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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDMA7628 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdma7628-datasheets-9396.pdf | 6-WDFN Exposed Pad | 2mm | 750μm | 2mm | 6 | 30mg | 6 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 1.9W | 1 | FET General Purpose Power | 9 ns | 11ns | 11 ns | 37 ns | 9.4A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 0.0145Ohm | 185 pF | 20V | N-Channel | 1680pF @ 10V | 14.5m Ω @ 9.4A, 4.5V | 1V @ 250μA | 9.4A Ta | 17.5nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SIB410DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib410dkt1ge3-datasheets-9115.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 15 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 6 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | S-XDSO-C3 | 6 ns | 10ns | 10 ns | 20 ns | 9A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 2.5W Ta 13W Tc | 9A | 20A | 0.042Ohm | 30V | N-Channel | 560pF @ 15V | 42m Ω @ 3.8A, 4.5V | 1V @ 250μA | 9A Tc | 15nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| SI4038DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4038dyt1ge3-datasheets-9275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 1 | 13 ns | 14ns | 10 ns | 14 ns | 42.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Ta 7.8W Tc | 0.0024Ohm | 40V | N-Channel | 4070pF @ 20V | 2.4m Ω @ 15A, 10V | 2.1V @ 250μA | 42.5A Tc | 87nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDD1600N10ALZD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-fdd1600n10alzd-datasheets-9147.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 6.73mm | 2.39mm | 6.22mm | 4 | 260.37mg | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | Single | 1 | FET General Purpose Power | R-PSSO-G4 | 7 ns | 2ns | 2 ns | 13 ns | 6.8A | 20V | SILICON | DRAIN | SWITCHING | 14.9W Tc | 0.16Ohm | 5.08 mJ | 100V | N-Channel | 225pF @ 50V | 160m Ω @ 3.4A, 10V | 2.8V @ 250μA | 6.8A Tc | 3.61nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| UPA2764T1A-E2-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2764t1ae2ay-datasheets-9335.pdf | 8-PowerVDFN | 16 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 8 | 1.5W | 1 | FET General Purpose Power | 47 ns | 160ns | 320 ns | 310 ns | 130A | 20V | Single | 30V | 1.5W Ta 83W Tc | N-Channel | 7930pF @ 10V | 2.45m Ω @ 35A, 4.5V | 130A Ta | 180nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXL02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDB8132_F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb8132f085-datasheets-9345.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 341W Tc | 80A | 0.0016Ohm | 1904 mJ | N-Channel | 14100pF @ 15V | 1.6m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 350nC @ 13V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| HUF76419S3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | Tin | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 5.9 ns | 7.3ns | 4.6 ns | 25 ns | 29A | 16V | SILICON | DRAIN | SWITCHING | 100W Tc | 121 mJ | 60V | N-Channel | 870pF @ 25V | 35m Ω @ 29A, 10V | 3V @ 250μA | 29A Tc | 28.5nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| FCPF380N60E-F152 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcpf380n60ef152-datasheets-9217.pdf | TO-220-3 Full Pack | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 31W Tc | TO-220AB | 30.6A | 211.6 mJ | N-Channel | 1770pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 45nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR646DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir646dpt1ge3-datasheets-9225.pdf | PowerPAK® SO-8 | unknown | 40V | 5W Ta 54W Tc | N-Channel | 2230pF @ 20V | 3.8m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R225C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r225c7atma1-datasheets-9240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 20 Weeks | 3.949996g | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 63W | 1 | R-PSSO-G2 | 9 ns | 6ns | 10 ns | 48 ns | 11A | 20V | 650V | SILICON | DRAIN | SWITCHING | 63W Tc | TO-252 | 0.225Ohm | 48 mJ | 650V | N-Channel | 996pF @ 400V | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 11A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR7446PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7446trpbf-datasheets-5703.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 13ns | 20 ns | 32 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 3V | 98W Tc | TO-252AA | 520A | 40V | N-Channel | 3150pF @ 25V | 3.9m Ω @ 56A, 10V | 3.9V @ 100μA | 56A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| UPA2739T1A-E2-AY | Renesas Electronics America | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2739t1ae2ay-datasheets-9265.pdf | 8-PowerVDFN | 5 | 16 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 8 | 1.5W | 1 | Other Transistors | R-PDSO-N5 | 27 ns | 140ns | 490 ns | 310 ns | 85A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.5W Ta | P-Channel | 6050pF @ 10V | 5.7m Ω @ 23A, 4.5V | 85A Ta | 153nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| UPA2766T1A-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2766t1ae2ay-datasheets-3582.pdf | 8-PowerVDFN | Lead Free | 16 Weeks | 8 | No | 50 ns | 160ns | 365 ns | 380 ns | 130A | 20V | 30V | 1.5W Ta 83W Tc | N-Channel | 10850pF @ 10V | 1.82m Ω @ 39A, 4.5V | 130A Ta | 257nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | BOTTOM | WIRE | 260 | 2 | 1 | Single | 40 | 725mW | 1 | FET General Purpose Powers | 1.1A | 20V | SILICON | AMPLIFIER | 1.7V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 60V | N-Channel | 50pF @ 25V | 1.7 V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFS7434-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs7434trl7pp-datasheets-2144.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | Lead Free | No SVHC | 7 | EAR99 | No | Single | 245W | 1 | FET General Purpose Power | 23 ns | 125ns | 85 ns | 107 ns | 240A | 20V | 40V | 3V | 245W Tc | N-Channel | 10250pF @ 25V | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 315nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMT21EN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmt21en135-datasheets-8897.pdf | TO-261-4, TO-261AA | 4 | 2013-06-14 00:00:00 | 30V | 820mW Ta 8.33W Tc | N-Channel | 588pF @ 15V | 21m Ω @ 7.4A, 10V | 2.5V @ 250μA | 7.4A Ta | 14.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76633S3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf76633s3stf085-datasheets-9140.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | EAR99 | e3 | MATTE TIN | GULL WING | 260 | Single | 30 | 183W | 1 | R-PSSO-G2 | 8 ns | 16ns | 6 ns | 46 ns | 39A | 16V | SILICON | DRAIN | SWITCHING | 183W Tj | 267 mJ | 100V | N-Channel | 1810pF @ 25V | 35m Ω @ 39A, 10V | 3V @ 250μA | 39A Tc | 63nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPB65R045C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r045c7atma1-datasheets-9154.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 20 Weeks | 3 | yes | HIGH RELIABILITY | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 227W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 14ns | 7 ns | 82 ns | 46A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 227W Tc | 0.045Ohm | 249 mJ | N-Channel | 4340pF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 46A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PMN35EN,125 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn35en125-datasheets-8842.pdf | SC-74, SOT-457 | 6 | No | 1.25W | 1 | 6-TSOP | 334pF | 4 ns | 15ns | 24 ns | 53 ns | 5.1A | 20V | 30V | 30V | 500mW Ta | N-Channel | 334pF @ 15V | 31mOhm @ 5.1A, 10V | 2.5V @ 250μA | 5.1A Ta | 9.3nC @ 10V | 31 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76639S3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf76639s3st-datasheets-9902.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 26mOhm | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | ULTRA LOW RESISTANCE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | R-PSSO-G2 | 207ns | 136 ns | 83 ns | 51A | SILICON | DRAIN | SWITCHING | 180W Tc | 50A | 100V | N-Channel | 2400pF @ 25V | 26m Ω @ 51A, 10V | 3V @ 250μA | 51A Tc | 86nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| PMZB790SN,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/nexperiausainc-pmzb790sn315-datasheets-9000.pdf | 3-XFDFN | 3 | 3 | 1 | Single | 2 ns | 4ns | 2.2 ns | 5 ns | 650mA | 2V | 60V | 360mW Ta 2.7W Tc | 60V | N-Channel | 35pF @ 30V | 940m Ω @ 300mA, 10V | 3V @ 250μA | 650mA Ta | 1.37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMG45UN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmg45un115-datasheets-8881.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 20V | 375mW Ta 4.35W Tc | N-Channel | 184pF @ 10V | 55m Ω @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 3.3nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3006SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdms3006sdc-datasheets-9018.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 90mg | 8 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | FLAT | Single | 89W | 1 | FET General Purpose Power | R-PDSO-F5 | 16 ns | 5.9ns | 3.5 ns | 39 ns | 34A | 20V | SILICON | DRAIN | SWITCHING | 3.3W Ta 89W Tc | MO-240AA | 49A | 200A | 30V | N-Channel | 5725pF @ 15V | 1.9m Ω @ 30A, 10V | 3V @ 1mA | 34A Ta | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDMS3008SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdms3008sdc-datasheets-9041.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 90mg | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | FLAT | Single | 78W | 1 | FET General Purpose Power | R-PDSO-F5 | 15 ns | 4.7ns | 3 ns | 33 ns | 29A | 20V | SILICON | DRAIN | SWITCHING | 3.3W Ta 78W Tc | MO-240AA | 49A | 200A | 0.0026Ohm | 30V | N-Channel | 4520pF @ 15V | 2.6m Ω @ 28A, 10V | 3V @ 1mA | 29A Ta | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PMZB300XN,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmzb300xn315-datasheets-8975.pdf | 3-XFDFN | 3 | No | 3 | 5 ns | 11ns | 6 ns | 11 ns | 1A | 12V | 20V | 360mW Ta 2.7W Tc | N-Channel | 51pF @ 20V | 380m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 1A Ta | 0.94nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN27XPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/nexperiausainc-pmn27xpe115-datasheets-8875.pdf | SC-74, SOT-457 | 6 | No | 6 | 1 | Single | 15 ns | 22ns | 29 ns | 37 ns | 4.4A | -1V | -20V | 20V | 530mW Ta 8.33W Tc | -20V | P-Channel | 1770pF @ 10V | 30m Ω @ 3A, 4.5V | 1.25V @ 250μA | 4.4A Ta | 22.5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDME430NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdme430nt-datasheets-9057.pdf | 6-PowerUFDFN | 1.6mm | 500μm | 1.6mm | 3 | 12 Weeks | 30mg | 6 | yes | EAR99 | No | 8541.29.00.95 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.1W | 1 | FET General Purpose Power | S-PDSO-N3 | 7 ns | 3ns | 3.3 ns | 19 ns | 6A | 12V | SILICON | DRAIN | SWITCHING | 2.1W Ta | 6A | 0.04Ohm | 75 pF | 30V | N-Channel | 760pF @ 15V | 40m Ω @ 6A, 4.5V | 1.5V @ 250μA | 6A Ta | 9nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| PMV30XN,215 | NXP USA Inc. | $0.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmv30xn215-datasheets-9067.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | e3 | Tin (Sn) | IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | FET General Purpose Power | R-PDSO-G3 | 2013-06-14 00:00:00 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 380mW Ta | TO-236AB | 3.2A | 0.035Ohm | N-Channel | 420pF @ 15V | 35m Ω @ 3.2A, 4.5V | 1.5V @ 250μA | 3.2A Ta | 7.4nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| HUF76629D3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf76629d3stf085-datasheets-9075.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 260.36202mg | 3 | EAR99 | e3 | MATTE TIN | GULL WING | 260 | Single | 30 | 1 | R-PSSO-G2 | 5.9 ns | 12ns | 5 ns | 38 ns | 20A | 16V | SILICON | DRAIN | SWITCHING | 150W Tc | 100V | N-Channel | 1280pF @ 25V | 52m Ω @ 20A, 10V | 3V @ 250μA | 20A Tc | 43nC @ 10V | 4.5V 10V | ±16V |
