 ns | 40A | -16V | SILICON | DRAIN | SWITCHING | 3.3W Ta 31.25W Tc | 0.0067Ohm | 5 mJ | 30V | N-Channel | 1100pF @ 15V | 6.7m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 25nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
| FDB8445-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb8445f085-datasheets-0327.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | No | Single | 92W | 1 | FET General Purpose Power | 10 ns | 19ns | 16 ns | 36 ns | 70A | 20V | 92W Tc | 40V | N-Channel | 3805pF @ 25V | 9m Ω @ 70A, 10V | 4V @ 250μA | 70A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86106LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmc86106lz-datasheets-0587.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 8 | Gold | No | 19W | 1 | 8-MLP (3.3x3.3) | 310pF | 4.5 ns | 1.3ns | 1.4 ns | 10 ns | 7.5A | 20V | 100V | 2.3W Ta 19W Tc | 103mOhm | 100V | N-Channel | 310pF @ 50V | 103mOhm @ 3.3A, 10V | 2.2V @ 250μA | 3.3A Ta 7.5A Tc | 6nC @ 10V | 103 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4578 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | FET General Purpose Power | 20A | Single | 30V | 3.1W Ta | N-Channel | 1128pF @ 15V | 5.7m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7665S2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7665s2tr1pbf-datasheets-8778.pdf | DirectFET™ Isometric SB | 4.826mm | 508μm | 3.9624mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 30W | 1 | FET General Purpose Power | R-XBCC-N2 | 3.8 ns | 6.4ns | 3.6 ns | 7.1 ns | 14.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 2.4W Ta 30W Tc | 58A | 0.062Ohm | 100V | N-Channel | 515pF @ 25V | 4 V | 62m Ω @ 8.9A, 10V | 5V @ 25μA | 4.1A Ta 14.4A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQB7N60TM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | yes | not_compliant | YES | FET General Purpose Power | Single | 600V | 3.13W Ta 142W Tc | 7.4A | N-Channel | 1430pF @ 25V | 1 Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD20AN06A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdd20an06a0-datasheets-8220.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 260.37mg | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 98ns | 33 ns | 23 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 90W Tc | TO-252AA | 8A | 0.02Ohm | 50 mJ | 60V | N-Channel | 950pF @ 25V | 20m Ω @ 45A, 10V | 4V @ 250μA | 8A Ta 45A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOD2C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod2c60-datasheets-0426.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 600V | 52W Tc | N-Channel | 304pF @ 100V | 3.3 Ω @ 500mA, 10V | 5V @ 250μA | 2A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF11C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-262-3 Full Pack, I2Pak | TO-262F | 2nF | 11A | 600V | 28W Tc | N-Channel | 2000pF @ 100V | 400mOhm @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8441-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8441f085-datasheets-0363.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 24ns | 17.9 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 28A | 0.0025Ohm | 947 mJ | 40V | N-Channel | 15000pF @ 25V | 2.5m Ω @ 80A, 10V | 4V @ 250μA | 28A Ta 80A Tc | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDB035AN06A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb035an06a0f085-datasheets-9824.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 93ns | 13 ns | 38 ns | 22A | SILICON | DRAIN | SWITCHING | 310W Tc | 0.0035Ohm | 625 mJ | 60V | N-Channel | 6400pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 22A Ta | 124nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFD213 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 4-DIP (0.300, 7.62mm) | 3 | 639.990485mg | 4 | EAR99 | unknown | 1W | DUAL | 4 | 1 | Single | 1 | Not Qualified | R-PDIP-T3 | 450mA | SILICON | 250V | TO-250AA | N-Channel | 140pF @ 25V | 2 Ω @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS36101L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms36101lf085-datasheets-9942.pdf | 8-PowerTDFN | 5 | 172.8mg | 8 | LIFETIME (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 45 ns | 7ns | 3 ns | 15 ns | 38A | 1.84V | SILICON | DRAIN | SWITCHING | 94W Tc | 100V | N-Channel | 3945pF @ 25V | 26m Ω @ 20A, 10V | 3V @ 250μA | 38A Tc | 84nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFHM4231TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-irfhm4231trpbf-datasheets-0140.pdf | 8-PowerTDFN | 3.3mm | 900μm | 5mm | Lead Free | 5 | 13 Weeks | No SVHC | 8 | EAR99 | Tin | No | DUAL | IRFHM4231 | Single | 1 | FET General Purpose Power | S-PDSO-N5 | 8.7 ns | 28ns | 5.9 ns | 12 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 25V | 25V | 1.6V | 2.7W Ta 29W Tc | 0.0046Ohm | 42 mJ | N-Channel | 1270pF @ 13V | 3.4m Ω @ 30A, 10V | 2.1V @ 35μA | 40A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF6718L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf6718l2tr1pbf-datasheets-8999.pdf | DirectFET™ Isometric L6 | 9.144mm | 508μm | 7.1mm | Lead Free | 7 | 17 Weeks | 13 | EAR99 | ULTRA-LOW RESISTANCE | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | Single | 4.3W | 1 | FET General Purpose Power | R-XBCC-N7 | 67 ns | 140ns | 53 ns | 47 ns | 61A | 20V | SILICON | DRAIN | SWITCHING | 4.3W Ta 83W Tc | 270A | 490A | 0.0007Ohm | 530 mJ | 25V | N-Channel | 6500pF @ 13V | 0.7m Ω @ 61A, 10V | 2.35V @ 150μA | 61A Ta 270A Tc | 96nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2N6661JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V |
