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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SK4066-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | TO-220-3, Short Tab | 3 | No | Single | 1.65W | 80 ns | 630ns | 750 ns | 860 ns | 100A | 20V | 1.65W Ta 90W Tc | 60V | N-Channel | 12500pF @ 20V | 4.7m Ω @ 50A, 10V | 100A Ta | 220nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3745LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk3745ls1e-datasheets-4044.pdf | TO-220-3 Full Pack | 3 | 3 | HIGH RELIABILITY | No | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 3 | Single | 35W | 1 | 12 ns | 37ns | 59 ns | 152 ns | 2A | 20V | SILICON | ISOLATED | SWITCHING | 1500V | 2W Ta 35W Tc | TO-220AB | 2A | 4A | 42 mJ | 1.5kV | N-Channel | 380pF @ 30V | 13 Ω @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3746 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk37461e-datasheets-4192.pdf | TO-3P-3, SC-65-3 | 3 | 3 | No | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 3 | Single | 2.5W | 1 | 12 ns | 37ns | 59 ns | 152 ns | 2A | 20V | 1.5kV | SILICON | SWITCHING | 1500V | 2.5W Ta 110W Tc | 2A | 4A | 42 mJ | 1.5kV | N-Channel | 380pF @ 30V | 3.5 V | 13 Ω @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4089LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-2sk4089ls-datasheets-4053.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | HIGH RELIABILITY | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 3 | Single | 2W | 1 | 27 ns | 66ns | 45 ns | 140 ns | 12A | 30V | SILICON | SWITCHING | 2W Ta 40W Tc | TO-220AB | 48A | 0.72Ohm | 84 mJ | 650V | N-Channel | 1200pF @ 30V | 720m Ω @ 6A, 10V | 8.5A Tc | 45.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0304pe3-datasheets-4002.pdf | TO-220-3 | 10.4902mm | 15.494mm | 4.6482mm | Lead Free | 4.3mOhm | 3 | No | Single | 166W | 1 | TO-220AB | 4.5nF | 15 ns | 12ns | 22 ns | 50 ns | 85A | 20V | 30V | 3.75W Ta 166W Tc | 4.3mOhm | 30V | N-Channel | 4500pF @ 25V | 4.3mOhm @ 30A, 10V | 3V @ 250μA | 85A Tc | 90nC @ 10V | 4.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R0-60ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn3r060es127-datasheets-4014.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 20 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 306W | 1 | 31 ns | 26ns | 22 ns | 77 ns | 100A | 20V | 60V | SILICON | DRAIN | SWITCHING | 306W Tc | 824A | 800 mJ | 60V | N-Channel | 8079pF @ 30V | 3m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ652-RA11 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | TO-220-3 Full Pack | compliant | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 60V | P-Channel | 4360pF @ 20V | 38m Ω @ 14A, 10V | 28A Ta | 80nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN45EN,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-pmn45en135-datasheets-3981.pdf | SC-74, SOT-457 | 6 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1.75W | 1 | FET General Purpose Power | Not Qualified | 5.2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.75W Tc | 0.04Ohm | N-Channel | 495pF @ 25V | 40m Ω @ 3A, 10V | 2V @ 1mA | 5.2A Tc | 6.1nC @ 4.5V | 4.5V 10V | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3704 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk3704-datasheets-4025.pdf | TO-220-3 Full Pack | Lead Free | 3 | Unknown | 14mOhm | 3 | yes | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 3 | Single | 30W | 1 | 26 ns | 175ns | 210 ns | 265 ns | 45A | 20V | SILICON | ISOLATED | SWITCHING | 2.6V | 2W Ta 30W Tc | TO-220AB | 180A | 60V | N-Channel | 3500pF @ 20V | 14m Ω @ 23A, 10V | 45A Ta | 67nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PHT6N06LT,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 8.3W Tc | 2.5A | 10A | 0.15Ohm | 50 pF | 15 mJ | N-Channel | 330pF @ 25V | 76ns | 77ns | 150m Ω @ 5A, 5V | 2V @ 1mA | 2.5A Ta | 4.5nC @ 5V | 5V | ±13V | |||||||||||||||||||||||||||||||||||||||||||||
| SUD50P10-43-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p1043e3-datasheets-3907.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 8.3W | 1 | Other Transistors | R-PSSO-G2 | 30 ns | 115ns | 60 ns | 80 ns | 9.4A | 20V | SILICON | DRAIN | 100V | 8.3W Ta 136W Tc | 50A | 80 mJ | -100V | P-Channel | 5230pF @ 50V | 43m Ω @ 9.4A, 10V | 4V @ 250μA | 38A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUM90P10-19-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90p1019e3-datasheets-3910.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 13.6W | 1 | Other Transistors | R-PSSO-G2 | 30 ns | 720ns | 610 ns | 125 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 100V | 13.6W Ta 375W Tc | 90A | 90A | -100V | P-Channel | 12000pF @ 50V | 19m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFH8318TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-irfh8318trpbf-datasheets-5635.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | No SVHC | 3.1MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) | 3.18nF | 15 ns | 33ns | 12 ns | 18 ns | 27A | 20V | 30V | 1.8V | 24 ns | 3.1mOhm | 30V | N-Channel | 3180pF @ 10V | 1.8 V | 3.1mOhm @ 20A, 10V | 2.35V @ 50μA | 27A Ta 120A Tc | 41nC @ 10V | 3.1 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| PMR290XN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmr290xn115-datasheets-3913.pdf | SC-75, SOT-416 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 530mW Tc | 0.97A | 0.35Ohm | N-Channel | 34pF @ 20V | 350m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 970mA Tc | 0.72nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60N06-12P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60n0612pge3-datasheets-3346.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 6.000006g | 3 | EAR99 | No | 3 | 1 | Single | 3.25W | 1 | FET General Purpose Power | 11 ns | 11ns | 8 ns | 16 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.25W Ta 100W Tc | TO-220AB | 80A | 80 mJ | N-Channel | 1970pF @ 30V | 12m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PMN40LN,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/nxpusainc-pmn40ln135-datasheets-3897.pdf | SC-74, SOT-457 | 6 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.75W Tc | 5.4A | 0.038Ohm | N-Channel | 555pF @ 25V | 38m Ω @ 2.5A, 10V | 2V @ 1mA | 5.4A Tc | 13.8nC @ 10V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6215-75C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/nexperiausainc-buk621575c118-datasheets-3843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | Tin | 3 | Single | 128W | 16.6 ns | 37.4ns | 69 ns | 126 ns | 57A | 20V | 75V | 128W Tc | 75V | N-Channel | 3900pF @ 25V | 15m Ω @ 15A, 10V | 2.8V @ 1mA | 57A Tc | 61.8nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N15-18P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n1518pe3-datasheets-3967.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 18mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | FET General Purpose Power | 15 ns | 10ns | 8 ns | 25 ns | 90A | 20V | 150V | SILICON | DRAIN | SWITCHING | 2.5V | 3.75W Ta 375W Tc | TO-220AB | N-Channel | 4180pF @ 75V | 18m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PMN28UN,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-pmn28un135-datasheets-3964.pdf | SC-74, SOT-457 | 3.1mm | 1mm | 1.7mm | Lead Free | 6 | 4.535924g | No SVHC | 6 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 6 | Single | 30 | 1.75W | 1 | 8 ns | 15ns | 15 ns | 53 ns | 5.7A | 8V | 12V | SILICON | SWITCHING | 700mV | 1.75W Tc | 0.04Ohm | 12V | N-Channel | 740pF @ 10V | 34m Ω @ 2A, 4.5V | 700mV @ 1mA | 5.7A Tc | 10.1nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| IRFH8330TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh8330trpbf-datasheets-7208.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | No SVHC | 6.6MOhm | 8 | No | 3.3W | Single | 3.3W | 1 | PQFN (5x6) | 1.45nF | 9.2 ns | 15ns | 5.7 ns | 10 ns | 17A | 20V | 30V | 1.8V | 21 ns | 6.6mOhm | 30V | N-Channel | 1450pF @ 25V | 1.8 V | 6.6mOhm @ 20A, 10V | 2.35V @ 25μA | 17A Ta 56A Tc | 20nC @ 10V | 6.6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK6207-55C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-buk620755c118-datasheets-3810.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 3 | Single | 128W | 1 | R-PSSO-G2 | 18 ns | 44ns | 78 ns | 165 ns | 90A | 16V | 55V | SILICON | DRAIN | SWITCHING | 158W Tc | 55V | N-Channel | 5160pF @ 25V | 7.8m Ω @ 25A, 10V | 2.8V @ 1mA | 90A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMZ270XN,315 | Nexperia USA Inc. | $1.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmz270xn315-datasheets-3873.pdf | SC-101, SOT-883 | Lead Free | 3 | 340MOhm | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | BOTTOM | 3 | Single | 2.5W | 1 | FET General Purpose Power | 5 ns | 11ns | 6 ns | 11 ns | 2.15A | 12V | 20V | SILICON | DRAIN | SWITCHING | 2.5W Tc | 20V | N-Channel | 34pF @ 20V | 340m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 2.15A Tc | 0.72nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP100,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-bsp100135-datasheets-3876.pdf | TO-261-4, TO-261AA | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 4.535924g | No SVHC | 4 | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 4 | 40 | 8.3W | 1 | FET General Purpose Power | 6 ns | 8ns | 15 ns | 21 ns | 6A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8.3W Tc | 3.5A | 30V | N-Channel | 250pF @ 20V | 75ns | 2 V | 100m Ω @ 2.2A, 10V | 2.8V @ 1mA | 3.2A Ta | 6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PMN38EN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn38en135-datasheets-3900.pdf | SC-74, SOT-457 | 6 | 2013-06-14 00:00:00 | 30V | 1.75W Tc | N-Channel | 495pF @ 25V | 38m Ω @ 3A, 10V | 2V @ 1mA | 5.4A Tc | 6.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS5835NLR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-ntms5835nlr2g-datasheets-3704.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | Unknown | 8 | OBSOLETE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 8 | Single | 1.5W | 1 | FET General Purpose Power | 15 ns | 45ns | 9 ns | 22 ns | 9.2A | 20V | SILICON | 1.85V | 1.5W Ta | 40V | N-Channel | 2115pF @ 20V | 1.85 V | 10m Ω @ 10A, 10V | 3V @ 250μA | 9.2A Ta | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK662R7-55C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk662r755c118-datasheets-3708.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 2.7MOhm | 3 | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 61 ns | 101ns | 186 ns | 450 ns | 120A | 16V | 55V | SILICON | DRAIN | SWITCHING | 306W Tc | 907A | 724 mJ | 55V | N-Channel | 15300pF @ 25V | 2.7m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 258nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK662R4-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | /files/nexperiausainc-buk662r440c118-datasheets-3726.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 263W | 1 | R-PSSO-G2 | 33.5 ns | 101ns | 186 ns | 369 ns | 120A | 16V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | N-Channel | 11334pF @ 25V | 2.3m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 199nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMS4917NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-ntms4917nr2g-datasheets-3731.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 23 hours ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.28W | 1 | 6.3ns | 12 ns | 7.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 880mW Ta | 30V | N-Channel | 1054pF @ 25V | 11m Ω @ 11A, 10V | 2.5V @ 250μA | 7.1A Ta | 15.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NVD4804NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-ntd4804nt4g-datasheets-4064.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 7.49mm | Lead Free | 2 | 12 Weeks | 4 | LIFETIME (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 2.66W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 35 ns | 19.6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.43W Ta 107W Tc | 230A | 0.0055Ohm | N-Channel | 4490pF @ 12V | 4m Ω @ 30A, 11.5V | 2.5V @ 250μA | 14.5A Ta 124A Tc | 40nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK624R5-30C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk624r530c118-datasheets-3751.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 158W Tc | 90A | 543A | 0.0075Ohm | 271 mJ | N-Channel | 4707pF @ 25V | 4.5m Ω @ 25A, 10V | 2.8V @ 1mA | 90A Tc | 78nC @ 10V | 10V | ±16V |
