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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDB035AN06A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb035an06a0f085-datasheets-9824.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 93ns | 13 ns | 38 ns | 22A | SILICON | DRAIN | SWITCHING | 310W Tc | 0.0035Ohm | 625 mJ | 60V | N-Channel | 6400pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 22A Ta | 124nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD213 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 4-DIP (0.300, 7.62mm) | 3 | 639.990485mg | 4 | EAR99 | unknown | 1W | DUAL | 4 | 1 | Single | 1 | Not Qualified | R-PDIP-T3 | 450mA | SILICON | 250V | TO-250AA | N-Channel | 140pF @ 25V | 2 Ω @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS36101L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms36101lf085-datasheets-9942.pdf | 8-PowerTDFN | 5 | 172.8mg | 8 | LIFETIME (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 45 ns | 7ns | 3 ns | 15 ns | 38A | 1.84V | SILICON | DRAIN | SWITCHING | 94W Tc | 100V | N-Channel | 3945pF @ 25V | 26m Ω @ 20A, 10V | 3V @ 250μA | 38A Tc | 84nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM4231TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-irfhm4231trpbf-datasheets-0140.pdf | 8-PowerTDFN | 3.3mm | 900μm | 5mm | Lead Free | 5 | 13 Weeks | No SVHC | 8 | EAR99 | Tin | No | DUAL | IRFHM4231 | Single | 1 | FET General Purpose Power | S-PDSO-N5 | 8.7 ns | 28ns | 5.9 ns | 12 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 25V | 25V | 1.6V | 2.7W Ta 29W Tc | 0.0046Ohm | 42 mJ | N-Channel | 1270pF @ 13V | 3.4m Ω @ 30A, 10V | 2.1V @ 35μA | 40A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6718L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf6718l2tr1pbf-datasheets-8999.pdf | DirectFET™ Isometric L6 | 9.144mm | 508μm | 7.1mm | Lead Free | 7 | 17 Weeks | 13 | EAR99 | ULTRA-LOW RESISTANCE | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | Single | 4.3W | 1 | FET General Purpose Power | R-XBCC-N7 | 67 ns | 140ns | 53 ns | 47 ns | 61A | 20V | SILICON | DRAIN | SWITCHING | 4.3W Ta 83W Tc | 270A | 490A | 0.0007Ohm | 530 mJ | 25V | N-Channel | 6500pF @ 13V | 0.7m Ω @ 61A, 10V | 2.35V @ 150μA | 61A Ta 270A Tc | 96nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6729MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irf6729mtr1pbf-datasheets-8285.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | 3 | 5 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 104W | 1 | FET General Purpose Power | R-PDSO-G3 | 22 ns | 37ns | 15 ns | 20 ns | 31mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 104W Tc | 260 mJ | 30V | N-Channel | 6030pF @ 15V | 1.8m Ω @ 31A, 10V | 2.35V @ 150μA | 31A Ta 190A Tc | 63nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6673BZ-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6673bzf085-datasheets-0310.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 8 | LIFETIME (Last Updated: 1 day ago) | yes | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 14 ns | 16ns | 105 ns | 225 ns | 14.5A | 25V | SILICON | SWITCHING | 30V | 2.5W Ta | 900 pF | -30V | P-Channel | 4700pF @ 25V | 7.8m Ω @ 14.5A, 10V | 3V @ 250μA | 14.5A Ta | 124nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8107,LF | Toshiba Semiconductor and Storage | $2.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 970pF | 6A | 30V | 700mW Ta | P-Channel | 970pF @ 10V | 28mOhm @ 3A, 10V | 2V @ 100μA | 6A Ta | 22nC @ 10V | 28 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8832-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8832f085-datasheets-9978.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | No | e3 | Tin (Sn) | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 73ns | 38 ns | 54 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.0022Ohm | 1246 mJ | 30V | N-Channel | 11400pF @ 15V | 1.9m Ω @ 80A, 10V | 3V @ 250μA | 34A Ta | 265nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD16AN08A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd16an08a0f085-datasheets-9731.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 260.37mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 135W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 54ns | 22 ns | 32 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 135W Tc | TO-252AA | 9A | 95 mJ | 75V | N-Channel | 1874pF @ 25V | 16m Ω @ 50A, 10V | 4V @ 250μA | 9A Ta 50A Tc | 47nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8342TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8342trpbf-datasheets-9724.pdf | 8-PowerTDFN | Lead Free | 5 | 10 Weeks | No SVHC | 13mOhm | 8 | EAR99 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 8.1 ns | 30ns | 5.6 ns | 7.6 ns | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.8V | 2.6W Ta 20W Tc | 20A | N-Channel | 560pF @ 25V | 16m Ω @ 17A, 10V | 2.35V @ 25μA | 10A Ta | 7.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8442-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb8442f085-datasheets-0008.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 33 Weeks | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 254W | 1 | FET General Purpose Power | R-PSSO-G2 | 19.5 ns | 19.3ns | 17.2 ns | 57 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 254W Tc | 28A | 0.0029Ohm | 720 mJ | 40V | N-Channel | 12200pF @ 25V | 5m Ω @ 80A, 10V | 4V @ 250μA | 28A Ta | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS5690-NBBM009A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds5690-datasheets-4093.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | ACTIVE (Last Updated: 1 week ago) | 1W | 7A | 60V | N-Channel | 1107pF @ 30V | 28m Ω @ 7A, 10V | 4V @ 250μA | 7A Ta | 32nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3017SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3017sfg7-datasheets-0058.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | Lead Free | 72.007789mg | 8 | EAR99 | POWERDI3333-8 | e3 | Matte Tin (Sn) | 1 | Single | 940mW | 150°C | 7.5 ns | 15.4ns | 36.8 ns | 45.6 ns | -11.5A | 25V | 30V | -3V | 940mW Ta | -30V | P-Channel | 2246pF @ 15V | 10m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 41nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8443-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8443f085-datasheets-0017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 188W | 1 | FET General Purpose Power | R-PSSO-G2 | 18.4 ns | 17.9ns | 13.5 ns | 55 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 188W Tc | 80A | 40V | N-Channel | 9310pF @ 25V | 5.5m Ω @ 80A, 10V | 4V @ 250μA | 25A Ta | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFME2P823ZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdfme2p823zt-datasheets-9815.pdf | 6-UFDFN Exposed Pad | 1.6mm | 550μm | 1.6mm | 6 | No SVHC | 6 | EAR99 | ESD PROTECTION | No | DUAL | Single | 1.3W | 1 | Other Transistors | 4.7 ns | 4.8ns | 16 ns | 33 ns | 2.6A | 8V | SILICON | DRAIN | SWITCHING | 20V | -600mV | 1.4W Ta | 2.3A | 75 pF | -20V | P-Channel | 405pF @ 10V | -600 mV | 142m Ω @ 2.3A, 4.5V | 1V @ 250μA | 2.6A Ta | 7.7nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75852G3-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-247-3 | 6.39g | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | No | Single | 500W | FET General Purpose Power | 22 ns | 151ns | 107 ns | 82 ns | 75A | 20V | 500W Tc | 150V | N-Channel | 7690pF @ 25V | 16m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 480nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | 14 | 18 Weeks | 14 | EAR99 | No | 8541.29.00.75 | DUAL | 4 | 460mA | 20V | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 0.46A | 2A | 3.5Ohm | 10 pF | 10ns | 10ns | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw23n60ege3-datasheets-0102.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-247AD | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8896-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8896f085-datasheets-0074.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | 260 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 102ns | 44 ns | 58 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 19A | 0.0068Ohm | 74 mJ | 30V | N-Channel | 2525pF @ 15V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 19A Ta 93A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSH207,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | SC-74, SOT-457 | 3.1mm | 1mm | 1.7mm | Lead Free | 4.535924g | No SVHC | 6 | Tin | No | Single | 417mW | 6-TSOP | 500pF | 2 ns | 4.5ns | 4.5 ns | 45 ns | -1.52A | 8V | -12V | -12V | 12V | -600mV | 417mW Ta | 120mOhm | 12V | P-Channel | 500pF @ 9.6V | -600 mV | 120mOhm @ 1A, 4.5V | 600mV @ 1mA | 1.52A Ta | 8.8nC @ 4.5V | 120 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FCB20N60-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcb20n60f085-datasheets-9961.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | FCB20N60 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 341W Tc | 20A | 0.198Ohm | 480 mJ | N-Channel | 3080pF @ 25V | 198m Ω @ 20A, 10V | 5V @ 250μA | 20A Tc | 102nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76645S3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-hufa76645s3stf085-datasheets-9691.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 1.31247g | 15mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 106ns | 175 ns | 69 ns | 75A | 16V | SILICON | DRAIN | 310W Tc | 100V | N-Channel | 4400pF @ 25V | 14m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 153nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-GE3 | Vishay Siliconix | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | Lead Free | 15 Weeks | 3 | yes | EAR99 | Tin | No | 260 | 30 | 3.1W | 1 | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | Single | 60V | 3.1W Ta 104.2W Tc | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76419D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-hufa76419d3st-datasheets-9663.pdf | 60V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 260.37mg | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 75W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.5 ns | 35ns | 50 ns | 50 ns | 20A | 16V | SILICON | DRAIN | SWITCHING | 75W Tc | TO-252AA | 60V | N-Channel | 900pF @ 25V | 37m Ω @ 20A, 10V | 3V @ 250μA | 20A Tc | 27.5nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| FDS2672-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds2672f085-datasheets-9655.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 22 ns | 10ns | 10 ns | 35 ns | 3.9A | 20V | SILICON | SWITCHING | 2.5W Ta | 0.07Ohm | 45 pF | 200V | N-Channel | 2535pF @ 100V | 70m Ω @ 3.9A, 10V | 4V @ 250μA | 3.9A Ta | 46nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD4685-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd4685f085-datasheets-9753.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 260.37mg | 3 | ACTIVE (Last Updated: 2 days ago) | yes | ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | FDD4685 | Single | 69W | 1 | Other Transistors | R-PSSO-G2 | 8 ns | 15ns | 14 ns | 34 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 40V | 83W Tc | 40A | 0.027Ohm | -40V | P-Channel | 2380pF @ 20V | 27m Ω @ 8.4A, 10V | 3V @ 250μA | 8.4A Ta 32A Tc | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8337TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8337trpbf-datasheets-9603.pdf | 8-PowerTDFN | Lead Free | 5 | 17 Weeks | No SVHC | 9.4mOhm | 8 | EAR99 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 9 ns | 11ns | 5.6 ns | 9.9 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta 25W Tc | 35A | 94A | 30V | N-Channel | 755pF @ 15V | 12.4m Ω @ 12A, 10V | 2.35V @ 25μA | 12A Ta | 8.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8235TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8235trpbf-datasheets-9675.pdf | 8-PowerTDFN | Lead Free | 5 | 10 Weeks | No SVHC | 6.2mOhm | 8 | EAR99 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 7.9 ns | 16ns | 5.2 ns | 7.5 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 3W Ta 30W Tc | 50A | 240A | 25V | N-Channel | 1040pF @ 10V | 7.7m Ω @ 20A, 10V | 2.35V @ 25μA | 16A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V |
