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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDS4465-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds4465f085-datasheets-9867.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 20 ns | 24ns | 140 ns | 300 ns | 13.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | 20V | 2.5W Ta | 50A | P-Channel | 8237pF @ 10V | 8.5m Ω @ 13.5A, 4.5V | 1.5V @ 250μA | 13.5A Ta | 120nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| FDB8444-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8444f085-datasheets-9833.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 167W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 78ns | 15 ns | 48 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 167W Tc | 0.0055Ohm | 40V | N-Channel | 8035pF @ 25V | 5.5m Ω @ 70A, 10V | 4V @ 250μA | 70A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| 2N6660 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | Lead Free | 3Ohm | 3 | No | 11A | 60V | 1 | Single | 6.25W | 1 | TO-205AD (TO-39) | 50pF | 1.1A | 20V | 60V | 725mW Ta 6.25W Tc | 3Ohm | 60V | N-Channel | 50pF @ 25V | 3Ohm @ 1A, 10V | 2V @ 1mA | 990mA Tc | 3 Ω | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8860-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8860f085-datasheets-9709.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 254W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 213ns | 49 ns | 79 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 254W Tc | 0.0027Ohm | 947 mJ | 30V | N-Channel | 12585pF @ 15V | 2.3m Ω @ 80A, 10V | 3V @ 250μA | 80A Tc | 214nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| HUFA76645S3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-hufa76645s3stf085-datasheets-9691.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 1.31247g | 15mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 106ns | 175 ns | 69 ns | 75A | 16V | SILICON | DRAIN | 310W Tc | 100V | N-Channel | 4400pF @ 25V | 14m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 153nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-GE3 | Vishay Siliconix | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | Lead Free | 15 Weeks | 3 | yes | EAR99 | Tin | No | 260 | 30 | 3.1W | 1 | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | Single | 60V | 3.1W Ta 104.2W Tc | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS38N60L | Vishay Siliconix | $75.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | No | 1 | Single | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 540W Tc | 150mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIS334DN-T1-GE3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis334dnt1ge3-datasheets-9524.pdf | PowerPAK® 1212-8 | 5 | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 9 ns | 10ns | 8 ns | 15 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 50W Tc | 50A | 30V | N-Channel | 640pF @ 15V | 11.3m Ω @ 10A, 10V | 2.4V @ 250μA | 20A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| VP0808B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | EAR99 | e3 | MATTE TIN | BOTTOM | WIRE | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | 11 ns | 30ns | 20 ns | 20 ns | -3A | 20V | SILICON | DRAIN | SWITCHING | 80V | 6.25W Ta | 0.88A | 5Ohm | 25 pF | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFHM9391TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm9391trpbf-datasheets-9540.pdf | 8-PowerTDFN | Lead Free | 5 | 10 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 1 | 2.6W | 1 | Other Transistors | S-PDSO-F5 | 11 ns | 27ns | 60 ns | 72 ns | 11A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -1.8V | 2.6W Ta | 90A | 0.0225Ohm | 75 mJ | -30V | P-Channel | 1543pF @ 25V | 14.6m Ω @ 11A, 10V | 2.4V @ 25μA | 11A Ta | 16nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| VP0300B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | 13 Weeks | 3 | 800mW | Single | 6.25W | 1 | 150pF | -3A | 20V | 30V | 2.5Ohm | -30V | P-Channel | 150pF @ 15V | 2.5Ohm @ 1A, 12V | 4.5V @ 1mA | 320mA Ta | 2.5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP26N60L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | TO-247-3 | 600V | 470W Tc | N-Channel | 5020pF @ 25V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMT200EN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-261-4, TO-261AA | YES | 4 | FET General Purpose Power | Single | 100V | 800mW Ta 8.3W Tc | 1.8A | N-Channel | 475pF @ 80V | 235m Ω @ 1.5A, 10V | 2.5V @ 250μA | 1.8A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8334TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8334trpbf-datasheets-9565.pdf | 8-PowerTDFN | Lead Free | 5 | 17 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 1 | 2.7W | 1 | FET General Purpose Power | S-PDSO-F5 | 8.3 ns | 14ns | 4.6 ns | 7 ns | 13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.8V | 2.7W Ta 28W Tc | 25A | 0.009Ohm | 35 mJ | N-Channel | 1180pF @ 10V | 9m Ω @ 20A, 10V | 2.35V @ 25μA | 13A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2N6660JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PMV170UN,215 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmv170un215-datasheets-8970.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 20V | 325mW Ta 1.14W Tc | N-Channel | 83pF @ 10V | 165m Ω @ 1A, 4.5V | 1V @ 250μA | 1A Ta | 1.65nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8330TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8330trpbf-datasheets-9584.pdf | 8-PowerTDFN | Lead Free | 5 | 17 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 1 | 2.7W | 1 | FET General Purpose Power | S-PDSO-F5 | 9.2 ns | 15ns | 5.7 ns | 10 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.7W Ta 33W Tc | 55A | 0.0066Ohm | 42 mJ | 30V | N-Channel | 1450pF @ 25V | 6.6m Ω @ 20A, 10V | 2.35V @ 25μA | 16A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| VP0808B-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | No | 8541.29.00.75 | BOTTOM | WIRE | 1 | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 6.25W Ta | 0.88A | 3A | 5Ohm | 25 pF | P-Channel | 150pF @ 25V | 60ns | 55ns | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIS448DN-T1-GE3 | Vishay Siliconix | $3.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis448dnt1ge3-datasheets-9595.pdf | PowerPAK® 1212-8 | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | FET General Purpose Powers | S-PDSO-C5 | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1575pF @ 15V | 5.6m Ω @ 10A, 10V | 2.3V @ 250μA | 35A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIS330DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis330dnt1ge3-datasheets-9599.pdf | PowerPAK® 1212-8 | 3.15mm | 1.12mm | 3.15mm | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 19 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1300pF @ 15V | 5.6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFHM8228TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8228trpbf-datasheets-9613.pdf | 8-PowerTDFN | Lead Free | 5 | 10 Weeks | No SVHC | 4.2mOhm | 8 | EAR99 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 11 ns | 22ns | 6.2 ns | 13 ns | 19A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.8V | 2.8W Ta 34W Tc | 65A | 260A | 50 mJ | N-Channel | 1667pF @ 10V | 5.2m Ω @ 20A, 10V | 2.35V @ 25μA | 19A Ta | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDD6637-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/onsemiconductor-fdd6637f085-datasheets-9642.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 35V | 35V | 68W Tc | 21A | 0.0116Ohm | 61 mJ | P-Channel | 2370pF @ 20V | 11.6m Ω @ 14A, 10V | 3V @ 250μA | 63nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMT760EN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmt760en135-datasheets-8998.pdf | TO-261-4, TO-261AA | 4 | 100V | 800mW Ta 6.2W Tc | N-Channel | 160pF @ 80V | 950m Ω @ 800mA, 10V | 2.5V @ 250μA | 900mA Ta | 3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS40N60K | Vishay Siliconix | $5.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps40n60kpbf-datasheets-5634.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | 38.000013g | 3 | No | 1 | Single | 570W | SUPER-247™ (TO-274AA) | 7.97nF | 47 ns | 110ns | 60 ns | 97 ns | 40A | 30V | 600V | 570W Tc | 130mOhm | 600V | N-Channel | 7970pF @ 25V | 130mOhm @ 24A, 10V | 5V @ 250μA | 40A Tc | 330nC @ 10V | 130 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIR482DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir482dpt1ge3-datasheets-9469.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | R-PDSO-C5 | 35A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5W Ta 27.7W Tc | 70A | 0.0075Ohm | 20 mJ | N-Channel | 1575pF @ 15V | 5.6m Ω @ 20A, 10V | 2.3V @ 250μA | 35A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFP21N60L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irfp21n60l-datasheets-9473.pdf | TO-247-3 | TO-247-3 | 600V | 330W Tc | N-Channel | 4000pF @ 25V | 320mOhm @ 13A, 10V | 5V @ 250μA | 21A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF260N60E-F152 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf260n60ef152-datasheets-9475.pdf | TO-220-3 Full Pack | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 36W Tc | TO-220AB | 45A | 292.5 mJ | N-Channel | 2500pF @ 25V | 260m Ω @ 7.5A, 10V | 3.5V @ 250μA | 15A Tc | 62nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP22N60K | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp22n60kpbf-datasheets-2968.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | No | 1 | Single | 370W | TO-247-3 | 3.57nF | 26 ns | 99ns | 37 ns | 48 ns | 22A | 30V | 600V | 370W Tc | 280mOhm | 600V | N-Channel | 3570pF @ 25V | 280mOhm @ 13A, 10V | 5V @ 250μA | 22A Tc | 150nC @ 10V | 280 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFD113 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd113pbf-datasheets-5477.pdf | 4-DIP (0.300, 7.62mm) | 2 | 4 | EAR99 | unknown | DUAL | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDIP-T2 | 800mA | SILICON | DRAIN | SWITCHING | 60V | 60V | 1W Tc | 0.8A | 0.8Ohm | 25 pF | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660-2 | Vishay Siliconix | $25.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | No | 725mW | 1 | TO-205AD (TO-39) | 50pF | 990mA | 20V | 60V | 725mW Ta 6.25W Tc | N-Channel | 50pF @ 25V | 3Ohm @ 1A, 10V | 2V @ 1mA | 990mA Tc | 3 Ω | 5V 10V | ±20V |
